Outer Pixel Layers Research Articles

Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least 1015 neq/cm2 and total ionization doses of at least 50 Mrad.

MALTA: a Monolithic Active Pixel Sensor for tracking in ATLAS

The MALTA team is developing the MALTA chip, a depleted monolithic active pixel sensor (DMAPS) implemented in the TowerJazz 180 nm modified CMOS process for tracking applications in high energy particle physics experiments such as the ATLAS experiment at the LHC . At the INFIERI school in Wuhan, China, I presented results on what was then the latest prototype of the chip, the MiniMALTA. So far measurements have shown promising that suggest that the chip is operational after irradiation doses comparable to those predicted for the outer pixel layers of the proposed inner tracker (ITk) upgrade in ATLAS.

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-Monopix and TJ-Monopix, are presented. LF-Monopix was fabricated in the LFoundry 150 nm CMOS technology, and TJ-Monopix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The paper makes a joint description of the two prototypes, so that their technical differences and challenges can be addressed in direct comparison. First measurement results for LF-Monopix will also be shown, demonstrating for the first time a fully functional fast readout DMAPS prototype implemented in the LFoundry technology.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

Development of planar pixel modules for the ATLAS high luminosity LHC tracker upgrade

The high-luminosity LHC will present significant challenges for tracking systems. ATLAS is preparing to upgrade the entire tracking system, which will include a significantly larger pixel detector. This paper reports on the development of large area planar detectors for the outer pixel layers and the pixel endcaps. Large area sensors have been fabricated and mounted onto 4 FE-I4 readout ASICs, the so-called quad-modules, and their performance evaluated in the laboratory and testbeam. Results from characterisation of sensors prior to assembly, experience with module assembly, including bump-bonding and results from laboratory and testbeam studies are presented.

Signal and charge collection efficiency of n-in-p strip detectors after mixed irradiation to HL-LHC fluences

For the year 2020, an upgrade of the LHC with a factor ten increase in luminosity is planned. The resulting severe radiation doses for the ATLAS tracker demand extremely radiation tolerant detectors. In this study six planar n-in-p strip sensors produced by Hamamatsu Photonics were irradiated in consecutive irradiation steps with pions of 280Mev/c, protons of 25Mev/c and reactor neutrons resulting in a combined fluence of up to 3×1015 1MeV neutron equivalent particles per square centimeter (neq/cm2). This particle composition and fluence corresponds to the qualification limit specified by the ATLAS experiment for the outer pixel layers (assuming an integrated luminosity of 3000fb−1). The 320μm thick devices are investigated using electrons from a 90Sr source. After each irradiation step both charge collection efficiency and noise measurements have been performed using the ALIBAVA readout system, which is based on analogue Beetle ASICs clocked at 40MHz.Measurements of the signal and signal-to-noise ratio of detectors will be given after the sensors were exposed to radiation that both in fluence and composition are corresponding to the expectations for the HL-LHC trackers. Conclusions will be drawn on their operation in the ATLAS inner detector upgrade.

Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×1015neq/cm2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000fb−1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their products meet all the stringent technical requirements. A semiconductor company with very widespread experience of producing science grade CCDs (including deep depletion devices) has adapted their CCD process to fabricate for the first time several wafers of pixel and micro-strip radiation hard sensors, suitable for future high energy physics experiments. The results of the pre-irradiation characterization of devices fabricated with different processing parameters and the measurements of charge collection properties after different hadron irradiation doses up to those anticipated for the (larger area) outer pixel layers at the high-luminosity LHC (HL-LHC) are presented and compared with results from more established particle physics suppliers.