Optical Data Storage Devices Research Articles

Doping Induced Optical Band Gap Modification of Potassium Dihydrogen Phosphate

Aim: Potassium dihydrogen phosphate (KDP) is an excellent nonlinear optical material that has many potential applications, such as laser frequency conversion, Qswitches, Pockels cells, 3-D optical data storage devices, etc. Doping enhances various optical parameters of KDP. Doping changes in the absorbance and dopants such as aspartic acid, succinic acid, glycine, and L-alanine improved the optical band gap of the sample. Background: KDP is a non-linear optic material that has many important applications. Many researchers all over the world are trying to improve its optical properties. Objective: To synthesise pure KDP and KDP doped with aspartic acid, succinic acid, glycine, and L-alanine. Also, to study the temperature stability of the grown samples using TGA, DTA, and DSC analysis, Method: Growth from solution at low temperatures is used for the growth of crystals. TGA, DTA, and DSC are used to analyse the stability of the samples against temperature variations. Results: KDP crystals of good quality were grown using the slow cooling solution growth technique. Determined their band gap using the Tauc Plot. Significant variations in the optical bandgap are noticed. Also, the TGA, DTA, and DSC characterizations were done. Conclusion: KDP solution and grown crystals of good quality were synthesized. The variation in the bandgap on doping is a significant result as the modifications in bandgap enable the sample to be used in a more enhanced applications. Also, the doped samples were stable for variations in temperature, like the pure KDP.

Photoinduced Transition from Quasi-Two-Dimensional Ruddlesden-Popper to Three-Dimensional Halide Perovskites for the Optical Writing of Multicolor and Light-Erasable Images.

Optical data storage, information encryption, and security labeling technologies require materials that exhibit local, pronounced, and diverse modifications of their structure-dependent optical properties under external excitation. Herein, we propose and develop a novel platform relying on lead halide Ruddlesden-Popper phases that undergo a light-induced transition toward bulk perovskite and employ this phenomenon for the direct optical writing of multicolor patterns. This transition causes the weakening of quantum confinement and hence a reduction in the band gap. To extend the color gamut of photoluminescence, we use mixed-halide compositions that exhibit photoinduced halide segregation. The emission of the films can be tuned across the range of 450-600 nm. Laser irradiation provides high-resolution direct writing, whereas continuous-wave ultraviolet exposure is suitable for recording on larger scales. The luminescent images created on such films can be erased during the visualization process. This makes the proposed writing/erasing platform suitable for the manufacturing of optical data storage devices and light-erasable security labels.

Pressure-induced tuning of physical properties in high-throughput metal halide MSn2Br5 (M = K, Cs) perovskites for optoelectronic applications.

The physical properties of the ferromagnetic oxide perovskites MSn2Br5 (M = K, Cs) were thoroughly examined using the GGA + PBE formalism of density functional theory. The investigation includes a comprehensive characterization of these materials under hydrostatic pressures ranging up to 25 GPa. Our work represents the first theoretical framework for exploring the behavior of MSn2Br5 (M = K, Cs) under pressure, providing valuable insights into their properties. To ensure the thermodynamic and mechanical stability of the studied compounds, we justified their stability through the analysis of formation energy and Born stability criteria. Furthermore, we conducted a thorough examination of the mechanical features of MSn2Br5 (M = K, Cs) based on various parameters, such as elastic constants, elastic moduli, the Kleinman parameter, the machinability index, and the Vickers hardness. Pugh's ratio and Poisson's ratio data show a ductile behavior for both compounds under stress. Moreover, our analysis of the refractive index suggests that both materials hold significant potential as candidates for ultrahigh-density optical data storage devices, particularly when subjected to appropriate laser irradiation. This finding opens up exciting possibilities for utilizing MSn2Br5 (M = K, Cs) in advanced optical technologies.

Long‐Lived UV‐Rewritable Luminescent Memory in a Fluoroperovskite Crystal

AbstractPhotostimulated luminescence phosphors are promising candidates for next‐generation optical data storage devices. Herein, optically‐reversible luminescence modulation is demonstrated using UV wavelengths in the fluoroperovskite RbCdF3:Mn, where the modulation is mediated by photostimulated luminescence processes. UV‐C stimulation enhances the luminescence from Mn2+ centers and simultaneously fills electron traps. This charging process occurs via electron transfer from Mn2+ ions to fluorine vacancies, yielding Mn3+ ions and F‐centers, and is mediated by conduction band transport. UV‐A stimulation restores the material to the initial state. This discharging process occurs via electron transfer from F‐centers to Mn3+ ions and is similarly mediated by conduction band transport. Moreover, the discharging process manifests Mn2+ photostimulated luminescence. The primary trap state has activation energies in the range 1.46 to 1.73 eV and has room temperature lifetimes exceeding 40 000 years. A kinetic model is presented and evaluated that accurately describes the charge transport and luminescence properties of the material. Thus, a material is presented via which ultra‐long term, multi‐level luminescent data storage can be realized, and a model via which precise control over the luminescence modulation and photostimulated luminescence intensities can be achieved.

Створення активних оптичних метаповерхонь на плівках халькогенідних напівпровідників зі зміною фазового стану

The development of meta-optics is due to human aspirations for the maximum miniaturization of optical elements, the design and control of light fluxes, as well as the improvement of visualization and image processing. Metasurfaces, i.e. arrays with subwavelength distances (smaller than the wavelength of light), and optically thin elements trigger new physical mechanism and phenomena that are very different from those observed in three-dimensional bulk materials. Thus, meta-devices perform complete control and management of the characteristics of the light flux (phase, amplitude, polarization) with the help of one flat layer. Compared to traditional bulky lenses, metasurface lenses have advantages such as flatness, light weight, and compatibility with semiconductor manufacturing technology. The use of active (reconfigurable) metasurfaces, the characteristics of which can be dynamically rearranged after manufacturing, makes it possible to significantly expand the capabilities of meta-optics. The paper presents the results of the analysis of the properties and technologies of creating optically active metasurfaces for optical image processing and transformation systems. Generalized methods of forming metasurfaces are described: self-organization, selective chemical etching, holographic and lithographic. To implement the work of active (reconfigured) metasurfaces based on materials with a change in phase state (amorphous/crystalline), heating technologies with electric current pulses of various amplitudes and durations and the action of direct optical radiation are used. The analysis of materials for the formation of optically active metasurfaces and devices based on them that simulate the front of a light wave and work on reflection and transmission is presented. Special attention is paid to the use of photosensitive chalcogenide semiconductors as metamaterials with a phase change. Examples of materials such as Ge2Sb2Te5 (GST) and AgxInSb2Te (AIST), which have been used for decades in optical data storage and electronic memory devices, are given. A series of novel compositions of optical phase change materials such as Ge2Sb2Se4Te (GSST), Sb2S3, Sb2Se3, Ge2Sb2Te3S2 and In3SbTe2 for optical and photonic applications are also proposed. Direct laser recording on photosensitive films of chalcogenide semiconductors with the use of technological equipment for laser recording of master disks is proposed as a promising method of forming arrays with submicron distances and realizing the work of active metasurfaces.

Multistimuli‐Responsive Luminescence of o‐Carborane Dyads via Restriction of Electron Transfer and Molecular Motion

AbstractThe striking change in the emission color/intensity of piezochromic luminescent materials in response to external mechanical stimuli (e.g., pressure, grinding, and stretching) has attracted attention due to potential applications in optical data storage devices, pressure sensors, and optoelectronic devices. The majority of organic materials show redshifted and quenched emission with increasing pressure. Herein, covalently linked donor/acceptor (D/A) o‐carborane dyads that exhibit dual luminescence peaks due to the occurrence of photoinduced electron transfer (PET) are reported. Interestingly, an anomalous phenomenon of pressure‐induced blueshifted and enhanced luminescence is clearly observed. From 1 atm to 1.09 GPa, the restriction of intramolecular motion increases the luminescence of o‐carborane dyads. At high pressures, the compressed o‐carborane unit suppresses PET and decreases the energy gap between the upper excited states. Since the rate of the internal conversion (IC) process is higher than that of PET, the charge transfer (CT) emission gradually disappears, causing the o‐carborane dyads to exhibit blueshifted luminescence. Therefore, a novel strategy for achieving the pressure‐induced enhanced and blueshifted luminescence characteristics of organic materials is reported in this work.

Phase Stability and Dual-Mode Photoluminescence Modulation in Er-Doped Lead Zirconate Titanate Antiferroelectrics.

The electric-field-modulation (E-modulation) of photoluminescence (PL) properties in bulk ceramics has attracted tremendous interest due to its potential application in optical data storage and communication devices. One promising approach of reversibly and largely modulating the PL intensity has been proposed in rare-earth Er3+-doped Pb0.96La0.04Zr0.9Ti0.1O3 (PLZT) antiferroelectrics (AFEs) based on the unique E-dependent antiferroelectric-ferroelectric (AFE-FE) phase transition. However, the AFE phase stability of PLZT doped with various Er contents and their E-modulated PL properties have not been systematically investigated. In this paper, the intrinsic AFE phase of PLZT-Er is found to be stabilized in the high-temperature and high-E regions with increasing Er3+ content. The enhanced AFE nature caused by increasing Er doping leads to a larger E-dependent PL tunability (∼35%). Moreover, the ceramics exhibit the characteristics of both upconversion and downconversion PL (UCPL and DCPL) effects. Based on the excellent E-dependent dual-mode PL tunability, an optoelectronic device named the optical latch is demonstrated, where an electric signal can be used to trigger a notable intensity change in both the UCPL and DCPL modes. This reversible E-dependent dual-mode capability in PLZT-Er sheds light on a feasible approach to optoelectronic applications.

Simultaneous Photo-Induced Magnetic and Dielectric Switching in an Iron(II)-Based Spin-Crossover Hofmann-Type Metal-Organic Framework.

Molecular materials possessing photo-tunable polarization switching is promising for optical switches, smart sensors, and data storage devices. However, it is challenging to devise a molecular material featuring simultaneous switchable magnetic and dielectric properties with regard to non-invasive and convenient light stimulus. Herein, we report a new Hofmann-type metal-organic framework (MOF) {Fe(bpt)[Pt(CN)4 ]} ⋅ 0.5anth (1, bpt=2,5-bis(4-pyridyl)thiophen; anth=anthracene), which displays thermo- and photo-switchable magnetic and dielectric properties. Photo-monitored structural analyses revealed that it was the photo-induced deformation of FeII coordination sphere and relative movement of guest anthracene that resulted in the variation of the local electric dipoles. These findings provide a new strategy to realize polarization switching through the light-induced spin crossover, and would be of fundamental significance for future photo-switchable and multifunctional materials.

Simultaneous Photo‐Induced Magnetic and Dielectric Switching in an Iron(II)‐Based Spin‐Crossover Hofmann‐Type Metal‐Organic Framework

AbstractMolecular materials possessing photo‐tunable polarization switching is promising for optical switches, smart sensors, and data storage devices. However, it is challenging to devise a molecular material featuring simultaneous switchable magnetic and dielectric properties with regard to non‐invasive and convenient light stimulus. Herein, we report a new Hofmann‐type metal–organic framework (MOF) {Fe(bpt)[Pt(CN)4]} ⋅ 0.5anth (1, bpt=2,5‐bis(4‐pyridyl)thiophen; anth=anthracene), which displays thermo‐ and photo‐switchable magnetic and dielectric properties. Photo‐monitored structural analyses revealed that it was the photo‐induced deformation of FeII coordination sphere and relative movement of guest anthracene that resulted in the variation of the local electric dipoles. These findings provide a new strategy to realize polarization switching through the light‐induced spin crossover, and would be of fundamental significance for future photo‐switchable and multifunctional materials.

Ion-irradiation-induced effects on the surface characteristics of Ge–Bi–Se thin films

In this study, fabricated amorphous chalcogenide Ge10Se70Bi20 thin films were irradiated with nitrogen (N+), argon (Ar+), hydrogen (H+) and oxygen (O+) ion beams. The compositions of the pure and irradiated films were investigated using X-ray diffraction, which confirmed the amorphous structures of the pristine and the irradiated Ge10Se70Bi20 thin films. The optical parameters such as optical bandgap, absorption edge, Urbach energy, Tauc parameter and extinction coefficient of the unirradiated and irradiated films were determined using ultraviolet/visible spectroscopy. The energy gap was found to reduce from 1.355 eV for unirradiated Ge10Se70Bi20 to 1.02, 0.73, 0.60 and 0.51 eV after irradiation with nitrogen, argon, hydrogen and oxygen ion beams, respectively. Meanwhile, the band tail of Ge10Se70Bi20, which is 0.12 eV, increased to 0.16, 0.40, 0.45 and 0.48 eV after irradiation with nitrogen, argon, hydrogen and oxygen ion beams, respectively. In particular, the conductivity increased by two orders after the pristine film had been exposed to an oxygen beam. The direct current electrical conductivity of the pristine film increased from 1.5 × 10−7 to 1.4 × 10−5 Ω−1 cm−1 after irradiation with an oxygen ion beam. Furthermore, the activation energy and Mott’s parameters of the original and irradiated Ge10Se70Bi20 films were deduced. The reported modifications of the optical and electrical parameters suggest the use of irradiated Ge10Se70Bi20 thin films in important applications – for example, optical data storage and optoelectronic devices.

Alkaline-Earth Metal Effects on Physical Properties of Ferromagnetic AVO3 (A = Ba, Sr, Ca, and Mg): Density Functional Theory Insights.

The effects of alkaline-earth metals on electronic, optical, thermodynamic, and physical properties of ferromagnetic AVO3 (A = Ba, Sr, Ca, and Mg) have been investigated by first-principles calculations within the GGA+U formalism based on density functional theory. The optimized structural parameters are in good agreement with the available experimental results that evaluate the reliability of our calculations. The cell and mechanical stability is discussed using the formation energy and Born stability criteria, respectively. The mechanical behaviors of AVO3 are discussed on the basis of the results of elastic constants, elastic moduli, Peierls stress, and Vickers hardness. The nature of the ductile–brittle transition of AVO3 compounds was confirmed by the values of Pugh’s ratio, Poisson’s ratio, and Cauchy pressure. The electronic band structures, as well as density of states, reveal the half-metallic behavior of BaVO3 and SrVO3. However, CaVO3 and MgVO3 exhibit spin-gapless and magnetic semiconductor characteristics, respectively. The microscopic origin of the transition from the half-metallic to semiconductor nature of AVO3 is rationalized using electronic properties. The presence of covalent, ionic, and metallic bonds in AVO3 compounds is found by the analysis of bonding properties. The single-band nature of half-metallic AVO3 is seen by observing hole-like Fermi surfaces in this study. Furthermore, the various thermodynamic and optical properties are calculated and analyzed. The refractive index suggests that AVO3 could be a potential candidate for applications to high-density optical data storage devices.

Polarized emission and mechanofluorochromism of benzothiadiazole based chromophores oriented by rubbing

Mechanofluorochromic (MFC) organic chromophores are a versatile class of materials whose applications include mechanical sensors, security inks and optical data storage devices. Molecules with Liquid-Crystal (LC) properties can be easily oriented by several techniques providing films with highly anisotropic properties. Thin organic films with polarized emission properties represent ideal materials for OLED applications requiring polarized emission, such as backlights for commercial LC displays. We have synthetized molecules and polymers composed of a rod-like rigid core based on the highly emissive benzothiadiazole moiety and flexible chains to produce oriented films with polarized emission in the green/yellow and red regions. Films oriented by mechanical rubbing display absorption anisotropies and emission polarization up to 5. Beside orienting the molecular axis of the molecules, mechanical rubbing induces a conformational relaxation towards their most stable and elongated state thanks to the arrangement of the terminal alcoxy chains. According to the chromophore molecular structure, the oriented films display either stable (polymers) or mechano-sensitive (molecules) polarized emissions with fluorescence efficiencies up to 1. In the molecular blends highly sensitive polarized mechanofluorochromism, originating from the peculiar modulation of the energy transfer efficiency directly in bulk, opens to smart sensors able to detect the direction of application of a mechanical stress.

A Review on Physical and Optical Properties of Zinc Tellurite Glasses Co-doped with different rare earth ions

In this work we review the effect of physical and optical properties with different ion zinc contents of tellurite base glass. The physical properties of the glasses were evaluated and the change in density, molar volume and ionic packing density in these glasses indicates the effect of ZnO different content show on the glasses structure. The study of optical properties such as the optical band gap and refractive index of zinc tellurite glass were studied. Zinc Tellurite glasses doped with Er3+ ions were synthesized by varies researcher. The glasses were characterized by X- ray diffraction, optical absorption and photoluminescence spectra. The glassy nature of zinc Tellurite host glass has been confirmed through XRD measurements. The glasses doped or co-doped with rare-earth ions have generated much interest due to the possibility of several promising applications such as optical data storage, visible laser, fibre amplifier, optical communication and sensor devices

Achieving Enhanced Photochromic Properties of Diarylethene through Host-Guest Interaction in Aqueous Solution.

Diarylethene (DTE) has been widely used in fluorescence probes, molecular logic gates, optical data-storage devices owing to the excellent photochromic property, while constructing high-performance photochromic DTE in aqueous media remains a big challenge. Herein we present several host-guest systems formed between cucurbit[n]uril (CB[n], n=7, 8, 10) and two water-soluble DTE derivatives 1 and 2. It was found that host-guest interactions not only affect the photophysical properties of photochromic guests, but also make great differences on the photoreaction process. Different host-guest binding behaviors also lead to different effects on the photochromic properties of guests. In the presence of CB[n], both 1 and 2 showed enhanced emission and higher fluorescence quenching ratio at photostationary state. Besides, CB[10]⋅1 exhibited faster response rate in cyclization reaction and better photofatigue resistance than free 1 in aqueous solution, while the supramolecular assembly of (CB[8])n ⋅(2)n showed slower response rate in both directions of the reversible photoreaction. Besides, the photofatigue resistance of 2 can be greatly improved through binding with CB[7]. Our results suggest that host-guest interactions could be an efficient way to improve photochromic properties of DTE in aqueous solution.

The new pyrazoline derivative 5‐(3,4-Dimethoxy‐phenyl)‐3‐(2,5‐dimethyl‐thiophene‐3‐yl),‐4,5‐dihydro‐pyrazole‐1‐carbothioic acid amide (DDPA) as an advisable candidate for optical linearity, nonlinearity, and limiting performance

The present report provides the linear and nonlinear optical studies of a pyrazoline derivative, 5‐(3,4-Dimethoxy‐phenyl)‐3‐(2,5‐dimethyl‐thiophene‐3‐yl),‐4,5‐dihydro‐pyrazole‐1‐carbothioic acid amide (DDPA). The UV–Vis absorption and emission spectra have been recorded and analyzed to estimate the linear optical characteristics. The linear optical properties like absorption coefficient (α0), refractive index (n0), extinction coefficient (K), optical conductivity (σ opt), and optical band gap (Eg) have been evaluated. The third-order nonlinear optical (NLO) properties have been examined using the Z-scan technique employing the continuous wave (CW) diode laser of 520 nm. The third-order nonlinear refractive index (n2), nonlinear absorption coefficient (β), nonlinear optical susceptibility (χ (3)), and the second-order hyperpolarizability (γ) have been enumerated for different dye solution concentrations as well as for several laser powers. The values of β, n2, χ (3), and γ were found to be of the order of 10−3 cm/W, 10−7 cm2/W, 10−6 esu, and 10−26 esu respectively. Furthermore, the compound DDPA has been screened by the same laser excitation for the optical limiting behavior and found to be exhibiting good agreement for this nature. Hence the compound DDPA reveals its potential applications for optical switching, optical communication, and optical data storage devices.

Large bandwidth and high-efficiency plasmonic quarter-wave plate.

A large bandwidth and high-efficiency subwavelength quarter-wave plate (QWP) is an indispensable component of an integrated miniaturized optical system. The bandwidth of existing plasmonic quarter-wave plates with a transmission efficiency of more than 50% is less than 320 nm in the near-infrared band. In this paper, a metallic quarter-wave plate with a bandwidth of 600 nm (0.95-1.55 µm) and an average transmittance of more than 70% has been designed and shows excellent potential to be used in miniaturized optical polarization detection systems and as an optical data storage device. For TE mode incident waves, this miniaturized optical element can be equivalent to a Fabry-Pérot (FP) resonator. Meanwhile, for the TM mode incident wave, the transmission characteristics of this structure are controlled by gap surface plasmon polaritons (G-SPPs) existing in the symmetric metal/insulator/metal (MIM) configuration.

Potential Third-Order Nonlinear Optical Response Facilitated by Intramolecular Charge Transfer in a Simple Schiff Base Molecule: Experimental and Theoretical Exploration.

A Schiff base, namely, 4-[(2-hydroxy-3-methoxybenzylidene) amino] benzoic acid (L1), has been synthesized by the condensation reaction. It has been characterized by Fourier transform infrared spectroscopy , UV–vis spectroscopy, single-crystal X-ray diffraction, and DFT/B3LYP calculations. Single-crystal X-ray crystallographic analysis revealed that L1 exists in the zwitterionic (N–H···...O) form. The supramolecular interactions were investigated by Hirshfeld surface analysis. In addition, third-order nonlinear optical (NLO) properties of L1 were also investigated. The nonlinear refractive index (n2), nonlinear absorption coefficient (β), and the third-order NLO susceptibility (χ(3)) have been estimated at different concentrations and at different laser powers using close and openaperture Z-scan data. The values of the parameters were found to be varying almost linearly with concentration and power. The present study revealed the utility of the material for various optoelectronic devices such as optical switches, optical data storage devices, and optical sensors. The optical limiting study reveals that this material can also be exploited as an instrument protector from unwanted laser illumination. Furthermore, the NLO behavior of L1 has also been studied by B3LYP/6-311++G(d,p) results.

A density functional theory (DFT) study of the doping effect on 4-[2-(2-N, N-dihydroxy amino thiophene) vinyl] benzenamine

In the present work, density functional theory was used at the B3LYP, CAM-B3LYP and B3PW91 levels with the 6–311 + + G (d, p) basis set, in other to study the structural, optoelectronic, nonlinear optical, piezoelectric and thermodynamic properties of 4-[2-(2-N, N-dihydroxy amino thiophene) vinyl] benzenamine (DATVB) molecule doped with chlorine and fluorine respectively. The results obtained show that doping significantly improves the properties of this material. The materials obtained after doping 4-[2-(2-(5-(bis (chlorooxy) amino) thiophene) vinyl] benzenamine (BCATVB) and 4-[2-(2-(5-(bis (fluorooxy) amino) thiophene) vinyl] benzenamine (BFATVB) are good semiconductors because their gap energy is range between 1 and 1.5 eV which is less than 3 ev. Their first order hyperpolarizabilities ({beta }_{mol}) are very high compared to para-nitroaniline (p-NA) known as reference molecule for nonlinear optical properties. The obtained results predisposes them as good nonlinear optical materials with applications in photonics, optical signal processing devices, dynamic imaging, data storage and computer devices. The piezoelectric and pyroelectric coefficients of the fluorinated molecule are higher than those of the reference organic molecule polyvinylidene fluoride. This led us to the conclusion that, these molecules can also be used for applications in piezoelectricity.

A new class of upconversion luminescence tuning materials based on non-photochromic reaction: Er3+-activated Ba0.7Sr0.3Nb2O6 ferroelectrics

The upconversion (UC) luminescence tuning of phosphors has attracted increasing interest as optical switches, optical sensing, and high-density optical data storage devices. However, the design and synthesis of photo-switchable inorganic luminescent materials were still at primary stage. In this work, a new type of UC luminescence regulation materials, Er3+-activated tetragonal tungsten bronze Ba0.7Sr0.3Nb2O6 ferroelectrics, showing strong susceptibility to visible light irradiation, was reported based on non-photochromic (N-PC) effect. Under visible light irradiation, the maximum luminescent modulation ability reached up to 79.4%. The tuning of UC luminescence was disclosed to tightly rely on the irradiation time and thermal treatment processes. Meanwhile, excellent reproducibility was also demonstrated. Besides, the luminescent readout almost had no any influence on the UC emission, indicating the extremely low destruction to the stored luminescent states. The mechanisms related to the UC luminescence and manipulation were also discussed. In contrast to the previous tuning way based on PC reaction, it is believed that this work shed new light for the understanding of UC modulation fundamentals.

Reversible photoluminescence modulation in praseodymium-doped bismuth titanate ceramics for information storage based on photochromic reaction

Photoluminescence materials with reversible luminescence regulation properties have great potential for applications in photoswitches, optical sensing, and high-density optical data storage devices. In this work, a series of Pr3+-doped Bi4Ti3O12 (BiT) ceramics were synthesized by a high-temperature solid-phase reaction method. It is well known that BiT is the most famous one within the Aurivillius ferroelectric (FE) system. Previous works routinely focused on the FE-related properties of BiT-based compounds, but little attention has been devoted to the luminescence, especially the luminescence modulation performance. Here, a large and reversible photoluminescence modulation by alternating visible light irradiation and thermal stimulus based on photochromic (PC) process was achieved. Meanwhile, the influence of sintering temperature on the luminescence modulation behavior was also illustrated. The luminescence regulation properties of the Pr3+-doped BiT ceramics prepared at optimized sintering temperature were investigated in detail. The mechanisms connected to the luminescence, luminescence manipulation, and PC effect were discussed. It is believed that Pr3+-doped BiT materials can be utilized as a kind of ideal optical medium for future information storage device.