Nonlocal Voltage Research Articles

Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides.

At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D ∼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.

Out-of-plane spin-to-charge conversion at low temperatures in graphene/MoTe2 heterostructures

Multi-directional spin-to-charge conversion—in which spin polarizations with different orientations can be converted into a charge current in the same direction—has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin-to-charge conversion can occur in unconventional configurations in which charge current, spin current, and polarization do not need to be mutually orthogonal. Here, we explore, in the low temperature regime, the spin-to-charge conversion in heterostructures of graphene with the low-symmetry 1T' phase of MoTe2. First, we observe the emergence of charge conversion for out-of-plane spins at temperatures below 100 K. This unconventional component is allowed by the symmetries of both MoTe2 and graphene and likely arises from spin Hall effect in the spin–orbit proximitized graphene. Moreover, we examine the low-temperature evolution of non-local voltage signals arising from the charge conversion of the two in-plane spin polarizations, which have been previously observed at higher temperature. As a result, we report omni-directional spin-to-charge conversion—for all spin polarization orientations—in graphene/MoTe2 heterostructures at low temperatures.

Electrical, optical, and magnetic properties of amorphous yttrium iron oxide thin films and consequences for non-local resistance measurements

We present magnetic characterization, charge resistivity, and optical photoluminescence measurements on amorphous yttrium iron oxide thin films (a-Y–Fe–O), with supporting comparisons to amorphous germanium (a-Ge) films. We measured magnetic properties with both SQUID magnetometry and polarized neutron reflectometry. These results not only confirm that a-Y–Fe–O is a disordered magnetic material with strong predominantly antiferromagnetic exchange interactions and a high degree of frustration, but also that it is best understood electrically as a disordered semiconductor. As with amorphous germanium, a-Y–Fe–O obeys expectations for variable-range hopping through localized electron states over a wide range of temperature. We also clarify the consequences of charge transport through such a semiconducting medium for non-local voltage measurements intended to probe spin transport in nominally insulating magnetic materials. We further compare non-local resistance measurements made with “quasi-dc” automated current reversal to ac measurements made with a lock-in amplifier. These show that the “quasi-dc” measurement has an effective ac current excitation with frequency up to approximately 22 Hz, and that this effective ac excitation can cause artifacts in these measurements including incorrect sign of the non-local resistance. This comprehensive investigation of non-local resistance measurements in a-Y–Fe–O shows no evidence of spin transport on micrometer length scales, which is contrary to our original work, and in line with more recent investigations by other groups.

Nonreciprocal nonlocal spin transport observed in Dirac semimetal Cd3As2 nanoplates

Nonreciprocal transport phenomena, such as current direction dependent resistance, have recently attracted substantial research interest due to the underlying physics and potential applications for high-performance rectifiers. Here we report the observation of nonreciprocal spin transport in Dirac semimetal ${\mathrm{Cd}}_{3}{\mathrm{As}}_{2}$ nanoplates under nonlocal configuration. Nonlocal spin voltage amplitude exhibits an anomalous nonreciprocity with respect to the direction of local bias current. It is found that the nonreciprocity is prominent in the region near current leads and becomes more significant upon increasing the bias current amplitude and tuning the Fermi level toward the Dirac point. This unusual nonreciprocity can be well understood by combining the charge current spreading and thermally induced spin polarization of topological surface states. Our results reveal the influence of thermal effect on the spin transport of topological surface states in nonlocal configuration, which should be valuable for thermal spintronics based on topological materials.

Magnon transport and thermoelectric effects in ultrathin Tm3Fe5O12 /Pt nonlocal devices

The possibility of electrically exciting and detecting magnon currents in magnetic insulators has opened exciting perspectives for transporting spin information in electronic devices. However, the role of the magnetic field and the nonlocal thermal gradients on the magnon transport remain unclear. Here, by performing nonlocal harmonic voltage measurements, we investigate magnon transport in perpendicularly magnetized ultrathin ${\mathrm{Tm}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (TmIG) films coupled to Pt electrodes. We show that the first harmonic nonlocal voltage captures spin-driven magnon transport in TmIG, as expected, and the second harmonic is dominated by thermoelectric voltages driven by current-induced thermal gradients at the detector. The magnon diffusion length in TmIG is found to be ${\ensuremath{\lambda}}_{\mathrm{m}}\ensuremath{\sim}0.3\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{m}$ at 0.5 T and gradually decays to ${\ensuremath{\lambda}}_{\mathrm{m}}\ensuremath{\sim}0.2\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{m}$ at 0.8 T, which we attribute to the suppression of the magnon relaxation time due to the increase of the Gilbert damping with field. By performing current-, magnetic field-, and distance-dependent nonlocal and local measurements we demonstrate that the second harmonic nonlocal voltage exhibits five thermoelectric contributions, which originate from the nonlocal spin Seebeck effect and the ordinary, planar, spin, and anomalous Nernst effects. Our work provides a guide on how to disentangle magnon signals from diverse thermoelectric voltages of spin and magnetic origin in nonlocal magnon devices, and establish the scaling laws of the thermoelectric voltages in metal/insulator bilayers.

Charge-Induced Artifacts in Nonlocal Spin-Transport Measurements: How to Prevent Spurious Voltage Signals

A lively discussion has emerged in both the valleytronics and spintronics communities, concerning the correct interpretation of nonlocal transport experiments. The authors contribute to this ongoing debate their overview of all mechanisms that can create charge-induced nonlocal voltages, which could be misattributed to spin- or valley-related effects. A detailed description of a further measurement artifact, apparently not discussed in the literature, is also included. Fortunately, special instrumentation can significantly reduce most of these measurement artifacts, and thus can strongly diminish the risk of misinterpretation.

Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry.

In low-dimensional systems, the combination of reduced dimensionality, strong interactions and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. Here we measured non-local voltage fluctuations in a multi-terminal device to reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. Using two-dimensional graphene as a noise thermometer, we measured the quantitative electronic thermal conductance of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observed signatures of energy transport mediated by long-range interactions in one-dimensional electron systems, in agreement with a theoretical model.

Quantum anomalous Hall edge channels survive up to the Curie temperature

Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a careful analysis of the non-local voltages on a multi-terminal Corbino geometry, that the chiral edge channels continue to exist without applied magnetic field up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator, and that thermally activated bulk conductance is responsible for this quantization breakdown. Our results offer important insights on the nature of the topological protection of these edge channels, provide an encouraging sign for potential applications, and establish the multi-terminal Corbino geometry as a powerful tool for the study of edge channel transport in topological materials.

Giant enhancement to spin battery effect in superconductor/ferromagnetic insulator systems

We develop a theory of the spin battery effect in superconductor/ferromagnetic insulator (SC/FI) systems taking into account the magnetic proximity effect. We demonstrate that the spin-energy mixing enabled by the superconductivity leads to the enhancement of spin accumulation by several orders of magnitude relative to the normal state. This finding can explain the recently observed giant inverse spin Hall effect generated by thermal magnons in the SC/FI system. We suggest a nonlocal electrical detection scheme which can directly probe the spin accumulation driven by the magnetization dynamics. We predict a giant Seebeck effect converting the magnon temperature bias into the nonlocal voltage signal. We also show how this can be used to enhance the sensitivity of magnon detection even up to the single-magnon level.

Nonlocal magnon-based transport in yttrium-iron-garnet–platinum heterostructures at high temperatures

The spin Hall effect in a heavy metal thin film allows to probe the magnetic properties of an adjacent magnetic insulator via magnetotransport measurements. Here, we investigate the magnetoresistive response of yttrium iron garnet/platinum heterostructures from room temperature to beyond the Curie temperature $T_\mathrm{C, YIG} \approx 560\,\mathrm{K}$ of the ferrimagnetic insulator. We find that the amplitude of the (local) spin Hall magnetoresistance decreases monotonically from $300\,\mathrm{K}$ towards $T_\mathrm{C}$, mimicking the evolution of the saturation magnetization of yttrium iron garnet. Interestingly, the spin Hall magnetoresistance vanishes around $500\,\mathrm{K}$, well below $T_\mathrm{C}$, which we attribute to the formation of a parasitic interface layer by interdiffusion. Around room temperature the non-local magnon-mediated magnetoresistance exhibits a power law scaling $T^{\alpha}$ with $\alpha = 3/2$, as already reported. The exponent decreases gradually to $\alpha \sim 1/2$ at around $420\,\mathrm{K}$, before the non-local magnetoresistance vanishes rapidly at a similar temperature as the spin Hall magnetoresistance. We attribute the reduced $\alpha$ at high temperatures to the increasing thermal magnon population which leads to enhanced scattering of the non-equilibrium magnon population and a reduced magnon diffusion length. Finally, we find a magnetic field independent offset voltage in the non-local signal for $T > 470\,\mathrm{K}$ which we associate with electronic leakage currents through the normally insulating yttrium iron garnet film. Indeed, this non-local offset voltage is thermally activated with an energy close to the band gap.

Relaxation Process of Spin-Polarized Quasiparticles in a Superconducting Nb Wire

A mesoscopic multi-terminal superconducting Nb strip with a spin injection terminal has been developed. We investigate the influence of the spin polarization on the relaxation process of the quasiparticle in the superconducting Nb. The position dependence of the nonlocal voltage provides the quasiparticle relaxation length. The relaxation length for the spin-polarized quasiparticle is found to show 12.5 percent increase from that for the un-polarized quasiparticle. This demonstration opens a new avenue for utilization of the the spin current in a superconducting device.

Negative nonlocal and local voltages (resistances) in a quasi-one-dimensional superconducting aluminum structure

To study a nonlocal electron transport in an aluminum superconducting quasi-one-dimensional structure, we measured negative nonlocal (local) direct current voltages in the structure in a magnetic field near the critical temperature. The structure is a normal-superconducting at Tcn<T<Tcw (Tcn and Tcw are the critical temperatures for narrow and wide wires, respectively, making up this structure). Negative voltage arises due to a quasiparticle current flowing through the N-S interface. We plotted the experimental and theoretical temperature and magnetic-field dependences of current, resistance and voltage corresponding to the peak of negative voltage, taking into account either equilibrium or nonequilibrium superconducting fluctuations.

Bulk valley transport and Berry curvature spreading at the edge of flat bands

2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path — this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands.

Valley pumping via edge states and the nonlocal valley Hall effect in two-dimensional semiconductors

Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect. Here, we use both simple microscopic tight-binding ribbon models and phenomenological bulk transport equations to emphasize the impact of sample edges on the nonlocal voltage signals. We show that the nonlocal valley Hall response is sensitive to electronic structure details at the sample edges, and that it is enhanced when the local longitudinal conductivity is larger near the sample edges than in the bulk. We discuss recent experiments in light of these findings and also discuss the close analogy between electron pumping between valleys near two-dimensional sample edges in the valley Hall effect, and bulk pumping between valleys due to the chiral anomaly in three-dimensional topological semimetals.

Sign reversal of nonlocal response due to electron collisions

Electron-electron collisions are known to cause a nonlocal voltage drop in a presence of current flow. The semi-phenomenological theory predicts this drop to be opposite to the direction of the current in the ballistic regime. We use a microscopic approach and show that the sign of this drop may be of both signs depending on the temperature and the distance between the source and probe contacts. The change of sign corresponds to the change of the dominant scattering process from head-on collisions to backward scattering of electrons. Our results agree with the experimental data.

Spin Accumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect

The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.

Generalized bulk–boundary correspondence in non-Hermitian topolectrical circuits

The study of the laws of nature has traditionally been pursued in the limit of isolated systems, where energy is conserved. This is not always a valid approximation, however, as the inclusion of features like gain and loss, or periodic driving, qualitatively amends these laws. A contemporary frontier of meta-material research is the challenge open systems pose to the established characterization of topological matter. There, one of the most relied upon principles is the bulk-boundary correspondence (BBC), which intimately relates the properties of the surface states to the topological classification of the bulk. The presence of gain and loss, in combination with the violation of reciprocity, has recently been predicted to affect this principle dramatically. Here, we report the experimental observation of BBC violation in a non-reciprocal topolectric circuit. The circuit admittance spectrum exhibits an unprecedented sensitivity to the presence of a boundary, displaying an extensive admittance mode localization despite a translationally invariant bulk. Intriguingly, we measure a non-local voltage response due to broken BBC. Depending on the AC current feed frequency, the voltage signal accumulates at the left or right boundary, and increases as a function of nodal distance to the current feed.

Nonlocal Detection of Out-of-Plane Magnetization in a Magnetic Insulator by Thermal Spin Drag.

We demonstrate a conceptually new mechanism to generate an in-plane spin current with out-of-plane polarization in a nonmagnetic metal, detected by nonlocal thermoelectric voltage measurement. We generate out-of-plane (∇T_{OP}) and in-plane (∇T_{IP}) temperature gradients, simultaneously, acting on a magnetic insulator-Pt bilayer. When the magnetization has a component oriented perpendicular to the plane, ∇T_{OP} drives a spin current into Pt with out-of-plane polarization due to the spin Seebeck effect. ∇T_{IP} then drags the resulting spin-polarized electrons in Pt parallel to the plane against the gradient direction. This finally produces an inverse spin Hall effect voltage in Pt, transverse to ∇T_{IP} and proportional to the out-of-plane component of the magnetization. This simple method enables the detection of the perpendicular magnetization component in a magnetic insulator in a nonlocal geometry.

Spin-momentum locking induced non-local voltage in topological insulator nanowire.

The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit an asymmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual asymmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.

Эффект спиновой аккумуляции в эпитаксиальной структуре Fe-=SUB=-3-=/SUB=-Si/n-Si и влияние на него электрического смещения

The electrical injection of a spin-polarized current into silicon was demonstrated in the Fe3Si/n-Si epitaxial structure. The spin accumulation effect was studied by measuring local and nonlocal voltage signals in a specially prepared 4-terminal device. The detected effect of electrical bias on the spin signal is discussed and compared with other results reported for ferromagnet/semiconductor structures.