The Cesium-based halide perovskites CsMF3 (M = Ge, Si) were examined in detail, using density functional theory evaluated ab-initio calculations, under hydrostatic pressures varying between 0 and 40 GPa. The structural, electronic, bonding, optical, anisotropic elastic, and mechanical characteristics of prospective photovoltaic materials are examined to assess their viability. The structural, thermodynamical, mechanical, and vibrational stabilities are validated through the analysis of the Goldschmidt tolerance factor, formation energy, Born stability criteria, and phonon calculations, respectively. Both the GGA-PBE model and the non-local hybrid sX potential were utilized to estimate the structural parameters and electronic energy band gaps. The calculated band gaps indicate that the compounds exhibit semiconductor behavior at ambient pressure with values 2.074 eV (2.642 eV) for CsGeF3, and 1.097 eV (0.977 eV) for CsSiF3 utilizing GGA-PBE (hybrid sX) potential. However, increased pressure reduces the band gap, resulting in enhanced conductivity and causing a shift from a semiconductor to a metallic state. The charge density map distinguishes between the ionic character of the Cs-F bond and the covalent nature of the Ge/Si-F bond. When pressure is applied, the bond strength increases, leading to a uniform decrease in bond length. The application of pressure also improves the optical functionalities, suggesting that these materials could be effectively utilized in various optoelectronic devices designed for the visible and ultraviolet spectra. In addition, hydrostatic pressure has a significant influence on the mechanical characteristics while retaining stability. Under pressure, both the ductile and anisotropic characteristics become more prominent for CsMF3 (M = Ge, Si) solids.
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