Optical Energy Gap Research Articles

Impact of molecular configuration on the photoluminescence and electrical characteristics of poly-pyrrol-thiazol-imine polymers films.

The optical, photoluminescence, and electrical properties of Poly(Z)-PTI and Poly(E)-PTI, two Poly-Pyrrol-Thiazol-Imine polymers with comparable chemical structures but distinct configurations, were examined. Using the dip-casting method, polymer films were deposited on ITO substrates. UV-VIS spectroscopy revealed that both polymers diverged between 500 and 800nm, showing the impact of molecular arrangement, but showed similar absorption behavior for wavelengths shorter than 500nm. For Poly(Z)-PTI, the direct optical energy gaps were 2.06eV, while for Poly(E)-PTI, they were 1.78eV. Poly(Z)-PTI displayed an emission peak at 610nm (red) according to laser photoluminescence spectra, while Poly(E)-PTI peaked at 563nm (green-yellow). The capacitance behavior was revealed by electrochemical impedance spectroscopy. Nyquist plots suggested an equivalent circuit model of Rs (CRct)(QR)(CR) for both polymers, and the relaxation times were 15.9 ns for Poly(Z)-PTI and 89.5 ns for Poly(E)-PTI. The Mott-Schottky analysis verified the n-type conductivity, revealing 2.18 × 1016 cm- 3 carrier densities for Poly(Z)-PTI and 1.78 × 1016 cm- 3 for Poly(E)-PTI. At lower frequencies, both polymers exhibited limited conductivity and large dielectric constants. Insights into the possible uses of Poly-Pyrrol-Thiazol-Imine polymers in electrical and optoelectronic devices are provided by this study, which emphasizes the influence of molecular configuration on these polymers' characteristics.

Does the substrate and a buffer layer have a greater influence on poly(3-Hexylthiophene) films deposited by the chronocoulometry technique?

Abstract In this study, we investigate the interface morphology and optical properties of electrochemical poly(3-hexylthiophene) (P3HT) films deposited by electrochemical synthesis using the chronocoulometry technique on tin-doped indium oxide (ITO) and fluorine-doped tin oxide (FTO) and how the substrate used influences in the deposition of the films and their optical and morphological properties, as well as the buffer layer and the interface effect, with and without spin-coating films of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS). P3HT polymeric films were synthesized and deposited via the oxidation of the 3-hexylthiophene (3-HT) monomer and characterized via Raman spectroscopy. The morphology and thickness of the P3HT layer present in the samples ITO/P3HT, FTO/P3HT, ITO/PEDOT:PSS/P3HT, and FTO/PEDOT:PSS/P3HT were carried out using atomic force microscopy (AFM). The optical and electronic gap energy of P3HT were calculated from UV‒Vis spectra and cyclic voltammetry curves, respectively. The photoluminescence (PL) spectra showed broad and asymmetrical line shapes fitted by multi-Gaussian functions identifying different emission species. Emission ellipsometry spectroscopy was performed to study the energy transference between adjacent polymer chains. Our results show a higher linear polarized light emitted by ITO/PEDOT:PSS/P3HT film, ∼37%, thus demonstrating a significant decrease in the energy transfer. Based on these results, the efficiency of organic solar cells can be improved via the interaction of the polymer/polymer interface.

Structural, optical, and shielding investigation of PVA/Te composite for technological applications

Using the casting process, polymeric films made of polyvinyl alcohol (PVA) including varying percentages of Te were created to form PVA/Te composite at doping concentrations of Te (0, 4.76, 13.04, 20 wt %), which denoted as PT1, PT2, PT3 and PT4 respectively. XRD results show semicrystalline nature in PT1 and PT2 however with further increasing of Te contents, a nano-crystallite Te appeared in PT3 and PT4. The absorption spectrum confirms that PT3 film is a good option to be used in UV-shielding. PT4 film shows an abrupt rise in absorption coefficient at 0.5 eV, 1.5 eV and UV regions, hence this qualifies this sample for various optical applications. The optical energy gap of the films varies between 4.94 eV and 3.32 eV for the indirect transitions and between 5.3 eV and 4.5 eV for the direct transitions, the PT4 film has the lowest values of both direct and indirect energy gaps. Several methods were used to measure the average refractive index nav value. Furthermore, the nonlinear refractive index (n2) was estimated. PT4 possesses the highest value of both nav and n2. Furthermore, the radiation shielding coefficients have been estimated according to the Phy-X/PSD online software. The sample with the highest Te concentration, PT4, has the best radiation shielding between the films under investigation. The investigated polymer with high Te weight percentage is an optical system that can be used for solar cells, optoelectronics, electronics, nonlinear optics, optical filters and for radiation shielding.

The Annealing Temperature Effect Enhances the Structural and Optical Parameters of Bi2Te3 Thermally Evaporated Thin Films

The current work investigates the influence of the annealing temperature (373, 473 K) on the structural and optical properties of Bi2Te3 thin films produced by the thermal evaporation technique. The crystal structure of samples is examined using an X-ray diffraction, indicating that Bi2Te3 thin films have a Rhombohedral structure with space group R-3m. The crystallite size (D) increased from 10.85 to 14.46 nm by increasing the annealing temperature. Additionally, increasing the annealing temperature reduces the micro-strain and the dislocation density from (3.33 × 10−3 to 2.5 × 10−3) and (8.49 × 1015 to 4.78 × 1015) Lines / m 2 , respectively. These micro-strain and dislocation density reductions refer to the crystallinity enhancement of sample Bi2Te3 thin films. The transmittance and reflectance spectra were measured using an Fourier transform infrared spectrometer. All samples reveal direct and indirect transition types and both direct and indirect optical energy gap decreased with increased annealing temperature from (0.325 to 0.29 eV) and (0.24 to 0.274 eV), respectively. From transmittance and reflectance data, the refractive index is calculated. These results reveal the refractive index decreasing as temperature annealing increased from (2.45–1.79) at 3250 nm. Other optical parameters such as absorption index, dielectric constant, energy loss function, and optical conductivity were estimated.

Solvatochromism, electric dipole moments, optical properties and electronic structure of biphenylcarbonitrile liquid crystals

The UV–Vis. absorbance and fluorescence spectra of 4HC (4′-heptyl-4-biphenyl carbonitrile) and 4OB (4′-Octyl-4-biphenylcarbonitrile) liquid crystals were measured in 23 solvents with different polarities. As dependent on changing of solvents, while the change in absorbance spectrum of liquid crystals have less, change in fluorescence spectrum have more. Molecular interactions were quantitavely investigated by using Linear solvation energy relationships. Optical forbidden energy gap has been determined with using Tauc plot. The refractive index has been calculated with semi-empirical methods. The relationships between refractive index and Eg has been commented in n-hexane, acetic acid, water and 1,4-dioxane. The electric dipole moment has been calculated by using the Bilot-Kawski, Lippert-Mataga, Bakshiev, Kawski-Chamma-Viallet and Reichardt methods. Solvatochromic shifts showed to having large dipole moments of 4OB and 4HC LCs. Their molecular orbital energies, electric dipole moments, MEP, SAS, and reactivity properties of 4HC and 4OB LCs has been found by quantum chemical calculations. It was observed that the dipole moment of 4HC was higher than 4OB.

Fabrication of Ripple Structured Silicon Carbide (SiC) Films for Nano‐Grating and Solar Cell Applications

AbstractIn the present study, we aim to investigate the self‐organization of unexplored silicon carbide (SiC) film surfaces under 30 keV oblique Ar+ ions irradiation and hence unprecedented tailoring of optical and electrical characteristics with view of their uses in solar cells, gratings and nano‐ to micro‐scale devices. The surface morphology mainly consisted of triangular shaped nanoparticles which evolves into nanoscale ripple structures with an alignment parallel to the projection of ion beam direction. For the first time, we have demonstrated the fabrication of highly‐ordered ripple patterns with wavelength in visible region over SiC films and applicable as nano‐gratings. The underlying mechanism relies on the structural rearrangement due to transition of film microstructure from amorphous to mixed phase (crystalline, nano‐crystalline and amorphous) and lowering of C=C and C−C vibration modes by the heavier Si atoms. These nanostructured silicon carbide film shows unparalleled optical (energy gap decreases from 4.60±0.4 eV to 3.16±0.2 eV) & electrical characteristics (conductivity increases from 6.6×10−11 to 1.12×10−3 S/m with linear I−V behavior). Thus, we propose that ripple structured SiC films with wide band gap, high refractive index and high electrical conductivity with ohmic behaviour are promising candidates for application as window layer in solar cells and opto‐electronics.

Enhanced optoelectronic properties of spray deposited antimony-doped tin oxide thin films

Antimony-doped tin oxide (Sb:SnO2) thin films with varying Sb concentrations were deposited using the spray pyrolysis technique. A comprehensive analysis of the films' elemental, structural, and optoelectronic properties is presented. All films possess a polycrystalline single-phase nature and have a tetragonal rutile structure. As Sb concentration increases, the unit cell shrinks continuously, suggesting proper substitution of Sn4+ by Sb5+. This substitution causes a continuous increase in the concentration of charge carriers and a reduction in electron mobility. X-ray photoelectron spectroscopy investigations revealed the presence of asymmetric Sn 3d core-level peaks distinguished by peak splitting, which increases with increasing carrier concentration. Utilizing the plasmon absorption model, an effective mass value of (0.51 ± 0.07)me for the conduction electron at the fermi level is obtained. With increasing Sb concentration, the optical energy gap increases gradually from 3.84 eV for undoped SnO2 to 4.35 eV for 5.0 at. % Sb. After considering the Urbach tailing phenomenon as well as the Moss–Burstein effect, this increase was attributed to the increase in Moss–Burstein energy due to increased charge carrier concentration. Our study revealed that the film doped with 2.0 at. % Sb has the best optoelectronic properties, with a figure of merit of 4.18 (Ω/cm2)−1.

Preparation and Characterization of Au Quantum Dots Using Laser in Benzene and Study of the Pulse Energy effect on Quantum Size

Here, findings from a study on pulsed laser ablating of noble Au targets submerged in benzene solvent and a study on the effect of pulse energy on quantum size are presented. Three samples of gold quantum dots (AuQDs) are synthesized at pulse fluence of 4, 8, and 12 J/cm2, which is referred to as F1, F2, and F3, respectively. The prepared AuQDs were characterized by UV-Vis, HR-TEM, XRD, XPS, EDX, FTIR, Raman spectroscopy and Photoluminescence measurement. AuQDs that were synthesized have monocrystalline and cubic (FCC) structure, according to XRD patterns. It was found that the direct optical energy gap of AuQDs is enhanced to 2.6 eV. The emission peak of AuQDs photoluminescence emission spectra is at roughly 481, 445, and 437 nm, for F1, F2, F3 samples, respectively. The quantum size was reduced to 2 nm for sample F3. This strategy has the ability to prepare pure AuQDs in one step, with promising biosensor and bioimaging applications.

Diode Laser Irradiation Effects on Physical Properties of Titanium Dioxide Nano Fillers Doped Polyvinyl Alcohol Films

Study effect of diode laser (wavelength 650 nm) irradiation for different irradiant times (0.25, 0.5, 1.00, 3.00, and 4.00 hrs) on the physical properties of titanium dioxide (TiO2) possess particle size of 15.7 nm doped polyvinyl alcohol (PVA) films were experimentally investigated. The solution casting process has been utilized to create as-prepared TiO2/PVA nanocomposite films. Ultraviolet-Visible (UV-Vis) spectroscopy investigates the samples' optical characteristics by analyzing optical absorption spectra in a wavelength range of (200 - 900 nm) at room temperature (RT) of 300 K. The PVA matrix could be used to describe the influence. All optical constants produced artificially through laser radiation, like absorption, refraction index, extinction coefficient and complex dielectric constants, have decreased with increasing radiation times. On the contrary of optical energy gap they increased with increasing radiation times, according to the study's findings. TiO2 Nanoparticles (NPs) additions significantly impacted the PVA host's optical characteristics. When FTIR-spectrum regarding the TiO2/PVA nanocomposite films was examined in various ratios of irradiation times, the peak positions or bonds did not change; instead, they became smaller or larger as the irradiation time increased.

Passivator materials based on the benzothiazole-sulfonamide hybrid: Synthesis, optical, electrochemical properties, and molecular modeling for perovskite solar cells

This study presents the synthesis of N-(4-(N-carbamimidoylsulfamoyl)phenyl)benzo[d]thiazole-2-carbohydrazonoyl cyanide (NCSBC), a novel passivator material for perovskite solar cells (PSCs). The structure was confirmed by FTIR, ¹H NMR, and ¹³C NMR, while Hall-effect measurements revealed a hole mobility of 1.15 × 10³ cm²/Vs. UV–Vis analysis showed absorption peaks at 295 and 422 nm, corresponding to transitions related to azo groups and aromatic rings in NCSBC. The compound exhibited an optical energy gap of 2.47 eV, consistent with DFT-based molecular modeling. Thermal stability and electrochemical properties further validated its suitability for photovoltaic applications. Incorporating NCSBC into PSCs with an FTO/c-TiO2/MAPbI3/NCSBC/spiroMeOTAD/Ag device configuration resulted in a power conversion efficiency (PCE) of 16.21 %, compared to 14.47 % for the control. This work highlights NCSBC's potential for cost-effective, high-efficiency defect passivation in PSCs.

Structural and Optical Properties of SnS2:Cu Thin films prepared by chemical Spbay Pyrolysis

Thin filis have been prepared from the tin disulphide (SnS2 ), the pure and the doped with copper (SnS2:Cu) with a percentages (1,2,3,4)% by using ahemical spray pyrolysis techniqee on substrate of glass heated up to(603K)and sith thicknesses (0.7±0.02)?m ,after that the films were treated thermally with a low pressure (10-3mb) and at a temperature of (473K) for one hour. The influence of both doping with copper and the thermal treatment on some of the physical characteristics of the prepared films(structural and optical) was studied. The X-ray analysis showed that the prepared films were polycrystalline Hexagonal type. The optical study that included the absorptance and transmitance spectra in the weavelength range (300-900)nm demonstrated that the value of absorption coefficient (?) was greater than (104 cm-1) for the pure and doped films and that the electronic transitions at the fundamental absorption edge were of the indirect kind whether allowed or forbidden and the value of the optical energy gap in the case of the indirect transition, the allowed decreased from (2 eV) to (1.8,1.7,1.5,1.2)eV at the doping percentages (1,2,3,4)% respectively, also it was found that the value of energy gap for the pure and doped films increased after annealing. Tthe absorption and transmission spectra were used to find the optical constant including refractive index(n), extinction coefficient (k), imaginary and real part of dielectric constant (?1 &?2) , and it was found that all the optical constant was affected by changing the doping percentages; in addition to being affected after treating the films thermally

Effect of magnetic field on the structural, optical, and electrical properties of CdS nanoparticles in distilled water by using pulsed laser ablation

In this study, we investigated the impact that the incorporation of a magnetic field has on the properties of cadmium sulfide CdS nanoparticles as well as the performance of an n-CdS/p-Si heterojunction photodetector that was developed by the use of the pulsed laser ablation in a liquid method. Nd:YAG laser pulses (1.064 μm, 550 mJ) were utilized to ablate cadmium sulfide CdS nanoparticles in water. The synthesized nanoparticles were shown to have a polycrystalline hexagonal structure, as evidenced by the findings of the X-ray diffraction experiment, the crystallite size for cadmium sulfide CdS decreased from 4.611 nm to 4.518 nm. The lattice constants of cadmium sulfide CdS nanostructures were determined to be a = 4.1302, c = 6.702, and c/a=1.622. The strain and dislocation density of cadmium sulfide CdS exhibited an increase. Images taken from a field emission scanning electron microscope demonstrated the formation of spherical nanoparticles on the surface. A magnetic field was applied, increasing the CdS film's crystallinity. As a consequence of this enhancement, the particle size of the CdS decreased from 25.18 nm to 12.17 nm. A comparison was made between this and the size of the crystallites that appeared when no magnetic field was present. The EDS spectrum of magnetically prepared cadmium sulfide CdS films indicates the presence of Cd and S, and the weight percentage ratios [Cd]/[S], increase from 3.72 to 3.80. The transmission electron microscopy (TEM) pictures of CdS samples that were generated using a magnetic field contained particles of small size with a mean of 10.10 nanometers. From the FT-IR spectra of cadmium sulfide CdS prepared using a magnetic field within 400–4000 cm−1, the peaks (bands) of cadmium sulfide CdS at 617 cm−1 represent the bending vibration of Cd-S. As a result of the influence of a magnetic field, the optical energy gap of CdS nanoparticles increased from 2.30 eV to 2.72 eV, as indicated by the UV-Vis study. From PL emission spectra the values of the energy band gap of cadmium sulfide CdS increased from 2.45 eV at 505.7 to 2.47 eV when a magnetic field was applied. CdS NP films produced under the influence of a magnetic field were identified as having n-type characteristics by Hall effect assessments, Particle mobility was influenced by particle size. The effect of applying a magnetic field on the efficiency of the n-CdS/p-Si photodetector was investigated and analyzed. When a magnetic field was applied during ablation, the responsivity of n-CdS/p-Si heterojunction photodetectors increased from 0.498 A/W to 0.830 A/W at 510 nm. This was the result of the application of the magnetic field.

Amorphous to Polycrystalline Phase Transition of In Situ Annealed Ge Films: Structural, Morphological, Optical, and Electrical Characteristics

AbstractRadio Frequency (RF) sputtered germanium (Ge) thin films were deposited on glass substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600 °C. X‐ray diffraction (XRD) and Raman spectroscopy revealed that the Ge films were initially amorphous but transformed to polycrystalline after annealing at 450 °C. Further annealing up to 600 °C resulted in improved crystallinity. Strain studies of the films using XRD and Raman showed compressive (out‐of‐plane) and tensile (in‐plane) strains, respectively, throughout all the annealing temperatures. The surface morphology of the films was recorded using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), which showed grain growth with annealing temperatures. The optical energy gap evaluated from absorption spectra for crystalline films decreased with annealing temperature, indicating improvement in crystallinity of films. The resistivity of the films deduced using current‐voltage measurements was found to decrease with annealing temperature, which can be attributed to enhancement in grain size. This study establishes a correlation between strain, grain size, optical energy gap, and electrical resistivity with temperature for Ge films deposited on glass substrates. Thus, the present study provides insights into variation in physical and electrical properties of films with in situ annealing temperature for their applicability in optoelectronic devices.

Influence of gamma-irradiation on the physical properties of epoxy/polyaniline composites and application as gamma dosimeter

Abstract The epoxy/pani samples doped with a specified weight ratio of polyaniline pani ware prepare by casting method. Using different doses of gamma rays (0, 2, and 4 kGy) were used to irradiated the prepared samples. Irradiated and non-irradiated samples were imaged using a FE-scanning electron microscope and were found to have regular morphology, and irradiation had obvious effect on this morphology at 4 kGy. When studying the crystal structure of the samples, it was found the samples have a polycrystalline structure, and this structure tends to improve after irradiation, this was verified using X-ray diffraction. Likewise, D.C electrical conductivity increased with increasing gamma radiation doses. Also study the effect of irradiation with gamma rays on optical properties and demonstrate the clear effect of these rays on optical properties. It was also found that the optical energy gap with (indirect allowed transition) was decreases after the irradiation process. Together, these results indicate the possibility of using these samples in the manufacture of gamma dosimeters.

Investigating the Structural, Linear/Nonlinear Optical, and Photoluminescence Characteristics of CuO/ZnMn2O4 Nanocomposite for Physicochemical Applications

The structural, optical, and photoluminescence performance of CuO/ZnMn2O4 nanocomposites was investigated for optical applications. Nanocomposites of xCuO/(1-x)ZnMn2O4 (x; 0 to 0.7) were equipped using the sol-gel route. Synchrotron X-ray diffraction data were collected to examine the structural parameters. Rietveld refinement analysis reveals that the crystallite size decreases upon raising x from 0 to 0.7. High-resolution transmission electron microscopy revealed that the distribution of particle sizes demonstrates a relatively broad spectrum within the nanometer range. Raman spectroscopy investigations were applied to examine the structure’s vibrations. Scanning electron microscopy was used to examine the morphology of the formed samples. UV–vis spectrophotometry was applied to collect optical absorbance and reflectance measurements of the samples. Optical energy gap E g was determined utilizing the Kubelka-Munk method. The refractive index investigations were explored based on seven empirical formulas. The nonlinear optical parameters were explored as a function of CuO contents. The influence of CuO amount on the photoluminescence spectra was investigated. CIE chromaticity diagrams showed that all samples have various degrees of blue-violet colors. A significant improvement was achieved in the linear/nonlinear optical performance of nano ZnMn2O4 by forming CuO/ZnMn2O4 heterojunction, supporting the possible use of CuO/ZnMn2O4 nanocomposites in various optical applications.

Effect of replacing B2O3 with CuO on the structural, optical absorption, thermal, mechanical, and gamma-ray shielding properties of B2O3–Bi2O3–K2O glass

This paper delves into the effect of replacing B2O3 with CuO on the structural, optical absorption, thermal, mechanical, and gamma(γ)-ray shielding properties of four CKB glasses formulated as (65-y)B2O3–15Bi2O3–20K2O-yCuO (where y = 0, 0.3, 0.6, and 1.2 mol%). The glasses were created using the melt-quenching technique, and their non-crystalline structure was verified by X-ray diffraction (XRD) analysis. Fourier-transform infrared (FTIR) spectroscopy identified several structural groups, predominantly consisting of BO3, BO4 units, and B–O–B linkages. Thermal properties, assessed via Differential Scanning Calorimetry (DSC), indicated that the glass transition temperature was highest for the 0.3 mol% CuO sample (CKB0.3), demonstrating enhanced thermal stability in comparison to other compositions. Density measurements correlated positively with CuO concentration, peaking at 1.2 mol%, while molar volume, boron molar volume, oxygen packing density, and boron-boron separation distances showed a decreasing trend with increased CuO concentration. UV–Vis absorption spectroscopy indicated a decline in the optical energy gap and an increase in Urbach energy, attributed to the conversion of BO3 into BO4 units in the glass matrix. Mechanical properties, evaluated using the Makishima-Mackenzie model, demonstrated enhancements in elastic moduli and micro-hardness with rising CuO concentration. The γ-ray shielding properties (γ-RPs) were examined at energies of 0.662, 1.173, and 1.333 MeV, revealing that both the linear attenuation coefficient and effective atomic number reached their maximum values at 1.2 mol% CuO (CKB1.2). While CKB1.2 exhibited excellent mechanical and γ-ray shielding performance, CKB0.3 excelled in thermal stability and demonstrated γ-ray shielding efficiency comparable to CKB1.2. This suggests that CKB0.3 is a promising candidate for radiation shielding applications requiring a balanced combination of thermal stability and effective γ-ray attenuation properties, particularly at 0.662 MeV.

Tuning the optical and photophysical characteristics of DR1 through mixing with JGB

A dye mixture of Disperse red1 (DR1) and Janus green B (JGB) was prepared with different concentrations of the two dyes. The optical properties were studied for the two dyes and their mixtures in terms of the absorbance spectra. The direct optical energy gap in addition to the refractive index, extinction coefficient, dielectric constant and optical conductivity were estimated to the two dyes and their mixtures. The experimental energy gap was found to be 2.234 and 1.666 eV for DR1 and JGB respectively, while the values of the energy gaps for the mixtures were found to be ranging between these two values. On the other hand, the refractive index was found to be changed in a systematic way by changing the contents of the dye mixture. The same behavior was also observed for the dielectric constant and optical conductivity. The emission of the two dyes and their mixtures was studied in terms of fluorescence spectra using excitation wavelength of 300 nm where a change in the fluorescence intensity was observed by changing the contents of the mixture. Finally, TD-DFT simulations were performed for the two dyes and their mixture to study the electron density, electrostatic potential, energy gap and optical absorption spectrum and found to be compatible with the experimental measurements.

Effect of Laser Irradiation with 532 nm Wavelength on The Optical Properties of PVA/MR Solutions

Background: This work aims to study the impact of 532 nm laser irradiating on the optical properties of the Polyvinyl alcohol/ Methyl Red (PVA/MR) solution before and after laser irradiation 32mW with various times (0, 20, 30 and 40) minutes. Materials and Methods: The polymer (PVA) powder 500 mg was dissolved in 50 ml distilled water at temperature 80 ˚C and the methyl red (MR) 30 mg was dissolved in 10 ml at temperature 80 ˚C using solution dilution formula . A semiconductor laser with a wavelength of 532 nanometers was used to irradiate the solution. Results: The absorbance, reflectance, and transmittance spectrum of solution prior to and following laser irradiation were recorded. Then, the optical constants and energy gap were calculated. Conclusions: The irradiation with the 532nm laser leads to a break of the bonds (From the absorbance spectrum, it decreases as the irradiation time increases. This indicates the breaking of bonds.) that results in an increase in the transmittance spectrum, and the energy gap.

Synthesis of Cu-SnO<sub>3</sub> NCs by Photo Irradiation Method for Removal Tartrazine Dye Yellow in Aqueous Solutions

Background: Copper tin oxide (Cu-SnO3) is a cheap and easily accessible tunable that has a 2.5-5 eV bandgap. It is a desirable semi-conductor because of these components for a number of applications, including transparent conducting oxides, transistors, solar cells and photocatalytic. Objective: The aim of this research is to increase the rate of yellow dye removal percentage efficiency by using Photo Irradiation Method that rate was determined between (59 to 76) % by the simple chemical method. Methods: Photo irradiation method used to synthesis Cu-SnO3 from precursor materials, the solution is irradiated by photocell for 30min with cooling (5°C) then drop sodium hydroxide (4 g in 100 ml) then washed, isolated by centrifugation for 20 minutes, grinding the dried powder and calcinated at (450 °C). Results: The crystallite size and the crystal structure of Cu-SnO3 NPs are (43-8.2) nm with a tetragonal structure. Field Emission-Scanning Electron Microscopy (FESEM) results displayed the formation of spherical and semispherical and an average size of (35.97 - 74.43) nm. The optical energy gap value (Eg) is 5 eV. It is clear from the disappearance of tartrazine’s yellow hue in an aqueous solution that the combination was shaken at 298 K and 185 rpm. Conclusions: Prove that the removal percentage process by a photo-irradiation method is more effective than other used methods.

Self-biased photoelectrochemical photodetector based on liquid phase exfoliated SnSe nanosheets

The present article involves a liquid phase exfoliation technique to synthesize SnSe nanosheets. These nanosheets are deposited on an ITO glass substrate to make a thin film via an electrophoretic deposition (EPD) technique. Through the use of energy-dispersive X-ray analysis (EDAX), the cleanliness and chemical compositions of the film are examined. The surface topography of the deposited film is carried out by scanning electron microscopy (SEM). The orthorhombic crystal structure of SnSe thin film is verified by X-ray diffraction (XRD) analysis. The optical gap energy and absorbance profiles also exhibit a morphology-dependent response, as measured by ultraviolet–visible (UV–vis) spectroscopy. The Photoresponse performance of SnSe thin film-based PEC-type photodetector was carried out under illumination of poly and monochromatic wavelengths. SnSe nanosheet-based photodetector showed a maximum photocurrent of 14.50 μA under polychromatic light of intensity 100 mW/cm2, at zero bias. This study demonstrates how the Requirement for TMC semiconductors in optoelectronic devices increases due to their exceptional photoresponse performance.