NiO Hole Transport Layer Research Articles

Exploring Optoelectronic‐Thermal Coupling in Perovskite Solar Cells Utilizing Varied Hole Transport Layers

AbstractPerovskite solar cells (PSCs) have become a research hotspot both domestically and internationally due to their superior optoelectronic performance as a new type of thin‐film solar cell. One of the methods to enhance the performance of PSCs is the optimization of the hole transport layer(HTL). In this study, COMSOL Multiphysics simulation software is employed to model and simulate PSCs, and perform coupled simulations of the optical, electrical, and thermal properties of PSCs with different HTL. The simulations analyze the carrier concentration, Shockley–Read–Hall (SRH) recombination, electric field profile, and temperature distribution in the devices. The simulation results demonstrate that among the different HTL (CuO, Spiro‐OMeTAD, and NiO), NiO exhibited more favorable characteristics as a HTL for improving the photovoltaic conversion efficiency of PSCs. The photovoltaic conversion efficiency reached 17.14% with NiO as the hole transport layer, and the SRH recombination rate in PSCs based on NiO HTL of PSCs is lower than CuO and Spiro‐OMeTAD, facilitating efficient charge transport. Furthermore, the temperature distribution of PSCs is analyzed based on different HTL, and the results indicate that PSCs with NiO as the hole transport layer exhibited higher thermal stability.

Metal-Organic Framework Glass Catalysts from Melting Glass-Forming Cobalt-Based Zeolitic Imidazolate Framework for Boosting Photoelectrochemical Water Oxidation.

Sluggish oxygen evolution kinetics and serious charge recombination restrict the development of photoelectrochemical (PEC) water splitting. The advancement of novel metal-organic frameworks (MOFs) catalysts bears practical significance for improving PEC water splitting performance. Herein, a MOF glass catalyst through melting glass-forming cobalt-based zeolitic imidazolate framework (Co-agZIF-62) was introduced on various metal oxide (MO: Fe2O3, WO3 and BiVO4) semiconductor substrates coupled with NiO hole transport layer, constructing the integrated Co-agZIF-62/NiO/MO photoanodes. Owing to the excellent conductivity, stability and open active sites of MOF glass, Co-agZIF-62/NiO/MO photoanodes exhibit a significantly enhanced photoelectrochemical water oxidation activity and stability in comparison to pristine MO photoanodes. From experimental analyses and density functional theory calculations, Co-agZIF-62 can effectively promote charge transfer and separation, improve carrier mobility, accelerate the kinetics of oxygen evolution reaction (OER), and thus improve PEC performance. This MOF glass not only serves as an excellent OER cocatalyst on tunable photoelectrodes, but also enables promising opportunities for PEC devices for solar energy conversion.

Metal‐Organic Framework Glass Catalysts from Melting Glass‐Forming Cobalt‐Based Zeolitic Imidazolate Framework for Boosting Photoelectrochemical Water Oxidation

AbstractSluggish oxygen evolution kinetics and serious charge recombination restrict the development of photoelectrochemical (PEC) water splitting. The advancement of novel metal–organic frameworks (MOFs) catalysts bears practical significance for improving PEC water splitting performance. Herein, a MOF glass catalyst through melting glass‐forming cobalt‐based zeolitic imidazolate framework (Co‐agZIF‐62) was introduced on various metal oxide (MO: Fe2O3, WO3 and BiVO4) semiconductor substrates coupled with NiO hole transport layer, constructing the integrated Co‐agZIF‐62/NiO/MO photoanodes. Owing to the excellent conductivity, stability and open active sites of MOF glass, Co‐agZIF‐62/NiO/MO photoanodes exhibit a significantly enhanced photoelectrochemical water oxidation activity and stability in comparison to pristine MO photoanodes. From experimental analyses and density functional theory calculations, Co‐agZIF‐62 can effectively promote charge transfer and separation, improve carrier mobility, accelerate the kinetics of oxygen evolution reaction (OER), and thus improve PEC performance. This MOF glass not only serves as an excellent OER cocatalyst on tunable photoelectrodes, but also enables promising opportunities for PEC devices for solar energy conversion.

Theoretical investigations of all inorganic Cs2SnI6 double perovskite solar cells for efficiency ∼ 30 %

Non-toxic and air-stable Cesium tin (IV) halide (Cs2SnI6) is a promising alternative to lead halide perovskite for photovoltaic applications. This study reports the extensive analysis of vacancy-ordered Cs2SnI6 perovskite as an efficient light harvester sandwiched between the n-ZnO electron transport layer (ETL) and different p-type metal oxides, namely CuBi2O4, Cu2O, CuAlO2, and NiO, hole transport layers (HTL), using SCAPS-1D software. Various physical parameters, viz. thickness, defect density (bulk and interfacial), and charge carrier concentration of different layers for the device architecture of FTO/ZnO/Cs2SnI6/HTL/Au, are systematically investigated along with the effect of parasitic resistance, work function, and operating temperature in the quest for best device performance in terms of photoconversion efficiency (PCE). The effect of DC biasing voltage is analyzed using C-V characteristics to understand the spatial charge distribution, absorber doping profile, and junction built-in potential. The frequency-dependent admittance was studied using simulated C-f characteristics to give an insight into the defect and the conductance. The Cesium tin (IV) halide (Cs2SnI6) based device optimized with CuBi2O4, Cu2O, CuAlO2, and NiO HTLs has shown PCE of 28.18 %, 29.72 %, 29.43 %, and 29.33 %, respectively.

A Top‐Down Strategy for Reforming the Characteristics of NiO Hole Transport Layer in Inverted Perovskite Solar Cells

The hole transport layer (HTL) plays a key role in inverted perovskite solar cells (PSCs), and nickel oxide has been widely adopted for HTL. However, a conventional solution‐processed bottom‐up approach for NiOx (S‐NiO) HTL fabrication shows several drawbacks, such as poor coverage, irregular film thickness, numerous defect sites, and inefficient hole extraction from the perovskite layer. To address these issues, herein, a novel NiOx HTL top‐down synthesis route via electrochemical anodization is developed. The basicity of the electrolyte used in anodization considerably influences electrochemical reactions and results in the structure of the anodized NiOx (A‐NiO). The optimized A‐NiO provides outstanding optoelectrical properties, including uniform film thickness, enhanced transmittance, deep‐lying valance band, low trap density, and better hole extraction ability from the perovskite. Owing to these advantages, the A‐NiO‐based inverted PSC exhibits an improved power conversion efficiency of 21.9% compared with 19.1% for the S‐NiO‐based device. In addition, the A‐NiO device shows a higher inlet and long‐term ambient stability than the S‐NiO device due to the superior hole transfer ability of A‐NiO, which suppresses charge accumulation between NiOx and the perovskite interface.

Routes to increase performance for antimony selenide solar cells using inorganic hole transport layers

Simple compound antimony selenide (Sb2Se3) is a promising emergent light absorber for photovoltaic applications benefiting from its outstanding photoelectric properties. Antimony selenide thin film solar cells however, are limited by low open circuit voltage due to carrier recombination at the metallic back contact interface. In this work, solar cell capacitance simulator (SCAPS) is used to interpret the effect of hole transport layers (HTL), i.e., transition metal oxides NiO and MoO x thin films on Sb2Se3 device characteristics. This reveals the critical role of NiO and MoO x in altering the energy band alignment and increasing device performance by the introduction of a high energy barrier to electrons at the rear absorber/metal interface. Close-space sublimation (CSS) and thermal evaporation (TE) techniques are applied to deposit Sb2Se3 layers in both substrate and superstrate thin film solar cells with NiO and MoO x HTLs incorporated into the device structure. The effect of the HTLs on Sb2Se3 crystallinity and solar cell performance is comprehensively studied. In superstrate device configuration, CSS-based Sb2Se3 solar cells with NiO HTL showed average improvements in open circuit voltage, short circuit current density and power conversion efficiency of 12%, 41%, and 42%, respectively, over the standard devices. Similarly, using a NiO HTL in TE-based Sb2Se3 devices improved open circuit voltage, short circuit current density and power conversion efficiency by 39%, 68%, and 92%, respectively.

Solution-processed CaMnO3−δ -based all oxide solar cells with high open-circuit voltage

Finding a low-cost, stable solar absorber with suitable optical properties is one of the key aspects in promoting solar cell research. Perovskite-structured ${\mathrm{CaMnO}}_{3}$, composed of earth-abundant elements, is an environmentally friendly multifunctional material especially featuring thermoelectricity and G-type antiferromagnetism. In this paper, we explore the potential of $\mathrm{CaMn}{\mathrm{O}}_{3\text{\ensuremath{-}}\ensuremath{\delta}}$(CMO) as an absorber layer in all oxide solar cells. Solution-processed CMO shows strong light absorption capacity in the wavelength range of 400--750 nm with the estimated optical bandgap of 1.77 eV. First-principles calculations show $d\text{\ensuremath{-}}d$ transitions within the upper Mott-Hubbard bands, and lower Mott-Hubbard bands constitute the electronic bandgap, whereas the $p\text{\ensuremath{-}}d$ transitions between the O $2p$ and Mn $3d$ bands contribute to the optical absorption in the visible region. Furthermore, a gradual increase in the current value was observed under illumination in the photoconductivity measurement. We have designed a CMO absorber-layer-based all oxide solar cell using a conventional mesostructured ${\mathrm{TiO}}_{2}$ photo-anode and NiO hole transport layer (HTL). The suitable band alignment of the CMO absorber with both ${\mathrm{TiO}}_{2}$ and NiO enables us to achieve an average open-circuit voltage $({V}_{\mathrm{OC}})$ of 0.92 V with the maximum value of 1.03 V, which is among the highest reported values so far for oxide-based solar cells. Solar cell parameters were also validated using simulations. Our results add a direction in the search for low-cost, stable solar absorber materials.

A novel strategy for enhancing photoelectrochemical performance of Ca2Fe2O5 photocathodes: An integrated experimental and DFT-based approach

Using a wet chemical approach, high-density Ca2Fe2O5 (CFO) nanoflakes were successfully synthesized on a NiO/FTO layer that is an effective hole transport layer (HTL). We found that a two-step annealing strategy could further increase the photoelectrochemical (PEC) efficiency of CFO photocathodes. It was elucidated that two-step annealing was beneficial in various aspects such as morphology, chemical state, optical properties, and impedance. In addition, the NiO HTL further improved the charge transport properties. The CFO on NiO HTL fabricated via two-step annealing demonstrates a photocurrent density of up to −313.7 µA/cm2, which is 76 % higher than that of the HTL-free CFO fabricated via single-step annealing. Through DFT calculations, it is revealed that the increase in the concentration of oxygen vacancies at the CFO surface, which was obtained by the two-step annealing process, is beneficial for lowering the relative energy throughout the hydrogen evolution reaction.

Modulating defect density of NiO hole transport layer via tuning interfacial oxygen stoichiometry in perovskite solar cells

The role of oxygen stoichiometry towards the surface properties of NiOx and its influence over perovskite film morphology, band alignment and charge extraction at NiOx/MAPbI3 interface in inverted perovskite solar cells (PSCs) is analyzed. The oxygen stoichiometry was systematically tuned via thermal treatment of NiOx film in oxygen-rich (o- NiOx) and oxygen-deficient (r- NiOx) atmospheres. These processing conditions impact the defect density and conductivity of NiOx films and thus on the rates of surface recombination, the power conversion efficiency (PCE) and the device stability. We note that the PSCs with r- NiOx show a 20% improvement in PCE in comparison to o- NiOx counterparts. Room-temperature stability measurements for a period of several months demonstrates that the r- NiOx/MAPbI3 interface prolongs the device stability and retains 95% of its initial PCE, whereas a higher defect density due to the presence of excess oxygen at the o- NiOx/perovskite interface leads to faster degradation.

Steering Interface Dipoles for Bright and Efficient All-Inorganic Quantum Dot Based Light-Emitting Diodes.

The state-of-the-art quantum dot (QD) based light-emitting diodes (QD-LEDs) reach near-unity internal quantum efficiency thanks to organic materials used for efficient hole transportation within the devices. However, toward high-current-density LEDs, such as augmented reality, virtual reality, and head-up display, thermal vulnerability of organic components often results in device instability or breakdown. The adoption of a thermally robust inorganic hole transport layer (HTL), such as NiO, becomes a promising alternative, but the large energy offset between the NiO HTL and the QD emissive layer impedes the efficient operation of QD-LEDs. Here, we demonstrate bright and stable all-inorganic QD-LEDs by steering the orientation of molecular dipoles at the surfaces of both the NiO HTL and QDs. We show that the molecular dipoles not only induce the vacuum level shift that helps alleviate the energy offset between the NiO HTL and QDs but also passivate the surface trap states of the NiO HTL that act as nonradiative recombination centers. With the facilitated hole injection into QDs and suppressed electron leakage toward trap sites in the NiO HTL, we achieve all-inorganic QD-LEDs with high external quantum efficiency (6.5% at peak) and brightness (peak luminance exceeding 77 000 cd/m2) along with prolonged operational stability. The approaches and results in the present study provide the design principles for high-performance all-inorganic QD-LEDs suited for next-generation light sources.

Enhanced solar water splitting using plasmon-induced resonance energy transfer and unidirectional charge carrier transport.

Solar water splitting by photoelectrochemical (PEC) reactions is promising for hydrogen production. The gold nanoparticles (AuNPs) are often applied to promote the visible response of wideband photocatalysts. However, in a typical TiO2/AuNPs structure, the opposite transfer direction of excited electrons between AuNPs and TiO2 under visible light and UV light severely limits the solar PEC performance. Here we present a unique Pt/TiO2/Cu2O/NiO/AuNPs photocathode, in which the NiO hole transport layer (HTL) is inserted between AuNPs and Cu2O to achieve unidirectional transport of charge carriers and prominent plasmon-induced resonance energy transfer (PIRET) between AuNPs and Cu2O. The measured applied bias photon-to-current efficiency and the hydrogen production rate under AM 1.5G illumination can reach 1.5% and 16.4 μmol·cm-2·h-1, respectively. This work is original in using the NiO film as the PIRET spacer and provides a promising photoelectrode for energy-efficient solar water splitting.

Design and simulation of a high-performance CH3NH3Pb(I1–xClx)3-based perovskite solar cell using a CeOx electron transport layer and NiO hole transport layer

Herein, a novel planar heterostructure (ITO/CeOx/CH3NH3Pb(I1–xClx)3/NiO/Au) of a CH3NH3Pb(I1–xClx)3-based perovskite solar cell has been designed and numerically investigated. CH3NH3Pb(I1–xClx)3 has been introduced as an absorber layer due to its excellent thermal stability and high carrier diffusion length. Inorganic CeOx and NiO have been introduced as an electron transport layer (ETL) and hole transport layer (HTL), respectively, as their role in the enhancement of efficiency and stability of other perovskite-based solar cells has already been proven. The influences of different physical parameters of the CH3NH3Pb(I1–xClx)3 absorber layer, NiO HTL, and CeOx ETL on the device performance have been explored. The investigated results indicate that the thickness and carrier concentration of the CH3NH3Pb(I1–xClx)3 has a massive impact on solar cell performance. A considerable impact of the carrier concentration of the CeOx and NiO on device performance has also been observed. The role of CH3NH3Pb(I1–xClx)3-layer deep-level defects, CeOx/CH3NH3Pb(I1–xClx)3 interface defects, series resistance, and back contact work functionon solar cell performance were also studied. The optimized solar cell exhibited a power conversion efficiency of 26.05% with open-circuit voltage (V OC), short-circuit current density (J SC), and fill factor of 1.082 V, 29.41 mA cm−2, and 81.85%, respectively. This research indicates that the designed heterostructure of solar cells may appear as a viable alternative to manufacturing CH3NH3Pb(I1–xClx)3 high-performance perovskites.

Effects of double heat treatment of NiO hole transport layer on the performance of QLEDs

Parameters affecting the performance of QLED devices using NiO hole transport layer (HTL) thin film via the sol–gel process route were investigated. In the preparation of the NiO HTL thin film, a double heat treatment scheme, crystallization heat treatment at elevated temperatures followed by vacuum annealing treatment at lower temperatures, was introduced to form a crystalline NiO single phase as well as surface phases with reduced defect concentration. The decoupling of crystallization and vacuum annealing treatment of NiO HTL thin film was effective in enhancing the performance of the QLEDs. Also, the insertion of an interlayer between QD EML and NiO HTL was very effective in enhancing the performance of the device. With the modification of processing conditions, the luminance of QLED with the NiO HTL was improved from 30 to 11500 cd/m2 and the current efficiency from 0.25 to 23 cd/A, respectively.

Understanding the efficacy of electron and hole transport layers in realizing efficient chromium doped BiFeO3 ferroelectric photovoltaic devices

In this work, we report the fabrication of Pt/i-n/ITO, Pt/p-i/ITO, and Pt/p–i–n/ITO heterojunction photovoltaic (PV) devices, where i is the lead-free 2% Cr doped BiFeO3 (BFCrO) ferroelectric, n is the WS2 electron transport layer (ETL), p is the NiO hole transport layer (HTL), and Pt and ITO are the top and bottom electrodes, respectively. In the tandem structure, the materials bandgaps were increased from anode to cathode side; hence the device could absorb the maximum solar light. The electrical performance parameters were compared for all the above-mentioned devices. The p-i-n device yielded an open-circuit voltage (VOC) and a short-circuit current density (JSC) of 0.60 V and 0.76 mA·cm−2, respectively, which leads to the improvement in an efficiency of about 70% as compared to the other two heterojunctions. The two depletion regions formed in the p-i-n heterostructure provide the necessary force to drive the carrier separation, which was confirmed through the electrochemical impedance spectroscopy. A band-diagram has been projected to understand the device operation mechanism. To reduce the structural defects in WS2 and further improve the PV performance parameters in p-i-n devices, sulfur passivation has been performed on the WS2 films. This process offered significant carrier extraction properties than the unpassivated one. The electrical performances for both the passivated and unpassivated devices were compared to elucidate the impact of sulfur passivation. Surprisingly, both the VOC and JSC were improved in the passivated devices, and the efficiency was remarkably increased to an additional 70% as compared to the unpassivated one.

Enhancing the open circuit voltage of the SnS based heterojunction solar cell using NiO HTL

In this article, the numerical investigations on a novel (ITO/CeO2/SnS/NiO/Mo) heterostructure of the SnS-based solar cell have been presented using SCAPS-1D simulation software. The main objective of the study was the exploration of the effect of NiO hole transport layer (HTL) on the performance of the proposed SnS-based heterojunction solar cell. The open circuit voltage of the proposed cell has been enhanced up to 345 mV after using NiO HTL which indicates a significant reduction of surface recombination velocity at SnS/electrode interface. Around 12.78% efficiency enhancement was observed after using NiO HTL in the SnS-based heterojunction solar cell, and an efficiency of 25.1% could be obtained from the proposed heterojunction solar cell. It was found that the cell performance depended on the carrier concentration and thickness of the CeO2 electron transport layer (ETL), SnS absorber layer, and NiO HTL, respectively. The effects of deep level defect density of the SnS absorber layer and interface defect density of NiO/SnS and CeO2/SnS on the cell performance ware also studied. These findings reveal that the NiO could be a promising HTL for the fabrication of low cost, high-efficiency SnS-based heterojunction solar cell.

Metal organic framework–derived core-shell CuO@NiO nanosphares as hole transport material in perovskite solar cell

Cu-Ni bimetallic organic frameworks were synthesized by a facile and stepwise solvothermal method, utilizing metal organic framework as precursor. Core-shell CuO@NiO nanospheres were obtained by calcining the bimetallic organic frameworks at 400° C in the air atmosphere. NiO nanospheres were also prepared by calcining the Ni-BTC nanoparticles in the same conditions. Core-shell CuO@NiO and NiO nanoparticles synthesized by this procedure were employed in fabrication of perovskite solar cells (PSCs) as hole transport layer (HTL). In comparison with the performance of the NiO HTL–based PSC, device with core-shell CuO@NiO HTL exhibited a greater photon conversion efficiency 10.11% with a current density of 21.80 mA cm−2, an open-circuit voltage of 0.91 V, and a fill factor of 0.51, which is about 15% higher than that of the PSC with NiO HTL (8.58%). The excellent performance of PSC based on core-shell CuO@NiO HTL is mainly attributed to the high extraction of charge carrier due to favorable energy level alignment between perovskite and hole transport layer, increase in HTL conductivity, and decrease of defect density in the surface and bulk of HTL. The stability test of devices showed outstanding long-term stability for the inorganic HTL-based PSCs. The devices with NiO and CuO@NiO HTLs maintained more than 52% and 60% of their original efficiency after 1920 h (80 days), respectively. In contrast, the cell with spiro-OMeTAD retained only 31.74% of its initial efficiency under the same storage conditions after 1248 h (52 days).

Flame Assisted Chemical Vapour Deposition of NiO hole transport layers for planar perovskite cells

Thin films of polycrystalline NiO were deposited by Flame Assisted Chemical Vapour Deposition, which is an ideal process for in-line, atmospheric pressure deposition of wide area coatings. This, along with the ability to use aqueous salts rather than organic precursors or solvents makes it well suited for industrial integration. To establish the capability of FACVD deposited NiO for use as a low cost, commercially viable option planar perovskite cells were fabricated under ambient conditions. The resulting cells showed the importance of both the flame composition and NiO thickness. A continuous NiO Hole Transport Layer (HTL) was achieved for ca. 36 nm thick film, which showed a maximum higher efficiency of 12.3% over that of the control (11.8%) which used a spin coated HTL. This was mainly driven by the large improvement in the current density from 16.6 mA/cm2 to 19.0 mA/cm2.

High performance perovskite solar cells using multiple hole transport layer and modulated FAxMA1−xPbI3 active layer

NiO layer and NiO/Ag/NiO triple layers were respectively deposited on indium-tin-oxide-coated glass substrates as the hole transport layers of MAPbI3 and FAxMA1−xPbI3 perovskite solar cells using a radio frequency magnetron sputtering system. Compared with the 60-nm-thick NiO hole transport layer with an average transmission of 66.8% between the wavelength range from 300 to 800 nm, the average transmission was improved to 70.4% for the NiO/Ag/NiO (30/7/30 nm) hole transport layer. Consequently, the power conversion efficiency of MAPbI3 perovskite solar cells using the NiO/Ag/NiO (30/7/30 nm) hole transport layer was improved from 11.02 to 11.68%. To broaden light absorption, various FAxMA1−xPbI3 active layers were obtained by blending various formamidine iodide (FAI) contents with methylammonium iodide (MAI). The power conversion efficiency of the FA0.1MA0.9PbI3 perovskite solar cells using 60-nm-thick NiO hole transport layer was improved to 12.30%. By integrating the optimal FA0.1MA0.9PbI3 active layer and the optimal NiO/Ag/NiO (30/7/30 nm) hole transport layer, the power conversion efficiency of the resulting perovskite solar cells was further improved to 12.67%.

Consistently High Voc Values in p-i-n Type Perovskite Solar Cells Using Ni3+-Doped NiO Nanomesh as the Hole Transporting Layer.

Leading edge p-i-n type halide perovskite solar cells (PSCs) severely underperform n-i-p PSCs. p-i-n type PSCs that use PEDOT:PSS hole transport layers (HTLs) struggle to generate open-circuit photovoltage values higher than 1 V. NiO HTLs have shown greater promise in achieving high Voc values albeit inconsistently. In this report, a NiO nanomesh with Ni3+ defect grown by the hydrothermal method was used to obtain PSCs with Voc values that consistently exceeded 1.10 V (champion Voc = 1.14 V). A champion device photoconversion efficiency of 17.75% was observed. Density functional theory modeling was used to understand the interfacial properties of the NiO/perovskite interface. The PCE of PSCs constructed using the Ni3+-doped NiO nanomesh HTL was ∼34% higher than that of conventional compact NiO-based perovskite solar cells. A suite of characterization techniques such as transmission electron microscopy, field emission scanning electron microscopy, intensity-modulated photocurrent spectroscopy, intensity-modulated photovoltage spectroscopy, time-resolved photoluminescence, steady-state photoluminescence, and Kelvin probe force microscopy provided evidence of better film quality, enhanced charge transfer, and suppressed charge recombination in PSCs based on hydrothermally grown NiO nanostructures.

Improving the performance of perovskite solar cells by surface passivation

Abstract NiO has a perfect-aligned energy level with CH3NH3PbI3 perovskite such that it serves as a hole transport layer (HTL), but NiO-based perovskite solar cells (PSCs) still suffer from low efficiency due to the poor interface contact between the perovskite layer and the NiO HTL, and haphazardly stacked perovskite grains. Herein, poly[(9,9­dioctylfluorenyl­2,7-diyl)-alt-co-(1,4-benzo-{2,1′,3}-thiadiazole)] (PFBT) is introduced between the NiO and perovskite layers in the form of a polymer aggregate to enhance perovskite crystallinity and decrease the interface charge recombination between perovskite and NiO in PSCs, resulting in an improved performance. Moreover, PFBT modified perovskite films showed sharper, smoother, and more compact crystalline grains with fewer grain boundaries, leading to the decreased nonradiative recombination. This study offers a simple strategy to achieve highly efficient PSCs with the incorporation of polymer semiconductor aggregates to passivate the interface between the perovskite and NiO layers.