Noise Equivalent Power Values Research Articles

Enhancing Self‐Powered Terahertz Photodetection with VSe2 and Van Der Waals Heterostructure Integration via Photothermoelectric Effect

AbstractOwning unique optical and electronic properties, two dimensional (2D) materials have made remarkable strides in the field of photodetection applications. However, achieving highly sensitive and ultra‐broadband detection from microwave to terahertz (THz) range (0.02–0.54 THz) remains a significant challenge for photodetectors. This study presents a self‐powered THz photodetector based on VSe2 and its van der Waals heterostructure. The photoresponse of the photodetector is primarily attributed to the photothermoelectric effect. At room temperature, the device exhibits lower noise equivalent power values of 21 pW Hz−1/2 at 0.28 THz. This work has achieved ultra‐broadband detection and demonstrated the potential for large‐area imaging, providing a new avenue for the application of THz technology in nondestructive testing and biometric identification fields.

Terahertz bow-tie diode based on asymmetrically shaped AlGaN/GaN heterostructures

Asymmetrical shaping of AlGaN/GaN heterostructures containing a conductive layer of two-dimensional electron gas (2DEG) was used for the development of bow-tie (BT) diodes for room temperature terahertz (THz) detection. Considering operation of the THz BT diode in the unbiased mode as preferable for practical applications, we investigated the diodes with an obvious asymmetry of IV characteristics, which was found to be more pronounced with the decrease of an apex width, resulting in the sensitive THz detection. A nonuniform heating of carriers in a metalized leaf of the BT diode was attributed as the main mechanism that caused the rectification of THz waves. The responsivity and noise-equivalent power (NEP) at the fundamental antenna frequency of 150 GHz were up to 4 V/W and 2 nW/√Hz, respectively. Such high sensitivity of BT diodes allowed us to measure for the first time the response spectrum of the asymmetric BT antenna demonstrating fundamental and higher order resonances in good agreement with finite-difference time-domain simulation data in a broad spectrum range. The detailed investigation of the lowand high-frequency noise characteristics of AlGaN/GaN BT diodes revealed that only thermal noise needs to be considered for the unbiased operation, the value of which was relatively low due to a high density of 2DEG enabling low resistivity values. Moreover, we observed that the responsivity of BT diode scales with its resistance, revealing that tapering of the diode apex below a few microns could be ineffective in applications which require low NEP values.

High sensitivity of semimetal photodetection via Bose–Einstein condensation

AbstractThe discovery of semiconductor has witnessed remarkable strides toward high performance of photodetectors attributed to its excellent carrier properties. However, semimetal, owning to the high carrier concentration and low carrier mobility compared to those of semiconductor, is generally considered unsuitable for photodetection. Herein, we demonstrate an outstanding photodetection in a layered semimetal titanium diselenide (TiSe2) in Bose–Einstein condensation (BEC) state. High sensitivity of semimetal photodetector is realized in the range of visible, infrared and terahertz bands. The noise equivalent power (NEP) has threefold improvement at the visible and infrared wavebands, and significant decrease by one order of magnitude in the terahertz frequencies via BEC phenomenon, attributed to the electrical parameter variation after condensation. The best NEP value in the terahertz frequency is comparable to that of commercial Si photodetector. Our results show another recipe to fabricate high performance of photodetection via semimetal except for semiconductor and pave the way to exploit macroscopic quantum phenomena for optoelectronics.image

62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology

In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.

Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology

AbstractIn this work, real‐time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all‐enhancement a‐IGZO thin‐film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.

Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

The utilization of amorphous germanium-tin (Ge1-xSnx) semiconducting thin films as temperature-sensing layers in microbolometers was recently presented and patented. The work in this paper was performed as an extension of the latest study to acquire better Sn concentrations % for microbolometer applications. In this work, Ge1-xSnx thin films with various Sn concentrations %, x, where 0.31 ≤ x ≤ 0.48, were sputter-deposited. The elemental composition of each film was evaluated using energy-dispersive X-ray (EDX) spectroscopy, and the surface morphology was evaluated using atomic force microscopy (AFM), showing average roughness values between ~ 0.2 and 0.8 nm. Measurements of the sheet resistance versus temperature were performed and analyzed, revealing temperature coefficients of resistance, TCRs, ranging from –3.11%/K to –2.52%/K for x ranging from 0.31 to 0.40 above which the Ge1-xSnx thin film was found to exhibit metallic behavior at 0.40 < x ≤ 0.48. Empirical relationships relating the resistivity, TCR, and Sn concentration % of the amorphous Ge1-xSnx thin films were derived. One of the films with a 31% Sn concentration (Ge0.69Sn0.31) was used to fabricate 10×10 μm2 microbolometer prototypes using electron-beam lithography and lift-off techniques, and the microbolometer was fabricated on top of oxidized silicon substrates with no air gap between them. The noise behavior and the maximum detected signal of the fabricated microbolometer were measured. The signal-to-noise ratio, voltage responsivity, and noise equivalent power values of the prototypes were calculated. Finally, the expected performance of a proposed air-bridge microbolometer configuration was calculated.

A broadband detector based on series YBCO grain boundary Josephson junctions.

Modeling of a broadband receiving system based on a meander series of Josephson YBaCuO grain boundary junctions integrated into a log-periodic antenna was carried out. The electromagnetic properties of the system, namely amplitude–frequency characteristic, beam pattern, and fraction of the absorbed power in each Josephson junction were investigated. Based on the obtained results, a numerical simulation of one-dimensional arrays was carried out. The dc characteristics of the detector were calculated, that is, current–voltage characteristic, responsivity, noise, and noise-equivalent power (NEP) for a 250 GHz external signal. The optimal number of junctions to obtain the minimum NEP was found. The use of a series of junctions allows one to increase the responsivity by a factor of 2.5, the NEP value by a factor of 1.5, and the power dynamic range by a factor of 5. For typical YBaCuO Josephson junctions fabricated on a ZrYO bicrystal substrate by magnetron deposition, the following parameters were obtained at a temperature of 77 K: responsivity = 9 kV/W; NEP = 3·10−13 W/Hz(1/2); power dynamic range = 1·106.

Performance Enhancement of Inexpensive Glow Discharge Detector Operating in Up-Conversion Mode in Millimeter Wave Detection for Focal Plane Arrays

Performance enhancement of a very inexpensive millimeter-wave (MMW)/terahertz (THz) sensor for MMW/THz imaging systems is experimentally demonstrated in this study. The MMW sensor is composed of a glow discharge detector (GDD) and a light-to-frequency (LTF) converter combination. The experimental results given in this study show an improvement in the performance parameters of the detector element, such as the minimum detectable signal, as well as the signal to noise ratio (SNR) and the noise equivalent power (NEP), when a NIR long-pass filter was inserted between the GDD and the LTF combination. A detailed derivation of the NEP of this unique sensor is presented in this work. Based on this derivation and the experimental measurements, the NEP value was calculated.

Improvement of an InfraRed Pyroelectric Detector Performances in THz Range Using the Terajet Effect

An infrared (IR) pyroelectric detector was investigated for terahertz (THz) detection using the principle of the terajet effect, which focuses the beam beyond the diffraction limit. The terahertz beam was coupled to the detector’s optical window through a two-wavelength-dimension dielectric cubic particle-lens based on the terajet effect. We experimentally demonstrate an enhancement of about 6 dB in the sensitivity under excitation of 0.2 THz without degradation of the noise equivalent power value. The results show that the proposed method could be applied to increase the sensitivity of various commercial IR sensors for THz applications that do not require modification of the internal structure, and it may apply also to acoustics and plasmonic detectors.

Design of zero bias power detectors towards power consumption optimization in 5G devices

This paper presents the design and characterization of zero bias power detectors, based on MOSFET transistors, integrated in SiGe 55-nm BiCMOS technology from ST-Microelectronics. The working frequency bands of the circuits are located in the range (38–55) GHz, dedicated to optimize the power consumption in 5G devices. Three NMOS categories available in the technology are used (GP, LP, HPA), the aim is to design several detectors based on different NMOS categories in order to compare their performances. In addition, a detector based on a stack of 6 LP transistors is designed in order to increase the dynamic range. Compared to recent works, the HPA detector exhibits a very good performance with very low noise equivalent power value (NEP) 3.8 pW/Hz and large dynamic range of 67 ​dB. The extracted voltage sensitivity values of these detectors are between (850–1400) V/W showing good agreements with the simulation results.

Broadband Sensing Around 1 THz Via a Novel Biquad-Antenna-Coupled Low-NEP Detector in CMOS

We report on the design and characterization of a novel backside-radiating antenna-coupled direct terahertz detector fabricated in 65 nm CMOS technology. The novelty of the design lies in the low-metal coverage of the biquad antenna geometry, which adapts well to the particular challenging conditions of on-chip antenna integration in silicon and allows optimization for a versatility of operation conditions. The biquad antenna was modified here to achieve wideband radiation and matching to a gate-coupled single-finger field-effect transistor with ac open condition at the drain terminal. The successful detector performance was the result of a careful treatment of transistor, antenna, and optics from a codesign perspective, since the beginning of the design. This included the frequency-dependent complex impedance for optimum matching, the technology restrictions to ensure proper chip fabrication, and the overall detection efficiency after backing the device with a silicon lens. Calibrated detector measurements for 7777 Hz modulation frequency yielded minimum optical noise-equivalent-power (NEP) of 25 pW/ $\sqrt{\,}$ Hz at 1 THz, with NEP values below 50 pW/ $\sqrt{\,}$ Hz in the 0.84–1.29 THz frequency range. These figures achieve state-of-the-art of wideband CMOS-based detectors and are only a factor of ${{\sim}2}$ inferior to the best reported narrowband devices close to 1 THz.

Electro-thermal and optical characterization of an uncooled suspended bolometer based on an epitaxial La0.7Sr0.3MnO3 film grown on CaTiO3/Si

The electro-thermal and optical properties of a bolometer based on an La0.7Sr0.3MnO3( LSMO) thin film with a detection area of 100 × 100 µm2 are presented. The LSMO thin film was epitaxially grown on CaTiO3/Si and patterned using a two-step etching process of ion-beam etching in argon and of reactive-ion etching in SF6, in order to etch LSMO/CaTiO3 and Si, respectively. The voltage-current (V–I) characteristics of the bolometer were measured in vacuum from 240 K to 415 K. From the V–I characteristics and a thermal model of the bolometer, the electrical responsivity was determined and compared to the optical responsivity measured with a laser diode at 635 nm. The noise equivalent power (NEP) as a function of frequency was measured by dividing the spectral noise power density by the optical responsivity. At 300 K and a bias current of 80 µA, the NEP was 2.3 × 10−11 W · Hz−1/2 in the 20–200 Hz modulation frequency range and the response time was 1.3 ms. The obtained NEP value without any absorbing layer or antennas, combined with the low value of the response time, are a very promising step towards the use of such LSMO-based bolometers for IR or THz detection.

Improvement of a point-contact detector performance using the terajet effect initiated by photonics

A simple millimeter wave and terahertz (THz) receiver scheme that uses subwavelength focusing of electromagnetic beam on the point-contact detector area with waveguide dimensions is studied. A detection system with such an optical coupling scheme is implemented, where the signal to be detected is coupled to a detector through a mesoscale dielectric particle lens based on terajet effect. We have experimentally demonstrated an enhancement of the point-contact detector sensitivity higher than 6 dB and with 1.5 times decreasing of the noise equivalent power value. The results show that the proposed method could be applied to reduce the size and increase the sensitivity of various THz systems, including imaging, which would enable significant progress in different fields such as physics, medicine, biology, astronomy, etc.

Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6–2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range ω ≈ (0.3–6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP@1MHz ≈ 6.3 × 10–14 W/√Hz and δE ≈ 8.1 × 10–18 J, respectively.

Improvement of a Terahertz Detector Performance Using the Terajet Effect in a Mesoscale Dielectric Cube: Proof of Concept

Herein, a simple terahertz (THz) receiver that uses subwavelength focusing of the THz beam on the detector area is proposed. As a proof of concept, a THz detection system with an original optical coupling scheme is implemented, where the signal to be detected is coupled to a THz detector through a mesoscale dielectric particle lens. Coherent detection is successfully demonstrated with an enhancement of the detector sensitivity of about 4.3 dB, compared with that of a direct detection system with the slight decreasing (≈1.67 times) of noise equivalent power value. The results show that the proposed method can reduce the size and increase the sensitivity of various THz systems, including imaging, sensing, and ranging, which would enable significant progress in different fields such as physics, medicine, biology, astronomy, security, etc.

Thin-film heat-sensitive elements on the basis of semimetals for electromagnetic radiation receivers

The paper presents the generalized results of the authors’ work on the study of thin films of semimetals, which can be used in the development of universal electromagnetic radiation receivers. It is shown that thin-film materials based on semimetals have high thermal sensitivity, low intrinsic noise and an increased absorption coefficient of radiation in the millimeter region of the spectrum. Samples of bismuth films and bismuth–antimony films were obtained by vacuum thermal spraying. A study was made on the thermoelectric properties of bismuth–antimony thin films in the range from liquid helium temperature to room temperature in order to use these films as a bolometric type sensitive element in the range from infrared to radio frequency. A scheme and description of experimental installations for measuring current-voltage characteristics and determining the resistance of samples in the temperature range 1.4–400 K are presented. In the course of the study, the current-voltage characteristics and the temperature dependences of the resistance of film samples with a thickness of 80 and 20 nm were obtained. The characteristics of the manufactured prototype receiver were measured and used as a basis for estimating the possibility of developing bolometric-type receivers with increased NEP (Noise Equivalent Power). The NEP of the manufactured receivers at a frequency of 147 GHz was measured at room temperature and appeared to be ≈(0.3÷1)∙10 –9 Hz 1/2 . This NEP value can be improved by cooling the receiver to liquid nitrogen or helium temperatures.

Mixing Properties of Room Temperature Patch‐Antenna Receivers in a Mid‐Infrared (λ ≈ 9 µm) Heterodyne System

AbstractA room‐temperature mid‐infrared (λ = 9 µm) heterodyne system based on high‐performance unipolar optoelectronic devices is presented. The local oscillator (LO) is a quantum cascade laser (QCL), while the receiver is an antenna coupled quantum well infrared photodetector optimized to operate in a microcavity configuration. Measurements of the saturation intensity show that these receivers have a linear response up to very high optical power, an essential feature for heterodyne detection. By providing an accurate passive stabilization of the LO, the heterodyne system reaches at room temperature the record value of noise equivalent power (NEP) of 30 pW at 9 µm and in the GHz frequency range. Finally, it is demonstrated that the injection of microwave signal into the receivers shifts the heterodyne beating over the large bandwidth of the devices. This mixing property is a unique valuable function of these devices for signal treatment in compact QCL‐based systems.

Terahertz Detection With a Low-Cost Packaged GaAs High-Electron-Mobility Transistor

We present experimental results of an investigation into the performance of a commercial, packaged GaAs high-electron-mobility transistor (HEMT) as a detector of terahertz (THz) radiation in the frequency ranges 0.22–0.32 and 0.520–0.650 THz. Enclosed in a standard ceramic housing and without a dedicated antenna for radiation coupling, the transistor is capable of sensitive direct detection (power detection) of THz radiation at room temperature. The device responsivity shows a strong variation with wavelength, indicating that various device features (transistor metallization, contact pads, wires) act as an effective THz antenna. With the THz radiation focused with a parabolic mirror (and without a substrate lens), the maximum responsivity reaches 2.5 and 0.72 V/W with values of the minimum optical noise-equivalent power (NEP) of 1.4 and 2.5 nW/ $\sqrt{\mathrm{Hz}}$ at the sensitivity peaks at 0.271 and 0.632 THz, respectively. The performance of the HEMT, in comparison with antenna-coupled FET detectors optimized for THz detection (TeraFETs), can be assessed better if the responsivity and the NEP are referred to the effective antenna cross-section determined experimentally for the device. We arrive at a cross-sectional responsivity of 42 V/W (1.6 V/W) and a cross-sectional NEP of 135 pW/ $\sqrt{\mathrm{Hz}}$ (1250 pW/ $\sqrt{\mathrm{Hz}}$ ) at 0.271 THz (0.632 THz), for measurements through the ceramic cap. The cross-sectional NEP values are about one order of magnitude at 0.271 THz and two orders of magnitude at 0.632 THz higher than those achieved with the best TeraFETs, yet in a range where they enable many practical applications at low cost for the detector.

Noise characterization of patch antenna THz photodetectors

Current noise fluctuations have been investigated in terahertz (THz) quantum well photodetectors embedded in antenna-coupled photonic architectures and compared with standard substrate-coupled mesa detectors. The noise measurements give a value of the photoconductive gain that is in excellent agreement with that extracted from previous responsivity calibrations. Moreover, our results confirm that the noise equivalent power (NEP) of the antenna-coupled devices is of the order of 0.2 pW/Hz0.5. This low NEP value and the wide band frequency response (∼GHz) of the detectors are ideal figures for the development of heterodyne receivers that are, at present, a valuable technological solution to overcome the current limitation of THz sensors.

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

This letter reports on room temperature sub-THz detection using self-switching diodes based on an AlGaN/GaN heterostructure on a Si substrate. By means of free-space measurements at 300 GHz, we demonstrate that the responsivity and noise equivalent power (NEP) of sub-THz detectors based on planar asymmetric nanochannels can be improved and voltage controlled by means of a top gate electrode. A simple quasi-static model based on the DC measurements of the current-voltage curves is able to predict the role of the gate bias in its performance. The best values of voltage responsivity and NEP are achieved when the gate bias approaches the threshold voltage, around 600 V/W and 50 pW/Hz1/2, respectively. A good agreement is found between modeled results and those obtained from RF measurements under probes at low frequency (900 MHz) and in free-space at 300 GHz.