Neutral Charge State Research Articles

High‐Resolution Thermal Sensing Using Temperature‐Sensitive Cathodoluminescence Spectroscopy in Nitrogen‐Doped Nanodiamonds

The evolution of the cathodoluminescence spectra from commercially available nanodiamonds with high density of nitrogen‐vacancy defects has been studied in a large wavelength range, from 200 to 800 nm, and temperatures from 5 to 300 K, in order to achieve a temperature probe with high spatial resolution. The full width at half maximum of the peak associated to the neutral charge state of the NV center has been found to evolve with temperature in a predictable way, although its value may vary from sample to sample. We have attributed this shift to the differences in the nanodiamonds surface chemistry.

Quantum bit with telecom wave-length emission from a simple defect in Si

Defect-related spin-to-photon interfaces in silicon promise the realization of quantum repeaters by combining advanced semiconductor and photonics technologies. Recently, controlled creation/erasure of simple carbon interstitial defects have been successfully realised in silicon. This defect has a stable structure near room temperature and coherently emits in the wave-length where the signal loss is minimal in optical fibres used in communication technologies. Our in-depth theoretical characterization confirms the assignment of the observed emission to the neutral charge state of this defect, as arising due to the recombination of a bound exciton. We also identified a metastable triplet state that could be applied as a quantum memory. Based on the analysis of the electronic structure of the defect and its similarities to a known optically detected magnetic resonance centre in silicon, we propose that a carbon interstitial can act as a quantum bit and may realize a spin-to-photon interface in complementary metal-oxide semiconductor-compatible platforms.

Temperature dependence of the AB lines and optical properties of the carbon–antisite-vacancy pair in 4H−SiC

Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultrabright AB photoluminescence lines in 4H−SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have previously been studied and assigned to the carbon–antisite-vacancy (CAV) pair. In this paper, we report on new measurements of the AB lines’ temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB lines only consist of three nonthermally activated lines instead of the previously reported four lines; meanwhile, our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In light of our results, the identification of AB lines and the associated room-temperature emission require further study. Published by the American Physical Society 2024

Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor.

Controlling the surface diffusion of particles on 2D devices creates opportunities for advancing microscopic processes such as nanoassembly, thin-film growth, and catalysis. Here, we demonstrate the ability to control the diffusion of F4TCNQ molecules at the surface of clean graphene field-effect transistors (FETs) via electrostatic gating. Tuning the back-gate voltage (VG) of a graphene FET switches molecular adsorbates between negative and neutral charge states, leading to dramatic changes in their diffusion properties. Scanning tunneling microscopy measurements reveal that the diffusivity of neutral molecules decreases rapidly with a decreasing VG and involves rotational diffusion processes. The molecular diffusivity of negatively charged molecules, on the other hand, remains nearly constant over a wide range of applied VG values and is dominated by purely translational processes. First-principles density functional theory calculations confirm that the energy landscapes experienced by neutral vs charged molecules lead to diffusion behavior consistent with experiment. Gate-tunability of the diffusion barrier for F4TCNQ molecules on graphene enables graphene FETs to act as diffusion switches.

Characterization of Electrospray Ionization Complexity in Untargeted Metabolomic Studies.

The annotation of metabolites detected in LC-MS-based untargeted metabolomics studies routinely applies accurate m/z of the intact metabolite (MS1) as well as chromatographic retention time and MS/MS data. Electrospray ionization and transfer of ions through the mass spectrometer can result in the generation of multiple "features" derived from the same metabolite with different m/z values but the same retention time. The complexity of the different charged and neutral adducts, in-source fragments, and charge states has not been previously and deeply characterized. In this paper, we report the first large-scale characterization using publicly available data sets derived from different research groups, instrument manufacturers, LC assays, sample types, and ion modes. 271 m/z differences relating to different metabolite feature pairs were reported, and 209 were annotated. The results show a wide range of different features being observed with only a core 32 m/z differences reported in >50% of the data sets investigated. There were no patterns reporting specific m/z differences that were observed in relation to ion mode, instrument manufacturer, LC assay type, and mammalian sample type, although some m/z differences were related to study group (mammal, microbe, plant) and mobile phase composition. The results provide the metabolomics community with recommendations of adducts, in-source fragments, and charge states to apply in metabolite annotation workflows.

Comparative analysis of surface phase diagrams in aqueous environment: Implicit vs explicit solvation models.

Identifying the stable surface phases under a given electrochemical conditions serves as the basis for studying the atomistic mechanism of reactions at solid/water interfaces. In this work, we systematically compare the performance of the two main approaches that are used to capture the impact of an aqueous environment, implicit and explicit solvent, on surface energies and phase diagrams. As a model system, we consider the magnesium/water interface with (i) Ca substitution and (ii) proton and hydroxyl adsorption. We show that while the implicit solvent model is computationally very efficient, it suffers from two shortcomings. First, the choice of the implicit solvent parameters significantly influences the energy landscape in the vicinity of the surface. The default parameters benchmarked on solvation in water underestimate the energy of the dissolved Mg ion and lead to spontaneous dissolution of the surface atom, resulting in large differences in the surface energetics. Second, in systems containing a charged surface and a solvated ion, the implicit solvent model may not converge to the energetically stable ionic charge state but remain in a high-energy metastable configuration, representing the neutral charge state of the ion. When these two issues are addressed, surface phase diagrams that closely match the explicit water results can be obtained. This makes the implicit solvent model highly attractive as a computationally-efficient surrogate model to compute surface energies and phase diagrams.

Bistability between π-diradical open-shell and closed-shell states in indeno[1,2-a]fluorene.

Indenofluorenes are non-benzenoid conjugated hydrocarbons that have received great interest owing to their unusual electronic structure and potential applications in nonlinear optics and photovoltaics. Here we report the generation of unsubstituted indeno[1,2-a]fluorene on various surfaces by the cleavage of two C-H bonds in 7,12-dihydroindeno[1,2-a]fluorene through voltage pulses applied by the tip of a combined scanning tunnelling microscope and atomic force microscope. On bilayer NaCl on Au(111), indeno[1,2-a]fluorene is in the neutral charge state, but it exhibits charge bistability between neutral and anionic states on the lower-workfunction surfaces of bilayer NaCl on Ag(111) and Cu(111). In the neutral state, indeno[1,2-a]fluorene exhibits one of two ground states: an open-shell π-diradical state, predicted to be a triplet by density functional and multireference many-body perturbation theory calculations, or a closed-shell state with a para-quinodimethane moiety in the as-indacene core. We observe switching between open- and closed-shell states of a single molecule by changing its adsorption site on NaCl.

Analysis of the 3.2–3.3 μm Interstellar Absorption Feature on Three Milky Way Sightlines

We report new analyses of spectra of the 3.2–3.3 μm absorption feature observed in the diffuse interstellar medium toward three Milky Way sources: 2MASS J17470898 − 2829561 (2M1747) and the Quintuplet Cluster, both located in the Galactic center, and Cygnus OB2-12. The 3.2–3.3 μm interval coincides with the CH-stretching region for compact polycyclic aromatic hydrocarbons (PAHs). We focus on the 2M1747 spectrum. Its published optical depth spectrum contains residual telluric transmission features, which arise from the 0.06 difference in mean airmasses between the observations of the source and its telluric standard star. We corrected the published spectrum by adding the airmass residual optical depth spectrum. The corrected spectrum is well fit by a superposition of four Gaussians. The absorption spectra of the other two sources were also fit by four Gaussians, with similar central wavelengths, widths, and relative peak opacities. We associate the three longer wavelength Gaussians covering the 3.23–3.31 μm interval with compact PAHs in positive, neutral, and negative charge states. We identify the shortest-wavelength Gaussian, near 3.21 μm, with irregularly shaped PAHs. Constraints imposed by spectral smoothness on the corrected 2M1747 spectrum, augmented by a PAH cluster formation model for post-asymptotic giant branch stars, suggests that >99% of the PAHs in the diffuse interstellar medium reside in small clusters. This study supports the PAH hypothesis, and it suggests that a family of primarily compact PAHs with a C66H20 (circumvalene) parent is consistent with the observed mid-infrared and ultraviolet interstellar absorption spectrum.

A Device Model for Achieving Sizable and Tunable Tunneling Magnetoresistance Using Two‐Dimensional Materials InX (X = O, Se) without Hetero‐Interface

AbstractThe two‐dimensional (2D) materials InX (X = O, Se), experimentally available thus far, can become a ferromagnetic half metal under hole doping, though the charge neutral states of them are nonmagnetic semiconductors. Based on such an electronic characteristic, a theoretical model of magnetic tunnel junction (MTJ) is proposed composed only of one of the 2D InX. In doing so, the two semi‐infinite pieces of 2D InX in the half‐metallic state is assumed as the opposite electrodes which are separated by a strip of the same material but in its nonmagnetic state. Owing to the 2D nature of InX, the half metal electrodes of the InX device induced by hole doping can be achieved by using split gating technique. The numerical simulations identify a proper hole doping concentration, at which 100% tunneling magnetoresistance (TMR) ratios can be realized, accompanying an appreciable conductance of majority spin electron under parallel magnetization configuration. Under a finite bias voltage, the TMR ratio remains high. Therefore, the proposed device model is an ideal candidate for future spintronics applications. It enables electrical control of TMR and circumvents the detriment of hetero‐interface disorder inevitable in conventional MTJs.

Charge Stability and Charge-State-Based Spin Readout of Shallow Nitrogen-Vacancy Centers in Diamond.

Spin-based applications of the negatively charged nitrogen-vacancy (NV) center in diamonds require an efficient spin readout. One approach is the spin-to-charge conversion (SCC), relying on mapping the spin states onto the neutral (NV0) and negative (NV-) charge states followed by a subsequent charge readout. With high charge-state stability, SCC enables extended measurement times, increasing precision and minimizing noise in the readout compared to the commonly used fluorescence detection. Nanoscale sensing applications, however, require shallow NV centers within a few nanometers distance from the surface where surface related effects might degrade the NV charge state. In this article, we investigate the charge state initialization and stability of single NV centers implanted ≈5 nm below the surface of a flat diamond plate. We demonstrate the SCC protocol on four shallow NV centers suitable for nanoscale sensing, obtaining a reduced readout noise of 5-6 times the spin-projection noise limit. We investigate the general applicability of the SCC for shallow NV centers and observe a correlation between the NV charge-state stability and readout noise. Coating the diamond with glycerol improves both the charge initialization and stability. Our results reveal the influence of the surface-related charge environment on the NV charge properties and motivate further investigations to functionalize the diamond surface with glycerol or other materials for charge-state stabilization and efficient spin-state readout of shallow NV centers suitable for nanoscale sensing.

Electronic, mechanical, and vibrational properties of calcium lanthanum sulfide solid solution: A DFT study

The combination of optical and mechanical properties of calcium lanthanum sulfide (CLS) makes it an attractive material for optical applications. CLS is a γ-phase La2S3/CaS solid solution above 50:50 La2S3/CaS. Experiments have characterized the effect of composition on the structural, thermal, and optical properties. However, the effect of impurities and other defects, such as porosity, on resulting properties is difficult to deconvolute. We used the density functional theory (DFT) simulations to characterize the effect of La2S3/CaS relative fractions on structural, electronic, mechanical, and vibrational properties of single crystalline CLS solid solutions. We find a decrease in the stiffness with CaS fraction and confirm the experimentally observed increase in the lattice parameter with La2S3 fraction. We also characterized the point defects, including sulfur vacancies, oxygen substituting sulfur, oxygen, and sulfur impurities on lanthanum sublattice vacant sites, and sulfur substituting calcium (vS, OS, OLa, and SLa, respectively). Our defect studies in 90:10 CLS find the neutral charge state configuration to be energetically favorable for all tested configurations except for the sulfur vacancies (vS).

Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study

Optically active spin defects in semiconductors can serve as spin-to-photon interfaces, key components in quantum technologies. Silicon carbide (SiC) is a promising host of spin defects thanks to its wide bandgap and well-established crystal growth and device technologies. In this study, we investigated the oxygen-vacancy complexes as potential spin defects in SiC by means of ab initio calculations. We found that the OCVSi defect has a substantially low formation energy compared with its counterpart, OSiVC, regardless of the Fermi level position. The OCVSi defect is stable in its neutral charge state with a high-spin ground state (S = 1) within a wide energy range near the midgap energy. The zero-phonon line (ZPL) of the OCVSi0 defect lies in the near-infrared regime, 1.11–1.24 eV (1004–1117 nm). The radiative lifetime for the ZPL transition of the defect in kk configuration is fairly short (12.5 ns). Furthermore, the estimated Debye–Waller factor for the optical transition is 13.4%, indicating a large weight of ZPL in the photoluminescence spectrum. All together, we conclude that the OCVSi0 defect possesses desirable spin and optical properties and thus is potentially attractive as a quantum bit.

Theoretical Study on B-doped FeN4 Catalyst for Potential-Dependent Oxygen Reduction Reaction.

Electrochemical reactions mostly take place at a constant potential, but traditional DFT calculations operate at a neutral charge state. In order to really model experimental conditions, we developed a fixed-potential simulation framework via the iterated optimization and self-consistence of the required Fermi level. The B-doped graphene-based FeN4 sites for oxygen reduction reaction were chosen as the model to evaluate the accuracy of the fixed-potential simulation. The results demonstrate that *OH hydrogenation gets facile while O2 adsorption or hydrogenation becomes thermodynamically unfavorable due to the lower d-band center of Fe atoms in the constant potential state than the neutral charge state. The onset potential of ORR over B-doped FeN4 by performing potential-dependent simulations agree well with experimental findings. This work indicates that the fixed-potential simulation can provide a reasonable and accurate description on electrochemical reactions.

Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions

Control of the charge state of the nitrogen-vacancy (NV) center is crucial because of its instability and its transitions between the negative (NV–) and neutral (NV0) NV charge states under laser irradiation In this study, we fabricated an n-i-n junction, with an i-layer sandwiched between two phosphorus-doped n-layers; then, we measured the charge state of NV centers under steady state and laser irradiation in a known band structure where the Fermi energy changes gradually. The steady-state charge state measured by a nondestructive single shot exhibited stable NV– and NV0 signals when the Fermi level was even slightly above and below the transition level, respectively. This result indicates that the charge state can be significantly stabilized through band engineering. Both charge-state populations were observed only when the Fermi level was close to the transition level. Under continuous green laser irradiation, the ratio of NV– measured by the photoluminescence spectra changed gradually with the Fermi level in the depletion layer because of the balance between excitation from the laser and the supply of charge from the band. This outcome agrees reasonably with the calculated bands. Furthermore, we measured the PL spectra of the ensemble NV centers and discovered that their charge state can be well-controlled, as in the single NV center. The charge state of the i-layer at the interface can be stabilized by depositing a thin n-layer on the surface. These results would contribute significantly to improve sensor performance.

Investigation of oxygen-vacancy complexes in diamond by means of ab initio calculations

Point defects in diamond may act as quantum bits. Recently, oxygen-vacancy related defects have been proposed to the origin of the so-called ST1 color center in diamond that can realize a long-living solid-state quantum memory. Motivated by this proposal we systematically investigate oxygen-vacancy complexes in diamond by means of first principles density functional theory calculations. We find that all the considered oxygen-vacancy defects have a high-spin ground state in their neutral charge state, which disregards them as an origin for the ST1 color center. We identify a high-spin metastable oxygen-vacancy complex and characterize their magneto-optical properties for identification in future experiments.

Individually addressable and spectrally programmable artificial atoms in silicon photonics

A central goal for quantum technologies is to develop platforms for precise and scalable control of individually addressable artificial atoms with efficient optical interfaces. Color centers in silicon, such as the recently-isolated carbon-related G-center, exhibit emission directly into the telecommunications O-band and can leverage the maturity of silicon-on-insulator photonics. We demonstrate the generation, individual addressing, and spectral trimming of G-center artificial atoms in a silicon-on-insulator photonic integrated circuit platform. Focusing on the neutral charge state emission at 1278 nm, we observe waveguide-coupled single photon emission with narrow inhomogeneous distribution with standard deviation of 1.1 nm, excited state lifetime of 8.3 ± 0.7 ns, and no degradation after over a month of operation. In addition, we introduce a technique for optical trimming of spectral transitions up to 300 pm (55 GHz) and local deactivation of single artificial atoms. This non-volatile spectral programming enables alignment of quantum emitters into 25 GHz telecommunication grid channels. Our demonstration opens the path to quantum information processing based on implantable artificial atoms in very large scale integrated photonics.

Nitrogen-related point defects in homoepitaxial diamond (001) freestanding single crystals

Controllability of nitrogen doping, types of nitrogen-related defects, and their charge states in homoepitaxial diamond (001) crystals were investigated. For these purposes, 15N-doped 12C-enriched free-standing chemical vapor deposited diamond (001) crystals were grown through long-time growth using 12C-enriched methane as the carbon source gas and 15N-enriched molecular nitrogen as the nitrogen source gas. The formation of non-epitaxial crystallites and growth hillocks was suppressed by the application of the oxygen-adding growth condition. Nitrogen was incorporated uniformly into the crystals, with a concentration variation of less than 10%. About 70% of the total nitrogen was substitutional nitrogen in a neutral charge state Ns0. Hydrogen was incorporated at approximately the same concentration as nitrogen. Both NV and NVH centers were predominantly negatively charged defect structures, i.e., NV− and NHV− centers. The concentrations of NHV− centers were less than 5% of the total nitrogen concentration. Nitrogen concentration in diamond crystals was controlled by changing the N/C gas ratio over a wide doping range from 10 ppb to 10 ppm. Nitrogen incorporation efficiency was found to be (1.5 ± 0.5) × 10−4 in this study.

B12 and F430 models: Metal- versus ligand-centered redox in cobalt and nickel tetradehydrocorrin derivatives

DFT calculations with the well-tested OLYP and B3LYP* exchange-correlation functionals (along with D3 dispersion corrections and all-electron ZORA STO-TZ2P basis sets) and careful use of group theory have led to significant insights into the question of metal- versus ligand-centered redox in Co and Ni B,C-tetradehydrocorrin complexes. For the cationic complexes, both metals occur in their low-spin M(II) forms. In contrast, the charge-neutral states vary for the two metals: while the Co(I) and CoII-TDC•2– state are comparable in energy for cobalt, a low-spin NiII-TDC•2– state is clearly preferred for nickel. The latter behavior stands in sharp contrast to other corrinoids that reportedly stabilize a Ni(I) center.

Potential-Dependent Oxygen Reduction on FeN4 under Explicit Solvation Environment

Atomically dispersed FeN4 catalysts have been considered promising materials to replace the expensive Pt-based catalysts for oxygen reduction reaction (ORR), the development of which requires a fundamental understanding of the mechanism underlying their catalytic activity. Herein, we simulate the potential-dependent ORR process via density functional theory calculations and find that the O2 adsorption step becomes the rate-determining step (RDS) at slightly higher applied voltages and the onset potential is 0.8 V, which is because the substrate (*) and *OH intermediates are stabilized at constant potential states (CPS), yet the O2 adsorption becomes thermodynamically unfavorable compared to that at neutral charge states (NCS). The weakened O2 adsorption is attributed to the adjusted Fermi level at CPS that broadens the density of state distribution of the Fe 3d orbital. The determined RDS and the onset potential of ORR over FeN4 by performing potential-dependent simulations agree well with experimental findings, which improves the understanding of the ORR catalytic activity at applied potentials.

Muonium reaction in semiconductors and insulators: The role of the transition state

A general scheme for the reaction of muonium with the host lattice of semiconductors and insulators is derived. We begin our considerations when the muonium has been slowed down to a kinetic energy of one to a few eV, an energy at which electron excitations across the band gap are no longer possible and the subsequent deceleration is due to elastic or inelastic processes. Elastic scattering causes energy loss in small portions, on the order of 1 ‰ of kinetic energy per scattering, and eventually leads to atomic muonium at an interstitial site. At these low energies, however, the muonium may stay at one site long enough, especially at the top of the diffusion barrier, to excite a local vibration of the nearest lattice atoms, e.g., a stretching or breathing mode, leading to the stopping of muonium. The configuration formed after the excitation of the local phonon is designated “transition state”. This state may exist for some time and may be seen in /µSR as a fast relaxing diamagnetic signal. The decay of the transition state may lead either to interstitial atomic muonium or to a bound configuration in the neutral or positive charge state. In the present paper we apply this model to Al2O3 and to a Ge-rich SiGe alloy.