Oxygen Vacancy Defects Research Articles

Laser pretreatment enhances the laser-induced damage threshold of MgAl2O4 transparent ceramics

The demand for transparent ceramics as essential optical components in high-energy laser systems is escalating. Given the continuous surge in laser output power, there is an urgent need to enhance their laser-induced damage threshold (LIDT). This research systematically investigates the influence of variables such as laser energy density, number of scan repetitions, and stepwise scanning on the LIDT of MgAl2O4 transparent ceramics by modulating the process parameters of laser pretreatment. Through this method, oxygen vacancy defects on the material surface were effectively minimized, achieving surface purification of transparent ceramics and reducing residual stress. Under a consistent laser energy density of 8.96 J/cm2, the transparent ceramics were subjected to 1 to 9 scanning passes. The LIDT showed a progressive increase with the number of scans, reaching a maximum value of 15.0 J/cm2 after seven scans, which corresponds to a 34% improvement compared to untreated samples. Additionally, laser pretreatment facilitated the expansion of the material's bandgap and increased transmittance in the 200-300 nm band, further substantiating the intimate relationship between the reduction of oxygen vacancy defects and the improvement of optical properties. The findings indicate that laser pretreatment, as an effective post-processing technique, can substantially augment its resistance to laser damage by optimizing the microstructure and surface characteristics of the material. Moreover, judicious control of laser energy density and number of scan repetitions is crucial for optimally improving LIDT. In conclusion, this study offers what we believe to be a new theoretical foundation and technical support for the performance optimization of transparent ceramics in high-power laser systems, underscoring the significant potential of laser pretreatment as an effective post-processing technology in enhancing material optical properties and durability.

Zr-Doping Strategy of High-Quality Cu2O/β-Ga2O3 Heterojunction for Ultrahigh-Performance Solar-Blind Ultraviolet Photodetection.

β-Ga2O3, as an ultrawide band gap semiconductor, has emerged as the most promising candidate in solar-blind photodetectors. The practical application of β-Ga2O3, however, suffers from intrinsic defects and suboptimal crystal quality within the devices. In this work, high-quality β-Ga2O3 was successfully synthesized by employing the Zr-doping strategy, which has facilitated the development of ultrahigh-performance solar-blind photodetectors based on Cu2O/β-Ga2O3 heterostructures. Structural analyses indicate that the strong Zr-O covalent bond effectively stabilizes the material, thereby eliminating oxygen vacancy defects. The Cu2O/β-Ga2O3 heterostructure photodetector demonstrates an ultrahigh responsivity and detectivity coupled with an external quantum efficiency. Furthermore, the device exhibits a photocurrent-to-dark current ratio of 3 × 105, showcasing its superior capability in detecting low-intensity deep ultraviolet signals, markedly surpassing previous heterostructure ultraviolet photodetectors. These exceptional performances are attributed to the effective elimination of oxygen vacancy defects in β-Ga2O3 and the variation of band alignment at the interface, which facilitate rapid separation of photogenerated electron-hole pairs under reverse bias. This study not only provides an enhanced and easy route to mitigate oxygen vacancy defects in oxide materials but also propels further exploration into the next generation of flexible, high-performance, solar-blind ultraviolet photodetectors.

Impact of N+ Ion Irradiation on the Electrochemical Behavior of ZnO Thin Film Electrode-Electrolyte Interfaces.

Defect engineering serves as a crucial technique for enhancing the performance of advanced next-generation devices. Ion beam irradiation stands out as a highly promising method for introducing defects in a controlled manner. This study investigates the impact of nitrogen ion (N+) irradiation-induced defects on the electrochemical behavior of ZnO thin-film electrode-electrolyte interface. The oxygen vacancy defects were introduced and tuned by varying the fluence of ion irradiation. The increased Urbach energy in the irradiated samples confirms the enhanced disorder. Photoluminescence data show the emergence of new defect states upon irradiation. The behavior of the ZnO thin-film electrode-electrolyte interface was studied using cyclic voltammetry and electrochemical impedance spectroscopy. At a fixed scan rate, the enhanced peak current was observed in cyclic voltammetry in N+ Irradiated electrodes. Furthermore, reduced charge transfer resistance was observed in the case of irradiated electrodes. To unravel the underlying mechanism, we analyze the AC conductivity, which shows varying dependency on the frequency. It shows the existence of multiple ion-ion correlations in irradiated electrodes. Furthermore, the AC conductivity in the entire frequency region is enhanced significantly. Dielectric permittivity spectra suggest low-frequency dipole interactions and increased dielectric losses after irradiation, indicating non-Debye type relaxation processes. Understanding irradiation-induced changes will help engineer thin film electrodes for batteries, supercapacitors, and other electrochemical applications.

Zeolite-induced defect engineering for synthesis of CuBTC-derived novel carbon-zeolite bifunctional support catalyst for multicomponent VOCs catalytic oxidation removal

In this study, a novel carbon-zeolite hybrid supported Cu catalyst (CuC@NaY) was facilely fabricated by zeolite-induced CuBTC self-assembled growth. The CuC@NaY-3 had a homogeneous spongy nanocage structure, coupled with rich active centers and most oxygen vacancy defects, making it have improved catalytic activity, multi-pollutant adaptability, as well as superior robustness and stability for practical applications. Proper volume of acetone enhanced the catalytic oxidation of toluene on CuC@NaY-3. The T90 for toluene and acetone mono-component catalytic oxidation on CuC@NaY-3 were 265.0 and 214.0 °C, respectively. Whereas for toluene/acetone mixture oxidation, due to the generated enol functional group (−o–) of acetone oxidation the T90 of toluene was reduced to 260.5 °C. The CuC@NaY-3 has also exhibited better water resistance and stability in the catalytic oxidation of toluene/acetone mixture. The DFT calculation proved that CuO led to a more pronounced activity in mono-component oxidation, while Cu2O played a facilitating role when the two pollutants co-exist.

Strong Lewis Electron-Pair Bonding in Vanadium Oxide for Ultra-fast and Long-term Stable Zn-ion Storage

Vanadium-based oxides typically show low electrical conductivity, high repulsion for Zn2+, and severe structure collapse problems, resulting in unsatisfied cathode performance for aqueous Zn-ion batteries (AZIBs). Herein, we propose an advanced structural optimization strategy to address the above issues by constructing strong Lewis electron-pair bonding in vanadium oxide through initial doping Ca and a subsequent in-situ electrochemical activation process. We prepared the precursor of Ca-doped and amorphous carbon-encapsulated V2O3 material (Ca0.17V2O3-x@C) and verified a phase transition into a layered V2O5-typed cathode during the activation process. Importantly, we find the initial-doped Ca and generated abundant oxygen vacancy defects are well restored in the phase-transformed crystal lattice. We reveal that band and bond structures of the phase-transformed cathode are optimized, exhibiting an improved electrical conductivity, optimal Zn2+ binding energy, ultra-low Zn-ion transport barrier, and considerably strong bonds of Ca-O and V-O, thereby realizing enhanced reaction kinetics and stability. The Ca0.17V2O3-x@C exhibits surprisingly high-rate performance (233 mAh g–1 at 40 A g–1) and excellent cycling stability (10,000 cycles with 82% retention at 20 A g–1). This work offers a novel and simple band and bond structure engineering strategy for preparing high-performance phase transformation typed vanadium oxide cathodes for AZIBs.

Simplified synthesis of Pt-MnOx supported on three dimensional Co3O4 for catalytic removal of toluene

In this study, a simplified method was developed for synthesizing Pt-(MnOx)/three-dimensional (3D)-Co3O4 catalysts. This approach represents a convenient alternative to the typical procedure of initially synthesizing nanoparticles (NPs) and subsequently depositing them onto supports. The Pt1-(MnOx)1/3D Co3O4 catalyst, with a molar ratio of Pt:Mn=1:1, demonstrated excellent catalytic efficacy at a comparatively low reaction temperature and displayed commendable thermal stability during prolonged operation in the deep oxidation of toluene. The T90 (temperature required for 90% conversion) of Pt1-(MnOx)1/3D Co3O4 was merely 163 °C. Characterization analysis revealed that the catalyst's remarkable catalytic efficiency is attributed to the elevated concentration of oxygen vacancy defects on Pt1-(MnOx)1/3D Co3O4 and its low-temperature reducibility. In situ DRIFTS analysis was conducted to investigate the possible reaction pathway of Pt1-(MnOx)1/3D Co3O4. The results indicated that the rapid dehydrogenation of methyl and the demethylation of toluene facilitate the cleavage of the benzene ring on the Pt1-(MnOx)1/3D Co3O4 catalyst, due to the abundant absorption of oxygen species. This process enhances the catalytic combustion of toluene

Strong Metal-Support Interaction between Pt and TiO2 over High-temperature CO2 Hydrogenation.

The catalytic activities and stability of oxide-supported metal catalysts are significantly affected by metal-support interactions (MSI) between oxidic supports and supported metals. The surface properties of the support, such as its phase and defects, are crucial in MSI, including both the strong metal-support interaction (SMSI) and electronic metal-support interaction (EMSI). In this study, modulation of SMSI was achieved on rutile-supported Pt nanoparticles (NP) over high-temperature CO2 hydrogenation. The encapsulation of Pt NP surfaces with TiO2-x overlayers is precisely controlled by the defects. It is found that oxygen vacancy defects significantly enhance the catalytic stability of Pt/rutile under high-temperature reverse water-gas shift (RWGS) reaction by inhibiting the occurrence of SMSI. Pt/rutile with oxygen vacancies achieves a 301 molCO×gM-1×h-1 space time yield and considerably catalytic stability (decreased by 8%) at 800 °C over 100 h time-on-stream. Density functional theory (DFT) calculations suggest that the adsorption capacity of Pt NP on the rutile overlayer can be reduced by increasing electron density. Experimental results combined with DFT calculations show that electron transfer from Pt NP to rutile is reduced by the oxygen vacancy defects on Pt/R, preserving the metallic nature of Pt species during CO2 hydrogenation, thereby preventing the formation of SMSI.

Strong Metal‐Support Interaction between Pt and TiO2 over High‐temperature CO2 Hydrogenation

The catalytic activities and stability of oxide‐supported metal catalysts are significantly affected by metal‐support interactions (MSI) between oxidic supports and supported metals. The surface properties of the support, such as its phase and defects, are crucial in MSI, including both the strong metal‐support interaction (SMSI) and electronic metal‐support interaction (EMSI). In this study, modulation of SMSI was achieved on rutile‐supported Pt nanoparticles (NP) over high‐temperature CO2 hydrogenation. The encapsulation of Pt NP surfaces with TiO2−x overlayers is precisely controlled by the defects. It is found that oxygen vacancy defects significantly enhance the catalytic stability of Pt/rutile under high‐temperature reverse water‐gas shift (RWGS) reaction by inhibiting the occurrence of SMSI. Pt/rutile with oxygen vacancies achieves a 301 molCO×gM‐1×h‐1 space time yield and considerably catalytic stability (decreased by 8%) at 800 °C over 100 h time‐on‐stream. Density functional theory (DFT) calculations suggest that the adsorption capacity of Pt NP on the rutile overlayer can be reduced by increasing electron density. Experimental results combined with DFT calculations show that electron transfer from Pt NP to rutile is reduced by the oxygen vacancy defects on Pt/R, preserving the metallic nature of Pt species during CO2 hydrogenation, thereby preventing the formation of SMSI.

Visible Light Driven Defect Mediated Photocatalytic Activity of Spray Pyrolyzed Ga and Al Doped ZnO Thin Film Electrodes

AbstractGa and Al doped ZnO thin film electrodes are spray deposited and explored for photocatalytic deterioration of methylene blue dye. X‐ray diffraction unveils both films to have highly textured growth along the (002) plane. The surface morphology is found to have near spherical and distorted rectangular particles for Ga and Al dopants, respectively. Photoluminescence emission study reveals that both films have visible light emissions in the violet, blue, and green regions due to oxygen vacancy defects. The deposited films exhibit a reasonably higher transmittance of 89 and 77 % with mobility of 30.5 and 29.6 cm2/Vs for Ga and Al doped ZnO, respectively. Cyclic test and photo‐corrosion studies performed for selected samples were indicating significant stability. Based on these findings the electrodes are explored for the photocatalytic degradation of methylene blue dye and are found to have significant efficiency upon LED and sunlight irradiation.

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of Bi4O5Br2: First-Principles Calculations

First-principles calculations based on density functional theory are employed to investigate the impact of vacancy defects on the optoelectronic properties of Bi4O5Br2. The results indicate that vacancy defects induce minimal lattice distortion in Bi4O5Br2 without compromising its structural stability. Oxygen or bromine vacancies are more likely to occur than bismuth vacancies. The introduction of a bismuth vacancy leads to n-type semiconductor behavior in the Bi4O5Br2 system, while the creation of an oxygen vacancy reduces the bandgap and enhances the light absorption capacity. Bi4O5Br2 with three coordinated oxygen vacancies exhibits a higher effective electron–hole pair mass ratio, which is advantageous for the efficient separation of electron–hole pairs. Bi4O5Br2 with three coordinated oxygen vacancies exhibits enhanced absorption and reflection coefficients in the visible-light region compared to other systems, indicating that oxygen vacancy defects significantly promote visible-light absorption and electron–hole separation. This research provides new theoretical insights for understanding and optimizing the performance of photocatalysts based on Bi4O5Br2.

Synergistic enhancement in hydrodynamic cavitation combined with peroxymonosulfate fenton-like process for bpa degradation: New insights into the role of cavitation bubbles in regulation reaction pathway

The combination of hydrodynamic cavitation (HC) and Fenton-like oxidation technology can dramatically enhance the pollutant removal capacity, however, the synergistic effect of cavitation and catalysts on reactive oxygen species (ROS) generation remained enigmatic. In this study, we established a combined system based on HC and Ce-MnFe2O4 activated peroxymonosulfate (PMS) for BPA removal, and attentions were paid on the role of cavitation bubbles. The results show that the combination of HC in Ce-MnFe2O4 activated PMS could mediate the degradation of BPA from the non-radical pathway dominated by 1O2 to •O2− dominated radical pathway. Both controlled experiments and theoretical calculations revealed that the cavitation bubbles with different sizes play the dominant role in ROS generation. The microjets produced by the collapse of cavitation bubbles could create a large number of oxygen vacancy defects on Ce-MnFe2O4 surface, which modify the activation barrier of PMS and facilitate the generation of •O2− thermodynamically. The stable existing cavitation bubbles with the size of 100∼400 nm could create considerable gas-liquid interface. The molecular dynamics simulations show that the nano bubbles can concentrate the BPA and increase the probability of contacts between BPA and Ce-MnFe2O4, hence effectively solve the issues of short lifetime of •O2− radicals and limited mass transfer distance to strengthen the reaction. In addition, the PMS/Ce-MnFe2O4/HC system not only achieves the satisfied COD (95 %) and TOC (65 %) removal efficiency but also enabled the BPA-contaminated water with a low energy cost of 0.065 kWh·m−3 and oxidant cost, highlighting the application potential of the HC technology for contaminated water.

Synergistic Tuning of Heterovalent States and Oxygen-Vacancy Defect Engineering in Hydrophilic W-Doped Sb2OS2 for Enhanced Nitrogen Photoreduction to Ammonia.

Nitrogen fixation reaction via photocatalysis offers a green and promising strategy for renewable NH3 synthesis, and catalysts with high-efficiency photocatalytic properties are essential to the process. Herein, we demonstrate a W-doped Sb2OS2 bimetal oxysulfide catalyst (labeled as SbWOS) with abundant oxygen vacancies, heterovalent metal states, and hydrophilic surfaces for nitrogen photoreduction to ammonia. The SbWOS-3 with suitable W-doping exhibited excellent nitrogen fixation activity of 408.08 μmol·g-1·h-1 and an apparent quantum efficiency (AQE) of 1.88% at 420 nm and a solar-to-ammonia (STA) conversion efficiency of 0.082% in pure water under AM1.5G light irradiation. The W-doping not only transforms hydrophobic Sb2OS2 into a hydrophilic catalyst, making it easier for H2O molecules adsorbed on the SbWOS surface and catalyzed into protons, but also endows the SbWOS catalyst with rich oxygen vacancies, acting as the active sites for trapping and activating the N2 molecule, and for trapping and activating H2O to produce the protons for the N2 photocatalytic reduction reaction. The hydrazine drives the SbWOS catalyst with the heterovalent metal states, which acts as the photogenerate electrons quickly hopping between W5+ and W6+ to transfer for the N2 reduction reaction. This study provides a feasible scheme for applying oxygen vacancy defects, heterovalent metal states, and surface hydrophobic-to-hydrophilic wetting engineering in bimetal oxysulfide for N2 photoreduction to ammonia.

The breakthrough of oxide pathway mechanism in stability and scaling relationship for water oxidation

Abstract An in-depth understanding of electrocatalytic mechanisms is essential for advancing electrocatalysts for the oxygen evolution reaction (OER). The emerging oxide pathway mechanism (OPM) streamlines direct O–O radical coupling, circumventing the formation of oxygen vacancy defects characteristic of the lattice oxygen mechanism (LOM) and bypassing additional reaction intermediates (*OOH) inherent to the adsorbate evolution mechanism (AEM). With only *O and *OH as intermediates, OPM-driven electrocatalysts stand out for their ability to disrupt traditional scaling relationships while ensuring stability. This review compiles the latest significant advances in OPM-based electrocatalysis, detailing design principles, synthetic methods, and sophisticated techniques to identify active sites and pathways. We conclude with prospective challenges and opportunities for OPM-driven electrocatalysts, aiming to advance the field into a new era by overcoming traditional constraints.

Strained van der Waals Metallic Magnet for Photomagnetic Modulation and Spin Photodiode Application

AbstractAll‐optical magnetization reversal provides a low‐power approach for investigating spin state manipulation in 2D magnets. However, the ambient observation of photomagnetic coupling presents significant challenges due to the low Curie temperatures exhibited by most 2D magnets. Herein, a mixed‐dimensional heterostructure comprising a surface‐oxidized Fe3GeTe2 nanosheet with enhanced magnetic properties and individual semiconducting ZnO nanorod is proposed to explore proximity photomagnetic modulation and spin‐enhanced photodetection behaviors. The surface curvature of ZnO nanorod induces pronounced strains for Fe3GeTe2 nanosheet, leading to its anomalous Raman polarization and spin ordering at room temperature. Strain‐activated itinerant spin electrons are immobilized on the O‐2p orbitals of adjacent ZnO, thereby facilitating the optical demagnetization process in Fe3GeTe2 without aid of magnetic field. First‐principles calculations together with in situ characterization experiments further confirm that the primary charge transfer channel involves coupling between Fe3+ and oxygen vacancy defects anchored at heterointerfaces. The rapid establishment of magnetization by illumination in ZnO nanorod contributes to spin‐tunneling‐enhanced photocurrent, device response dynamics, polarization detection and ultraviolet imaging capability. These findings offer valuable insights to optimize the optoelectronic properties of conventional semiconductors and advance complex dimensional spin‐optoelectronic devices.

First-principles study of oxygen vacancy defects in β-quartz SiO2/Si interfaces

Abstract Understanding the electronic structures of gate oxides in Si-based devices is significant for improving device performance. We investigate the electronic properties of the oxygen vacancy defects in β-quartz SiO2/Si interface structure using first-principles calculations. The results indicate that the constructed (SiO2)4/(Si)4 structure is an indirect-gap semiconductor, with its band edges contributed by Si side and a large band-edge energy difference ( > 1.780 eV). Our study reveals that the presence of oxygen vacancy defects reduces the band gap, and V O 1 is transformed from indirect into direct band gap. The Si dangling bonds in V O 1 cause charge localization around the O vacancy, while the formation of Si–Si bonds in V O 2 and V O 3 lead to electron delocalization. In the calculation of defect formation energies, we find that V O 1 maintains the lowest formation energy across different states, making it more likely to form and structurally stable. Compared to O-rich environments, the formation energy in O-poor environments is overall reduced by approximately 4.5 eV, indicating that oxygen vacancy defects are more likely to form and be controlled under O-poor conditions. Our study emphasizes the importance of interface structure and defect characteristics in semiconductor research, providing insights for the development of Si-based devices.

Constructing Electron-Rich Ru Clusters on Non-Stoichiometric Copper Hydroxide for Superior Biocatalytic ROS Scavenging to Treat Inflammatory Spinal Cord Injury.

Traumatic spinal cord injury (SCI) represents a complex neuropathological challenge that significantly impacts the well-being of affected individuals. The quest for efficacious antioxidant and anti-inflammatory therapies is both a compelling necessity and a formidable challenge. Here, in this work, the innovative synthesis of electron-rich Ru clusters on non-stoichiometric copper hydroxide that contain oxygen vacancy defects (Ru/def-Cu(OH)2), which can function as a biocatalytic reactive oxygen species (ROS) scavenger for efficiently suppressing the inflammatory cascade reactions and modulating the endogenous microenvironments in SCI, is introduced. The studies reveal that the unique oxygen vacancies promote electron redistribution and amplify electron accumulation at Ru clusters, thus enhancing the catalytic activity of Ru/def-Cu(OH)2 in multielectron reactions involving oxygen-containing intermediates. These advancements endow the Ru/def-Cu(OH)2 with the capacity to mitigate ROS-mediated neuronal death and to foster a reparative microenvironment by dampening inflammatory macrophage responses, meanwhile concurrently stimulating the activity of neural stem cells, anti-inflammatory macrophages, and oligodendrocytes. Consequently, this results in a robust reparative effect on traumatic SCI. It is posited that the synthesized Ru/def-Cu(OH)2 exhibits unprecedented biocatalytic properties, offering a promising strategy to develop ROS-scavenging and anti-inflammatory materials for the management of traumatic SCI and a spectrum of other diseases associated with oxidative stress.

Long-term stability in perovskite solar cells through atomic layer deposition of tin oxide.

Robust contact schemes that boost stability and simplify the production process are needed for perovskite solar cells (PSCs). We codeposited perovskite and hole-selective contact while protecting the perovskite to enable deposition of SnOx/Ag without the use of a fullerene. The SnOx, prepared through atomic layer deposition, serves as a durable inorganic electron transport layer. Tailoring the oxygen vacancy defects in the SnOx layer led to power conversion efficiencies (PCEs) of >25%. Our devices exhibit superior stability over conventional p-i-n PSCs, successfully meeting several benchmark stability tests. They retained >95% PCE after 2000 hours of continuous operation at their maximum power point under simulated AM1.5 illumination at 65°C. Additionally, they boast a certified T97 lifetime exceeding 1000 hours.

Structural defect regulation in corundum-type medium-entropy oxides for enhanced infrared emissivity performance at high temperature

With the increasing demand in industry and hypersonic vehicles, advanced materials with high-performance infrared radiation need to be developed. Herein, two corundum-type medium-entropy oxide ceramics M3 (Al1/3Cr1/3Fe1/3)2O3 and M4 (Al0.25Cr0.25Fe0.25Ga0.25)2O3 were prepared by solid-state reaction method at different temperatures. Their chemical structure and infrared emissivity performance were analyzed through systematic experiments and theoretical analysis. Compared to the M3, M4 prepared at 1773 K possessed more preeminent emissivity performance, exhibiting emissivity values of 0.917, 0.912 and 0.90 in the wavelength of 0.2–0.78 μm, 0.78–2.50 μm and 2.5–14 μm, respectively. Meanwhile, the infrared emissivity of M4 still could exceed 0.85 at 800 °C in the wavelength of 1.5–25 μm, displaying excellent emissivity and stability under high temperature. As a consequence of lower bandgap and defects formation energy, more oxygen vacancy defects were generated in M4, resulting in better infrared emissivity performance. The results demonstrates that M4 as coating has great potential to be applied in energy-related and thermal protection of hypersonic vehicles.

Facile synthesis of Sb2WO6 with gradient oxygen vacancies for high photocatalytic activity

The Sb2WO6 photocatalyst is synthesized by introducing oxygen vacancies through acetylene annealing. The number of oxygen vacancies can be adjusted by varying the annealing duration. Oxygen vacancy defects in Sb2WO6 change the surface chemical properties, enhance the separation of carriers, broaden the absorption of visible light, and activate the catalytic sites, resulting in overall enhancement of the photocatalytic properties. The significance of surface oxygen vacancies and pertinent mechanisms of photocatalytic oxidation are described. Our results reveal a promising method to improve the properties of Sb2WO6-based materials for applications such as the treatment of wastewater.

Influence of Temperature on the Performance of Metal Semiconductor Metal Photodetector Fabricated by Pure and Cationic Doped (Mg2+ and Cu2+) SnO2 Nanoparticles

Research based on various temperatures always provides beneficial awareness in the fabrication of a vital photodetector for significant applications. Increasing temperature and including dopants in photodetector materials will influence the functioning of the photodetector. This study included the influence of temperature on pure and doped SnO2 photodetectors. The crystal structure of stannic oxide has been modified by adding cationic dopants, namely Mg2+ and Cu2+, through co-precipitation techniques. Various characterization techniques were employed to examine the impact of Mg2+ and Cu2+ on the Sn4+ lattice. The electrical properties of the materials were studied at different temperatures using the Hall effect. Pure SnO2, Mg-doped SnO2, and Cu-doped SnO2 nanoparticles were synthesised separately and used as photodetectors using fluorine-doped tin oxide film as a conductive medium. The fabricated photodetectors are optimized by current-voltage characteristics at different temperatures. The effects of defects in crystal structure, oxygen vacancies, carrier concentration, and temperature on the photodetectors were studied. Comparative studies of pure and doped SnO2 photodetectors revealed that temperature and crystal defects play a significant role in photoconduction.