Optical Transmission Measurements Research Articles

Investigating the photocatalytic efficacy of a porous cuprous gallate (CuGa2O4) thick film

Abstract The study aimed to investigate the photocatalytic activity of porous copper gallate (CuGa2O4) thick film with significant wall dimensions. The thick film was meticulously fabricated using tape casting systems, with CuGa2O4 nanoparticles synthesized by Sol–Gel technique and subsequently transformed into gels for the tape casting process. Rietveld refinements were employed to elucidate the crystal structure and lattice parameters of the CuGa2O4 spinel oxide lattice. Moreover, electronic energy configurations and optical transmittance measurements were acquired through UV-visible spectrophotometry. The correlations between the crystal structure, band gap change and formation of electronic energy levels in relation to the photocatalytic performance of CuGa2O4 were explored. The comprehensive examination provides valuable insights into the complex interaction between material properties and photocatalytic behavior, offering a nuanced understanding of the potential applications of porous CuGa2O4 thick films in various technological fields.

Fabrication of SnSe nanostructures visible light photodetectors

Tin selenide (SnSe), a potential low-cost material for technological use, possesses good optical, electrical, and optoelectronic properties. In the present study, thermally evaporated SnSe thin films with vertically grown nanosheet morphology are used to fabricate photoconductor-type photodetectors for visible light detection. The as-deposited films at room temperature (RT) are annealed in a vacuum from 100 to 250 °C and are investigated by EDX, XRD, Raman, FE-SEM, and UV–visible spectroscopy. The morphology and crystallinity of films that had been annealed at 200 °C were better, with (111) plane being the preferred orientation. From the optical transmittance measurements, the absorption coefficient and optical bandgap (Eg) of the deposited films were determined. Here, photo-sensing parameters of the detectors fabricated by depositing Ag contact and tested systematically using a 532 nm laser source of varied power intensities (1–5 mW/cm2) are reported. The photodetector’s performances were evaluated, and the fabricated film annealed at 200 °C had a responsivity of 25 × 10−2 AW−1, a peak EQE of 83 %, and an elevated detectivity of 30 × 108 Jones. The response speed of the fabricated photodetector was reasonably good with τr = 3.8 s and τf = 4.4 s under 5 V bias. The research showed the potential SnSe thin films might be used in the field of detecting visible light.

Fabrication of kesterite Cu2ZnSnS4 thin films using sequentially sputtered multilayers of Cu2SnS3 and Zinc.

Radio-frequency sputtered Cu2ZnSnS4 (CZTS) thin films deposited on glass substrates were characterized. The film deposition was carried out in an argon atmosphere with RF powers of 200 W for zinc and 300 W for the CTS films. After the deposition, the films were annealed at temperatures ranging from 350 °C to 500 °C in a nitrogen and sulfur atmosphere. By using X-ray diffraction, the CZTS films were observed to crystallize in a tetragonal structure with some minor secondary phases in some samples. The absorption coefficient and optical band gap are identified by the ultraviolet-visible-near-infrared optical transmission measurements and the calculated band gap was found to range between 1.4 eV and 1.51 eV. This research comprehensively addresses the effects of layer thickness and annealing temperature on our CTS/Zn films. The annealing process was oberved to result in a significant improvement in electrical conductivity, particularly in films without secondary phases.

Durability improvement of electrochromic WO3 thin films by deposition of an ultra-thin Al2O3 layer via atomic layer deposition

Introduction of an ultra-thin Al2O3 protective layer via atomic layer deposition (ALD) significantly enhances the durability and performance of amorphous tungsten trioxide (a-WO3) thin films for electrochromic devices. The Al2O3 layer, despite being less than 4 nm thick, effectively suppresses the dissolution of WO3 that typically occurs through hydration reactions forming WO3·H2O and tungstic acid (H2WO4). XRD and XPS analyses confirmed the presence of Al2O3 and its minimal impact on the amorphous structure of WO3 thin films. Optical transmittance measurements showed that the Al2O3-protected a-WO3 thin films maintained a higher transmittance modulation (ΔT) compared to bare a-WO3 thin films, with the ALD30 sample retaining 87.9 % of its initial transmittance modulation after 1000 cycles, in contrast to the rapid degradation observed in unprotected films. Microstructural analysis revealed significantly fewer surface cracks and reduced thickness loss in Al2O3-coated films after 100 cycles. Additionally, ICP-MS analysis indicated a much lower W concentration in the electrolyte for Al2O3-protected samples, confirming reduced dissolution.

Optical Characterization of Hydrogel and Silicone Hydrogel Soft Contact Lenses

Contact lenses are biomaterials that have emerged as an alternative to glasses in correcting vision defects. In this study, commercial nesofilcon A (hydrogel-Hy) and delefilcon A (silicone hydrogel-SiHy) daily disposable soft contact lenses were optically examined using UV-visible light spectroscopy. Optical absorption and transmittance measurements of the lenses were taken with a UV-visible spectrophotometer, and their properties of blocking the harmful part of the radiation to the eye and transmitting the harmless part were investigated. From the absorption spectrum, it was seen that the nesofilcon A lens absorbed ultraviolet light better. From the optical absorption coefficient spectra of nesofilcon A and delefilcon A lenses, the absorption edges were obtained as 386 and 325 nm, and the optical band gap values were 3.37 and 3.98 eV, respectively. Additionally, the refractive index profiles of the lenses were plotted. The refractive indices of the lenses at 550 nm wavelength were calculated as 1.55 and 1.77 for nesofilcon A and delefilcon A, respectively. While the delefilcon A lens transmitted visible light well, the nesofilcon A lens blocked UV light better and its refractive index was determined to be closer to the 1.40 the value specified by the manufacturer.

Thin Film TaFe, TaCo, and TaNi as Potential Optical Hydrogen Sensing Materials.

This paper studies the structural and optical properties of tantalum-iron-, tantalum-cobalt-, and tantalum-nickel-sputtered thin films both ex situ and while being exposed to various hydrogen pressures/concentrations, with a focus on optical hydrogen sensing applications. Optical hydrogen sensors require sensing materials that absorb hydrogen when exposed to a hydrogen-containing environment. In turn, the absorption of hydrogen causes a change in the optical properties that can be used to create a sensor. Here, we take tantalum as a starting material and alloy it with Fe, Co, or Ni with the aim to tune the optical hydrogen sensing properties. The rationale is that alloying with a smaller element would compress the unit cell, reduce the amount of hydrogen absorbed, and shift the pressure composition isotherm to higher pressures. X-ray diffraction shows that no lattice compression is realized for the crystalline Ta body-centered cubic phase when Ta is alloyed with Fe, Co, or Ni, but that phase segregation occurs where the crystalline body-centered cubic phase coexists with another phase, as for example an X-ray amorphous one or fine-grained intermetallic compounds. The fraction of this phase increases with increasing alloyant concentration up until the point that no more body-centered cubic phase is observed for 20% alloyant concentration. Neutron reflectometry indicates only a limited reduction of the hydrogen content with alloying. As such, the ability to tune the sensing performance of these materials by alloying with Fe, Co, and/or Ni is relatively small and less effective than substitution with previously studied Pd or Ru, which do allow for a tuning of the size of the unit cell, and consequently tunable hydrogen sensing properties. Despite this, optical transmission measurements show that a reversible, stable, and hysteresis-free optical response to hydrogen is achieved over a wide range of hydrogen pressures/concentrations for Ta-Fe, Ta-Co, or Ta-Ni alloys which would allow them to be used in optical hydrogen sensors.

Controlling Isotropic Reflectivity with Multi‐Oriented Self‐Assembled Hexagonal Arrays in Plasmonic Metasurfaces

AbstractThe fabrication of plasmonic metasurfaces on large surfaces is the next challenge to adapt them to augmented reality systems. The optical properties of a self‐assembled hexagonal plasmonic metasurface, realized with a large‐area compatible approach, are compared at different levels and a correlated‐disorder plasmonic metasurface fabricated by electron‐beam lithography and considered here as the reference: the contribution of plasmonic nanostructure arrangements is studied using the structure factor, physical properties are assessed by optical transmission and reflection measurements, and finally the entire metasurfaces are tested macroscopically in a head‐up display system.

Accurate characterisation of optical diffuse transmission—primary facility and extension to translucent samples

To perform accurate, high-quality and traceable measurement of optical diffuse transmission, which is quantified using the bidirectional transmittance distribution function (BTDF), a new primary facility has been developed at the Physikalisch–Technische Bundesanstalt (PTB), the German metrology institute. This newly developed reference facility will complement the available calibration services and research facilities at PTB for regular reflectance and transmittance and diffuse reflectance. The performance of the new BTDF setup has been investigated in an internal comparison, where consistency of the results was achieved. A thorough uncertainty analysis results in a minimum combined standard (k = 1) uncertainty of about 0.8 %. Research on the accurate characterisation of the BTDF of samples with non-negligible lateral scattering is being carried out on this new setup. Some first results have shown that the measured BTDF value depends on the applied irradiation area size. An empirical model has been found to describe the diffuse transmission of such translucent samples with different scattering parameters.

Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysis

Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(SnxGa1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.

Structural and Optical Characterization of Porous NiV2O6 Films Synthesized by Nebulizer Spray Pyrolysis for Photodetector Applications.

NiV2O6 thin films were grown on glass slides with varying thicknesses using nebulizer spray pyrolysis. The impact of thickness on the thin films' optical, structural, morphological, and electrical characteristics was systematically investigated. X-ray diffraction and micro-Raman analysis confirmed the formation of the triclinic NiV2O6 system. Surface morphology and roughness variations in the as-deposited NiV2O6 films were studied using scanning electron microscopy (SEM) and a profilometer. Optical properties, including optical band gap (Eg), extinction coefficient (k), absorption coefficient (α), and refractive index (n), were determined through optical reflectance and transmittance measurements. The optical energy gap of the as-deposited NiV2O6 films decreased from 2.02 eV to 1.58 eV with increased layer thickness. Furthermore, the photo-detectivity of the films demonstrated an enhancement corresponding to the prolonged spray time. The sensitivity values obtained for visible irradiation were 328, 511, and 433 for samples S1, S2, and S3, respectively. The obtained results can be imputed to the specific porous microstructure.

Investigation of crystalline and band alignment properties of NiO/GaN and Ni0.5Co0.5O/GaN heterojunctions using synchrotron radiation based techniques

Epitaxial layers of NiO and Ni0.5Co0.5O have been deposited on GaN templates using RF magnetron sputtering deposition technique. The epitaxial relationship in out-of-plane and in-plane directions for NiO and Ni0.5Co0.5O layers with respect to GaN is [111]NiO(Ni0.5Co0.5O)∥[0001]GaN and [1̅10]NiO(Ni0.5Co0.5O)∥[1̅21̅0]GaN, respectively. The epi-layers are found to have two triangular domain structures oriented along [111] direction with an in-plane rotation of 60° with respect to each other. Photoelectron spectroscopy (PES) has been used to determine the valence band offset (∆EV) and the band alignment at the heterojunctions (HJs). The ∆EV at NiO/GaN and Ni0.5Co0.5O/GaN HJs are 1.2 ± 0.2 eV and 1.8 ± 0.2 eV, respectively. The conduction band offsets (∆EC) have also been estimated using the determined values of optical band gap (NiO: Eg = ∼ 3.5 eV; Ni0.5Co0.5O: Eg = ∼ 3.3 eV) from optical transmission measurements. The values of ∆EC are found to be 1.5 ± 0.2 eV and 1.9 ± 0.2 eV at NiO/GaN and Ni0.5Co0.5O/GaN HJs, respectively. A type-II band alignment is observed at both the HJs. Higher values of valence band and conduction band offsets are observed at Ni0.5Co0.5O/GaN HJ in comparison to NiO/GaN. These experimentally determined values of band offsets can be used to design wide band gap HJ based devices like photodetectors, where higher values of band off-set at the Ni0.5Co0.5O/GaN HJ can be utilized to confine the carriers.

Printing, Characterizing, and Assessing Transparent 3D Printed Lenses for Optical Imaging

AbstractHigh‐quality lens production has involved subtractive manufacturing methods for centuries. These methods demand specialist equipment and expertise that often render custom high‐grade glass optics inaccessible. A low‐cost, accessible, and reproducible method is developed to manufacture high‐quality three dimensional (3D) printed lenses using consumer‐grade technology. Various planoconvex lenses are produced using a consumer‐grade 3D printer and low‐cost spin coating setup, and printed lenses are compared to commercial glass counterparts. A range of mechanical and optical methods are introduced to determine the surface quality and curvature of 3D printed lenses. Amongst others, high‐resolution interference reflection microscopy methods are used to reconstruct the convex surface of printed lenses and quantify their radius of curvature. The optical throughput and performance of 3D printed lenses are assessed using optical transmissivity measurements and classical beam characterization methods. It is determined that 3D printed lenses have comparable curvature and performance to commercial glass lenses. Finally, the application of 3D printed lenses is demonstrated for brightfield transmission microscopy, resolving sub‐cellular structures over a 2.3 mm field‐of‐view. The high reproducibility and comparable performance of 3D printed lenses present great opportunities for additive manufacturing of bespoke optics for low‐cost rapid prototyping and improved accessibility to high‐quality optics in low‐resource settings.

Fabrication of CZTS Thin Film on Flexible Cu-Foil Substrate by Two-Stage Process

In this research, CZTS thin films grown on flexible Cu-foil with varying sulfurization times. Various characterization methods were employed, including X-ray diffraction (XRD), Raman spectroscopy, energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), optical transmission, and photoluminescence (PL) measurements. Distinctive diffraction peaks characteristic of the kesterite CZTS phase were observed in the XRD analysis, occurring around at 2θ= 28.45° (112), 47° (220/204), and 56° (312/116). Additionally, some secondary phases such as Cu2S and SnS were identified. Raman spectroscopy confirmed the presence of the kesterite phase, with a prominent peak detected at approximately ~336 cm-1, attributed to sulfur atom vibrations within the kesterite structure. Apart from CZTS structure, minor peaks suggesting the presence of the Cu2SnS3 (CTS) phase was detected. EDX analysis revealed compositions with Cu-poor content and Zn-rich content across all samples, with slight variations in sulfurization dwell times affecting the chemical composition. SEM imaging at different magnifications showed alterations in surface morphology and grain structures. Films sulfurized for 30 s and 60 s displayed a granular structure morphology, while extending the dwell time to 120 s resulted in a more compact surface morphology. Optical band gap values ranged between 1.57 and 1.60 eV. PL measurements consistently exhibited strong PL emission around 1.25 eV for all samples, attributed to various transitions within the CZTS structure. The absence of observable band-to-band transitions in the PL measurements indicated the presence of intrinsic defect levels and recombination centers within CZTS. Overall, it was demonstrated in this study that CZTS thin films can be produced on flexible Cu-foils with short sulfurization times, thereby expanding the application areas of CZTS thin-film solar cells.

The fabrication of ultra-wide bandgap GeO2 thin films by DC magnetron sputtering: The impacts of growth temperature and post-annealing process

Ultra-wide bandgap semiconductors (UWBSs), possessing the bandgap greater than 4 eV, have emerged as an advanced platform for optoelectronic device applications. The exploration of novel UWBSs becomes compelling research focus on the solar blind photodetectors (SBPDs). Here, we have deposited ultra-wide bandgap GeO2 films on c-plane sapphire substrates using direct-current (DC) magnetron sputtering method and investigated the effects of the growth and annealing temperatures on surface morphologies, crystal structure, oxygen vacancies, and bandgap energies of GeO2 films. The high quality GeO2 film with the hexagonal phase can be obtained at the growth temperature of 500 °C, which transforms to the mixture of hexagonal and tetragonal phases after annealing at 900 °C. By analyzing the energy loss spectra of O 1s peaks, GeO2 films exhibit the ultra-wide bandgap ranging from 5.78 to 5.90 eV, which is verified by optical transmittance measurements. Moreover, 200 nm SBPDs based on GeO2 films have been fabricated and an obvious improvement in the photoresponse current of the annealed device has been found due to the induced additional electrons by the hole capture of oxygen vacancies. Our findings on the development of ultra-wide bandgap GeO2 films pave a way towards the realization of robust and high-performance SBPDs.

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films

The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.

Nitrogen doped single layer graphene for CZTS-based thin film solar cells

CdS thin films are commonly utilized as a buffer layer in chalcopyrite thin-film solar cells. However, due to the toxic nature of Cadmium (Cd), ongoing efforts are being directed towards exploring alternative options. In this contribution, doped graphene film with remarkable optical and electrical properties has been introduced for the first time as an alternative buffer layer, replacing CdS in CZTS thin-film solar cell application. In this study, nitrogen-doped graphene (N-doped graphene) film was utilized as a substitute buffer layer in the CZTS thin-film solar cell structure, replacing the conventional CdS thin film. For comparative analysis, CZTS/N-doped graphene and CZTS/CdS traditional solar cell structures were fabricated and separately characterized. The CZTS thin films produced were examined through EDX, XRD, SEM, Raman, optical transmission and PL spectroscopy measurements. According to performed analyses, the Cu-poor and Zn-rich kesterite CZTS thin films exhibited a uniform and dense polycrystalline microstructure as observed in surface and cross-sectional SEM images. XRD spectra of the kesterite CZTS thin film displayed predominant peaks corresponding to the (112), (220/204), and (312/116) diffraction planes of the kesterite CZTS phase. Raman spectra showed a dominant peak at ∼336 cm−1 associated with the kesterite CZTS phase. PL emission spectra indicated transitions from the conduction band to defect levels. The CVD-grown doped graphene film exhibited a 3.43 I2D/IG ratio and a 25 cm−1 FWHM of the 2D peak, indicating a single-layer graphene according to Raman analysis. Permanent nitrogen doping with a 2% atomic concentration was confirmed by XPS measurement. The optical transmission measurement of the single layer doped graphene film showed a 95% transmittance value. Nitrogen doping was contributed to decrease the sheet resistance of the graphene film. The Glass/Mo/CZTS/N-doped graphene/i-ZnO/ITO/Al solar cell displayed a VOC of 0.267 V, JSC of 24.6 mA/cm2, FF of 36.46, and η of 2.37%, showing higher FF and Jsc values but lower conversion efficiency compared to the Glass/Mo/CZTS/CdS/i-ZnO/ITO/Al traditional solar cell structure. Hence, the superior working function and transparency properties position the N-doped graphene film as a competitive buffer layer for use in CZTS-based thin-film solar cells.

Deposition of ZnO thin films with different powers using RF magnetron sputtering method: Structural, electrical and optical study

Zinc Oxide thin films at room temperature with good crystallinity quality have been deposited at different Radio Frequency powers. Magnetron sputtering technique has been carried out on glass and oriented Si(100) substrates. The film structure has been characterized by X-ray Diffraction (XRD) and MicroRaman spectroscopy, which possesses a wurtzite structure with (002) preferential orientation selecting suitable conditions. Scanning electron microscope (SEM) and atomic force microscopy (AFM) have been utilized to determine the films surface morphology. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) analysis. The optical behaviors of the deposited films have been characterized by Ultraviolet Visible (UV-Vis) (optical transmittance measurements) as well as by Photoluminance characterization. Electrical properties, Current-Voltage (I-V) and Capacitance-Voltage (C-V) have been studied in details for Zinc Oxide on Silicon film that deposited at different Radio Frequency power. The high transparency, electrical behavior and smooth surface allow to use these Zinc Oxide films in photovoltaic cells and optoelectronics application.

Castor oil-based polyurethane for affordable solar cell encapsulation

In the current work, we have employed an easy, simple, and cost-effective encapsulation process to enhance the lifespan of solar cells when exposed to challenging outdoor conditions. A solar cell was encapsulated using the liquid phase of a polyurethane elastomer prepared from low-cost vegetable castor oil, employing the simple and easy one-shot process with 2,4-toluene diisocyanate (TDI), and without the use of chain extenders. Optical transmission measurements revealed that the transparency of the encapsulant in the visible region reached 92 % with increasing TDI concentration, while the transparency was blocked in the ultraviolet (UV) region. Through the present work, the performance parameters of the solar cell have been enhanced after encapsulation with polyurethane under different compositions and thicknesses. The polyurethane encapsulant did not retain the applied temperature in the range of 30–150 °C, but rather transferred the heat outside the solar cell. We can conclude that the low-cost and easily prepared polyurethane is suitable for solar cell encapsulation in various environments, such as high temperatures (up to 150 °C), low solar intensity (due to high transmission up to 92 %), and high levels of UV radiation (due to UV-blocking capability). Additionally, the current polyurethane encapsulant can be prepared and cast into solar cells with different compositions, ranging from a flexible form (useful for flexible solar cell applications) to a rigid one with a glass-like structure, allowing for the encapsulation of solar cells without the use of a front sheet of glass cover.

Light transmittance measurement method of solid rocket motor plume based on laser modulation spectrum analysis

AbstractThe light transmittance measurement method, which is used to characterize smoke characteristic signal of solid rocket motor plume, can provide important reference for development and design of low smoke characteristic signal solid propellants and motors. The light transmittance measurement method of solid rocket motor plume based on laser modulation spectrum analysis is proposed in this paper. By using a 405 nm laser as the light source and a narrow‐band filter detection method, the influence of plume radiation on the measurement of light transmittance of solid rocket motor plume smoke can be minimized. Additionally, combined with the laser modulation spectrum analysis technology, the signal amplitude is selected by the laser modulation frequency to improve the signal‐to‐noise ratio of the signal. Compared with the laser constant current measuring mode, laser high‐frequency modulation measuring mode with spectrum analysis effectively improves the optical transmittance measurement accuracy. Based on this, a solid rocket motor plume smoke transmittance test system is developed to measure the plume smoke of standard test motors with different propellants and combustion chamber pressures. The results demonstrate that the system can effectively measure the light transmittance of the plume smoke. The light transmittance of solid rocket motor plume can be increased by reducing the aluminum content of solid propellant or increasing the pressure of the combustion chamber. Thus, this research provides an effective measuring tool for evaluating smoke concentration of solid rocket motor plume, which is beneficial to develop low smoke characteristic signal solid propellants and motors.

Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

This paper describes a methodology for studying the energy spectrum and characteristics of Silicon Carbide (SiC) semiconductor materials, utilizing various harmonics for two-photon absorption (TPA). The approach involves developing theoretical models to simulate the energy levels and transitions of SiC, based on the TPA process. By analyzing the resulting spectra obtained by varying the harmonic order, the energy spectrum, and properties of SiC are explored. In this work also includes a comparison of the energy spectrum and properties of SiC for single and two-photon absorption, providing insights into the distinctive features of SiC under these conditions. In particularly absorption co-efficient of the material was calculated from optical transmittance and reflectance measurements at room temperature (300 K) in the wavelength range of 200 -900 nm. In addition, Gaussian functions centered at different energies were modeled using TPA in SiC materials and their contribution to the Harmonic Generation (HG) signal was calculated.