Negative Magnetoresistance Research Articles

Pressure induced semiconductor-like to metal transition and linear magnetoresistance in Cr2S2.88 single crystal

Abstract The transition metal chalcogenide Cr2S3-x has unique properties, such as a lower antiferromagnetic transition temperature, semiconducting behavior, and thermoelectric properties. We focus on the effects of high pressure on the properties of electrical transport and structure in the single crystal Cr2S2.88. It is observed that the resistance drops abruptly by approximately two orders of magnitude and the temperature derivative of the resistance changes from negative to positive after 15.7 GPa. The Cr2S2.88 crystal has undergone transitions from a semiconductor-like phase to a metal I phase and then to another metal II phase. Simultaneously, a structural phase transition after 16.1 GPa is confirmed by synchrotron angle dispersive X-ray diffraction (AD-XRD). After the structural phase transition, the negative magnetoresistance becomes positive with increasing pressure and shows a linear relationship in the metal II phase. Electron-type carriers dominate in the semiconductor-like phase, but hole-type carriers dominate after the structural phase transition. Our work provides an example of the effective modulation of semiconductor-like properties by pressure, which is meaningful for the innovation and development of semiconductor technology.

Some features of experimental determination of localization length of charges in carbon nanomaterials for positive and negative magnetoresistance

This paper discusses features of experimental determination of localization lengths of charge carriers in carbon-based nanomaterials for the cases of positive and negative magnetoresistance in the hopping conduction regime. Magnetoresistance at a temperature of 4.2 K in reduced graphene oxide (RGO) and ternary nanocomposite PVDF/PANI/MWCNT film based on polyaniline (PANI, 4.8 wt%) and multi-walled carbon nanotubes (MWCNT, 10 wt%) distributed in the dielectric matrix of polyvinylidene fluoride (PVDF) was studied. The studied samples RGO and PVDF/PANI/MWCNT show positive and negative magnetoresistance, respectively. It is shown that in sufficiently weak magnetic fields, positive and negative magnetoresistances show a quadratic dependence on the applied field. The charge carrier localization length estimated from conductivity in weak magnetic fields agrees with data obtained in high electric fields without magnetic field.

Signature of the Kondo effect in superparamagnetic GO incorporated Cobalt substituted Ni/NiO nanoparticles

The study reports on the magnetization, magnetoresistance, and transport properties of superparamagnetic 10% Co-doped Ni/NiO (C10-NN), Graphene Oxide (GO) incorporated 10% Co-doped Ni/NiO (C10-NNG), and 15% Co-doped Ni/NiO (C15-NN) nanoparticles synthesized via a microwave-assisted sol-gel auto-combustion method. All samples show hysteresis in negative Magnetoresistance (M-R) at different temperatures. Resistivity ρ(T) versus temperature plots of samples C10-NN and C15-NN show metallic behavior with applied fields of 0, 1, 5, 8 T, and at 0 T, 1 T respectively. However, the plot of R-T of the C15-NN sample shows a significant difference at 0 T and 1 T. At 0 T for this sample, the metallic behavior is observed for temperature T > TM, with the resistivity falling abruptly at and above TM = 246 K. The resistivity decreases with increasing temperature, exhibiting metallic behavior again above TMM < 276 K. This jump at 276 K, indicating a metal-to metal transition. The Kondo effect is observed for the first time in C10-NNG sample. The upturn of resistivity ρ(T) towards low temperature in the C10-NNG sample is well described by the power series equation and Kondo term. This sample exhibits the upturn resistivity along with a metal–insulator transition above and below the Kondo temperature TK≈ 93.51(2) K at the 0 T, 1 T, 5 T, and 8 T fields.

Giant and negative magnetoresistances in conical magnets in the nonequilibrium Boltzmann equation approach

We study magnetotransport in conical helimagnet crystals using the nonequilibriun Boltzmann equation approach. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative magnetoresistance despite only considering a single carrier type. For spin down electrons we observe giant magnetoresistance due to depletion of spin down electrons with an applied magnetic field. For spin up carriers, the magnetoresistance is negative, due to the increase in charge carriers with a magnetic field. In addition, we investigate the spin dependent Hall effect. If a magnetic field reaches some critical value for spin down electrons, giant Hall resistance occurs, i.e. Hall current vanishes. This effect is explained by the absence of spin down carriers. For spin up carriers, the Hall constant dramatically decreases with field, due to the increase in spin up electron density. Because of the giant spin dependent magnetoresistance and Hall resistivity, conical helimagnets could be useful in spin switching devices.

The effect of Mn doping on the electrical and magnetic properties of Cr2Te3 thin films

Mn doped Cr2-xMnxTe3 thin films were prepared by molecular beam epitaxy technology. The effect of Mn doping concentration on the structural, morphological, electrical and magnetic performance of Cr2Te3 thin films were detailed analyzed. By varying the beam current of the Mn source, it is found that Mn can be doped into the Cr2Te3 thin film when the Mn source temperature is lower than 700 ℃, while the Mn tends to bind with Te as MnTe crystal for Mn source temperature higher than 700 ℃. Cr2-xMnxTe3 films all exhibt strong ferromagnetism with a Curie temperature of around 175 K. The magnetization of the films decreases with increasing Mn doping concentration. A notable negative magnetoresistance effect is observed with the highest MR ratio about −60 % in the vicinity of the Curie temperature. A clear topological Hall signal was observed in the sample with a Mn source temperature of 700 ℃ at low temperature (2 K). These results imply that the electrical and magnetic properties of Cr2Te3 materials can be effectively controlled by doping to meet the practical needs of different fields.

Effect of magnetic entropy in the thermoelectric properties of Fe-doped Fe2VAl full-Heusler alloy

The effect of spin entropy on the transport of heat/charge carriers in the Fe-doped full-Heusler alloy Fe2+xVAl1-x with x = 0–0.1 has been studied through low-temperature magnetic and thermoelectric measurements. Magnetization (M) measurements confirm itinerant-electron weak-ferromagnetic behavior. A systematic increase of the magnetic transition temperature TC (from 40 K to 223 K) and of the saturation magnetization (from 0.13 to 0.41μB/Fe) with increasing Fe doping (from x = 0 to 0.1) is observed. Applying a magnetic field causes significant suppression of the Seebeck coefficient (S) and the entropy term (S/T) with a negative magnetoresistance near TC for all weak-ferromagnetic samples, demonstrating a clear effect of spin fluctuations. Analyzing M(T) and S(T), we rule out sizeable magnon drag contributions. A large spin fluctuations-induced enhancement in the thermoelectric power factor PF of about 18 % is achieved for x = 0.1 near TC when compared to measurements in a magnetic field of 7 T. The actual improvement in PF is even much higher, as the S shows a significant enhancement (about 34 %) compared to the estimated diffusion term of S(T) at TC. The number of point defects also increases with Fe doping, causing a significant reduction of the lattice thermal conductivity. This study demonstrates the role of spin fluctuations in enhancing the thermopower/thermoelectric performance of Fe-doped Fe2VAl and opens a vista for the strategy's applicability for various thermoelectric materials.

Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors.

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field-driven insulator-to-metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near-zero spin-orbit coupling of Gd3+-based half-filling f-electron system and the strong on-site f-d exchange coupling in Gd atoms. These results not only providea novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet-based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

The structure, magnetic properties, magnetotransport and temperature coefficient of resistivity of hexagonal 4H-SrMnO3 manganite

The perovskite hexagonal SrMnO3 manganite with four layers (4H-SrMnO3) have been one of the hot topics in materials science due to the physical characteristics of antiferromagnetic, ferroelectric, and thermoelectric effects. The transport properties and magnetoresistance (MR) effect of 4H-SrMnO3 have seldom been reported. The structure, temperature coefficient of resistivity (TCR), magnetic and magnetotransport properties of the 4H-SrMnO3 SrMnO3 manganite obtained by solid state reaction have been investigated in this work. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) measurements at room temperature reveal that the SrMnO3 sample exhibits a pure hexagonal symmetric structure, with uniform distribution of particles and elements. Under applied magnetic fields of 2000 Oe, the SrMnO3 sample exhibits a transition from antiferromagnetic (AFM) to paramagnetic (PM) behavior at approximately 280 K, known as the Néel temperature (TN). The resistance is influenced by the magnetic field, but overall exhibits an insulating state. Remarkably, the SrMnO3 sample shows significant MR effect near room temperature. The negative MR near room temperature varies from 5.8 % with 1 T field to 16.8 % with 6 T field, indicating an existence of obvious MR in the hexagonal AFM SrMnO3 manganite. Furthermore, the maxmium value of TCR reaches 4.34 % K−1 near room temperature. These findings of room-temperature TCR and room-temperature MR in the AFM 4H-SrMnO3 hold immense value for the research and potential application of the AFM spintronics and devices.

An ab initio and monte carlo study of MS2/VS2 (M=Mo, W) ferromagnetic bilayer with negative magnetoresistance in MoS2/VS2 heterostructure

Herein, the electronic and magnetic properties of ferromagnetic van der Waals MS2/VS2 (M=Mo, W) heterostructures, investigated using density functional theory (DFT) and Monte Carlo (MC) simulations are reported. Stability was confirmed via interlayer binding energy, and electronic band structure analysis revealed an indirect band gap with staggered (type II) heterojunctions. The systems exhibit potential for opto-spintronics devices due to large band offsets in both spin channels. Ferromagnetic ground states were identified with Curie temperatures of 299 K and 301 K for MoS2/VS2 and WS2/VS2, respectively. Biaxial strain studies indicated that while WS2/VS2 transitions to half-metallic behavior under tensile strain beyond 1%, the Curie temperatures decrease under both compressive and tensile strains, demonstrating tunable magnetic properties. Additionally, MoS2/VS2 heterostructures fabricated via drop casting exhibited negative magnetoresistance, suggesting potential in spintronics applications.

Carrier-density-determined Magnetoresistance in Semimetal SrIrO3

Abstract SrIrO3, a Dirac material with a strong spin-orbit coupling (SOC), is a platform for studying topological properties in strongly correlated systems, where its band structure can be modulated by multiple factors, such as crystal symmetry, elements doping, oxygen vacancies, magnetic field, and temperature. Here, we discover that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO3. The decrease of carrier density subdues the weak localization (WL) and the associated negative magnetoresistance, while enhancing the SOC-induced weak anti-localization (WAL). Notably, the sample with the lowest carrier density exhibited high-field positive magnetoresistance, suggesting the presence of a Dirac cone. In addition, the anisotropic magnetoresistance (AMR) indicates the anisotropy of the electronic structure near the Fermi level. The engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.

Weyl fermion excitations in the ideal Weyl semimetal CuTlSe2

An ideal Weyl semimetal is characterized by a dispersion in which only Weyl cones intersect the Fermi level, with low-energy behavior being governed by Weyl fermions. Although ideal Weyl semimetals have long been anticipated, only a few are realized in nonmagnetic materials. In this study, we confirm the presence of Weyl-fermion excitations in the ideal Weyl semimetal CuTlSe2 via a combination of magnetoresistance, Hall-effect, magnetic-susceptibility, nuclear magnetic resonance (NMR), and muon-spin relaxation (µSR) experiments. Magnetoresistance measurements reveal a negative longitudinal magnetoresistance (LMR), which scales as B2, while Hall-effect results indicate a predominant contribution from Weyl fermions with a hole-type charge. Magnetic susceptibility and µSR measurements indicate the lack of any intrinsic spontaneous magnetic moments down to base temperature. Finally, the NMR results can be modeled by a two-component effective Hamiltonian, which reproduces well the temperature-dependent Cu63 NMR (T1T)−1 factor, shown to scale as T2 below 100 K and as T1 above 100 K. Overall, we find that the extremely low concentration (1017cm−3) of carriers in CuTlSe2 originates from an ideal nonmagnetic Weyl semimetallic state, persisting up to a thermal excitation energy of 9 meV (100 K), above which trivial electronic bands close to EF take over. Our findings highlight CuTlSe2 as a new member of the intriguing class of Weyl semimetals. Published by the American Physical Society 2024

One-step ultrafast Joule heating synthesis of EuB6 ceramics and their electronic transport and magnetic properties

The synthesis of high-performance rare-earth borides (e.g., RB2, RB4, R2B5, RB6, RB12, and RB66) typically necessitates sintering at high temperatures and high pressures for prolonged durations. Traditional methods, such as hot-pressing sintering and spark plasma sintering, are marked by high production costs and low efficiency. Here, using EuB6 as an example, we demonstrate the successful synthesis of rare-earth boride ceramics utilizing the one-step ultrafast joule heating technology. Using this method, we optimized the sintering temperature and duration and synthesized EuB6 ceramics with superior electronic and magnetic properties at 1600 °C in just 5 min. The EuB6 ceramics prepared under optimized conditions show distinct paramagnetic to ferromagnetic phase transition, significant negative magnetoresistance, and enhanced magnetization. The combination of the one-step ultrafast Joule heating technology and boron thermal reduction method offers a simple and fast synthesis approach for fabricating polycrystalline EuB6 and may be extended to prepare other rare-earth and transition-metal borides.

Near-room-temperature magnetic properties and magnetocaloric effect of polycrystalline and nano-scale manganites Pr(0.65-x)NdxSr0.35MnO3 (x ≤ 0.35)

Here we report investigations of structural, electrical and magnetic properties of bulk and nano-sized Pr0.65-xNdxSr0.35MnO3 compounds (x ≤ 0.35). Polycrystalline compounds were produced by solid – state reaction and nanocrystalline samples were obtained by sol–gel method. Analysis of x-ray diffraction patterns revealed a change in lattice structure from ‘Pbnm’ to ‘R3c’ symmetry, with diminishing cell volume upon increasing Nd ions substitution for all samples. Optical microscopy was used for bulk surface morphology and transmission electron microscopy was implemented for nano-sized samples. Iodometric titration showed oxygen deficiency for bulk compounds and oxygen excess for nano-sized particles. Measurements of resistivity of bulk samples revealed a single peak at temperatures associated with grain boundary conditions and with ferromagnetic/paramagnetic transition and negative magnetoresistivity. Critical magnetic behavior analysis disclosed that the polycrystalline samples are governed by a tricritical mean field and by 3D Heisenberg models while nanocrystalline samples are governed by a mean field model. Curie temperature Tc values remain in near room temperature range for all bulk compounds; they lower with increasing Nd ions substitution from 295 K for the parent bulk compound to 268 K for x = 0.35. Tc is lowered from 255 K for the parent nano-sized compound in small temperature intervals. All compounds exhibit second-order magnetic phase transitions and relatively high magnetic entropy change, with the highest value of 5.74 J/kgK for x = 0.25 bulk sample in μ˳∆H = 4 T. Strong magnetocaloric effect, stability and the possibility of fine-tuning Tc by Nd ions substitution make the investigated bulk polycrystalline compounds promising for application in magnetic refrigeration. Nano-sized samples possess lower magnetic entropy changes of maximum 2.4 J/kgK in μ˳∆H = 4 T for x = 0.15, but wider effective entropy change temperature (δTfwhm) and relative cooling power on par with other manganites, bringing them into the conversation as a viable option in cooling materials.

Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure

We report the magnetic field dependent magnetization and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/ γ -Fe2O3/LSMO trilayer heterostructure and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer ( γ -Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half ) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0–7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T < H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @ 5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @ 5 K and 15% @ 300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @ 5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @ 5 K and 23% @ 300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.

Intrinsic negative magnetoresistance from the chiral anomaly of multifold fermions

The chiral anomaly - a hallmark of chiral spin-1/2 Weyl fermions - is an imbalance between left- and right-moving particles that underpins phenomena such as particle decay and negative longitudinal magnetoresistance in Weyl semimetals. The discovery that chiral crystals can host higher-spin generalizations of Weyl quasiparticles without high-energy counterparts, known as multifold fermions, raises the fundamental question of whether the chiral anomaly is a more general phenomenon. Answering this question requires materials with chiral quasiparticles within a sizable energy window around the Fermi level that are unaffected by extrinsic effects such as current jetting. Here, we report the chiral anomaly of multifold fermions in CoSi, which features multifold bands within ~0.85 eV of the Fermi level. By excluding current jetting through the squeezing test, we measure an intrinsic, longitudinal negative magnetoresistance. We develop a semiclassical theory to show that the negative magnetoresistance originates in the chiral anomaly, despite a sizable and detrimental orbital magnetic moment contribution. A concomitant non-linear Hall effect supports the multifold-fermion origin of the magnetotransport. Our work confirms the chiral anomaly of higher-spin generalizations of Weyl fermions, currently inaccessible outside solid-state platforms.

Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 are studied. It is shown that the negative magnetoresistance at low magnetic field is described in terms of quantum corrections to the conductivity. The magnitude of these corrections depends on the gate voltage and increases when approaching the charge neutrality point. The Hall coefficient RH is nonlinear at low magnetic fields for any gate voltage, and the RH nonlinearity is the most pronounced at high negative gate voltages. At high fields, the slope of the magnetic field dependence of the Hall coefficient changes its sign at some gate voltage.

Temperature dependence of positive and negative magnetoresistances of tantalum-covered multiwalled carbon nanotubes

Temperature dependence of positive and negative magnetoresistances of tantalum-covered multiwalled carbon nanotubes

Anomalous negative magnetoresistance in quantum dot Josephson junctions with Kondo correlations

Anomalous negative magnetoresistance in quantum dot Josephson junctions with Kondo correlations

An Extensive Review of MR Sensors with Design and Characteristic Evaluation of Three-layered TMR Sensor

Abstract: The reliability and efficacy of sensor-based automated systems have improved due to the proliferation of electric vehicles, renewable sources, and integrated systems in power industries extensively. This has been accomplished by increasing the power density and decreasing the volume of the system. Background: Mathematical estimation and comparative analysis of the physical factors result in massive usage of operational matrices measured using sensors. Magnetic field sensors, used in industries and biomedical applications, have a high level of precision in the evaluation of measurements. In order to extract the measured parameters such as sensitivity, accuracy, operating cost, the linear range of operation, and power utilisation, these sensors adhere to the physical constraints during their nominal working conditions. The characteristics of the aforementioned sensors are enumerated in detail in this article. Objective: This objective is highly focused on providing a comprehensive overview of classification and the properties of Hall-Effect, anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), and tunnelling magnetoresistive (TMR) sensors. The dissertation on its properties concludes that TMR is more reliable and sensitive in variable operating conditions. Methods: The methods for selecting the sensors for an application are confined to voltage fluctuations and sensitivity. A three-layered TMR sensor with two magnetic layers and an insulator in between is proposed as a significant advancement compared to the literature. The micromagnetic simulation is carried out at room temperature for a three-layered TMR made up of neodymium alloy, magnesium oxide, and cobalt platinum alloy. Conclusion: Based on the studies executed, it is determined that TMR is more sensitive than both conventional and MR sensors. The proposed schematic claims that the higher free layer thickness offers maximum sensitivity with 77% negative magnetoresistance. The reduced coercivity of 1.9Oe is achieved in this combination at a specified temperature range.

The anomalous Hall effect in the epitaxial-grown semiconducting CuCo2O4 thin film

The high-quality inverse spinel CuCo2O4 thin films are epitaxially grown on (001) MgAl2O4 substrates by radio frequency magnetron sputtering. The electrical transport properties exhibit typical semiconducting characteristics, accompanying the enhancement of resistivity with the thinning of CuCo2O4 thickness. The transport properties could be well understood by the Mott variable range hopping model. The anomalous Hall effect with a clear hysteresis loop is observed below 100 K, indicating the existence of out-of-plane magnetization in the epitaxial-grown CuCo2O4 films. In addition, the negative magnetoresistance at low temperature reverses to the positive magnetoresistance (≥100 K), which is related to the changes from the decrease in spin/carrier scattering under the magnetic field at low temperature to the enhancement of carrier deflection due to the conventional Lorenz force (≥100 K). The observed physical properties are closely related to the orbital occupation of Cu ion in CuCo2O4 films, which is a significant difference compared to that of documented metallic NiCo2O4. This work is a good comprehensive study of inverse spinel oxide thin films.