Nickel Ion Implantation Research Articles

On the SRIM prediction of ranges for Ni ions.

An experiment to determine the range of Ni ions in matter consisting in the implantation of nickel ions into samples followed by the determination of the depth profile of the implanted ions by nuclear reaction resonance profiling was performed. The experimentally obtained ranges for Ni ions in Fe and Mo were compared with SRIM-2013 (www.srim.org) and TRIM-98 predictions. It was found that the ranges predicted by SRIM-2013 are significantly overestimated whereas the calculation results obtained with TRIM-98 modified to take into account radiation-enhanced diffusion are consistent with the experimental data.

Optical and magnetic properties in well and barrier ZnS waveguides formed by MeV Ni and Cu ion implantation

Well and barrier waveguides were fabricated in zinc sulfide (ZnS) single crystals via nickel (Ni) and copper (Cu) ion implantation. Elastic collisions between the implanted ions and target nuclei were reconstructed using SRIM software. The prism coupling and end-face coupling methods were applied to capture the dark-mode spectrum and near-field intensity distributions, respectively, at 633 nm. The absorption spectra from the UV to visible band of the ZnS crystals before and after Ni and Cu ion implantation were collected on a spectrophotometer. Magnetic properties at room temperature were evaluated under a magnetic field of 3T.

Effect of Sequential Helium and Nickel Ion Implantation on the Nano-Indentation Hardness of X750 Alloy

Abstract Sequential He+ and Ni+ implantations were performed to investigate their combined effect on the indentation hardness of heat-treated X750 alloy. The microstructure of the ion-implanted region was also characterized with transmission electron microscope (TEM). The X750 alloy displayed a pronounced softening with very low Ni+ implantation levels, ψ = 0.01–1.0 dpa, however it showed a clear increase in hardness when implanted with He+ up to CHe = 5000 appm. Samples subjected to sequential He+ and Ni+ implantations displayed hardness values between those presented by sole He+ or Ni+ implantation suggesting that the effects of ion-induced microstructural damage and helium accumulation on the hardness of this alloy can be considered as independent and additive over the range of conditions studied. This observation is in contradiction to previously reported TEM-based studies, which suggest that accumulated helium slows the dissolution/disordering of the γ′ hardening phase in this alloy. In our study, established theories were applied to assess the contribution of ion-induced defect clustering, γ′ precipitate disordering, and helium bubble accumulation to the hardness of the X750 alloy. It was observed that generation of ion-induced defect clusters and the formation of helium bubbles increased the indentation hardness slightly while the disordering of γ′ precipitates resulted in a dramatic decrease in the total hardness. Ni+ and He+ implantation also had different effects on the depth dependence of the indentation hardness indentation size effect (ISE). The ISE was pronounced in the samples subjected to only Ni+ implantation while it was almost absent in samples subjected to only He+ implantation.

Nickel ion implantation effects on DC magnetron sputtered ZnO film prepared on Si (100)

Abstract This paper presents structural, optical and electrical properties of nickel ion (Ni+) implanted ZnO film at different fluences. The ZnO films were grown on Si (100) using DC magnetron sputtering of pure zinc target at room temperature. The Ni+ of energy 300 keV were implanted in the films at various fluences of 1.8 × 1012, 1.8 × 1013, 5.6 × 1013 and 1.1 × 1014 ions/cm2 by Pelletron Accelrator. The ZnO films were found to be preferably oriented along (002) plane as indicated by the x-ray diffraction analysis. The Ni+ implantation in ZnO up to 1.8 × 1013 ions/cm2 caused a decrease in the film's crystallinity, however, the crystallinity of the film was improved with further increase in the ion fluence. The surface morphology results revealed beans-shaped granular structure of ZnO that became prominent after ion implantation at lower ion fluence. The energy dispersive x-ray spectroscopy validated an increase in the nickel contents with increase of ion fluence. The ultraviolet–visible (UV–vis) reflectance spectroscopy depicted an increase in the film's band gap from 3.37 eV to 3.49 eV after Ni+ implantation up to the fluence of 1.8 × 1013 ions/cm2. However, the band gap was decreased with further increase in the fluence. The electrical resistivity of the film was measured using four probe technique. The resistivity was decreased from 952 to 68 Ω-cm after Ni+ implantation up to 5.6 × 1013 ions/cm2. However, at higher fluence (1.1 × 1014 ions/cm2), the resistivity was significantly increased.

Improvement in corrosion resistance of CrN coatings

The effects of nickel ion implantation on surface structure as well as resistance against corrosion for CrN coatings deposited by arc ion plating are investigated. The objective of this work is to optimize the deposition condition for the best corrosion resistance. In this experiment, nickel ions with energy of 20 keV were implanted into CrN coatings by doses from 1 × 1017 to 1 × 1018 ions/cm2. X-ray diffraction analysis was applied for both the metallic analysis and the study of new structures created during the implantation. Atomic force microscopy and corrosion analysis were utilized to compare the roughness and the corrosion resistance prior to and after the implantation, respectively. The results indicate that nickel ion implantation can greatly improve the resistance against corrosion. After the corrosion test, the surface morphology and composition of the coatings were examined by the scanning electron microscopy with an energy dispersive spectroscopy, which confirmed the existence of the implanted nickel in the coatings.

Synthesis of magnetic nanoparticles by low-energy dual ion implantation of iron and nickel into silicon dioxide followed by electron beam annealing

Magnetic nanoparticles have been made by low-energy dual ion implantation of iron and nickel into SiO2 with a nickel fluence ratio of 82% followed by electron beam annealing for 1800 s at 1000°C. After annealing, there is significant diffusion of iron and nickel into the silicon dioxide layer. Annealing also led to the formation of superparamagnetic nanoparticles with a narrow particle size distribution. The saturation moment at 5 K was 0.7 µB and a similar value was observed at 300 K, which indicates that the Curie temperature is far above room temperature. This moment is lower than that expected for Ni0.82Fe0.18. While the results clearly show the formation of superparamagnetic nanoparticles, it is not possible to determine whether nickel-iron, iron or nickel has formed.

Improving Corrosion Resistance of a Nickel-Aluminum Bronze Alloy via Nickel Ion Implantation

An as-cast nickel-aluminum bronze alloy was subjected to nickel ion implantation, modifying its surface structure. A nickel-rich layer was formed on the surface of the alloy and its corrosion resistance in salt spray environment was improved gradually with the increasing implantation fluence. The corrosion resistance enhancement after ion implantation is believed to stem from the more compact Cu2O film with the incorporation of nickel ions. Under the protection of this more compact film, selective phase corrosion was inhibited effectively.

SIMS and TEM investigation of hydrogen trapping on implantation defects in a nickel-based superalloy

This study aims at characterizing the interactions of hydrogen with point defects and their clusters in nickel-based superalloys. For this, nickel ion implantation was used to create defects in the sub-surface of alloy 690 coupons. The interaction of hydrogen with these defects was studied thanks to SIMS depth profile analysis performed after deuterium cathodic charging, and different annealing treatment. In parallel, TEM observations were carried out in order to qualify and quantify the defects responsible for the trapping, and to observe their evolution in the presence of hydrogen. All the results exhibit a strong interaction of hydrogen with implantation-defects, up to high temperatures (325 °C). Also, hydrogen is shown to assist defects reorganisation, in a way similar to the effect of temperature. The effect of hydrogen on the alloy atoms as explored by SIMS, combined with the TEM investigation of defects evolution in the presence of hydrogen, allows to suggest that the main mechanism for hydrogen-assisted motion of defects is by lowering the lattice friction, thus decreasing the activation volume for the unfaulting or motion of point defect clusters, up to dislocation loops.

Formation of color centers in nanodiamonds by plasma assisted diffusion of impurities from the growth substrate

A technique to create nickel-related single color centers in individual nanodiamonds is demonstrated. The method involves implantation of nickel ions into a substrate onto which the diamond nanocrystals are subsequently grown by chemical vapor deposition. The nickel is transported during the growth from the implanted substrate to the plasma and incorporates itself into the growing nanodiamonds. The nanodiamonds grown by this method reveal narrow photoluminescence peaks and proved to be single photon emitters. The results demonstrate a significant advance in the control of nickel-related color centers in diamond which are core candidates for quantum information processing.

Role of tantalum and nickel ion implantation on corrosion resistance properties of a Ti–Al–Zr alloy

Electrochemical behavior of Ti–Al–Zr implanted with nickel and tantalum ions and a co-implantation of them was investigated as a function of fluences. The polarization curves of the un-implanted and implanted Ti–Al–Zr were potentiodynamically measured in a hydrochloric acid solution. Electrochemical measurements revealed that nickel ion implantation significantly promoted the passivation of Ti–Al–Zr with an increase of fluence and the corrosion potentials resided in the passive region at fluences above 1 × 10 16 ions/cm 2. Tantalum ion implantation was effective in reducing the anodic current densities in the active and passive regions as fluences increased. On the other hand, the polarization curves of the co-implanted Ti–Al–Zr exhibited more stable passive behavior with low current densities. It was concluded that an excellent corrosion resistance of Ti–Al–Zr was achieved by complementary effects of nickel and tantalum ions co-implantation.

The improved corrosion resistance of anodic films on aluminum by nickel ions implantation

The influence of nickel ions implantation on the corrosion resistance of porous anodic films on aluminum was studied. Nickel ions were implanted into anodic films on 1070 aluminum using a MEVVA source at an energy of 40 keV with doses of 1.0×1017 and 5.0×1017 ions/cm2, respectively. Atomic force microscope (AFM) observations showed that the implantation of nickel ions made the surface structure of the anodic films more uniform. XPS analysis revealed that nickel is present in the states of metallic nickel and NiO on the surface of the anodic film. Electrochemical tests showed that anodic films with nickel ion implantation provided relatively higher corrosion resistance both in acidic and in basic solutions. Nickel ion implantation mainly affects the property of porous layer, which is characterized by the capacitance Cp and the resistance Rp. After nickel ions implantation, Rp values increased and Cp values decreased, which shows a more difficult penetration of the aggressive electrolyte into the anodic film. The concentration of nickel and formation of NiO on the surface of anodic film, which block the pores in the film, should be the main reason for better corrosion resistance of the implanted samples.

Influence of nickel ion implantation on the inactive braze joining abilities of Al 2O 3 ceramics

Multi-crystalline Al 2O 3 ceramics were implanted with 130 keV Ni + ion beams at 225 °C in a vacuum of 1.33 × 10 −3 Pa. The inactive braze joining abilities of the implanted ceramic to 1Cr18Ni9Ti (AISI 321) stainless steel with Ag 34Cu 16Zn 50 (wt%) brazing material were investigated. The relationships between the joining abilities and the surface compressive stresses produced by the ion implantation were studied for the first time. The results showed that when the fluence was less than 5 × 10 16 ions/cm 2, the surface properties including wetting ability, braze joining ability and produced surface compressive stresses, increased with ion implantation fluence, and reached the maximum value at a point of 5 × 10 16 ions/cm 2. After this point, the properties decreased upon further increasing the ion implantation fluence.

Magnetic nanoscale aggregates of cobalt and nickel in MgO single crystals

The magnetic properties of Co and Ni nanosized aggregates formed after implantation of nickel and cobalt ions in magnesium oxide single crystals were investigated. The influence of the implantation energy and annealing treatments was characterized. The particle size distribution was determined from the combined analysis of the magnetic moment dependence on both magnetic field and temperature, and used to determine the magnetic anisotropy constant of the aggregates. The results for nickel aggregates indicate the presence of an antiferromagnetic layer after the annealing treatments.

Effect of Ni Ion Implantation on Corrosion Behavior of Zircaloy-4 in 0.5 M H 2 SO 4

In order to study the effect of nickel ion implantation on aqueous corrosion behavior, samples of Zircaloy-4 were implanted with nickel ions with fluences ranging from to using a metal vapor vacuum arc source operated at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface of the samples were analyzed by X-ray photoelectron spectroscopy and Auger electron spectroscopy, respectively. Transmission electron microscopy was used to examine the microstructure of the nickel-implanted samples. The potentiodynamic polarization measurement was employed to evaluate the aqueous corrosion resistance of Zircaloy-4 in a 0.5 M solution. It was found that significant improvement was achieved in the aqueous corrosion resistance when the fluence is For fluences greater than the corrosion resistance of the implanted zirconium decreased compared with that of as-received Zircaloy-4; the higher the fluence, the worse the corrosion resistance. The mechanism of the corrosion behavior of the nickel-implanted Zircaloy-4 is discussed. © 2004 The Electrochemical Society. All rights reserved.

Corrosion behavior in 1 N H 2SO 4 of zirconium ion implanted with nickel

In order to study the effect of nickel ion implantation on the aqueous corrosion behavior, specimens of zirconium were implanted by nickel ions with doses ranging from 1×10 16 to 5×10 17 ions/cm 2, using a MEVVA source at an extraction voltage of 40 kV. The valence states and depth distribution of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES), respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine the micro-morphology and microstructure of the nickel-implanted samples. Potentiodynamic polarization measurements were employed to evaluate the aqueous corrosion resistance of the zirconium in a 1 N H 2SO 4 solution. In the first sweep polarization, the passive current densities at dose of 1×10 16 and 5×10 16 ions/cm 2 are lower than that of as received zirconium. While in the third sweep polarization, the passive current densities of all the implanted samples are higher than that of as received zirconium. Finally, the mechanism of the corrosion behavior of the nickel-implanted zirconium is discussed.

Electrocatalytic behaviour of titanium implanted with nickel and molybdenum ions

The electrocatalytic activity of titanium induced by ion implantation has been investigated. Ion implantation was carried out using a metal vapour vacuum arc source ion implanter at room temperature. Nickel ion implantation was followed by molybdenum ion implantation at doses ranging from 1 × 1016 to 1 × 1017 ions/cm2 at the same average extracting voltage of 45 kV. The concentration profiles of Ni and Mo ions in the near surface were detected by electron probe microanalysis and X-ray photoelectron spectroscopy. The catalytic behaviour of implanted titanium was determined by an electrochemical method. Potential versus current density curves for the cathodic hydrogen evolution reaction indicated that Ni and Mo ions implanted into titanium electrodes resulted in a low hydrogen overvoltage of 110-180 mV (at a current density of 200-400 mA cm-2 in 30 wt-%KOH at 25°C) and excellent stability. The electrocatalytic activity induced by ion implantation can be explained provisionally by interactions between Ni and Mo ions and the titanium substrate.

Effects of stress on electrical transport properties of nickel silicide thin layers synthesized by Ni-ion implantation

Nickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 3×1017 cm−2. The as-implanted and annealed samples were characterized by using Rutherford backscattering spectrometry, x-ray diffraction, micro-Raman spectroscopy, electrical resistivity, and Hall-effect measurements. Residual stress in the NiSi2 layers was determined using the sin2 ψ method of x-ray diffraction, assuming that a biaxial stress state exists in the layers and that the elastic properties of the layers are isotropic. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample, depending on the preparation conditions. However, after annealing, the differences between samples seemed to have diminished in that they all showed similar shapes in both the sheet resistivity versus temperature and the Hall mobility versus temperature curves. It was also shown that the electrical transport properties were highly correlated with the stress in the layers.

Electrical transport properties of NiSi2 layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model

Nickel disilicide (NiSi2) layers were synthesized by nickel ion implantation into silicon substrates using a metal vapor vacuum-arc ion source. The electrical transport properties were studied before and after annealing using sheet resistivity and Hall effect measurements from 30 to 400 K, and the results showed surprising features very different from those generally reported NiSi2 layers. The temperature dependence of sheet resistivity Rs(T) and Hall mobility μH(T) in the as-implanted samples showed peculiar peak and valley features varying from sample to sample, depending on the preparation conditions. However, after annealing, the differences between samples seemed to have diminished in that they all showed similar shapes in both the Rs(T) and the μH(T) curves. A two-band model was proposed to explain the observed electrical transport properties.

Ion Beam Doping of Chlorinated Copper Phthalocyanine Thin Films

Ion beam implantation of energetic nickel, germanium, and tin ions was studied for the purpose of altering the properties of the film structures of chlorinated copper phthalocyanine. Changes in the surface topology, conductivity, electron absorption spectra, and current response to ammonia were shown to be due to both ion bombardment of the samples and the subsequent thermal annealing.

Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

ABSTRACTNickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.