Optical Switching Research Articles

Thermally tunable add-drop filter based on valley photonic crystals for optical communications

Abstract Valley photonic crystals (VPCs) provide an intriguing approach to suppress backscattering losses and enable robust transport of light against sharp bends, which could be utilized to realize low-loss and small-footprint devices for on-chip optical communications. However, there are few studies on how to achieve power-efficient tunable devices based on VPCs, which are essential for implementing basic functions such as optical switching and routing. Here, we propose and experimentally demonstrate a thermally tunable add-drop filter (ADF) based on VPCs operating at telecommunication wavelengths. By leveraging the topological protection of the edge state and the distinct property of negligible scattering at sharp bends, a small footprint of 17.4 × 28.2 μm2 and a low insertion loss of 2.7 dB can be achieved for the proposed device. A diamond-shaped microloop resonator is designed to confine the light and enhance its interaction with the thermal field generated by the microheater, leading to a relatively low power of 23.97 mW needed for switching the output signal from one port to the other. Based on the thermally tunable ADF under the protection of band topology, robust data transmission is implemented with an ultrahigh data rate of 132 Gb/s. Our work shows great potential for developing high-performance topological photonic devices with the thermally tunable silicon-based VPCs, which offers unprecedented opportunities for realizing topologically protected and reconfigurable high-speed datalinks on a chip.

High Q transparency, strong third harmonic generation, and giant nonlinear chirality driven by toroidal dipole-quasi-BIC

Electromagnetically induced transparency (EIT), nonlinearity, and optical chirality hold significant applications in many areas such as optical switches, slow-light devices, chiral harmonic conversion, and optical storage. In this work, we theoretically propose an asymmetric all-dielectric metasurface supporting toroidal dipole-quasi-bound states in the continuum (TD-q-BICs). High quality (Q) EIT, strong third harmonic generation (THG), and giant nonlinear chirality are achieved via the extremely enhanced electric field energy localized in the Si plate by the TD-q-BIC. A huge transition from high Q EIT with transmission of ∼0.99 to strong chirality with circular dichroism (CD) of ∼0.9 is realized by tuning the angle and polarization state of incident light. Strong THG with efficiency of 4.5 × 10−3 under linear polarization light is due to the highly localized electric field supported by the TD-q-BIC and perfect nonlinear CD chirality with theoretically value of ∼1 originates from the large discrepancy in electric field distributions under different circularly polarized light. Our work provides an innovative paradigm to construct TD-q-BICs-governed EIT analogs, THG, and nonlinear chirality for the development of multifunction nanophotonic meta-devices.

Tunable Fano resonances at 2 μm waveband based on a single microring resonator

Abstract Development of silicon photonic devices for the 2 μm waveband is urgent since the 2 μm waveband has been considered as a potential communication window for next-generation optical communications. Asymmetric Fano resonances are very promising in the development of devices such as optical switches, sensors, and modulators for the 2 μm waveband. In this paper, a Fano resonance at the 2 μm waveband is theoretically realized by using a silicon-based microring resonator and the thermo-optic effect is employed to tune it. Utilizing this single microring resonator structure instead of the present coupled microring resonator structures, we achieve the Fano resonance with an extinction ratio of 30.5 dB and a slope ratio of 69.3 dB nm−1 at the 2 μm waveband. The metal heater and graphene heater are designed and optimized to achieve the Fano tuning. The thermal-optical tuning efficiencies are 0.46 nm mW−1, 0.61 nm mW−1 and 1 nm mW−1 for the metal heater, the metal heater with air adiabatic slots, and the graphene heater, respectively. This work provides an effective scheme for the formation and tuning of the Fano resonance at the 2 μm waveband, which is conducive to the development of devices and optical communication systems at the 2 μm waveband.

Tunable photo-response in the visible to NIR spectrum range of Germanium-based junctionless nanowire transistor.

In this paper, the phototransistor behavior is investigated in the germanium-on-insulator (GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High responsivity and photosensitivity are attributed in the fully depleted regime within the visible and near-infrared bands. The impact of light is also investigated in detail on the electronic and transfer characteristics such as energy bandgap, carrier distribution, electrostatic potential, electric field, and generation and recombination rates. Further, the channel doping and thickness are tuned to optimize the optical responsivity. The significant tunability of responsivity is observed with increasing channel thickness. The device exhibits fast optical switching performance, which is further enhanced at higher input light power. Overall, at the nanoscale dimension, our proposed phototransistor demonstrates better detectivity with a significantly smaller illumination area. Thus, the GeOI-based JL-NW phototransistors can be used for imaging (visible wavelength range) and bioimaging (near-infrared wavelength range) applications in advanced technology nodes.

Theoretical and Numerical Modeling of Optical Switching of Epitaxial Nanostructures Based on Iron-Garnet Films

The paper presents a theoretical analysis of magnetization switching in a gadolinium ferrite garnet film due to the demagnetizing effect of a femtosecond laser pulse. Using the Lagrange formalism for a two-sublattice ferrimagnet, the effective Lagrangian, thermodynamic potential, and Rayleigh dissipative function are obtained. The phase diagram of the ferrite film is analyzed, and the main states of the system are identified. Magnetization switching diagrams and trajectories of the order parameter dynamics of the magnet are constructed. The ranges of magnetic fields, temperatures, and demagnetization values for the most efficient magnetization switching are analyzed.

Scalable SOA-based Banyan Optical Space Switch on InP membrane on Silicon (IMOS)

Scalable SOA-based Banyan Optical Space Switch on InP membrane on Silicon (IMOS)

Reversible multimode modulations in photochromic transparent Eu3+doped K0.5Na0.5NbO3 based ceramics

Rare-earth doped transparent photochromic materials have attracted extensive attention in applications of optical information storage and optical switching, in which the high transparency and large fluorescence modulation ratio are required. In this work, 0.94 (K0.5Na0.5)NbO3-0.06 (Sr0.5Ba0.5) (Zn1/3Bi2/3)O3: x wt% Eu2O3 ceramics (KNN-SBZB: xEu) with x=0.1, 0.2, 0.3, 0.4 were prepared by traditional high temperature solid state sintering reaction method. High transmittance (T) was achieved due to the small grain size (less than 110 nm) and the highly symmetrical phase structure. High optical transmittance of 69.27 % at 780 nm and 78.24 % at 1100 nm were obtained in the KNN-SBZB: 0.3Eu ceramic, while large luminescence intensity modulation ratio (∆RL) ∼94.9 %, transmittance (∆RT) ∼5.76 % and diffuse reflectivity (∆ABS) ∼12.59 % were achieved in KNN-SBZB: 0.2Eu ceramic (T ∼62.92 % at 780 nm). Additionally, both the transmittance modulation and luminescence intensity modulation of KNN-SBZB: xEu ceramics show good stability after 10 cycles.

Optical and sign-flipping nonlinear optical properties of NiO/PMMA/PANI nanocomposite films

In this study, we introduce an efficient nanocomposite system to enhance optical properties of Nickel oxide (NiO) integrated with two polymers matrix. NiO nanoparticles is prepared using chemical co-precipitation method and its nanocomposite films (NCFs) were prepared with poly methyl methacrylate (PMMA) and polyaniline (PANI) using drop-casting method on glass substrate and was optimized by changing the concentration of NiO. The prepared NCFs were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), ultraviolet (UV)-visible absorption spectroscopy, photoluminescence (PL) spectroscopy and X-ray photoelectron (XPS) spectroscopy. The open-aperture z-scan method is employed for nonlinear optical investigations, utilizing a nanosecond pulsed laser with a wavelength of 532 nm for excitation. The findings indicate that the NCFs exhibit sign-flipping nonlinear behavior, indicating a transition from saturable absorption to reverse saturable absorption. This suggests that our NCFs exhibit optical limiting properties and potential for applications in photonic devices, such as optical switches and laser protection systems.

Silicon photonics foundry fabricated, slow-light enhanced, low power thermal phase shifter

In this research, we developed a low-power silicon photonics foundry-fabricated slow-light thermal phase shifter (SLTPS) where the slow-light (SL) effect is achieved using an integrated Bragg grating (BG) waveguide. Heating the grating induces a red shift in the transmission spectrum, leading to an increased group index ng during operation, which facilitates a further reduction in the voltage needed for a π phase shift, i.e., Vπ. Additionally, we investigated a compact Mach–Zehnder Interferometer (MZI) that incorporates the SLTPS in both arms with a phase shifter length of 50 μm. A detailed theoretical analysis was conducted to address the non-idealities of the SL-MZI due to uneven optical power splitting and unbalanced loss in the two MZI arms. Vπ and power consumption for a π phase shift (Pπ) of the SL-MZI were quantified for operation in the slow-light regime, demonstrating a Vπ of 1.1 V and a Pπ of 3.63 mW at an operational wavelength near the photonic band edge. The figure of merit Pπ×τ is commonly used to assess the performance of thermal optical switches. The SL-MZI in this work has achieved a low Pπ×τ of 5.1 mW μs with an insertion loss of 4.4 dB, indicating a trade-off with the Vπ reduction.

Optical circuit switched three-stage twisted-folded Clos-network design model guaranteeing admissible blocking probability

Some data center networks have already started to use optical circuit switching (OCS) with potential performance benefits, including high capacity, low latency, and energy efficiency. This paper addresses a switching network design to maximize the network radix, i.e., the number of terminals connected to the network under the condition that a specified number of identical switches with the size N×N and the maximum admissible blocking probability are given. Previous work presented a two-stage twisted and folded Clos network (TF-Clos) with a blocking probability guarantee for OCS, which has a larger network radix than TF-Clos with a strict-sense non-blocking condition. Expanding the number of stages allows for enhancing the network radix. This paper proposes a model designing an OCS three-stage TF-Clos structure with a blocking probability guarantee to increase the network radix compared to the two-stage TF-Clos. We formulate the problem of obtaining the network configuration that maximizes the network radix as an optimization problem. We conduct an algorithm based on an exhaustive search to obtain a feasible solution satisfying the constraints of the optimization problem. This algorithm identifies the structure with the largest network radix in non-increasing order to avoid unnecessary searches. Numerical results show that the proposed model achieves a larger network radix than the two-stage model.

Localized surface plasmon resonance induced nonlinear absorption and optical limiting activity of gold decorated graphene/MoS2 hybrid

The synergistic supremacy of a hybrid nanocomposite made of reduced graphene oxide (rGO), molybdenum disulfide (MoS2) and gold nanoparticles (Au) for Q-switching and optical limiting applications is investigated. Hydrothermally synthesized Au-rGO-MoS2 hybrid with varying concentrations of Au (2.5, 5, 7.5 and 10 wt%) was subjected to interact with Q-switched Nd:YAG nanosecond green laser pulses. The intensity dependent nonlinear absorption studies revealed a switch over in the nonlinear behaviour from saturable absorption (SA) to reverse saturable absorption (RSA) behaviour. SA occurs due to ground state bleaching at comparatively lower laser irradiances serving the need for Q-switching and optical communications. The RSA trait at higher laser irradiance is attributed to sequential two-photon absorption which serves as the platform for optical limiting behaviour prompting laser safety and effective photothermal therapy applications. The strong mid-visible and UV absorption promotes the availability of multiple energy bands for energy transitions of excited state absorption (ESA). Enhanced local fields due to localized surface plasmon resonance effect, structural defects, hierarchical morphology, increased absorption cross-section and plasmon induced energy transfer promotes robust ESA process. These tunable nonlinear optical properties make Au-rGO-MoS2 hybrid promising futuristic candidates for applications in nonlinear photonic devices, ultrafast optical switches and all-optical signal processing systems.

Active logic modulator of terahertz metamaterial for future 6G communication system

A tunable G-shaped metamaterial (GSM) for the upcoming 6G communication system is presented. GSM device shows polarization-dependent characteristics with three or five resonances. The GSM unit cell is composed of two identical G-shaped structures on a silicon (Si) substrate. By utilizing micro-electro-mechanical system (MEMS) technology to change the vertical height (h) between the two G-shaped structures and the horizontal distance (g) between them or change the polarization angle (PA) of the incident light, the electromagnetic responses of GSM device can be switched three to five resonances. The tuning range of resonant frequency of the GSM device is up to 15 GHz by changing the g value, and the modulation depth can reach 93 % by changing PA and h values. This MEMS-based GSM device exhibits multi-resonance and polarization-dependent characteristics, offering an efficient and economical way to modulate terahertz (THz) signals. Moreover, the GSM device also exhibits good optical switching performance at PA = 0°, 30°, and 75° under the condition of h = 2 μm. These characteristics can be expressed as logic signals 'ON' and 'OFF' states, enabling their application in the logic operation function of the NAND gate and programmable two-bit binary digital coding metamaterials.

Dual-mode 1 × 2 optical switch with simultaneous modulation based on inverse design devices

Abstract Mode division multiplexing (MDM) technology, based on the parallelism inherent in mode dimensions, provides an advancement in enhancing on-chip optical communication channel capacity. In MDM communication systems, the routing and switching of optical signals are of essential importance. However, conventional multimode optical switches typically follow the demultiplexing-processing-multiplexing technological route, leading to an unavoidable increase in device size. In scenarios where multiple modes need to be routed synchronously, the implementation of simultaneous modulation optical switches offers a more efficient and feasible solution. Here, we propose two 1×2 dual-mode optical switches with simultaneous modulation on a silicon-on-insulator (SOI) platform in the 1525-1565 nm wavelength range, utilizing two optical phase modulation techniques: mode transformation and waveguide widening. Simultaneously, we employ inverse design methodologies based on the adjoint variable method (AVM) and level-set method to create the compact single-connected devices, which are compatible with CMOS fabrication processes. The experimental results show that the insertion losses for both TE0 and TE1 modes are less than 1.6 dB (2.5 dB), with the worst modal crosstalk at most -13.5 dB (-12.7 dB) for the switch based on mode transformation (waveguide widening) strategy at the wavelength of 1550nm. The extinction ratio (ER) of the two proposed optical switches exceeds 25 dB at the same wavelength. Furthermore, the switches exhibit a 10%-90% rise time of 15.2 μs and a 90%-10% fall time of 19.5 μs at 1550 nm, indicating the switching speed can be up to kilohertz (kHz). Our proposed 1×2 optical switches hold potential as a fundamental unit for optical signal switching in high-integration multimode optical communication systems.

Dynamic tunability of NIR absorption in a plasmonic grating through nonlinear kerr-effect of graphene-oxide and photothermal phase transition of GSST

In this paper, we present an in-depth examination of the absorption dynamics of a silver plasmonic grating incorporating Kerr-type nonlinear graphene-oxide (GO) nanoslits and a Ge2Sb2Se4Te1 (GSST) phase-change material, both in linear and nonlinear regimes. Linear absorption approaches unity at the resonant wavelength when GSST is amorphous. Upon exposure to a nanosecond Gaussian pulse laser irradiation with appropriate fluences, the amorphous GSST partially crystallizes through a thermoplasmonic-induced process, resulting in a significant reduction of the linear on-resonance absorption in the form of a step-like curve. Additionally, the weak off-resonance linear absorption of the system can be enhanced owing to the non-uniform phase-transition within the GSST. Transitioning to a nonlinear regime, considering the third-order nonlinearity of GO nanoslits, reveals distinct absorption behaviors. Temporal analysis reveals that at the on-resonance wavelength, the unit absorption decreases with increasing laser intensity, reaching a minimum at the pulse peak due to the Kerr nonlinearity in the GO. Intriguingly, the absorption exhibits a U-shaped curve at lower fluences, while at higher fluences, it stabilizes at a lower value post-pulse peak where the amorphous GSST undergoes a thermally driven partially crystallization phase transformation. In the off-resonance mode, the weak absorption enhances dramatically by increasing the fluence, tracing an imperfect parabolic trajectory that reaches nearly unit at the trailing edge of the pulse, attributed to the Kerr nonlinearity within the GO nanoslits. By further increasing the laser fluence, the photothermal response of the GSST emerges as the dominant factor, diminishing the unity absorption observed at the trailing edge of the pulse. These findings underscore the dynamic responsiveness of the proposed grating to pulsed laser illumination, driven by the nonlinear Kerr effect and GSST reconfigurability, offering promising opportunities for developing active optical switching devices.

Tunable and polarization-dependent electromagnetically induced transparency analogy in graphene-based terahertz metasurfaces

In this paper, we theoretically and numerically demonstrate a tunable and polarization-dependent electromagnetically induced transparency analogy based on graphene terahertz metasurfaces. The unit cell of the metasurface consists of three-layer graphene strips embedded in a silicon grating. The dynamic adjustment of the transparent window can be achieved by changing the coupling distance between the graphene layers and the polarization direction of the incident lights. The operation mechanism behind the phenomenon can be attributed to the near-field interaction and electromagnetic coupling of modes in graphene strips. Furthermore, the full wave electromagnetic simulations obtained by the finite-difference time-domain method agree well with the theoretical fitting results based on the three-harmonic oscillator model. In addition, by changing the Fermi levels, it can not only realize the outstanding slow-light effects with a maximum group index of 3750 but also obtain the four-frequency asynchronous optical switch function in terahertz regions. Therefore, our proposed metamaterial device may have potential applications in image switching, optical switches, slow-light device, optical communication, and optical storage.

Polarization-Insensitive Optical Switches Based on Mode-Insensitive Devices

Polarization-Insensitive Optical Switches Based on Mode-Insensitive Devices

Optical nonlinear properties of a new polyamide from crystal violet terephthalate

In this study, the nonlinear optical properties of a new polymer poly crystal violet terephthalate (PCVT) as a solution and a thin film with different concentrations of 0.2, 0.6, and 1 mM and input power were investigated by using Z-scan technique at 532 nm CW laser beam wavelength. The negative nonlinear refractive index n 2 as well as reverse saturable and saturable absorption β of the solution and film PCVT samples were determined. Figures of merit were also determined. In comparison with the Z-scan results, a self-diffraction pattern setup was used to measure nonlinear refractive index. Results showed a significant laser power dependence of the number of far-field diffraction rings with power and concentration, consistent with the Z-scan data. The PCVT sample exhibited good optical limiting behavior. Hence, PCVT has important nonlinear properties, and its figures of merit can be optimized by adjusting the PCVT concentration and input power. PCVT is a promising candidate for the design of optical photonic switching and optical limiter devices.

An efficient and improved algorithm for generating an equivalent planar architecture of the data vortex switch

The data vortex (DV) switch was originally designed as an all optical interconnection network for high performance computing (HPC) applications. It was highly scalable with low latency and high throughput, compared to traditional switches used for optical packet switching (OPS) and HPC applications. The equivalent planar (chained MIN) model of the DV, proposed in previous literature, is a planar diagrammatic conversion of a 3-D model of the DV network. In this paper, we will focus on exploring a new, efficient and improved generalized algorithm that enables the arrangement of routing pathways to be implemented as an equivalent planar architecture (EPA, chained MIN) of a DV to find all possible routes between each source and target node pair. The original 3-D architecture of any size can be converted to a planar structure more simply by using the new generalized equivalent planar architecture (EPA) algorithm. To verify the proposed EPA algorithm, it was tested with different input traffic loads and network sizes while keeping the active angle ‘A’ constant. Network performance parameters, including injection rate (throughput) and latency (mean hops), obtained from simulation results are also provided to confirm the validity of the proposed EPA algorithm. This new algorithm is versatile, simple and can be applied to networks of various sizes.

(OFC 2024) Optical Switching for data centers and advanced computing systems

(OFC 2024) Optical Switching for data centers and advanced computing systems

Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

Transparent in-line optical power monitoring in Si programmable photonic integrated circuits (PICs) is indispensable for calibrating integrated optical devices such as optical switches and resonators. A Si waveguide (WG) photodetector (PD) based on defect-mediated photodetection is a promising candidate for a transparent in-line optical power monitor, owing to its simplicity and ease of integration with a fully complementary metal-oxide-semiconductor (CMOS)-compatible process. Here, we propose a simple optical power monitoring scheme for a 2 × 2 Mach-Zehnder interferometer (MZI) optical switch based on InGaAsP/Si hybrid MOS optical phase shifters. In the proposed scheme, a low-doped p-type Si WG PD with a response time of microseconds is utilized as a transparent in-line optical power monitor, and the ground terminal of the MOS optical phase shifter is shared with that of the Si WG PD to enable the simple monitoring of the output optical power of the MZI. Based on this scheme, we experimentally demonstrate that the output optical power of a 2 × 2 MZI can be simply monitored by applying a bias voltage to the Si slabs formed at the output WGs of the MZI without excess optical insertion loss.