Nitrogen Defects In Diamond Research Articles

Nitrogen Defects in Diamond Examined by an Electron Microprobe

Nitrogen Defects in Diamond Examined by an Electron Microprobe

Identification of Nitrogen Defects in Diamond with Photoluminescence Excited in the 160–240 nm Region

Photoluminescence (PL) spectra of natural diamond powders of type IaAB at 300 and 13 K were excited with synchrotron radiation in the wavelength range of 150-260 nm. The spectral features observed in the excitation spectra at 13 K show four vibrational progressions related to nitrogen defects in diamond: A, B, B', and N3. Progression A has a spacing of 1258 ± 40 cm(-1), associated with the N2 (or A) center; progression B has a spacing of 1181 ± 40 cm(-1) and progression B' has a spacing of 744 ± 40 cm(-1) related to the N4 (or B) center; and progression N3 has a spacing of 1417 ± 40 cm(-1) associated with the N3 center. The PL of these defects comprise continuous emission with two broad lines with maxima of ∼420 and 469 nm at 300 K. Upon excitation with light at wavelengths of <200 nm, the distinct zero-phonon lines of N3 and N4 centers in diamond at a temperature of 13 K become prominent at 416.0 and 491.2 nm, respectively. The vibrational progressions in the photoluminescence excitation (PLE) spectra of N2, N3, and N4 centers in diamond of type IaAB at 13 K are identified for the first time. We suggest the use of PL spectra excited in the region of 160-240 nm to analyze and identify the type of diamond.

Analysis of Nitrogen Defects in Diamond with VUV Photoluminescence

Various diamonds were analyzed with photoluminescence (PL) spectra excited with synchrotron radiation in the wavelength range 160-250 nm. The emission of type IaAB diamond begins near 300 nm and extends to 700 nm; two broad lines with maximums about 419 and 469 nm correspond to energies 2.96 and 2.64 eV, respectively. The spectral features observed in the PL excitation spectra show two vibrational progressions, A and B, related to nitrogen defects in diamond. Progression A has a spacing 1266 ± 20 cm(-1) and is associated with the N2 (or A) center of a nitrogen defect, whereas progression B has a spacing 1177 ± 20 cm(-1) related to the N4 (or B) center of a nitrogen defect. These vibrational progressions in PL excitation spectra of N2 and N4 centers in type IaAB diamond are here identified for the first time. We suggest the use of PL spectra excited in the region 170-240 nm to analyze and to identify the type of diamond.

Nickel doping of nitrogen enriched CVD‐diamond for the production of single photon emitters

AbstractChemical vapour deposition has been utilised for the fabrication of nickel–nitrogen defects in diamond. By introducing nickel, as well as nitrogen into the process gas, this approach offers the advantage, that a direct formation of nickel–nitrogen centres on the growing surface is possible. This could therefore make postannealing steps superfluous. Nanocrystalline diamond films, as well as single crystal layers were grown under addition of nickel and nitrogen using different doping sources, namely: gaseous nickelocene, nickel powder and nickel wire. The amount of nickel present in the gas phase was characterised by optical emission spectroscopy (OES). In order to investigate the presence of nickel or nickel–nitrogen‐related defects, photoluminescence (PL) measurements at different temperatures have been applied. A strong fluorescence in the range between 800 and 900 nm, accompanied by a peak at around 817 nm, as well as a narrow peak at 788 nm has been observed at cryogenic temperatures (10 K). The peak at 788 nm indicates the presence of nickel and nickel–nitrogen‐related complexes in our samples. PL measurements at higher temperatures reveal, an initially rising intensity of a broad emission band at temperatures up to 200 K, while the emission is quenched at 300 K.

Diamond definition

Nitrogen defects in diamond are showing their potential for very-high-resolution magnetic sensing

Diamond wedding for spin couple

Observing coherent coupling between two quantum objects in the solid state is hard enough at millikelvin temperatures. Now, this has been achieved at room temperature — using nitrogen defects in diamond — opening up an avenue to practical quantum computing.

Temperature dependence of spin-spin and spin-lattice relaxation times of paramagnetic nitrogen defects in diamond

Spin-lattice relaxation times of P1 centers in a suite of two natural type Ib, two synthetic type Ib, and one natural type Ia diamonds were measured at 9.6 GHz as a function of temperature in the range 300 K&amp;gt;T&amp;gt;4.2 K. An analysis of the results revealed that for three of the diamonds (two synthetic type Ib and the natural type Ia) spin-orbit phonon-induced tunneling is the main relaxation mechanism. In the case of the Ia diamond cross-relaxation takes place between P1 and P2 centers. In the natural type Ib samples a much more effective relaxation mechanism dominates at lower temperatures. Electron spin resonance spectra of the latter samples revealed the presence of N3 centers. It seems that the more effective relaxation mechanism is associated with the N3 centers and that the P1 centers relax via the N3 centers to the lattice at these temperatures.

The dependences of ESR line widths and spin - spin relaxation times of single nitrogen defects on the concentration of nitrogen defects in diamond

Line widths and spin - spin relaxation times of P1 centres in synthetic Ib and natural Ia diamonds with concentrations of P1 and P2 centres covering the range 0.03 - 400 atomic parts per million have been measured. At concentrations higher than about ten atomic parts per million the line width is linearly dependent on the concentration. At lower concentrations the electron - dipolar contribution to the line width dominates and the width of the line remains constant. Since the pulse sequence employed for measurements eliminates the effects of inhomogeneous line broadening, of the line remains linearly dependent on the total paramagnetic impurity concentration, even at very low paramagnetic impurity concentrations.