Optical-pump Terahertz-probe Spectroscopy Research Articles

Unraveling the cation dependent carrier cooling and transient mobility in lead-free A3Sb2I9 perovskites.

Lead halide perovskites (LHPs) have gained prominence for their exceptional photophysical properties, holding promise for applications in high-end optoelectronic devices. However, the presence of lead is one of the major obstacles to the commercialization of LHPs in the field of photovoltaics. To address this, researchers have explored environment friendly lead-free perovskite solar cells by investigating non-toxic perovskite materials. This study explores the enhancement of photophysical properties through chemical engineering, specifically cation exchange, focusing on the crucial photophysical process of hot carrier cooling. Employing femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy, we have probed the carrier relaxation dynamics in A3Sb2I9 with cesium and rubidium cations. This study unravels that the carrier relaxation is found to be slower in Rb3Sb2I9; along with this, the transient mobility decay is found to be retarded. Overall, this study suggests that an antimony-based Rb3Sb2I9 perovskite could be a substantial lead-free perovskite in photovoltaics. These findings provide valuable insights into cation engineering strategies, aiming to improve the overall performance of lead-free-based photovoltaic devices.

Electron Transfer Dynamics at Dye-Sensitized SnO2/TiO2 Core/Shell Electrodes in Aqueous/Nonaqueous Electrolyte Mixtures.

The dynamics of photoinduced electron transfer were measured at dye-sensitized photoanodes in aqueous (acetate buffer), nonaqueous (acetonitrile), and mixed solvent electrolytes by nanosecond transient absorption spectroscopy (TAS) and ultrafast optical-pump terahertz-probe spectroscopy (OPTP). Higher injection efficiencies were found in mixed solvent electrolytes for dye-sensitized SnO2/TiO2 core/shell electrodes, whereas the injection efficiency of dye-sensitized TiO2 electrodes decreased with the increasing acetonitrile concentration. The trend in injection efficiency for the TiO2 electrodes was consistent with the solvent-dependent trend in the semiconductor flat band potential. Photoinduced electron injection in core/shell electrodes has been understood as a two-step process involving ultrafast electron trapping in the TiO2 shell followed by slower electron transfer to the SnO2 core. The driving force for shell-to-core electron transfer increases as the flat band potential of TiO2 shifts negatively with increasing concentrations of acetonitrile. In acetonitrile-rich electrolytes, electron injection is suppressed due to the very negative flat band potential of the TiO2 shell. Interestingly, a net negative photoconductivity in the SnO2 core is observed in mixed solvent electrolytes by OPTP. We hypothesize that an electric field is formed across the TiO2 shell from the oxidized dye molecules after injection. Conduction band electrons in SnO2 are trapped at the core/shell interface by the electric field, resulting in a negative photoconductivity transient. The overall electron injection efficiency of the dye-sensitized SnO2/TiO2 core/shell photoanodes is optimized in mixed solvents. The ultrafast transient conductivity data illustrate the crucial role of the electrolyte in regulating the driving forces for electron injection and charge separation at dye-sensitized semiconductor interfaces.

Ultrafast photocarrier dynamics in InAs/GaAs self-assembled quantum dots investigated via optical pump-terahertz probe spectroscopy

Optical pump-terahertz probe (OPTP) spectroscopy was performed to measure the lifetime of photogenerated carriers in the barrier and the wetting layer (WL) regions of an indium arsenide on gallium arsenide (InAs/GaAs) single-layer self-assembled quantum dot (QD) sample. A modified rate equation model of carrier dynamics was proposed where possible state-filling in both QD and WL is considered. Drude model fitting was also performed to extract the time-dependent plasma frequency and phenomenological scattering time from the terahertz transmission spectra. The results of the OPTP experiment show two prominent recombination processes that occur at different timescales after photoexcitation. These two processes were attributed to carrier recombination in the GaAs barrier and the quantum well-like states of the WL based on the fitted lifetimes. Calculations using the coupled differential rate equations were also able to replicate the experimental trend at low fluence. The lack of agreement between experimental data and numerical calculations at high optical fluence was mainly attributed to the possible saturation of the GaAs density of states. Lastly, the results of the parameter fitting for the plasma frequency and scattering time indicate a transition from the barrier to the WL recombination as the dominant carrier recombination mechanism within the time scale of the OPTP scan. This further lends credence to the proposed model for carrier dynamics in SAQD systems under state-filling conditions.

Compositional Transformation and Impurity‐Mediated Optical Transitions in Co‐Evaporated Cu2AgBiI6 Thin Films for Photovoltaic Applications

AbstractQuaternary copper‐silver‐bismuth‐iodide compounds represent a promising new class of wide‐bandgap (2 eV) semiconductors for photovoltaic and photodetector applications. In this study, vapor phase co‐evaporation is utilized to fabricate Cu2AgBiI6 thin films and photovoltaic devices. The findings show that the properties of vapor‐deposited films are highly dependent upon processing temperature, exhibiting increased pinhole density and transforming into a mixture of quaternary, binary, and metallic phases depending on the post‐deposition annealing temperature. This change in phase is accompanied by an enhancement in photoluminescence (PL) intensity and charge‐carrier lifetime, along with the emergence of an additional absorption peak at high energy (≈3 eV). Generally, increased PL is a desirable property for a solar absorber material, but this change in PL is ascribed to the formation of CuI impurity domains, whose defect‐mediated optical transition dominates the emission properties of the thin film. Via optical pump terahertz probe spectroscopy, it is revealed that CuI impurities hinder charge‐carrier transport in Cu2AgBiI6 thin films. It is also revealed that the predominant performance limitation in Cu2AgBiI6 materials is the short electron‐diffusion length. Overall, the findings pave the way for potential solutions to critical issues in copper‐silver‐bismuth‐iodide materials and indicate strategies to develop environmentally compatible wide‐bandgap semiconductors.

Orientation of Thiocyanate Ions Tuning the Electron-Phonon Interactions in Pseudohalide Perovskites.

Although the importance of electron-phonon interactions on the optoelectronic properties of perovskites has been well documented, the structural origin of electron-phonon interactions remains largely unexplored. In this study, using pseudohalide perovskites Cs2Pb(SCN)2I2(1-x)Br2x as a model, we have revealed how the orientation of SCN- anions tunes the electron-phonon interactions and the effective charge-carrier mobility by utilizing femtosecond sum frequency generation vibrational spectroscopy, supplemented by photoluminescence spectroscopy and femtosecond optical-pump terahertz-probe spectroscopy. The coupling between neighboring SCN- anions decreases as the Br content (x) increases but does not have a significant effect on the electron-phonon interactions. In contrast, the orientation angle of SCN- anions has a strong correlation with the electron-phonon interaction and effective charge-carrier mobility, that is, a more parallel orientation of SCN- anions leads to a higher electron-phonon interaction and lower effective charge-carrier mobility. This finding provides a molecule-level understanding of the inorganic lattice structure in tuning electron-phonon interactions and may offer valuable guidance for optimizing the optoelectronic properties of perovskites.

Formation of multiple quantum wells m 2D/3D perovskite heterostructures invalidates phonon bottleneck effect

The importance of the phonon bottleneck effect on the optoelectronic properties of organic-inorganic hybrid perovskites (OIHPs) has been well documented. While randomly distributed multiple quantum wells (MQWs) are frequently generated in 2D/3D perovskite heterostructures, the influence of MQWs formation in 2D/3D perovskite heterostructures on the phonon bottleneck effect is poorly understood. In this study, we construct 2D/3D perovskite heterostructures using 2D OIHP (NH3(CH2)8NH3PbI4, OdAPbI4) to passivate 3D OIHP (FAPbI3) and investigate their excitons and carrier dynamics by employing photoluminescence (PL) spectroscopy and femtosecond optical-pump terahertz-probe spectroscopy (fsOPTPS). We observe the formation of MQWs and establish a structure-dynamics-property relationship among the exciton formation time ( TEF), the hot carrier cooling rate (kcool) and the effective charge-carrier mobility(ϕμ). The formation of MQWs could significantly invalidate the phonon bottleneck effect and modulate the optoelectronic properties of 2D/3D perovskite heterostructures. This work provides valuable information on the importance of band alignment and the phonon bottleneck effect in the strategy of 2D/3D perovskite heterostructures.

Photocarrier dynamics in thick Si film studied by optical pump-terahertz probe spectroscopy

Optical pump-terahertz probe spectroscopy (OPTP) was employed to investigate the photocarrier dynamics and the optical characteristics of the semiconductor Si. A bulk Si with a relatively high resistivity of ∼1 kΩcm was polished to a thickness of about 10 ± 3 μm. This thickness is approximately equivalent to the penetration depth of the pump beam in OPTP. We investigated the photocarrier dynamics with the condition that the influence of the inhomogeneous density distribution of the photocarrier is suppressed by using Si with thickness approximately equals to the penetration depth of the pump beam in OPTP. Our results showed a difference in the transmitted terahertz (THz) field amplitude as well as in the peak delay time of the bulk Si and the polished Si which indicates a difference in the photocarrier dynamics, under various applied fluences, between the two types of Si. The observed propagation characteristics of the THz pulse and the obtained optical constants from Fourier analysis illustrate that the thick Si film behaves as a homogeneous material with carrier density generated by photoexcitation.

N = 8 Armchair Graphene Nanoribbons: Solution Synthesis and High Charge Carrier Mobility.

Structurally defined graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic devices. Low bandgap (< 1 eV) GNRs are particularly important when considering the Schottky barrier in device performance. Here, we demonstrate the first solution synthesis of 8-AGNRs through a carefully designed arylated polynaphthalene precursor. The efficiency of the oxidative cyclodehydrogenation of the tailor-made polymer precursor into 8-AGNRs was validated by FT-IR, Raman, and UV-vis-near-infrared (NIR) absorption spectroscopy, and further supported by the synthesis of naphtho[1,2,3,4-ghi]perylene derivatives (1 and 2) as subunits of 8-AGNR, with a width of 0.86 nm as suggested by the X-ray single crystal analysis. Low-temperature scanning tunneling microscopy (STM) and solid-state NMR analyses provided further structural support for 8-AGNR. The resulting 8-AGNR exhibited a remarkable NIR absorption extending up to ∼2400 nm, corresponding to an optical bandgap as low as ∼0.52 eV. Moreover, optical-pump TeraHertz-probe spectroscopy revealed charge-carrier mobility in the dc limit of ∼270 cm2 V-1 s-1 for the 8-AGNR.

Oxidation effect on the ultrafast carrier dynamics of GaTe studied by terahertz spectroscopy

Effect of oxygen on the physical properties of GaTe is investigated by optical pump–terahertz probe spectroscopy. Oxygen erosion in GaTe leads to significant reductions in lifetime and transient conductivity. Terahertz emission is also evaluated. Terahertz radiation intensity gradually dies away with increasing air exposing time. Such phenomena are attributed to the trapping of photogenerated carriers by oxygen–introduced defects, which can result in the reduction of the carrier density, acceleration of the photocarrier relaxation, and impediment of the terahertz emission.

Influence of Molecular Separation on Through‐Space Intervalence Transient Charge Transfer in Metal–Organic Frameworks with Cofacially arranged Redox Pairs

AbstractWe demonstrate direct evidence of photoinduced through‐space intervalence charge transfer (IVCT) between two cofacially arranged redox‐active pairs in metal–organic frameworks and their dynamic variation with their molecular separation. Two homologous MOFs [Co2(NDC)2(DPTTZ)2]. DPTTZ. DMF, 1 and [Co2(BDC)2(DPTTZ)2]. DMF, 2 (where NDC=naphthalene dicarboxylate, BDC=benzene dicarboxylate, DPTTZ=N, N′‐di(4‐pyridyl)thiazolo‐[5,4‐d]thiazole, DMF=N, N′‐dimethyl formamide) are considered for this, whose intra‐dimer distance of redox‐active DPTTZ ligands differs ca. 1 Å from one system to another. Spectroelectrochemical study detects the formation of IVCT band at the NIR region between cofacially oriented DPTTZ molecules in both MOFs. Transient spectroscopy shows faster charge separation as well as charge recombination when intra‐dimer distance is lesser (in MOF 2) due to stronger electronic coupling. We quantify the extent of IVCT by charge transfer integral calculation; and also by optical pump terahertz probe spectroscopy, where MOF 2 shows three times higher carrier mobility due to lesser inter‐DPTTZ distance than MOF 1. These findings reveal a more localized aspect of through‐space IVCT between cofacially organized redox‐active pair in a three‐dimensional framework.

Influence of Molecular Separation on Through-Space Intervalence Transient Charge Transfer in Metal-Organic Frameworks with Cofacially arranged Redox Pairs.

We demonstrate direct evidence of photoinduced through-space intervalence charge transfer (IVCT) between two cofacially arranged redox-active pairs in metal-organic frameworks and their dynamic variation with their molecular separation. Two homologous MOFs [Co2 (NDC)2 (DPTTZ)2 ]. DPTTZ. DMF, 1 and [Co2 (BDC)2 (DPTTZ)2 ]. DMF, 2 (where NDC=naphthalene dicarboxylate, BDC=benzene dicarboxylate, DPTTZ=N, N'-di(4-pyridyl)thiazolo-[5,4-d]thiazole, DMF=N, N'-dimethyl formamide) are considered for this, whose intra-dimer distance of redox-active DPTTZ ligands differs ca. 1 Å from one system to another. Spectroelectrochemical study detects the formation of IVCT band at the NIR region between cofacially oriented DPTTZ molecules in both MOFs. Transient spectroscopy shows faster charge separation as well as charge recombination when intra-dimer distance is lesser (in MOF 2) due to stronger electronic coupling. We quantify the extent of IVCT by charge transfer integral calculation; and also by optical pump terahertz probe spectroscopy, where MOF 2 shows three times higher carrier mobility due to lesser inter-DPTTZ distance than MOF 1. These findings reveal a more localized aspect of through-space IVCT between cofacially organized redox-active pair in a three-dimensional framework.

Spectroscopic Investigation of Structural Perturbations in CsPbCl3 Perovskite Nanocrystals: Temperature- and Excitation-Energy-Dependent Study

Inorganic lead halide perovskites are at the frontier of photovoltaic research due to their groundbreaking performance as an absorbing layer in solar cells. Cesium lead chloride (CsPbCl3), known to be a competent material for its blue emission, undergoes subsequent temperature-dependent phase transitions. The photophysical aspects reliant on temperature as well as the phase exhibited by the material are still unknown. Herein, we have studied the temperature- and excitation-energy-dependent underlying photophysics in CsPbCl3 nanocrystals (NCs) employing ultrafast transient absorption (TA) and terahertz (THz) spectroscopy. The direct dependence of carrier relaxation, carrier temperature, and energy loss on the phase transition has been established. Also, to comprehend the outcome of excitation energy, photoconductivity and mobility were determined with the help of optical pump THz probe spectroscopy, and it is established that as the excitation energy is reduced, mobility decay is found to be slow due to diminishing Auger recombination and augmented penetration depth.

Reversible Electrical Control of Interfacial Charge Flow across van der Waals Interfaces.

Bond-free integration of two-dimensional (2D) materials yields van der Waals (vdW) heterostructures with exotic optical and electronic properties. Manipulating the splitting and recombination of photogenerated electron-hole pairs across the vdW interface is essential for optoelectronic applications. Previous studies have unveiled the critical role of defects in trapping photogenerated charge carriers to modulate the photoconductive gain for photodetection. However, the nature and role of defects in tuning interfacial charge carrier dynamics have remained elusive. Here, we investigate the nonequilibrium charge dynamics at the graphene-WS2 vdW interface under electrochemical gating by operando optical-pump terahertz-probe spectroscopy. We report full control over charge separation states and thus photogating field direction by electrically tuning the defect occupancy. Our results show that electron occupancy of the two in-gap states, presumably originating from sulfur vacancies, can account for the observed rich interfacial charge transfer dynamics and electrically tunable photogating fields, providing microscopic insights for optimizing optoelectronic devices.

The birth and evolution of solvated electrons in the water

The photo-induced radiolysis of water is an elementary reaction in biology and chemistry, forming solvated electrons, OH radicals, and hydronium cations on fast time scales. Here, we use an optical-pump terahertz-probe spectroscopy setup to trigger the photoionization of water molecules with optical laser pulses at ~400 nm and then time-resolve the transient solvent response with broadband terahertz (THz) fields with a ~90 fs time resolution. We observe three distinct spectral responses. The first is a positive broadband mode that can be attributed to an initial diffuse, delocalized electron with a radius of (22 ± 1) Å, which is short lived (<200 fs) because the absorption is blue-shifting outside of the THz range. The second emerging spectroscopic signature with a lifetime of about 150 ps is attributed to an intermolecular mode associated with a mass rearrangement of solvent molecules due to charge separation of radicals and hydronium cations. After 0.2 ps, we observe a long-lasting THz signature with depleted intensity at 110 cm-1 that is well reproduced by abinitio molecular dynamics. We interpret this negative band at 110 cm-1 as the solvent cage characterized by a weakening of the hydrogen bond network in the first and second hydration shells of the cavity occupied by the localized electron.

Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales

Optical pump terahertz probe spectroscopy (OPTP) is a versatile non-contact technique that measures transient photoconductance decays with femtosecond temporal resolution. However, its maximum temporal range is limited to only a few nanoseconds by the mechanical delay lines used. We extended the temporal range of OPTP to milliseconds and longer while retaining sub-nanosecond resolution. A separate pump laser was electrically synchronized to the probe pulses, allowing the pump–probe delay to be controlled with an electronic delay generator. We demonstrated the capabilities of this technique by examining the photoconductance decays of semiconductors with lifetimes ranging over six orders of magnitude: III-Vs, metal halide perovskites, germanium, and silicon. A direct comparison of results on silicon from OPTP and inductively coupled photoconductance decay highlighted the higher spatial and temporal resolution of OPTP, which allowed in-plane and out-of-plane carrier diffusion to be studied.

Ultrafast time-resolved carrier dynamics in tellurium nanowires using optical pump terahertz probe spectroscopy.

We report carrier relaxation dynamics in semiconducting tellurium nanowires (average diameter ∼ 10 nm) using ultrafast time-resolved terahertz spectroscopy. After photoexcitation using an 800 nm pump pulse, we observed an initial increase in the THz conductivity due to the absorption of THz radiation by photoexcited carriers. The time evolution of the differential conductivity (Δσ(τpp) = σpump on(τpp) - σpump off) shows a bi-exponential relaxation with the initial fast decay time scale of τ1 ∼ 25 ps followed by a longer relaxation time constant of τ2 ∼ 100 ps. Interestingly, the two time scales depend on the amount of the capping agent present on the surface of TeNWs, showing a faster relaxation of the photoexcited carriers as the percentage of capping decreases. This is physically interpreted as the surface state mediated relaxation mechanism of the photo-pumped carriers depending on the density of available surface states. A quantitative understanding is obtained using a coupled rate equation model taking into account the decay mechanisms determined from the surface mediated relaxation rate (DS) and direct recombination rate (DR) of the electron-hole pairs. Furthermore, the measured lattice temperature (TL) dependent dynamics, showing a faster relaxation at lower temperature, is understood using the same rate equation model, giving a power law dependence of the electron-hole recombination rate (DR) on TL as DR ∝ TL-1/2. This is explained by estimating DR using the van Roosbroeck-Shockley theory taking into account the density of states () of one-dimensional nanowires. Furthermore, to understand the measured frequency-dependent THz photoconductivity, we model Δσ(ω) using the Boltzmann transport equation taking into account the energy-dependent scattering rates showing the dominant role of short range (Γsr) and Coulomb scattering (ΓC) rates in the relaxation process, which further provides a measure of the charged and neutral impurity concentrations.

Photocarrier dynamics in Cd&lt;sub&gt;0.96&lt;/sub&gt;Zn&lt;sub&gt;0.04&lt;/sub&gt;Te measured by optical-pump terahertz-probe spectroscopy

Photogenerated carrier relaxation process and terahertz conductivity of Cd&lt;sub&gt;0.96&lt;/sub&gt;Zn&lt;sub&gt;0.04&lt;/sub&gt;Te are investigated by optical pump-terahertz probe spectroscopy at room temperature. With photoexcitation at 800 nm, the photogenerated carrier recovery process can be fitted with a single exponential curve, and its recovery time lasts several nanoseconds, which decreases with the increase of photogenerated carrier densities in a certain range of photogenerated carrier densities, relating to the radiative recombination of electron-hole pairs. The transient transmittance change of terahertz pulse remains the same with the photogenerated carrier densities increasing from 4.51×10&lt;sup&gt;16&lt;/sup&gt; cm&lt;sup&gt;–3&lt;/sup&gt; to 1.81×10&lt;sup&gt;17&lt;/sup&gt; cm&lt;sup&gt;–3&lt;/sup&gt;, which is because the number of loss carriers by defect trapping is approximate to the augment of carriers by photoexcitation. As the photogenerated carrier density increases from 1.81×10&lt;sup&gt;17&lt;/sup&gt; cm&lt;sup&gt;–3&lt;/sup&gt; to 1.44×10&lt;sup&gt;18&lt;/sup&gt; cm&lt;sup&gt;–3&lt;/sup&gt;, the magnitude of photoinduced absorption increases linearly with the increase of photogenerated carrier density due to the fact that most of the defects are occupied. When the photogenerated carrier densities are higher than 1.44×10&lt;sup&gt;18&lt;/sup&gt; cm&lt;sup&gt;–3&lt;/sup&gt;, the magnitude of photoinduced absorption remains almost the same, because the absorption of 800 nm pump pulse reaches a saturation level. The evolution of complex conductivity with photogenerated carrier density in a delay time of about 50 ps can be well fitted with Drude-Smith model. Our analysis provides an important data support and theoretical basis for designing and fabricating of Cd&lt;sub&gt;1–&lt;i&gt;x&lt;/i&gt;&lt;/sub&gt;Zn&lt;sub&gt;&lt;i&gt;x&lt;/i&gt;&lt;/sub&gt;Te detection.

Ultrafast Optomechanical Terahertz Modulators Based on Stretchable Carbon Nanotube Thin Films

For terahertz wave applications, tunable and rapid modulation is highly required. When studied by means of optical pump–terahertz probe spectroscopy, single-walled carbon nanotube (SWCNT) thin films demonstrated ultrafast carrier recombination lifetimes with a high relative change in the signal under optical excitation, making them promising candidates for high-speed modulators. Here, combination of SWCNT thin films and stretchable substrates facilitated studies of the SWCNT mechanical properties under strain and enabled the development of a new type of an optomechanical modulator. By applying a certain strain to the SWCNT films, the effective sheet conductance and therefore modulation depth can be fine-tuned to optimize the designed modulator. Modulators exhibited a photoconductivity change of approximately 2 times of magnitude under the strain because of the structural modification in the SWCNT network. Stretching was used to control the terahertz signal with a modulation depth of around 100% without strain and 65% at a high strain operation of 40%. The sensitivity of modulators to beam polarization is also shown, which might also come in handy for the design of a stretchable polarizer. Our results give a fundamental grounding for the design of high-sensitivity stretchable devices based on SWCNT films.

Ultrafast Photocarrier Dynamics in Vertically Aligned SnS2 Nanoflakes Probing with Transient Terahertz Spectroscopy.

By employing optical pump Terahertz (THz) probe spectroscopy, ultrafast photocarrier dynamics of a two-dimensional (2D) semiconductor, SnS2 nanoflake film, has been investigated systematically at room temperature. The dynamics of photoexcitation is strongly related to the density of edge sites and defects in the SnS2 nanoflakes, which is controllable by adjusting the height of vertically aligned SnS2 during chemical vapor deposition growth. After photoexcitation at 400 nm, the transient THz photoconductivity response of the films can be well fitted with bi-exponential decay function. The fast and slow processes are shorter in the thinner film than in the thicker sample, and both components are independent on the pump fluence. Hereby, we propose that edge-site trapping as well as defect-assisted electron-hole recombination are responsible for the fast and slow decay progress, respectively. Our experimental results demonstrate that the edge sites and defects in SnS2 nanoflakes play a dominant role in photocarrier relaxation, which is crucial in understanding the photoelectrochemical performance of SnS2 nanoflakes.

Ultraviolet-to-infrared broadband photodetector and imaging application based on a perovskite single crystal.

The organic-inorganic hybrid perovskite CH3NH3PbBr3(MAPbBr3) has been well developed in the X-ray to visible light band due to its superior optoelectronic properties, but this material is rarely studied in the infrared band. In this paper, a UV-NIR broadband optical detector based on MAPbBr3 single crystal is studied, and the response range can reach the near-infrared region. In the visible light band, the optical response of the device is mainly caused by the photoelectric effect; in the near-infrared band, the optical response of the device is mainly caused by the thermal effect. The carrier response of MAPbBr3 material under different wavelengths of light was investigated using a non-contact measurement method (optical pump terahertz (THz) probe spectroscopy). This paper also builds a set of photoelectric sensor array components, and successfully realizes the conversion of optical image signals to electrical image signals in the visible light band and infrared band. The experimental results show that MAPbBr3 crystals provide a new possibility for UV-NIR broadband photodetectors.