Negative Magnetoresistance Effect Research Articles

Structural, electrical and magnetoresistance feature of PP+Fe3O4 + Multi-walled carbon nanotubes nano-hybrid based polymer nanocomposite

This work studied the role of the iron oxide and MWCNT in a change of the electrophysical properties of PP + Fe3O4 + MWCNT nanocomposite to evaluate the potential of these nanocomposites as magnetic field sensors and EMI materials. The morphology of the obtained nanocomposites was studied with a scanning electron microscope and investigated that the sizes of both magnetite nanoparticles and carbon nanotubes stay stable during the three-phase nanocomposite formation. In addition, the X-ray diffraction method revealed that MWCNT plays an essential role in the ordered structure-formation of a polymer nanocomposite more than iron oxide nanoparticles. Dielectric properties of the PP + Fe3O4 nanocomposite were studied. Both dielectric permeability and dielectric losses of PP+MWCNT+Fe3O4 nanocomposites were enhanced. The dielectric permeability of the nanocomposite increased due to the interphase polarization, which in turn related to the formation of ordered structure caused the partial arrangement of carbon nanotubes in the polymer. Furthermore, the study showed that the negative magnetoresistance effect of PP+MWCNT+Fe3O4 nanocomposites is more dependent on the amount of Fe3O4 nanoparticles than that of MWCNT, which explained by the spin polarization of Fe3O4 nanoparticles at room temperature. In this research, the PP+5%Fe3O4+1%MWCNT nanocomposites were considered to be an effective material for magnetic field sensors and EMI shielding.

Research Advances in Magnetic Field‐Assisted Photocatalysis

AbstractSolar‐to‐chemical energy conversion thorugh photocatalytic technology has garnered significant attention due to its potential for clean hydrogen pro duction, pollutant degradation, and carbon dioxide reduction. However, its relatively low solar‐to‐chemical conversion efficiency hinders its industrial development. External fields have currently emerged as a supplementary energy source to augment the overall catalytic efficiency. Recently, the photocatalytic performance has been considerably enhanced through magnetic field modulation, which promotes the separation and transfer of photoexcited charge carriers. This article systematically reviews the recent research progress of magnetic field–assisted photocatalysis, discussing phenomena such as the negative magnetoresistance effect, Lorentz force, and spin polarization. It comprehensively analyzes the effect of magnetic fields on critical processes in photocatalysis: light absorption, charge‐carrier separation, and surface reactions. In particular, this review focuses on the spin‐relaxation mechanism, explains how the electron lifetime is extended through spin polarization, and proposes design strategies for spin‐polarized materials. Finally, this review discusses the challenges and potential opportunities for enhancing photocatalytic efficiency. The ultimate objective of this review is to offer notable theoretical and experimental insights that can guide the design and development of high‐performance photocatalysts and photocatalytic systems.

Chiral Anomalies in Organic Dirac Semimetals

A three-dimensional massless Dirac fermion system exhibiting broken chiral symmetry was successfully realized in organic conductor α-(BEDT-TTF)2I3 under high pressures. Our study detected the chiral anomaly-induced negative magnetoresistance and planar Hall effects and opened new avenues for further advancements in the field.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Negative magnetoresistance effect in Ba-doped layered double perovskite La2CuSnO6

The layered double perovskite La2-xBaxCuSnO6 (0.05 ≤ x ≤ 0.20) ceramics were synthesized successfully by solid-state reaction, and the crystal structure, transport and magnetic properties are investigated. It is found that the temperature-dependent resistivity ρ(T) shows a semiconductor behavior, which is related to magnetic ordering in two-dimensional CuO2 layers, and the MR effect exists in La2-xBaxCuSnO6. With decreasing the temperature, the MR effect changes from positive to negative, giving a positive maximum at Tmax (≈ TC) and showing a large negative MR effect at around 40 K with a value of about 20–30% under field H = ± 50 kOe. It is suggested that the negative MR effect in Ba-doped La2CuSnO6 is attributed to the field-induced suppression of in-plane spin-disorder scattering in CuO2 layers. A small amount of Ba doping can adjust the competition and synergy of the AFM and FM interactions through changing the tilt and distortion of CuO6 octahedrons, the in-plane Cu-O bond lengths, and the content of Jahn-Teller exciton Cu2+ ions, besides the stabilization of the La2CuSnO6 structure. The competition and synergy of the AFM and FM interactions CuO2 layers dominate the transport and magnetic properties of Ba-doped La2CuSnO6.

Photothermal-Magnetic Synergistic Effects in an Electrocatalyst for Efficient Water Splitting under Optical-Magnetic Fields.

The slow oxygen evolution reaction (OER) limits water splitting, and external fields can help improve it. However, the effect of a single external field on the OER is limited and unsatisfactory. Furthermore, the mechanism by which external fields improve the OER is unclear, particularly in the presence of multiple fields. Herein, a strategy is proposed for enhancing the OER activity of a catalyst using the combined effect of an optical-magnetic field, and the mechanism of catalytic activity enhancement is studied. Under the optical-magnetic field, Co3 O4 reduces the resistance by increasing the catalyst temperature. Meanwhile, CoFe2 O4 further reduces the resistance via the negative magnetoresistance effect, thus decreasing the resistance from 16 to 7.0Ω. Additionally, CoFe2 O4 acts as a spin polarizer, and electron polarization results in a parallel arrangement of oxygen atoms, which increases the kinetics of the OER under the magnetic field. Benefiting from the optical and magnetic response design, Co3 O4 /CoFe2 O4 @Ni foam requires an overpotential of 172.4mV to reach a current density of 10mAcm-2 under an optical-magnetic field, which is significantly higher than those of recently reported state-of-the-art transition-metal-based catalysts.

Electrical and Thermal Bias‐Driven Negative Magnetoresistance Effect in an Interacting Quantum Dot

Spin‐dependent electron transport is theoretically studied for a system with an interacting quantum dot sandwiched between a pair of ferromagnetic electrodes. By separately applying an electrical bias or a temperature gradient across the junction, a spin‐polarized current can be obtained and controlled by tuning the gate voltage. Interestingly, regardless of whether the electron transport is driven by the bias voltage or temperature difference, the current in the device always exhibits negative magnetoresistance under the control of the gate voltage. Such magnetoresistance anomalies in the current profile originate from the spin‐selective tunneling channels in quantum dots, which have been proven experimentally feasible. This device scheme is compatible with current technologies and has potential applications in spintronics or spin caloritronics.

Nonlinear Transport and Magnetic/Magneto-Optical Properties of Cox(MgF2)100-x Nanostructures

The aim of this work was to comprehensively study the effect of the variable atomic composition and structural-phase state of Cox(MgF2)100-x nanocomposites on their nonlinear transport and magnetic/magneto-optical properties. Micrometer-thick nanocomposite layers on glass substrates were obtained by means of ion-beam sputtering of a composite target in the argon atmosphere in a wide range of compositions (x = 16–59 at.%). Using a low metal content in the nanocomposite, magnesium fluoride was kept in the nanocrystalline state. As the metal content increased, nanocrystalline cobalt was formed. The value of the resistive percolation threshold, xper = 37 at.%, determined from the concentration dependences of the electrical resistance of the nanocomposites coincided with the beginning of nucleation of the metallic nanocrystals in the MgF2 dielectric matrix. The absolute value of the maximum negative magnetoresistive effect in the nanocomposites was 5% in a magnetic field of 5.5 kG at a Co concentration of x = 27 at.%.

Doping-enhanced robustness of anomaly-related magnetoresistance in WTe2±α flakes

We study systematically the negative magnetoresistance (MR) effect in WTe2±α flakes with different thicknesses and doping concentrations. The negative MR is sensitive to the relative orientation between electrical-/magnetic-field and crystallographic orientation of WTe2±α . The analysis proves that the negative MR originates from chiral anomaly and is anisotropic. Maximum entropy mobility spectrum is used to analyze the electron and hole concentrations in the flake samples. It is found that the negative MR observed in WTe2±α flakes with low doping concentration is small, and the high doping concentration is large. The doping-induced disorder obviously inhibits the positive MR, so the negative MR can be more easily observed. In a word, we introduce disorder to suppress positive MR by doping, and successfully obtain the negative MR in WTe2±α flakes with different thicknesses and doping concentrations, which indicates that the chiral anomaly effect in WTe2 is robust.

Magnetodielectric and TMR effects in P(VDF-HFP)/SrFe12O19 composite films for magnetic field – Tuned photodetector application

Magnetoelectric (ME) multiferroic materials possess extensive research interest as a result of their use in a variety of sectors. In this work, the optical properties of plain P(VDF-HFP) film and P(VDF-HFP)/SrFe12O19 composite films are investigated through UV-Vis absorption spectroscopy. In addition, the ME coupling of SrFe12O19 nanofibers reinforced P(VDF-HFP) composite films is investigated though magnetodielectric (MD) measurements. The parameters such as dielectric constant, capacitance, dielectric loss and impedance of the composite films are found to change with the applied magnetic field which is attributed to the direct ME coupling of the composite films. The prepared ME films show a negative tunneling magnetoresistance (TMR) effect with maximum TMR% of 14 % for the film (PSNF20) with 20 wt% of SrFe12O19 nanofiber loading. Photodetectors are fabricated using the films as active elements and the performance of the photodetectors is studied under various intensities of visible light radiation. All the devices exhibit good photosensitivity, responsivity and specific detectivity at an illumination intensity of 20 mW/cm2. The photodetector (PD20) fabricated using PSNF20 as an active element has the maximum rise/decay time, photosensitivity, responsivity and specific detectivity values as 468 /553 ms, 2.7 × 103, 22 mA/W and 6.77 × 1013 Jones, respectively at 20 mW/cm2. In addition, the performance of the devices is analyzed by subjecting the active element to external magnetic field. The photosensitivity, responsivity and specific detectivity all improve, showing that the magnetic field has an effect on the photodetector. The above parameters are maximum for PD20 device and the values are 4.3 × 103, 26 mA/W and, 8.01 × 1013 Jones, respectively at 4000 Oe and 20 mW/cm2. Thus, the prepared flexible magnetoelectric films of P(VDF-HFP)/SrFe12O19 nanofiber composites have been shown to be good options for the magnetic field tuned photodetector applications such as environmental sensing monitor, safety and security, optical communication systems, magnetic sensors, piezoelectric sensors and spintronics devices.

Modulating negative magnetoresistance via inducing vacancy for regulates electron transport under magnetic ambient conditions

The introduction of external magnetic field is one of the most widely studied strategies for photogenerated carrier separation in recent years. However, magnetic materials have great disadvantages in terms of photocatalytic performance. Semiconductor materials with magnetic properties are also extremely rare. It is extremely peculiar to research the magnetism of semiconductor photocatalyst triggered by vacancy. Here, the first example of ferromagnetic Bi2S3 is achieved by controlled Bi vacancy (Bi2S3-VBi). The magnetism properties depends largely on the spin polarization of p electrons in S atoms, and its magnetic moment is mainly distributed on S atoms around cation vacancies. Under the induction of external magnetic field, the tunneling of spin-polarized electrons in S-2p orbital makes Bi2S3-VBi have negative magnetoresistance effect. The ferromagnetic arrangement of Bi2S3-VBi particles can reduce the resistivity and increase the tunneling of electrons. Meanwhile, Lorentz force generated by external magnetic field acts reversely on photogenerated electrons and holes, thus effectively inhibiting the recombination of carriers in photocatalyst. Moreover, the influence of Bi vacancy on Bi2S3 magnetism is investigated by DFT calculation. This study provides a new strategy for effective carrier separation in photocatalysis.

Effect of Boundary Scattering on Magneto-Transport Performance in BN-Encapsulated Graphene

For conductors in the ballistic regime, electron-boundary scattering at the sample edge plays a dominant role in determining the transport performance, giving rise to many intriguing phenomena like low-field negative magnetoresistance effect. We systematically investigate the magneto-transport behaviors of BN-encapsulated graphene devices with narrow channel width W, wherein the bulk mean free path L mfp can be very large and highly tunable. By comparing the magnetoresistance features and the amplitude of L mfp in a large parameter space of temperature and carrier density, we reveal that the boundary-scattering-dominated negative magnetoresistance effect can still survive even when the ballistic ratio (L mfp/W) is as low as 0.15. This striking value is much smaller than the expected value for achieving (quasi-) ballistic transport regime (L mfp/W ≥ 1), and can be attributed to the ultra-low specularity of the sample edge of our graphene devices. These findings enrich our understanding of the effects of boundary scattering on channel transport, which is of vital importance for future designs of two-dimensional electronic devices with limited lateral sizes.

Boosting photocatalytic activity through tuning electron spin states and external magnetic fields

Photocatalysis is considered as one of the most promising technologies to generate renewable energy and degrade environmental pollutants. Tremendous efforts have been made to improve photocatalytic efficiency. Among these, tuning spin polarization and introducing an external magnetic field are considered two promising strategies to boost photocatalytic performance. Herein this review highlights the recent breakthroughs through manipulating spin states and applying external magnetic fields for enhancing photocatalytic reactions. The relevant characterization techniques and fundamental mechanisms are summarized. Spin polarization states of photocatalysts have received considerable attention due to their unique roles, including inhibiting the recombination of photoexcited carriers owing to spin orientation constraint, enhancing the reaction product selectivity, and reducing the reaction barriers via optimizing the absorption energy and binding strength. As for the effects of external magnetic field on photocatalytic performance, we mainly discuss the separation enhancement of photoinduced carriers under static and time-varying magnetic fields and the magneto-hydrodynamic effect of charged particles. Lastly, the negative magnetoresistance effect is discussed due to the synergistic effects of the electron spin state and an external magnetic field. These discussions in this review may provide new insights into designing new semiconductors for boosting photocatalytic performance in internal and external magnetic fields.

Giant Negative Magnetoresistance beyond Chiral Anomaly in Topological Material YCuAs2.

The large negative magnetoresistance (MR) effect, which usually emerges in various magnetic systems, is a technologically important property for spintronics. Recently, the so-called "chiral anomaly" in topological semimetals offers an alternative to generate a considerable negative MR effect without utilizing magnetism. However, it requires that the applied magnetic field must be strictly along the electric current direction, which sets a strong limit for practical applications. Here, a giant negative MR effect is discovered with a value of up to -40% in 9 T at 2 K in the nonmagnetic Dirac material YCuAs2 , which is not restricted to the specific configuration for applied magnetic fields. Based on magnetic susceptibility and NMR measurements, the giant negative MR effect is tightly connected with the unexpected spin-dependent scattering from vacancy-induced local moments, which is also beyond the classical Kondo effect. The present work not only offers an alternative route for spintronics based on nonmagnetic topological materials, but also helps to further understand the negative MR effect in topological materials.

Semiclassical magnetotransport including effects of Berry curvature and Lorentz force

In topological semimetals and insulators, negative longitudinal magnetoresistance and angle-dependent planar Hall effect have been reported arising from the Berry curvature. Using the Boltzmann transport theory, we present a closed-form expression for the nonequilibrium distribution function which includes both the effects of the Berry curvature and Lorentz force. Using this formulation, we obtain analytical expressions for conductivity and resistivity tensors in Weyl semimetals demonstrating a non-monotonic field dependence arising from the competition between the two effects.

Abnormal Magnetoresistance Transport Properties of van der Waals Antiferromagnetic FeNbTe2

The emergence of two-dimensional (2D) van der Waals magnetic materials has attracted enormous attention due to their novel physical phenomena and potential application in the fields of spintronics and information storage technology. Here, we systematically study the magnetic and transport properties of a van der Waals antiferromagnetic material, FeNbTe2. The magnetic and magnetoresistance measurements verified its antiferromagnetic properties, spin glass state, and negative magnetoresistance effect at lower temperatures. In addition, the measurement results of transport also show the existence of angle-dependent anisotropic magnetoresistance in a wide temperature range and anisotropic magnetoresistance inversion in a certain temperature range.

Electrical and galvanomagnetic properties of black phosphorus single crystals

Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ(Т,В) and the Hall constant Rh(Т,В) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ(Т,В) and Rh(Т,В) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σа(Т) – σс(Т)]/σс(Т) below 50—70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields.

The effects of substrate temperature on the magnetic and magnetotransport properties of Cr1-xTe epitaxial films

Cr1-xTe epitaxial films have been grown on SrTiO3 (111) single-crystal substrates using molecular beam epitaxy. The effects of substrate temperature on the structural, electronic, and magnetic properties of the Cr1-xTe films are studied. As the substrate temperature increases, the Cr content increases, which results in the increase in the Curie temperature and in-plane magnetization and decrease in the out-of-plane magnetization and coercive field as well as significant changes in magnetoresistance and perpendicular magnetic anisotropy of the Cr1-xTe films. All Cr1-xTe films show metal-to-semiconductor-like transitions which are coupled with paramagnetic-to-ferromagnetic transitions whose temperatures depend on the Cr concentration x. Upon the application of magnetic fields, all samples show negative magnetoresistance effect which is strongest near the transitions and can be understood within the framework of electronic phase separation. These results demonstrate that the substrate temperature have significant effects on the magnetic and magnetotransport properties of Cr1-xTe films and should be carefully controlled in order to obtain desired electronic and magnetic properties.

Anomalous Hall effect and anisotropic magnetoresistance of molecular beam epitaxy grown Cr2Te3 thin films

High-quality Cr2Te3 epitaxial thin films with thicknesses ranging from 2.5 to 30 nm have been epitaxially grown on SrTiO3(111) single-crystal substrates using molecular beam epitaxy. The optimal growth temperature of the films was found to be 275 °C. All Cr2Te3 films show semiconductor-to-metal transition which is coupled with the paramagnetic-to-ferromagnetic transition at TC = 175 K. Consequently, all Cr2Te3 films show negative magnetoresistance effect which is strongest near TC and can be understood within the framework of electronic phase separation scenario. Both anomalous Hall effect and out-of-plane magnetic hysteresis loops show that all Cr2Te3 films have perpendicular magnetic anisotropy with the easy magnetization axis along the c-axis of the films. With decreasing film thickness the coercivity increases and reaches 10 kOe for the thinnest 2.5-nm film. Magnetoresistance measurements at different angles between the direction of the magnetic field and the easy magnetization axis reveal that Cr2Te3 films show anisotropic magnetoresistance whose out-of-plane values are larger than those of in-plane ones.

Anisotropy and size effects in Bi1-xSbx semiconductor wires in a magnetic field

The electron transport and longitudinal and transverse magnetoresistance (MR) of glass-insulated Bi0.92Sb0.08 single-crystal wires with diameters of 180 nm to 2.2 μm and the (1011) orientation along the wire axis have been studied. The wires have been prepared by liquid-phase casting. It has been first found that the energy gap ΔE increases by a factor of 4 with a decrease in wire diameter d due to the manifestation of the quantum size effect, which can occur under conditions of a linear energy–momentum dispersion law characteristic of both the gapless state and the surface states in topological insulators (TIs). It has been revealed that, in strong magnetic fields at low temperatures, a semiconductor–semimetal transition occurs, which is evident as an anomalous decrease in the transverse MR anisotropy and the appearance of a metallic temperature dependence of resistance at T < 100 K. It has been found that the effect of negative MR, the appearance of an anomalous maximum in the longitudinal MR, and the dependence of Hmax ~ d-1 at 4.2 K is a manifestation of the classical MacDonald–Chambers size effect. The calculated value of the component of the Fermi momentum perpendicular to the magnetic induction vector H is 2 times higher than the value for pure bismuth wires. The features of the manifestation of the quantum size effect in Bi0.92Sb0.08 wires, semiconductor–semimetal electronic transitions induced by a magnetic field, and a decrease in the transverse MR anisotropy indicate the occurrence of new effects in low-dimensional structures based on semiconductor wire TIs, which require new scientific approaches and applications.