Nanoscale Footprint Research Articles

Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors.

Two-dimensional materials, in particular transition metal dichalcogenides (TMDs), have attracted a nascent interest in the implementation of memristive architectures. In addition to being functionally similar to synapses, their nanoscale footprint promises to achieve the high density of a biological neural network in the context of neuromorphic computing. However, in order to advance from the current exploratory phase and reach reliable and sound memristive performances, an understanding of the underlying physical mechanisms in TMD memristors seems imperative. Despite the distinctive transport medium inherent to multilayer TMDs, the memristance is routinely attributed to defects or metal atoms present in the system, with their precise contribution remaining elusive. Specifically, the role of intrinsic point defects in the formation of conductive channels, although shown for monolayer TMDs, is not conclusively studied for multilayer samples. In this work, using density functional theory (DFT) and nonequilibrium Green's function (NEGF) formalism, a systematic study is carried out to analyze the impact that defects and metal atoms produce on the out-of-plane conductivity of multilayer TMDs. MoS2, a representative of the 2H structural configuration, and PtS2, a representative of the 1T structure, the most common crystal arrangements among TMDs, are used for this analysis. It is found that the intrinsic sulfur vacancies, which are the dominant defects present in both TMDs, appear to be insufficient in causing resistive switching on the application of an external bias. The claim that the intrinsic point defects on their own can realize a valence change memory-type device by providing a controllable conductive channel through the van der Waals structure seems, according to our study, improbable. The presence of metallic atoms is demonstrated to be essential to trigger the memristive mechanism, emphasizing the proper choice of a metal electrode as being critical in the fabrication and optimization of memristors using TMDs.

Site-Specific Emulation of Neuronal Synaptic Behavior in Au Nanoparticle-Decorated Self-Organized TiOx Surface.

Neuromorphic computing is a potential approach for imitating massive parallel processing capabilities of a bio-synapse. To date, memristors have emerged as the most appropriate device for designing artificial synapses for this purpose due to their excellent analog switching capacities with high endurance and retention. However, to build an operational neuromorphic platform capable of processing high-density information, memristive synapses with nanoscale footprint are important, albeit with device size scaled down, retaining analog plasticity and low power requirement often become a challenge. This paper demonstrates site-selective self-assembly of Au nanoparticles on a patterned TiOx layer formed as a result of ion-induced self-organization, resulting in site-specific resistive switching and emulation of bio-synaptic behavior (e.g., potentiation, depression, spike rate-dependent and spike timing-dependent plasticity, paired pulse facilitation, and post tetanic potentiation) at nanoscale. The use of local probe-based methods enables nanoscale probing on the anisotropic films. With the help of various microscopic and spectroscopic analytical tools, the observed results are attributed to defect migration and self-assembly of implanted Au atoms on self-organized TiOx surfaces. By leveraging the site-selective evolution of gold-nanostructures, the functionalized TiOx surface holds significant potential in a multitude of fields for developing cutting-edge neuromorphic computing platforms and Au-based biosensors with high-density integration.

The history of neuromorphic computing and its application on recognition systems

Since the invention of the memristive device with a nano-scale footprint, a lot of scholars have started to focus on the area of recognition systems based on the Complementary Metal-Oxide Semiconductor chips (CMOS) integrated with memristive devices. This papers goal is to compare and analyze the advantage and disadvantage on the near research on the cognitive machine. Start with the construction of a simple dynamic model of neurons in Section 2, the history of the development of the recognitive machine is introduced in Section 3. Section 4 focusing on the comparison and analysis of researches done by different scholars. Through the comparison of multiple scholars work, improvement of the memory system would be a potential way to improve the recognition system nowadays, and it is discussed in the conclusion.

Mid-infrared analogue polaritonic reversed Cherenkov radiation in natural anisotropic crystals

Cherenkov radiation (CR) excited by fast charges can serve as on-chip light sources with a nanoscale footprint and broad frequency range. The reversed CR, which usually occurs in media with the negative refractive index or negative group-velocity dispersion, is highly desired because it can effectively separate the radiated light from fast charges thanks to the obtuse radiation angle. However, reversed CR at the mid-infrared remains challenging due to the significant loss of conventional artificial structures. Here we observe mid-infrared analogue polaritonic reversed CR in a natural van der Waals (vdW) material (i.e., α-MoO3), whose hyperbolic phonon polaritons exhibit negative group velocity. Further, the real-space image results of analogue polaritonic reversed CR indicate that the radiation distributions and angles are closely related to the in-plane isofrequency contours of α-MoO3, which can be further tuned in the heterostructures based on α-MoO3. This work demonstrates that natural vdW heterostructures can be used as a promising platform of reversed CR to design on-chip mid-infrared nano-light sources.

Graphene/MoS2/SiOx memristive synapses for linear weight update

Memristors for neuromorphic computing have gained prominence over the years for implementing synapses and neurons due to their nano-scale footprint and reduced complexity. Several demonstrations show two-dimensional (2D) materials as a promising platform for the realization of transparent, flexible, ultra-thin memristive synapses. However, unsupervised learning in a spiking neural network (SNN) facilitated by linearity and symmetry in synaptic weight update has not been explored thoroughly using the 2D materials platform. Here, we demonstrate that graphene/MoS2/SiOx/Ni synapses exhibit ideal linearity and symmetry when subjected to identical input pulses, which is essential for their role in online training of neural networks. The linearity in weight update holds for a range of pulse width, amplitude and number of applied pulses. Our work illustrates that the mechanism of switching in MoS2-based synapses is through conductive filaments governed by Poole-Frenkel emission. We demonstrate that the graphene/MoS2/SiOx/Ni synapses, when integrated with a MoS2-based leaky integrate-and-fire neuron, can control the spiking of the neuron efficiently. This work establishes 2D MoS2 as a viable platform for all-memristive SNNs.

MoS2 Synapses with Ultra-low Variability and Their Implementation in Boolean Logic.

Brain-inspired computing enabled by memristors has gained prominence over the years due to the nanoscale footprint and reduced complexity for implementing synapses and neurons. The demonstration of complex neuromorphic circuits using conventional materials systems has been limited by high cycle-to-cycle and device-to-device variability. Two-dimensional (2D) materials have been used to realize transparent, flexible, ultra-thin memristive synapses for neuromorphic computing, but with limited knowledge on the statistical variation of devices. In this work, we demonstrate ultra-low-variability synapses using chemical vapor deposited 2D MoS2 as the switching medium with Ti/Au electrodes. These devices, fabricated using a transfer-free process, exhibit ultra-low variability in SET voltage, RESET power distribution, and synaptic weight update characteristics. This ultra-low variability is enabled by the interface rendered by a Ti/Au top contact on Si-rich MoS2 layers of mixed orientation, corroborated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS). TEM images further confirm the stability of the device stack even after subjecting the device to 100 SET-RESET cycles. Additionally, we implement logic gates by monolithic integration of MoS2 synapses with MoS2 leaky integrate-and-fire neurons to show the viability of these devices for non-von Neumann computing.

Optimizing GaAs nanowire-based visible-light photodetectors

Sole surface passivation for III–V nanowire photodetectors exhibits limited photoresponse improvement. Consequently, a well-customized contact design is crucial. Here, GaAs nanowire-based metal-semiconductor-metal photodetectors via surface treatment and interfacial contact optimization are reported. The passivation strategy inhibits the surface recombination and, importantly, effectively reduces the Fermi-level pinning effect by the redistribution of surface states. It leads to the Schottky barrier height reduced from ∼0.63 to ∼0.36 eV at the Ni/GaAs nanowire contact. The design contributes to the prominently enhanced more than tenfold photoresponsivity and the much-shortened response time, in comparison with the pristine ones. When applying the design to the intrinsic GaAs nanowire photodetector, it demonstrates a responsivity of 4.5 × 104 A/W, a specific detectivity of 3.3 × 1014 Jones, and response time less than 50 ms under 520 nm laser illumination. Additionally, good repeatability of dynamic photo-switching characteristics and stability measured with slight degradation after 2 months are demonstrated. With the same approach, it is found that the responsivity could be further enhanced by over 50 times up to 6.4 × 105 A/W via fermi level adjustment in a p-doped single GaAs nanowire device. Featuring the nanoscale footprint and compact size, the results establish the GaAs nanowire as a promising and competitive candidate for high-performance and reliable nano-photodetection operating in the visible range.

Three-dimensional plasmonic nano-router via optical antennas

Abstract A three-dimensional (3D) nanoscale optical router is a much-desired component in 3D stacked optical integrated circuits. However, existing 3D routers based on dielectric configurations suffer from large footprints and nanoscale routers based on plasmonic antennas only work in a 2D in-plane scene. Here, we propose and experimentally demonstrate cross-layered all-optical 3D routers with nanoscale footprints. Optical slot antenna pairs are used to realize the routing of plasmonic signals between different layers for arbitrary direction in a broadband wavelength range. The routers are also integrated with waveguide directly for exploring further applications. Based on these router elements, a 3D network of optical butterfly interconnection is demonstrated for multi-directional all-optical data communication. The proposed configuration paves the way for optical cross-layer routing on the nanoscale and advances the research and applications for 3D plasmonic circuits with high integration density in the future.

Engineering the Luminescence and Generation of Individual Defect Emitters in Atomically Thin MoS2

Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

Memristors as Candidates for Replacing Digital Potentiometers in Electric Circuits

Digital potentiometers are substantial components for the design of many mixed-signal electronic circuits and systems. Their capability to program resistance value almost instantly provides hardware designers an additional level of freedom. Unfortunately, this feature is limited to DC and lower frequencies, due to parasitic effects. Nowadays, memristors as continuously tunable resistors are becoming candidates for potentiometer successors. Memristors are two-terminal non-volatile devices which have less significant parasitic effects and a wide resistance range. The memristance value can be changed on the fly. Using nanotechnology, memristor implementation has a nanoscale footprint with nanosecond transition between resistive states. In this paper, we present a comparison between the frequency characteristics of digital potentiometers and the only commercially available memristors. Memristor parasitic effects dominate at higher frequencies which extends the bandwidth. In order to present the advantages of memristive circuits, we have analyzed and implemented tunable circuits such as a voltage divider, an inverting amplifier, a high-pass filter, and a phase shifter. A commercially available memristor by KnowM Inc. is used for this purpose. Experimental results obtained by the measurements verify that a memristor has equal or better characteristics than a digital potentiometer. Memristive realizations of voltage dividers and inverting amplifiers have a wider bandwidth, while filters and phase shifters with a memristor have almost identical frequency characteristics as the corresponding realizations with a digital potentiometer.

Wide-angle perfect absorber using a 3D nanorod metasurface as a plasmonic sensor for detecting cancerous cells and its tuning with a graphene layer

We investigate a high-sensitivity plasmonic sensor that uses a hexagonal nanorod array metasurface with for identifying malignant hepatic metastases from healthy liver cells. This designed plasmonic metasurface has some advantages such as nanoscale dimensions, a high figure of merit and sensitivity to the refractive index, and insensitivity to the incident angle for 0° to 60°. With the 3D finite-difference time domain method, we study the output characteristics and the effect of geometrical parameters, materials, and incident angle on the plasmon-induced absorption resonances as well. A sensitivity of 1250 nm per refractive index unit (RIU) can be achieved when the change of the sensing medium refractive index Δn=0.2, and the maximum figure of merit achieved is about 610 RIU−1. Also, graphene metasurfaces are used to obtain tunable characteristics. Our proposed structure not only has a nanoscale footprint of 200×200×50 nm3, but also its plasmon-induced absorption resonances are not sensitive to the incident angle. This device holds great potential for the design of nanosensor devices and perfect absorbers.

Three-Dimensional Polarization-Insensitive Perfect Absorber Using Nanorods Array for Sensing and Imaging

The analysis of a plasmon-induced transparency (PIT) effect in silver metasurface with using a square array of nanorods is numerically and analytically reported. The properties of the structure as a function of geometrical parameters, plasmonic metasurface materials, and incident angles with different polarizations are analyzed to improve the performance of the structure in terms of sensitivity and tunability. A proposed structure can operate with a high value of sensitivity of 1200nm/RIU when the changing of the sensing material refractive index is 0.2RIU, which stems from the high intensity of the electric field in nanorods array. The PIT wavelengths are not sensitive to the incident angle and its polarization, as well. Moreover, the array of nanorods has a nanoscale footprint of 200nm × 200nm × 50nm, which is proper for photonic integrated circuits. This scheme paves the way for designing nanosensor devices with perfect absorbing.

Giant voltage-controlled modulation of spin Hall nano-oscillator damping

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator-based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive to individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42% variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.

Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs

Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize various quantum structures with excellent position and size controllability, utilizing a wide range of materials for heterostructures. In addition, enhancing light extraction and controlling spontaneous emission by modifying their size and shape are possible. Thus, NWs are promising materials for nanoscale light sources applicable from visible to telecommunication bands. In this study, we grew InP/InAsP/InP axial heterostructure NWs, where the InAsP layer was embedded to serve as an active layer, by selective-area growth and demonstrated vertical NW array light-emitting diodes (LEDs) as a step towards realizing on-demand single photon sources. The NW array LEDs showed rectifying characteristics and electroluminescence originating from the embedded InAsP layer in the near-infrared region.

Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons

Plasmonics on metal-dielectric interfaces was widely seen as the main route for miniaturization of components and interconnect of photonic circuits. However recently, ultra-confined surface phonon-polaritonics in high-index chalcogenide films of nanometric thickness has emerged as an important alternative to plasmonics. Here, using mid-IR near-field imaging we demonstrate tunable surface phonon-polaritons in CMOS-compatible interfaces of few-nm thick germanium on silicon carbide. We show that Ge-SiC resonators with nanoscale footprint can support sheet and edge surface modes excited at the free space wavelength hundred times larger than their physical dimensions. Owing to the surface nature of the modes, the sensitivity of real-space polaritonic patterns provides pathway for local detection of the interface composition change at sub-nanometer level. Such deeply subwavelength resonators are of interest for high-density optoelectronic applications, filters, dispersion control and optical delay devices.

Tip- and Plasmon-Enhanced Infrared Nanoscopy for Ultrasensitive Molecular Characterizations

We propose a method for ultrasensitive infrared (IR) vibrational spectroscopy of molecules with nanoscale footprints by combining the tip enhancement of a scattering-type scanning near-field optical microscope (s-SNOM) and the plasmon enhancement of breathing-mode (BM) plasmon resonances of graphene nanodisks (GNDs). To demonstrate this, we develop a quantitative model that is capable of computing accurately the s-SNOM signals of nanoscale samples. With our modeling, we show that the s-SNOM tip can effectively excite gate-tunable BM plasmonic resonances in GNDs with strong field enhancement and sensitive dependence on the size of GND. Moreover, we demonstrate that the intense electric field of tip-excited plasmonic BMs can strongly enhance the IR vibrational modes of molecules. As a result, IR vibrational signatures of individual molecular particles with sizes down to 1--2 nm are readily observable by s-SNOM. Our study sheds light on future ultrasensitive IR biosensing that takes advantage of both the tip and plasmon enhancement.

Sub-Poissonian photon statistics in quantum dot-metal nanoparticles hybrid system with gain media

In this paper, we theoretically demonstrate the sub-Poissonian photon statistics in gain-assisted quantum dot-metal nanoparticles (QD-MNPs) hybrid system with nanoscale footprint. The gain media is introduced to reduce the dissipation of localized surface plasmons and consequently the quality factor of MNPs is improved by adjusting the gain coefficient. Simulated by finite element method (FEM), the Fano resonance is observed in the absorption cross section spectrum of the hybrid system. Considering MNPs and gain media together as a single mode cavity, the system is investigated within the framework of cavity quantum electrodynamics by fitting necessary parameters with FEM. The numerical results show that the coupling between QD and MNPs falls in strong coupling regime and zero delay second-order autocorrelation function g2(0) = 0.356 can be achieved with proper choice of gain coefficient. Moreover, the sub-Poissonian photon statistics can be maintained in a large variation range of gain coefficient and a certain degree of detuning between QD and cavity is allowed.

Multiresonant plasmonics with spatial mode overlap: overview and outlook

Abstract Plasmonic nanostructures can concentrate light and enhance light-matter interactions in the subwavelength domain, which is useful for photodetection, light emission, optical biosensing, and spectroscopy. However, conventional plasmonic devices and systems are typically optimized for the operation in a single wavelength band and thus are not suitable for multiband nanophotonics applications that either prefer nanoplasmonic enhancement of multiphoton processes in a quantum system at multiple resonant wavelengths or require wavelength-multiplexed operations at nanoscale. To overcome the limitations of “single-resonant plasmonics,” we need to develop the strategies to achieve “multiresonant plasmonics” for nanoplasmonic enhancement of light-matter interactions at the same locations in multiple wavelength bands. In this review, we summarize the recent advances in the study of the multiresonant plasmonic systems with spatial mode overlap. In particular, we explain and emphasize the method of “plasmonic mode hybridization” as a general strategy to design and build multiresonant plasmonic systems with spatial mode overlap. By closely assembling multiple plasmonic building blocks into a composite plasmonic system, multiple nonorthogonal elementary plasmonic modes with spectral and spatial mode overlap can strongly couple with each other to form multiple spatially overlapping new hybridized modes at different resonant energies. Multiresonant plasmonic systems can be generally categorized into three types according to the localization characteristics of elementary modes before mode hybridization, and can be based on the optical coupling between: (1) two or more localized modes, (2) localized and delocalized modes, and (3) two or more delocalized modes. Finally, this review provides a discussion about how multiresonant plasmonics with spatial mode overlap can play a unique and significant role in some current and potential applications, such as (1) multiphoton nonlinear optical and upconversion luminescence nanodevices by enabling a simultaneous enhancement of optical excitation and radiation processes at multiple different wavelengths and (2) multiband multimodal optical nanodevices by achieving wavelength multiplexed optical multimodalities at a nanoscale footprint.

Plasmonic modulation and demodulation structure for the future optical WDM devices in communication system

Optical communications is the linchpin of modern communications delivering vast majority of the online traffic worldwide at the terabit-per-second rate. However, an exponential growth of this traffic requires proper increase in transmission rate, which, in turn, puts more pressure on finding new technological solutions to meet these demands. A possible direction of this search is application of plasmonics. Plasmonics has the potential to combine the best properties of both electronic and photonic worlds leading to the development of new units of optical systems in nanoscale footprints. Application of plasmonics in optical communications would lead to integration of plasmonic circuitry with digital electronics, which in turn would open new opportunities in research applications and lay the foundation for the next generation digital technology. This paper is the attempt to make one more step in this direction. Specifically, we propose the structure for plasmonic field modulation and demodulation under two conditions: (1) The work is done for narrow-band coupling conditions and (2) graphene is used as an intermediate layer between the conductor and the cover to increase the coupling efficiency at the 1550-nm wavelength. The results include a unique description of the plasmonic coupling and resonance peak for the proposed structure and analysis of the enhancement in modulation performance caused by the insertion of the graphene layer in the plasmonic structure. The possible applications of the proposed structure are also considered.

Three-dimensional FDTD analysis of a nanostructured plasmonic sensor in the near-infrared range

Finding new ways to access the nanoscale and high-Q-factor plasmonics resonance remains a major challenge in the field of plasmonic metasurfaces. In the present paper, we aim to report a nanoscale gold metasurface containing structure to realize high-quality plasmon-induced transparency (PIT) responses. The properties of the proposed model are numerically investigated with different physical parameters by the three-dimensional finite difference time domain (3D-FDTD) method. For this purpose, the effects of the geometrical parameters, metasurface materials, dielectric constant, and incident angle in the visible to near-infrared regions are studied. To obtain of dynamical tunability of the proposed model, graphene metasurfaces are then utilized. Numerical results show that the proposed devices are able to operate as high-quality PIT sensors with a maximum figure-of-merit of 1090, and sensitivity of 700 nm/refractive index unit for slight change of Δn=0.15, in the refractive index of the dielectric layer, which originates from its ultra-narrow transparency window and strong coupling between dark–bright modes. Moreover, the structure has a nanoscale footprint of 40 nm×60 nm×31 nm. We believe that the proposed sensor can be used as a promising platform for future nanosensing applications, such as nanostructure plasmonic sensors.