Noise In Junction Transistors Research Articles

Bipolar Junction Transistor 1/f Noise Simulation and Parameter Extraction Technique

In many cases it is important for practical applications to determine 1/f noise parameters of BJT for SPICE model but their exact values could not be theoretically predicted and must be obtained from the measurements. In this paper error sources in determination of noise parameters from measurement data are discussed. Different bipolar junction transistor noise measurement circuits are analysed using simulation technique to determine the most favourable circuit configuration and bias conditions. Some specific cases and problems related to noise parameter extraction are discussed. Ill. 8, bibl. 8 (in English; summaries in Lithuanian, English and Russian).

Noise in transistor mixers

Starting from the physical sources of noise in junction transistors, an equivalent noise circuit for a high frequency mixer circuit is presented. By means of formulas which have been derived for normal amplifiers and mixers the noise current components in the collector circuit are computed. These noise current components at the intermediate frequency are due to diverse amplifying and mixing processes. The dependence of the derived noise factor upon working point, generator output resistance, frequency and oscillator voltage is verified. The noise figure exhibits a minimum not only as a function of the generator output resistance but also as a function of the collector direct current. The noise figure may be optimized by choosing appropriate values for the circuit components and the operating point. Finally, the application of the noise formula to a dc-stabilized mixer stage is presented.

Noise in Junction Transistors

This paper gives a survey of the problem of shot noise and flicker noise in junction diodes and junction transistors. After a short introduction in Section I, the theory of shot effect is presented in Section II. First a simplified low-frequency theory is given and the close correspondence with earlier (heuristic) equivalent circuits is indicated. Then the theory is given in a more rigorous form, both from a collective point of view (Petritz, North, and van der Ziel) and from a corpuscular point of view (Uhlir, van der Ziel and Becking). Finally the conditions under which the theory holds are summed up and the possibility of deviations is discussed. Section III gives Fonger's theory of flicker noise in diodes and transistors and incorporates his discussion of base modulation effects into the equivalent noise circuit in a manner that differs somewhat from Fonger's original presentation. Section IV gives the experimental verification of the theory by Guggenbuehl and Strutt, Nielsen, Hanson and van der Ziel and others and also discusses some further experimental material. Finally, the problem of low-noise circuits, the choice of the operating point of the transistor, and the design criteria for low-noise transistors is discussed. Section V extends Fonger's theory of base modulation effects to shot effect and discusses possible consequences of this effect.

Theory of Junction Diode and Junction Transistor Noise

A. van der Ziel has given formulas for shot noise in junction diodes and junction transistors for transistors in which: 1) All current is carried by one type of carrier. 2) The carrier flow is one-dimensional. 3) The recombination is by volume recombination. These equations are here proved with the help of a corpuscular approach without any significant restrictions except that the individual holes can be treated as independent. The emitter and collector currents are then split into various parts for which the noise spectrum can be obtained by relatively simple reasoning.

Abnormal Noise in Junction Transistors during Secondary Ionization

Abnormal Noise in Junction Transistors during Secondary Ionization

Measurements of junction-transistor noise in the frequency range 7-50 kc/s

The paper describes an investigation to determine the variation of junction transistor noise with operating conditions (frequency, temperature, voltage and current) in the frequency range 7-50 kc/s. A detailed investigation involves a statistical analysis of a very large number of measurements, but since in this case it was required to determine only approximate laws, a small number of measurements were taken with the assumption of a large possible error. The noise voltages were measured using the superheterodyne principle to give constant bandwidth over the frequency range. The analysis of the results is made using the principle of two equivalent noise generators in the input circuit: theoretical considerations link these with the minimum noise factor and optimum source resistance, which together determine the noise characteristics of the transistor.

The authors' replies to the discussion on “Measurements of junction-transistor noise in the frequency range 7-50 kc/s”, “A germanium diffused-junction photo-electric cell”, “Transistor power amplifiers”, “Transistor d.c. convertors” and “Noise in silicon microwave diodes”

The authors' replies to the discussion on “Measurements of junction-transistor noise in the frequency range 7-50 kc/s”, “A germanium diffused-junction photo-electric cell”, “Transistor power amplifiers”, “Transistor d.c. convertors” and “Noise in silicon microwave diodes”

Discussion on “Measurements of junction-transistor noise in the frequency range 7-50 kc/s”, “A germanium diffused-junction photo-electric cell”, “Transistor power amplifiers”, “Transistor d.c. convertors” and “Noise in silicon microwave diodes” before a joint meeting of the Radio and Measurements Sections, 11th May, 1955

Discussion on “Measurements of junction-transistor noise in the frequency range 7-50 kc/s”, “A germanium diffused-junction photo-electric cell”, “Transistor power amplifiers”, “Transistor d.c. convertors” and “Noise in silicon microwave diodes” before a joint meeting of the Radio and Measurements Sections, 11th May, 1955

Note on Shot and Partition Noise in Junction Transistors

Note on Shot and Partition Noise in Junction Transistors

Shot Noise in Junction Transistors

Shot Noise in Junction Transistors