Non-resonant Intense Laser Field Research Articles

Effects of magnetic, electric, and non-resonant intense laser fields on exciton binding energy and exciton absorption in a symmetric Gaussian single quantum well

Effects of magnetic, electric, and non-resonant intense laser fields on exciton binding energy and exciton absorption in a symmetric Gaussian single quantum well

Effects of non-resonant intense laser, electric and magnetic fields on exciton binding energy and absorption spectra in the Gaussian double quantum well

Effects of non-resonant intense laser, electric and magnetic fields on exciton binding energy and absorption spectra in the Gaussian double quantum well

Non-resonant intense laser field and electric field effects on the optical characterization of Rosen-Morse quantum wells with different potential functions

Non-resonant intense laser field and electric field effects on the optical characterization of Rosen-Morse quantum wells with different potential functions

Controlling the interband transitions in a triple quantum ring: Effects of intense laser and electric fields

In this paper, we theoretically studied the interband transitions in a three-dimensional structure of GaAs/Al0.3Ga0.7As triple concentric quantum rings approximating a reported experimental case. An intense non-resonant laser field and/or a static electric field were appropriately chosen to investigate the heavy-hole spectra and the interband transitions. For the combined actions of the two fields acting in the horizontal plane of the structure, we considered parallel and perpendicular directions. In each study, the effects on the heavy-hole energy spectra were discussed concerning their relationship with wave function localization. The radiative recombination energies, overlap integrals, and interband transition lifetime emphasize regions of interest for efficient control of the radiative decay, which is important for practical applications.

Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials

This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework incorporates higher-order anharmonic terms, specifically quartic and sextic terms. The solutions to the Schrödinger equation have been computed employing the finite element method and the effective mass theory. Moreover, linear and third-order nonlinear optical absorption coefficients are derived via a density matrix expansion. Our analysis reveals the feasibility of manipulating electronic and optical properties by adjusting confinement potential parameters, system attributes, and laser field intensity. In addition, the ILF induces remarkable modifications, characterized by reduced resonance peak amplitudes and a blue shift in absorption coefficients. Intriguingly, regardless of potential harmonicity, the impact of incident electromagnetic intensity is notably more pronounced in the absence of the ILF. These findings hold significant promise for advancing theoretical predictions, providing valuable insights into the intricate interplay between confinement potentials, laser fields, and their effects on electronic and optical behaviors within nanostructures.

Double Quantum Ring under an Intense Nonresonant Laser Field: Zeeman and Spin-Orbit Interaction Effects

We theoretically investigate the properties of an electron energy spectrum in a double GaAs-Al0.3Ga0.7As quantum ring by using the effective mass and adiabatic approximations, together with a realistic description of the confining potential profile, which is assumed to be deformed due to the application of an intense nonresonant laser field. The effects of the applied magnetic field and spin-orbit interaction are included. We discuss the features of the lowest confined energy levels under a variation of magnetic field strengths and intense laser parameters. The influence of this external probe on the linear optical absorption response associated with interlevel transitions is analyzed by considering both the presence and absence of spin-orbit effects.

Influence of a Non-Resonant Intense Laser and Structural Defect on the Electronic and Optical Properties of a GaAs Quantum Ring under Inversely Quadratic Potential

We investigated the impact of a non-resonant intense laser, structural defects, and magnetic fields on the electronic and optical properties of a simple GaAs quantum ring under the inverse quadratic Hellmann potential, using the effective mass and parabolic band approximations. We obtained the energies and wavefunctions by solving the 2D Schrodinger’s equation using the finite-element numerical technique to analyze this. We considered circular polarization to calculate the dipole matrix elements, which were influenced by the laser field and structural defects in the system. This enabled us to study the linear absorption coefficients. Our results demonstrated that the presence of a laser field and a structural defect disrupt the axial symmetry of the problem. When only the non-resonant laser was present, a pattern of excited states appeared in pairs, which oscillated with the magnetic field. However, the amplitude of the oscillation decreased as the magnetic field strength increased, and these oscillations disappeared when the structural defect was introduced. It was also noted that the intensity and position of the linear optical absorption peaks exhibited a non-monotonic behavior with the magnetic field in the absence of a structural defect. However, this behavior changed when the structural defect was present, depending on the type of polarization (right or left circular). Finally, a clear improvement in the absorption peaks with an increase in the laser parameter is reported.

Parabolic-Gaussian Double Quantum Wells under a Nonresonant Intense Laser Field.

In this paper, we investigate the electronic and optical properties of an electron in both symmetric and asymmetric double quantum wells that consist of a harmonic potential with an internal Gaussian barrier under a nonresonant intense laser field. The electronic structure was obtained by using the two-dimensional diagonalization method. To calculate the linear and nonlinear absorption, and refractive index coefficients, a combination of the standard density matrix formalism and the perturbation expansion method was used. The obtained results show that the electronic and thereby optical properties of the considered parabolic-Gaussian double quantum wells could be adjusted to obtain a suitable response to specific aims with parameter alterations such as well and barrier width, well depth, barrier height, and interwell coupling, in addition to the applied nonresonant intense laser field.

Tuning of nonlinear optical characteristics of a cylindrical quantum dot by external fields and structure parameters

ABSTRACT In this present study, we have theoretically investigated the effect of applied external electric field and non-resonant intense laser field, as well as the adjustable physical parameters (A, M, and η) of the system, on the linear and nonlinear of GaAs/GaAlAs cylindrical quantum dot. The confinement potential of the quantum dot is composed of the axial potential with a Razavy-type quantum well in the z-direction, and the cylindrical-type potential in the radial direction. To achieve this goal, the wave functions, and the corresponding eigenvalues of the electron are investigated by resolving the time-independent Schrödinger equation using the diagonalisation technique in terms of the effective mass approximation. The linear and nonlinear optical properties’ expressions have been calculated with the help of the compact density matrix method. Our numerical results show that by changing the A, M, and η parameters, we can see a blueshift or redshift in the total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs). Additionally, they are redshifted, and their extrema increase as the radius increases. The increase in electric field or laser field intensities generates a strong displacement of the resonant peak position towards the higher energies, diminishes the TOACs magnitude, and shrinks RRICs extrema. The model potential used in the computation is important, and the study of it will be practical in the development and research of nanostructures systems.

Thermodynamic behaviour of a D 2 + molecular complex in quantum rings under the combined effects of nonresonant intense laser field radiation and electric field

ABSTRACT A methodical study of the thermal properties of a hydrogen molecular ion strongly confined in a flat semiconductor quantum ring under external probes: intense laser-field radiation and static electric fields were carried out. The corresponding Schrödinger equation for these two coupled donors system was numerically solved by using the finite element method within the effective mass approximation. The effects of the donor angular and radial positions on the entropy, heat capacity and internal energy were analysed. Results show that the entropy of the system is maintained low as long as the molecule preserves its integrity but if the molecule is fragmented, the randomness of the system is substantially increased. Nevertheless, applying an intense laser or an external electric field can reduce this property in real time.

Theoretical Study of the Exciton Binding Energy and Exciton Absorption in Different Hyperbolic-Type Quantum Wells under Applied Electric, Magnetic, and Intense Laser Fields.

In this study, we investigated the exciton binding energy and interband transition between the electron and heavy-hole for the single and double quantum wells which have different hyperbolic-type potential functions subject to electric, magnetic, and non-resonant intense laser fields. The results obtained show that the geometric shapes of the structure and the applied external fields are very effective on the electronic and optical properties. In the absence of the external fields, the exciton binding energy is a decreasing function of increasing well sizes except for the strong confinement regime. Therefore, for all applied external fields, the increase in the well widths produces a red-shift at the absorption peak positions. The magnetic field causes an increase in the exciton binding energy and provides a blue-shift of the absorption peak positions corresponding to interband transitions. The effect of the electric field is quite pronounced in the weak confinement regime, it causes localization in opposite directions of the quantum wells of the electron and hole, thereby weakening the Coulomb interaction between them, causing a decrease in exciton binding energy, and a red-shift of the peak positions corresponding to the interband transitions. Generally, an intense laser field causes a decrease in the exciton binding energy and produces a red-shift of the peak positions corresponding to interband transitions.

In plane magnetic field and intense laser field effects on second harmonic generation of asymmetric AlGaAs/GaAs double quantum well

The optical properties for nano-structured semiconductor systems are of great importance nowadays, due to its possible implementation for the design of efficient optoelectronic devices. It is also well known that external fields can modify the electronic structure, and induce changes the optical properties as well. In particular the asymmetric double quantum well structures are of paramount importance because its wide range on possible configurations and also because are experimentally feasible and well controlled, particularly AlxGa1-xAs/GaAs heterostructures. In this work we report a systematic study on second harmonic generation (SHG) for an asymmetric AlxGa1-xAs/GaAs double quantum well as a function of non-resonant intense laser field and in-plane magnetic field effect. We analyze the energy level behavior as well as the dipole matrix elements as a function of the above mentioned factors that are important for the SHG. We report a particular configuration that optimize the SHG peak, with and without intense laser field effect, as well as magnetic fields, that also tune the SHG.

Effects of Intense Laser Field on Electronic and Optical Properties of Harmonic and Variable Degree Anharmonic Oscillators

In this paper, we calculated the electronic and optical properties of the harmonic oscillator and single and double anharmonic oscillators, including higher-order anharmonic terms such as the quartic and sextic under the non-resonant intense laser field. Calculations are made within the effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal functions to find eigenvalues and eigenfunctions of the electron confined within the harmonic and anharmonic oscillator potentials under the non-resonant intense laser field. A two-level approach in the density matrix expansion is used to calculate the linear and third-order nonlinear optical absorption coefficients. Our results show that the electronic and optical properties of the structures we focus on can be adjusted to obtain a suitable response to specific studies or aims by changing the structural parameters such as width, depth, coupling between the wells, and applied field intensity.

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications.

In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current–voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.

Regulation of optical properties by applied external fields for a quantum well with Hulthen potential

In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.

The non-resonant intense laser field effects on the binding energies and the nonlinear optical properties of a donor impurity in Rosen–Morse quantum well

The non-resonant intense laser field effects on the binding energies and the nonlinear optical properties of a donor impurity in Rosen–Morse quantum well

Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields

In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation have been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.

Non-resonant intense laser field effect on the nonlinear optical properties associated to the inter- and intra-band transitions in an anharmonic quantum well submitted to electric and magnetic field

Simultaneous effects of electric, magnetic, and non-resonant intense laser field on the nonlinear optical properties of a GaAs quantum well with an anharmonic confinement potential profile are theoretically investigated. Energy eigenvalues and eigenfunctions of the system are determined using the diagonalization method within the framework of the effective mass and parabolic band approximation. Nonlinear optical properties associated to the inter and intra band transitions are evaluated. Our numerical results for the intra-band response show that the resonance peak positions of the total optical absorption coefficients and relative refractive index changes shift towards higher energy levels (blueshift) by increasing the strength of the applied external electric, magnetic, and non-resonant intense laser field. The analysis of inter-band (electron-heavy hole) transitions reveals that the optical coefficients has a pronounced redshift induced by the electric field while a blueshift is caused by the magnetic and laser signals. It is seen that the nonlinear optical properties of such structures can be adjusted according to the purpose by changing the external perturbations and could be used in new optoelectronic device designs.

Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric AlxGa1−xAs/GaAs quantum well

The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization for asymmetric potential profiles enables to the semiconductor device designers to have possible ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the potential profile. Once the potential profile is well defined, with the desired range on operation, the external factors play also an important role on the optical properties tuning. In particular, in this paper we reported the absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for an AlxGa1−xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions reported here.

Effects of intense laser field and position dependent effective mass in Razavy quantum wells and quantum dots

Using the effective mass and parabolic band approximations, we investigated the position-dependent effective mass and non-resonant intense laser field effects on the first and third-order corrections of the absorption and relative changes of the refraction index coefficients for intersubband transition in Razavy-like quantum wells. Calculations have been extended to the spherical Razavy-like quantum dots electronic structure. We have shown that depending on the combinations of the Razavy-like potential parameters, the quantum wells can evolve from parabolic confinement in an isolated quantum well to a configuration of two coupled quantum wells. We have shown that in general the transition energies (dipole matrix elements) between the ground state and the first excited state: i ) are decreasing (increasing) functions of M -parameter, ii ) are increasing (decreasing) functions of A -parameter, iii ) they increase (decrease) when considering the position-dependent effective mass effects, and iv ) are increasing (decreasing) functions of the intense laser field parameter. In the case of the optical absorption and relative changes in the refractive index coefficients, we have shown blueshifts or redshifts by changing the A -, M -, and α 0 -parameters and by considering the effects of the position-dependent effective mass. In spherical quantum dots, we have shown that with an appropriate value of A - and M -parameters the system can evolve from a spherical quantum dot with infinite parabolic potential. • Intense laser field effects in quantum wells and dots. • Position dependent electron effective. • Linear and nonlinear optical absorption and refraction index changes coefficients. • Spatially direct and indirect excitones can be simulated in quantum rings.