III–V materials owing to have low effective masses, high mobilities and a direct band gap, exhibit suitability for both optoelectronic as well as tunnelling devices. Gallium Antimonide (GaSb), a III–V semiconducting compound, shows narrow band gap and high carrier mobility apposite for high-performance optoelectronics in the mid-IR range.The vertical directional solidification (VDS) is a crystal growth technique employed for the growth of high quality (>6N)bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure.Bulk crystalline GaSb was grown by VDS and then its fractured form is harnessed as source material for synthesis of thin film. GaSb-VDS thin semiconducting film of uniform thickness1.8μm was synthesized at 350°C by electron beam physical vapour deposition method.This thin film is p-type and will be implanted by group VI n-dopant(Telluriumions)impurities to form a junction. For same reason it is characterized for optical, electrical and morphological properties prior to support its claim as a device construction substrate. XRD, EDAX Raman, AFM, four probe and FTIR techniques were employed for the confirmation of crystalline, compositional, morphological, resistivity and optical band gap respectively.XRD of film reveals peaks close to 25°and42° corresponding to [111] and [220] crystal planes are in agreement as reported for crystalline GaSb. Raman spectra also confirm the GaSb crystalline film formation. SEM and EDAX of synthesized film found to be polycrystalline and agree the weight%of35.36and64.64 for GaandSb respectively. Four-probe technique yields the sheet resistance of 5.6Ωpersquare and optical band gap 0.728eV was obtained by FTIR. Optical band gap of the semiconducting film is obtained as 0.728eV and a Sheet resistance of5.6Ωpersquare. Uniform monolayer with low defect density is confirmed by Atomic force microscopy.It establishes formation of a p-type GaSb VDS thin film that is good for n-type implantation and show rectification tendency.