Inorganic photochromic (PC) materials are gaining increasing recognition as promising candidates for applications in optical storage and information display. However, conventional photochromic materials exhibit sluggish coding rates and a deficiency in intelligent response for writing and erasing under multiple excitation sources. This deficiency contributes to suboptimal readout/decoding efficiency and storage security. Here, we show a Ba2NaNb5O15:Er3+ photochromic material with photoluminescence reversible modulation that can fast respond to both ultraviolet light and 532 nm laser within about 1 s, which accompanied by thermal bleaching. The PC mechanism which is based on defect state exchanges between oxygen vacancy defects and color centers is attributed to the structural flexibility of Nb-O systems and oxygen vacancy increased under irradiation. More importantly, it shows differential PC decay behavior in response to X-ray and UV light due to the difference in the number of trapped carriers. Therefore, a simple strategy based on different self-recovery levels induced by double excitation is constructed to develop an encrypted optical memory model. This fast and differential excitation source response behavior hopefully stimulates the development of new encrypted optical memory.