Nonabsorbing Facets Research Articles

High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets

The structures of low-divergence 980 nm semiconductor lasers grown by molecular beam epitaxy are presented. The high-power, lower-beam-divergence laser consists of an array of closely spaced, tapered waveguides and nonabsorbing facets. The emission wavelength is 982 nm. The FWHM of the far-field pattern is 10×28°. Continuous-wave output power of 5.1 W has been achieved.

High power 980 nm nonabsorbing facet lasers

Laser diodes emitting at 0.98 µm with epitaxially grown nonabsorbing facets have been fabricated. Catastrophic facet damage is not observed at thermally limited powers as high as 500 mW. Accelerated lifetesting at 100 mW and 50°C shows the devices to have good reliability characteristics.

GaAlAs window lasers emitting 500 mW CW in fundamental mode

Single element GaAlAs lasers using the buried heterostructure geometry with tapered waveguides and incorporating nonabsorbing facets have been fabricated. Metalorganic chemical vapour phase deposition was used for the double heterostructure first growth, and liquid phase epitaxy was used for the current confining and nonabsorbing facet second growth. 500 mW CW in single spatial mode emission was obtained from devices with 1 mm long cavities.