Passivated Emitter And Rear Contact Research Articles

Perspectives on life cycle analysis of solar technologies with emphasis on production in India

The COVID-19 pandemic impacted the solar power industry, business, and supply chain for 2019–2021, and installations are falling behind the mission plan. However, Indian PV manufacturers see it as a chance to engage in solar manufacturing to establish a competitive, sustainable, and robust domestic solar industry instead of import-based installations. Given the country's current environmental concerns, green and sustainable local manufacturing is the only viable alternative. By conducting a life cycle assessment (LCA), this study compared the environmental impacts generated by the five most promising photovoltaic technologies-mono-silicon, polysilicon, copper indium gallium selenide (CIGS), cadmium telluride (CdTe), and passivated emitter and rear contact (PERC) solar modules considering manufacturing in India. The study utilizes the ReCiPe method supported by Ecoinvent 3 databases and Simapro V9.0 software, and the functional unit for the data collection is in ‘per square meter’, which is later converted to ‘per kWh’ standard for comparison with the existing studies. The system boundary selected is from cradle to gate. The results demonstrate that cadmium telluride (CdTe) is the best technology for Indian climatic conditions in terms of environmental impact, with a global warming potential of 0.015 kg CO2 eq/kWh, stratospheric ozone depletion of 5.41E-09 kg CFC11 eq/kWh, human carcinogenic and non-carcinogenic toxicity of 6.67E-04 kg 1,4-DCB/kWh and 1.48E-02 kg 1,4-DCB/kWh, respectively and fine particulate matter formation of 3.96E-05 kg PM 2.5 eq/kWh assuming a lifetime of 25 years for these modules. CIGS follows CdTe in almost every environmental impact category.

Laser ablation of thin SiN x layer coated on silicon wafer—evaluation of process performance for PERC solar cell application

In fabricating passivated emitter and rear contact (PERC) solar cells, creating small openings on the SiN x coated silicon substrate to establish metal contacts necessitates using a nanosecond pulsed green laser for ablation. However, the thermal nature of laser ablation poses a challenge. Excessive nitrogen diffusion from SiN x into the silicon substrate can compromise the electrical performance of solar cells. Therefore, this study aims to comprehensively understand how laser parameters impact the electrical properties of such solar cells. PERC solar cell precursors were initially fabricated by ablating the SiN x layer at four laser fluences, each corresponding to different regimes: solid, liquid, vapor, and phase explosion. Subsequently, various optical, chemical, and electrical characterizations were conducted on the solar cell precursors. Complete PERC solar cells were also fabricated to measure quantum efficiency (QE). In the solid regime, SiN x removal is precise, with minimal thermal damage, resulting in a nitrogen concentration of approximately 0.15%. Photoluminescence count and carrier lifetime are notably higher by 21% in the solid regime compared to the explosive regime. The QE measurement at 984 nm quantitatively assesses rear-side recombination losses. Notably, 26% of the area exhibits a 56% QE in the solid state, while this number drops to around 22% in the explosive state. This decline can be attributed to increased thermal damage in the explosive regime, which augments recombination centers and diminishes the solar cell performance. PERC solar cells ablated in the solid regime showcase lower subsurface damage, superior electrical characteristics, and higher performance than those ablated in the explosive regime.

Comparative Study on Energy Yield of Tunnel Oxide Passivated Contact (TOPCon) and Passivated Emitter and Rear Contact (PERC) Solar Cells and Analysis of Optimal Installation Method for Vertical Photovoltaics

AbstractPhotovoltaic (PV) installations have traditionally relied on a conventional south-facing orientation, which maximizes energy production at noon but has lower energy generation in the morning and afternoon. Vertical photovoltaic (VPV) systems have emerged as promising alternatives to address this inconsistency. Vertical photovoltaic systems can enhance energy generation by facing east in the morning and west in the afternoon. We compared the performance of n-tunnel oxide passivated contact (n-TOPCon) and p-passivated emitter and rear contact (p-PERC) cells in vertical photovoltaic systems to determine whether the optimal installation direction of bifacial vertical photovoltaics is east or west. Our findings indicated that n-TOPCon cells exhibited higher energy yields than p-PERC cells, with a difference of approximately 8%, attributed to the superior bifaciality and lower temperature coefficient of power of n-TOPCon. Additionally, the energy yield was higher for n-TOPCon modules when the front faced east, whereas the PERC modules performed better with a west-facing front. This contributes to the knowledge of the factors for energy production in vertical photovoltaic systems and the optimization of installation configurations.

Maskless fabrication of quasi-omnidirectional V-groove solar cells using an alkaline solution-based method

Silicon passivated emitter and rear contact (PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor (FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency (21.78%) than pyramid solar cells (21.62%). Interestingly, external quantum efficiency (EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle (θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.

Improving the minority carrier lifetime of PERC solar cells via bi-layer rear interface passivation strategy

Passivated emitter and rear contact (PERC) based solar cells are dominating the current photovoltaic (PV) market due to their high power conversion efficiency (PCE) and low cost. However, issues like the lower minority carrier lifetime (MCLT) and high density of surface dangling bonds are limiting their further improvement in PCE. To overcome this issue, a bi-layer rear interface passivation strategy is developed with the ultra-thin Al2O3 and SiO2 layers in PERC solar cells. Applying single (Al2O3) and double (SiO2/Al2O3) passivation layers revealed that each process parameter such as plasma conditions, deposition temperature, post-annealing temperature, and the film thickness in the ALD process affect the MCLT values as well as overall device performance. Especially, post-annealing treatment which improves crystallinity, and reduces interfacial defects was found to be most influential for the MCLT value. The single Al2O3 layer applied in PERC solar cells revealed an increase and decrease in MCLT values at a relatively lower (<10 nm) and higher thickness (>15 nm), respectively. Further, integration of SiO2 with the Al2O3 layer showed its more prominent effect than just single Al2O3 and SiO2 passivation layers. An optimal SiO2 thickness combination (4 nm) with an Al2O3 layer (12 nm), demonstrated reduced density of surface dangling bonds and diffusion of Al atoms from Al2O3 layers. As a result, it improved the carrier extraction yield by increasing the negative fixed charge. Finally, SiO2/Al2O3 (4/12 nm) double passivation layer post-annealed at 450 °C for 15 min delivers improved PCE from 19.4% to 19.9% in PERC solar cells.

TOPerc Solar Cell: An Integral Approach of Tunnel Oxide Passivated Contact (TOPCon) and Passivated Emitter and Rear Contact (PERC) Architectures for Achieving Efficiency Beyond 25%

Passivated emitter and rear contact (PERC) on p‐type mono silicon has a roadmap for achieving &gt;24% efficiency. The decrease of the full‐area rear metal contact to partial rear contact (&lt;10%) accounts for the majority of the increase in efficiency of PERC solar cells over Al‐BSF solar cellswhich reached its maximum efficiency around 19.5%. P‐type tunnel oxide passivated contacts (TOPCon) solar cells have achieved further improvement in efficiency ≥25% by completely removing the partial rear metal contact and introducing a thin tunneling oxide layer at the rear. Thus passivating the partial rear and front metal contacts using SiOx/poly‐Si tunnelling layer stacks and an AlOx/SiNx stack on the entire back surface to passivate the remaining areas might lead to further advancements in PERC solar cells. Therefore, by integrating TOPCon and PERC architectures, as originally proposed by Fraunhofer lab, a modified design known as TOPerc solar cell has been studied in depth in this paper. Using 3D Sentaurus TCAD simulation software, a thorough numerical simulation of a p‐TOPerc solar cell has been performed. It is shown that efficiency of 25.2% and 26.0% is obtained for a p‐type wafer of bulk lifetime of 400 μs and 5.0 ms, respectively.

Improvement in the Performance of P-Type Tunnel Oxide Passivated Contact Solar Cell With Selective Tunneling Junctions Underneath the Contacts on Front Side

Industrial silicon solar cells are now moving further from passivated emitter and rear contact (PERC) toward Tunnel Oxide Passivated contact (TOPCon) technology. The efficiency of the PERC solar cell is improved by TOPCon technology, in which the rear side is fully passivated by an oxide/poly-Si tunneling junction. The performance of a TOPCon solar cell may further be improved by the incorporation of selective tunneling junctions underneath the front contacts. Some fabrications have been reported on a similar structure for an n-type Si substrate but they have not achieved the expected results. Also, a detailed study has not been done yet. Using 3-D sentaurus technology computer aided design (TCAD) simulation software, a detailed analysis has been done on the modified structure through the optimization of the tunnel oxides, the interfaces, the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> poly-Si layer, the selective (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> -poly-Si) tunneling junctions underneath the front contacts, etc., which has not been done earlier. It is seen that a thick n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> poly-Si layer causes parasitic absorption of light, whereas a very thin poly-Si layer cannot provide sufficient field for tunneling of carriers. A thicker tunnel oxide produces a high series resistance, whereas a very thin tunnel oxide cannot restrict the minority carriers to reach to the contacts. Therefore, an optimization is required and the optimization is done based on a fabricated bifacial p-TOPCon solar cell reported in the literature with an efficiency of 21.2% and bulk lifetime of 200 μs. After performing all the modifications in the fabricated reference cell and optimizing different parameters, the efficiency is improved by 3.5% in absolute. The efficiency is further improved to 25.4% with the bulk lifetime of 1 ms.

TCAD based numerical exploration of industrially feasible tunnel oxide passivated contact on p-type silicon

Tunnel Oxide Passivated Contact (TOPCon) is considered as an immediate successor of Passivated Emitter and Rear Contact (PERC). Rear side full area hole selective passivating contact with front n+ diffused emitter on p-type silicon (Si) (p-TOPCon) would be an incremental upgrade from PERC. However, limited studies are present on p-type Si and most of them are on TOPCon with rear full area electron selective contact (n-TOPCon). In this work, we explore the potential of p-TOPCon by incorporating industry relevant material and process parameters in Sentaurus TCAD simulations. These include bulk lifetime (τb), wafer resistivity (ρ), polysilicon related rear parameters, front emitter sheet resistance (Rsheet) and its passivation (Sfront), and finger width (Wfinger). Simulation results are benchmarked against PERC and n-TOPCon. p-TOPCon outperforms PERC and has lower sensitivity to wider range of τb, ρ, and Sfront. Simulation suggests that an efficiency of 23.83% can be achieved for industrially feasible τb of 5 ms, ρ of 1 Ω-cm, emitter Rsheet of 132 Ω/sq, and Wfinger of 20μm for p-TOPCon. Replacement of diffused emitter with n-TOPCon would be ideal after accomplishing above anticipated advancements and in such a scenario, efficiency > 24.4% can be achieved on p-type Si.

Impact of acetic acid exposure on metal contact degradation of different crystalline silicon solar cell technologies

Degradation due to acetic acid in photovoltaic (PV) modules has been a commonly observed phenomenon for both damp-heat exposure and outdoor operations. Acetic acid is a degradation byproduct of ethylene-vinyl acetate (EVA), a common module encapsulant. To address this issue, robust metallization pastes and cell technologies are being developed. However, it is important to assess how these technologies perform in an acetic acid environment and withstand degradation before they are implemented in the solar market. In this work, we investigate the impact of acetic acid exposure on four different cell groups: monofacial passivated emitter and rear contact (PERC) cells with advanced telluride-based front contact pastes, bifacial PERC cells with novel aluminum rear contact pastes, bifacial tunnel oxide passivated contacts (TOPCon) cells, and silicon heterojunction (SHJ) cells. These cells were exposed to acetic acid for different time increments. The recombination losses were characterized by Suns- V OC , and multi-variate regression analysis of intensity-dependent photoluminescence (PL) images with Griddler AI. Resistive losses were tracked with the transmission line method (TLM). Samples showing severe performance degradation were selected for further materials characterization to understand the root cause. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were performed to investigate the change in materials properties. Our study shows that the front contacts of the bifacial TOPCon cells and monofacial PERC cells were significantly affected by acetic acid exposure. The SHJ cells were found to be the most stable. • Effect of acetic acid on metallization pastes and cell technologies was investigated. • Front Ag-Al contacts for Bifacial TOPCon cells degrade the most due to acid exposure. • Monofacial PERC cells with Pb-free Te-O paste is the second group that is affected. • Bifacial PERC cells were stable with Al back contacts showing no signs degradation. • SHJ cells were the most stable group in this experiment.

Corrosion testing of solar cells: Wear-out degradation behavior

Corrosion is one of the main end-of-life degradation and failure modes in photovoltaic (PV) modules. However, it is a gradual process and can take many years to become a major risk factor because of the slow accumulation of water and acetic acid (from encapsulant ethylene vinyl acetate (EVA) degradation). In this work, an accelerated aging test for acetic acid corrosion was developed to probe wear-out and end-of-life behavior and facilitate screening of new cell, passivation, metallization, and interconnection technologies. In the tests, the top glass and EVA layers were removed from PV modules to expose the solar cells and interconnects. These “opened” modules were then placed in acid baths under varying conditions, including acid concentration, temperature, and electrical bias. Three cell technologies were tested, including Al-back surface field (BSF), passivated emitter and rear contact (PERC), and silicon heterojunction (SHJ). For all conditions, the presence of acid accelerated module power loss compared to control tests with water baths. Increased temperature accelerated the rate of degradation by several times. Application of electrical bias led to an initial drop in short circuit current, but these modules eventually outperformed the non-biased modules. In all tests, lead oxides were the primary degradation products detected, and found to accumulate mostly along the printed metallization, especially in proximity to the busbar. SHJ cells with a silver paste-based interconnection outperformed Al-BSF and PERC cells with a solder-based interconnection. The accelerated corrosion test methods can be optimized to match corrosion behavior observed in field modules with greater precision and shorter times than standard damp heat tests, and is especially useful to assess the long-term durability of the continuously increasing variety of corrosion sensitive PV materials and components. • Continued use of EVA poses risk for new cell technologies because of acid generation. • Accelerated corrosion test for solar cells is developed, improving upon damp heat. • Rate of power loss dependent on concentration, temperature, bias, and technology. • Cell interconnect solder joint most susceptible to corrosion by acid.

An experimental study on laser ablation of Ultra-thin SiNx layer of PERC solar cell

In this work, a nanosecond green laser (532 nm) is used to generate narrow openings by removing an ultra-thin (85 nm) SiN x layer that is coated on a silicon substrate for application in the fabrication of Passivated Emitter and Rear Contact (PERC) solar cells. An experimental analysis is presented to identify the optimal range of laser parameters for an efficient ablation with minimal damage to the silicon substrate. The ablated samples were characterized using a 3D profilometer to obtain the surface profiles and scanning electron microscope imaging to observe the surface quality. Further, energy-dispersive X-ray line analysis and atom probe tomography were performed to evaluate the nitrogen content on the surface and along the depth, respectively. The experimental results suggest that the SiN x layer starts to ablate only above a threshold laser fluence of 1.4 J/cm2, while the surface bulged out for laser fluence slightly below the ablation threshold. The central part of the ablated region was clean with a negligible nitrogen concentration at the surface, about ∼0.03% at a fluence of 2.4 J/cm2. Nitrogen concentration reduces continuously and almost becomes zero at 80 nm depth, suggesting complete ablation of the SiN x layer for establishing electrical contacts. The ablation width was close to the laser spot diameter only at lower values of the laser fluence. The lowest value of ablation depth was about 180 nm, suggesting that only about 95 nm layer of the silicon is ablated. The study demonstrates that nanosecond laser ablation is a potential technique for ablation of the SiN x layer of PERC solar cells but requires choosing the optimal parameters.

Past, Present, and Future Outlook for Edge Isolation Processes in Highly Efficient Silicon Solar Cell Manufacturing

This work highlights present research and mass production results of wet‐chemical solutions for industrial edge isolation of silicon solar cells, aiming for a reduction of nitric acid consumption and production costs as well as a simultaneous increase in efficiency. All processes are applied to either industrially passivated emitter and rear contact (PERC) or tunnel oxide‐passivated contact (TOPCon) solar cells. Herein, a review of different edge isolation techniques in the history of silicon solar cell processing is presented. Subsequently, novel wet‐chemical approaches are focused on, namely 1) HNO3‐reduced edge isolation (InOxSide Fusion), 2) HNO3‐free edge isolation (InOxSide Blue), and 3) batch cluster solution—a combination of an acidic inline and an alkaline batch tool for emitter edge isolation of PERC and TOPCon solar cells. For each of the approaches, cell results and total cost of ownership estimations are presented. Based on all findings, a comprehensive discussion between inline versus batch‐cluster processing is presented. All investigations are performed on industrial equipment, wafer sizes, and a solar cell efficiency level of above 23%.

Random subwavelength structures on glass to improve photovoltaic module performance

Glass samples have been processed by a single-step self-masking RIE (Reactive Ion Etching) process to obtain random subwavelength structures (SWSs), which mimic anti-reflective and anti-soiling patterns present in nature. The SWSs fabricated on glass provide an excellent broadband omnidirectional anti-reflective (AR) property (¡1% absolute reflectance) in the spectral region (300–1200) nm due to the graded refractive index that these SWS produce in the air–glass interface, reducing the reflectance. Moreover, these SWSs increase the roughness of the glass surface enhancing its wettability and anti-soiling properties. In order to quantify the performance improvement of photovoltaic devices when using these structured glasses as front cover, commercial PERC (Passivated Emitter and Rear Contact) solar cells have been laminated with these structured glasses using the standard configuration (glass/EVA/Solar Cell/EVA/backsheet) and their electrical parameters such as I–V curve, spectral response, and IAM (Incidence Angle Modifier) factor have characterized.

An industrial scale solution to achieving light-induced degradation (LID) free silicon solar systems: &gt;5% performance gain at system level with advanced hydrogenation technology

Light-induced degradation (LID) and light- and elevated-temperature induced degradation (LeTID) effects in p-type monocrystalline silicon (Si) passivated emitter and rear contact (PERC) cell structure have been extensively studied in recent years. Various advanced hydrogenation techniques were previously reported, and aimed to eliminate or at least minimize the effect of LID/LeTID on solar cell performance stability. However, there are limited reports on the long-term performance of solar modules which comprise of these treated solar cells and deployed in typical outdoor conditions. This work aims to provide quantified outdoor performance data for comparing solar modules that are comprised of either hydrogenated or non-hydrogenated reference p-PERC silicon solar cells. A total of 1150 solar modules (>82,000 p-PERC silicon solar cells) were deployed on a commercial building rooftop with identical placement and real-time performance monitoring over an extended period of 12 months under standard outdoor conditions. The results showed that effective advanced hydrogenation is achievable with process time as short as 5 s, although a longer process time of 10–15 s delivered optimal results. The advanced hydrogenation technology in this work can effectively address the LID and LeTID issues on the cell, module, and system levels, with >5% higher power generation capability on hydrogenated solar arrays as compared to the non-hydrogenated reference. Solar cell and module manufacturers strive to produce products with long-term stability, and the successful demonstration of the advanced hydrogenation technology in this work could serve this demand. A future perspective for advanced hydrogenation technologies is also presented.

Impact of ion implantation and annealing parameters on bifacial PERC and PERT solar cell performance

Passivated Emitter and Rear Contact (PERC) and Passivated Emitter Rear Totally Diffused (PERT) solar cell designs are now a market reality. In the production of these cells, ion implantation is another method for creating emitters and back surface field (BSF) regions, since it can facilitate the process flow and precise doping control. Here, Technology Computer Aided Design (TCAD) is utilized to assess the effects of ion implantation fluences, annealing temperature, and duration, on the performance of bifacial PERC solar cells. To ensure realistic simulation results, the solar cell model is developed using experimentally demonstrated bifacial counterparts. The process simulation models are also calibrated to match experimentally obtained doping profiles. Simulation results show that by replacing emitter diffusion with phosphorus ion implantation, both the front/rear efficiencies can be improved by 0.07%. The rear boron implantation is also optimized to provide an effective BSF, improving the front/rear efficiencies by 0.21/0.15%, respectively. Moreover, co-annealing of emitter and BSF regions exhibits a 0.2% increase in efficiency than separately annealed PERT cells. Hence an overall improvement of 0.48/0.42% is achieved in the front/rear efficiencies when compared to the original diffused emitter PERC design. The fabrication process sequence is also suggested for these solar cells.

Germany: Orion – carbon black

Glass samples have been processed by a single-step self-masking RIE (Reactive Ion Etching) process to obtain random subwavelength structures (SWSs), which mimic anti-reflective and anti-soiling patterns present in nature. The SWSs fabricated on glass provide an excellent broadband omnidirectional anti-reflective (AR) property (¡1% absolute reflectance) in the spectral region (300–1200) nm due to the graded refractive index that these SWS produce in the air–glass interface, reducing the reflectance. Moreover, these SWSs increase the roughness of the glass surface enhancing its wettability and anti-soiling properties. In order to quantify the performance improvement of photovoltaic devices when using these structured glasses as front cover, commercial PERC (Passivated Emitter and Rear Contact) solar cells have been laminated with these structured glasses using the standard configuration (glass/EVA/Solar Cell/EVA/backsheet) and their electrical parameters such as I–V curve, spectral response, and IAM (Incidence Angle Modifier) factor have characterized.

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

AbstractDegradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m−2 (at 340 nm) and 45°C through 4.02 MJ·m−2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (&lt;−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

Chemical stoichiometry effect of hafnium oxide (HfOx) for passivation layer of PERC solar cells

Hafnium oxide (HfOx) is being investigated as a new candidate for the passivation layer of silicon solar cells due to its excellent electrical and optical properties, such as high dielectric constant, large band gap, refractive index, high transparency, and thermodynamic stability in contact with Si. In this paper, the HfOx is analyzed for novel material applied to the passivation layer to improve the performance of passivated emitter and rear contact (PERC) solar cells. For optimisation of the passivation layer of the PERC solar cell, chemical stoichiometry and passivation properties such as interface trap density, fixed charge and effective carrier lifetime are studied before and after the annealing process. After annealing in O2, interface trap density (Dit) decreased from 8.15 × 1010 eV−1cm−2 to 2.37 × 1010 eV−1cm−2 and the fixed charge (Qf) changed from positive to negative after annealing due to the reduction of oxygen vacancies. However, the passivation properties did not meet expectations due to blistering after annealing at 500 °C or higher and the highest effective carrier lifetime was 188.56 μs after annealing at 400 °C, which was improved from 49.48 μs before annealing. It was confirmed that improved passivation performance and solar cell efficiency could be achieved through the chemical stoichiometry effect by a simple annealing process.

Double POLO Carrier Selective Contact Based PERC Solar Cell for 25.5% Conversion Efficiency: A Simulation Study

Polycrystalline Silicon on Oxide (POLO) passivating contacts have emerged as a carrier selective contact for high-efficiency Si-based photovoltaic (PV) devices. In this paper, double POLO PERC (Passivated Emitter and Rear Contact) device is designed by employing POLO contacts on both contact sides to reduce the contact recombination losses through Silvaco-TCAD tool. The performance of the double POLO PERC device has been studied by using the PV parameters and current-density (J-V) curve. The impact of tunnel oxide thickness variation (1 nm, 1.25 nm, 1.5 nm) in the tunnel oxide layer is also analyzed. The performance of textured double POLO PERC solar cell is optimized at 1.5 nm thickness (TOX), which reflects optimum conversion efficiency of 25.5%. Reported study of double POLO PERC device may open up a door for further improvement in PERC device performance.

Damp‐heat induced degradation in photovoltaic modules manufactured with passivated emitter and rear contact solar cells

AbstractCorrosion is one of the main PV module failure mechanisms, as it can cause severe electrical performance degradation in PV modules exposed to hot and humid environments. Moisture penetrating a photovoltaic (PV) module may react with the metallic components causing corrosion. In addition, acetic acid which is produced by hydrolysis of ethylene vinyl acetate (EVA), the most common encapsulant, may further degrade metallic components. Corrosion is one of the main PV module failure mechanisms, as it can cause severe electrical performance degradation in PV modules exposed to hot and humid environments. The specific chemical reactions involved in the corrosion mechanisms for the different components are well understood. However, which of these causes the most serious degradation in the field, and therefore, most severe power loss is unknown. Moreover, the severity of corrosion in the absence of acetic acid is not yet well researched. This work distinguished between the front and rear side corrosion mechanisms and identified the different electrical signatures observed due to them. The experiment included damp‐heat (DH) conditioning of single‐cell mini‐modules, containing passivated emitter and rear contact (PERC) solar cells, laminated with a polyethylene terephthalate (PET) based backsheet. Furthermore, half‐encapsulated PERC PV cells were tested, with either the front or the rear side exposed. Electrical and material characterisation were conducted for the investigation of the sample degradation, and the performance decrease, related to the degradation of the rear surface passivation, was examined.