Optical Properties Of Sb Research Articles

Investigation on electrochemical deposition of Sb2Se3 thin films in aqueous acidic medium

• Thin films of Sb 2 Se 3 have been synthesized by electro-deposition method. • Bath pH and applied potential have a sizable effect on the films quality. • Annealing process is required to control the crystallization of Sb2Se3 thin films. • The suitable band gap of 1.23 eV for the solar cells is reached. Antimony selenide (Sb 2 Se 3 ) thin films were deposited on tin oxide coated glass substrates by potentiostatic electrodeposition from an acidic aqueous bath for 30 min followed by the annealing process in a tube furnace at 350 °C for 10 min under nitrogen atmosphere. The aim of this work is to investigate the effect of the bath solution's pH and the applied potential on the structural, morphological, compositional and optical properties of Sb 2 Se 3 thin films. The optimal deposition conditions and bath acidity were identified to produce good quality Sb 2 Se 3 films suitable for applications in terms of composition, crystallinity, morphology and band gap.

Size-controlled excitonic effects on electronic and optical properties of Sb2S3 nanowires.

In this work, the electronic and optical properties of one-dimensional (1D) Sb2S3 nanowires (NWs) with different sizes are investigated using first-principles calculations. The indirect-direct band transition of Sb2S3 NWs can be tuned effectively by the NW size and various uniaxial strains. In the Sb2S3 NWs, the quantum confinement effects result in wider bandgaps while the significantly enhanced electron-hole interaction that is expected to produce excitonic bound states generates a bandgap narrowing. The exciton binding energies for the Sb2S3 NWs are predicted by the effective masses of electrons and holes to lie in the range of 0-1 eV, which are larger than that of bulk Sb2S3, suggesting that excitons in Sb2S3 NWs may bind possible defects to promote luminescence. The size-controlled absorption edge blueshift and redshift of Sb2S3 NWs suggest that Sb2S3 NWs may be promising in the applications of nanoscale light emitting devices.

Ab initio Modeling of Elastic and Optical Properties of Sb and Bi Sesquioxides

First-principle calculations performed the structural, mechanical, electronic, and optical properties of Sb2O3 and Bi2O3 compounds in monoclinic (claudetite and α-Bi2O3) and orthorhombic (valentinite) structures. Local density approximation has been used for modeling exchange-correlation effects. The lattice parameters, bulk modulus, and the first derivate of bulk modulus (to fit to the Murnaghan’s equation of state) of considered compounds have been calculated. The second-order elastic constants have been calculated, and the other related quantities have also been estimated in the present work. The electronic bands structures and the partial densities of states corresponding to the band structures are presented and analyzed. The real and imaginary parts of dielectric functions and energy-loss function are calculated. Our structural estimation and some other results are in agreement with the available experimental and theoretical data.

A comparative study on the electronic and optical properties of Sb-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=- thin film

The thin film of Sb2Se3 was deposited by thermal evaporation method and the film was annealed in N2 flow in a three zone furnace at a temperature of 290oC for 30 min. The structural properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy, respectively. It is seen that the as-deposited film is amorphous and the annealed film is polycrystalline in nature. The surface of Sb2Se3 film is oxidized with a thickness of 1.15 nm investigated by X-ray photolecetron spectroscopy (XPS) measurement. Spectroscopic ellipsometry (SE) and UV-vis spectroscopy measurements were carried out to study the optical properties of Sb2Se3 film. In addition, the first principles calculations were applied to study the electronic and optical properties of Sb2Se3. From the theoretical calculation it is seen that Sb2Se3 is intrinsically an indirect band gap semiconductor. Importantly, the experimental band gap is in good agreement with the theoretical band gap. Furthermore, the experimental values of n,k,varepsilon1, and varepsilon2 are much closer to the theoretical results. However, the obtained large dielectric constants and refractive index values suggest that exciton binding energy in Sb2Se3 should be relatively small and an antireflective coating is recommended to enhance the light absorption of Sb2Se3 for thin film solar cells application. DOI: 10.21883/FTP.2017.12.45184.8396

Optical properties of Sb(Se,Te)I and photovoltaic applications

SbXI (X = Se, Te) are ferroelectric semiconductors that allow a variety of applications including optoelectronic and photovoltaic applications. An analysis of the optical properties is carried out starting from first-principles density-functional theory with orbital-dependent one-electron potentials. To go into the contributions to the optical properties more deeply, the absorption coefficients have been split into inter- and intra-species contributions and into atomic angular momentum contributions. The optical results are used to evaluate the efficiencies when this material is used to absorb sunlight at several sunlight concentrations and the usual radiative and the ferroelectric photovoltaic mechanisms. The results indicate their applicability in photovoltaic devices as absorbent of the solar spectrum with high conversion efficiency.

Research for Photoelectric Property of SnO<sub>2</sub> Doped Sb

based on Density Functional Theory, we investigated the electronic structures and the optical properties of Sb doped SnO2 with density of 12.5%.including band structure ,the density of state (dos),dielectric function and optical absorption spectrum. The results show that Fermi level access valence band gradually with the doped density. And this can attributed to the increased folded state. Which have enhanced the electrical and metal property of material ;The peaks of absorption Spectrum and dielectric spectrum correspond, Optical absorption edge decrease and the absorption peaks show blue shift.

Structural and optical properties of Sb[sbnd]Al co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD) with Sb as catalyst

The paper deals with study of SbAl co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD). The nanowires were synthesized by using ZnO:Al as target and Sb coated Si as substrate. At a growth temperature of 750°C, random oriented high density nanowires with a diameter of about 1μm and a length up to a few tens of micro meters were synthesized. The samples were annealed at 450, 550 and 650°C. The SbAl co-doped ZnO nanowires annealed at 650°C showed a significant change in lattice constant of 0.06° from XRD and widening of lattice fringe spacing of 0.56nm from TEM. From the XPS analysis, a peak at 539.5eV a near binding energy of SbO bond and peak at 76.2eV corresponding to AlO bonds confirms the penetration of oxygen. The suppression of A1T modes and E1(L0) modes from Raman spectroscopy confirms the depletion of oxygen vacancies. Thus resulting in a strong improvement in UV emission and reduction in visible emission as observed from room temperature PL.

Heat-treatment effect on the structural and optical properties of flash evaporated Sb2Te3thin films

The effect of thickness and heat treatment on the structural and optical properties of Sb 2 Te 3 thin films fabricated by using flash evaporation technique were investigated. The as-deposited films were found to be stoichiometric. For the as-deposited and annealed samples of thickness in the range of 20.7–120.5 nm, large variations in transmittance and reflectance were observed for wavelength below 2000 nm due to strong absorption, while slight variations were observed above 2000 nm. The optical constants, n and k , measured in the range of 500–4000 nm, increased slightly by annealing the samples at 573 K for 2 h in air and a red shift was observed. Allowed indirect transitions were observed for the as-deposited and the annealed samples. The results showed two energy gaps for these transitions varied from 0.28 to 0.31 eV for the as-deposited samples and from 0.56 to 0.54 eV for the annealed films. The spectral distribution of the real part of the dielectric constant e′ showed a maximum at 0.73 eV for the as-deposited films decreased to 0.65 eV by annealing.

Annealing and thickness effects on some electrical and optical properties of Sb:SnO2films

Effects of annealing and film thickness on the electrical and optical properties of Sb:SnO 2 films deposited by electron beam from bulk samples prepared using sintering technique have been investigated. A compromise between low resistivity and high transparency of the film has been studied using the factor of merit. This factor, which has been found maximum for film 100 nm thick annealed at 550 °C for 15 min, seemed to be enhanced with increasing annealing time and/or film thickness confirming the simultaneous improvements of transparency and conductance with the latters. Other optical and electrical parameters such as refractive index, width of energy gap, density of localized states, concentration and mobility of carriers and Seebeck coefficient have been studied also, discussed and correlated to the microstructure changes with annealing and film thickness.

Electrical and optical properties of Sb:SnO 2 thin films obtained by the sol-gel method

Transparent conducting thin films of antimony-doped tin oxide have been deposited by the sol-gel dip-coating (SGDC) method. Electrical properties are analyzed, and resistivity, Hall mobility, type and nunber of carriers measured as a function of the antimony doping. Optical properties are investigated through the spectral transmision and reflection of the layers. The nature of the forbidden band and the width of the gap are determined. Optical and electrical properties are compared with results obtaned on Sb:SnO 2 thin films elaborated by other methods such as chemical vapour deposition, sputtering and pyrolysis, and specific properties of the SGDC material are outlined.

Optical properties of Sb and SbO x films

The optical constants of Sb and SbO x films grown by d.c. sputtering are determined over a wide spectral (270–870 nm) and composition ( x = 0.12−2.0) range. Spectroscopic ellipsometry is used to determine the film optical constants. The composition of the films is obtained by combining nuclear reaction analysis and Rutherford backscattering spectrometry. Optical properties of the films change drastically at a critical oxygen content ( x = 0.19) which is related to the transition from a crystalline Sb-like film with optical properties similar to crystalline Sb to an amorphous Sb-like film. It will also be shown that amorphous SbO x films behave optically as a mixture of amorphous Sb-like material and a stoichiometric Sb oxide (Sb 2O 4, x = 2.0).

Antisite defects in narrow-gap layered chalcogenides of A 2VB 3VI type

The relationship between the concentration of antisite defects in narrow-gap semiconducting crystals of A V 2B VI 3 and the bond polarization are analyzed. A change in the bond polarization affects the energy of formation of antisite defects which results in a change in concentrations of antisite defects and free current carriers. These relationships are manifested on electrical and optical properties of Sb 2- x In x Te 3, Bi 2- x In x Te 3, Sb 2- x Tl x Te 3 and Bi 2Te 3- x S x crystals, where In × Sb, In × Bi, Tl × Sb and S × Te uncharged defects are formed, respectively. The application of the bond polarization principle leads to the preparation of a Bi 2Te 3-Bi 2Te 3- x S x p- n junction.

Luminescence properties of Sb 3+ in yttrium phosphates

The optical properties of Sb 3+ ion in Y 1− x Sb x PO 4 have been studied in the thermal range 2–500 K. Both emission and excitation spectra have been deconvoluted into gaussian curves. We found two strong emission bands with maxima at 3000 and 3950 Å and three excitation bands in the 2200–2500 Å region. Between 2 and 30 K, the luminescence intensity of the former emission decreases whereas that of the latter emission increases; the contrary takes place from 100 to 400 K. The nature of the excitation and emission transitions is discussed.

Optical Properties of Sb, Te, and Ti Films in the Vacuum Ultraviolet*

The reflectivity and transmissivity of Sb, Te, and Ti films have been measured in the range from 1600 to 450 A in order to compare the frequency at which the films change from a reflecting to a transmitting medium with the plasma frequency predicted by Bohm and Pines and also with electron energy characteristic losses in metals observed by Marton et al. and by Powell.

266. Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet: Om P. Rustgi, W. C. Walker and G. L. Weissier, J. Opt. Soc. Amer., 51, No. 12, 1357–1360, December 1961

266. Optical properties of Sb, Te, and Ti films in the vacuum ultraviolet: Om P. Rustgi, W. C. Walker and G. L. Weissier, J. Opt. Soc. Amer., 51, No. 12, 1357–1360, December 1961