Monolithic Transmitter Research Articles

An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna

The design, fabrication, and characterization of a 4.08 mm2 monolithic 82-GHz silicon impact ionization avalanche transit time (IMPATT) transmitter are presented. The vertical IMPATT diode was grown by molecular beam epitaxy and followed by the typical circuit fabrication process. The oscillator design is experimentally well verified both by the Kurokawa condition from impedance matching and by Barkhausen’s criteria from the reflection coefficient aspect, respectively. An 82.5-GHz coplanar waveguide (CPW) patch antenna with 50- $\Omega $ input impedance is monolithically integrated to an IMPATT oscillator with similar working frequency. Under the biasing condition of 25 mA (13.41 V), the $H$ -plane radiation pattern of the monolithic IMPATT transmitter was characterized at 82.17 GHz in an E-band anechoic chamber. From link budget calculation, the equivalent isotropically radiated power of the transmitter chip achieved 18.43 dBm (69.66 mW). With the simulated directive gain (7.35 dBi) of CPW patch antenna and measured CPW interconnect loss (0.57 dB), the output power of transmitter achieved 11.65 dBm (14.62 mW) with dc-to-radio frequency efficiency of 4.36%.

The Development of On-Chip Serial Link Transmitter for MAPS

Most applications of future CMOS Monolithic Active Pixel Sensors (MAPS) require high-speed digital serial data link for data transmission. Commercial monolithic serial transmitters can be found that meet the bandwidth requirements of the MAPS. However, there is no available space for additional chips on the MAPS layers in the detector. To address this issue, a serial transmitter prototype, containing a phase-locked loop (PLL) clock generator, an 8B/10B encoder, a serializer and a low-voltage differential signaling (LVDS) driver was developed. Since the clock is embedded into the data by using serial transmission, the detector material budget due to data transmission is minimized. The serial transmitter prototype is integrated in a sensor chip, MIMOSA26, developed in IPHC (Institut Pluridisciplinaire Hubert-Curien, France). It has been implemented in a 0.35 ?m CMOS technology. This first serial transmitter prototype was designed aiming to transmit data at 160 Mbit/s. Measurements proved our design is fully functional.

Integrated nano-structured silicon waveguides and devices for high-speed optical communications (Invited Paper)

With progress in fabrication technology, integrated photonics plays an increasingly important role in highspeed optical communications, from monolithic transmitters and receivers for advanced optical modulation formats to on-chip subsystems for optical signal processing. We review our recent work on the highly tailorable physical properties of silicon waveguides for communication and signal processing applications, using slot structures. Controllable chromatic dispersion, nonlinearity, and polarization properties of the waveguides are presented, and the enabled wideband wavelength conversion, optical tunable delay, and signal processing of polarization-multiplexing data channels are discussed.

Optoelectronic up-conversion using compact laterally mode-locked diode lasers

In this letter, we demonstrate optoelectronic up-conversion using a new device based on two laterally coupled mode-locked diode lasers. These laterally coupled mode-locked diode lasers have already proven their possibility of being modulated above the intrinsic relaxation oscillation frequency due to lateral mode coupling and transmission of a microwave carrier at such frequencies has been demonstrated. Optoelectronic up-conversion with these devices is achieved through separate injection of the carrier and the modulating signal in each of the coupled emitters, proving the possibility of obtaining a compact, monolithic, and low-cost transmitter for radio-over-fiber systems

SiGe HBT serial transmitter architecture for high speed variable bit rate intercomputer networking

A monolithic transmitter architecture that addresses difficulties in data retiming at high bit rates has been designed and fabricated. It utilises a quarter-frequency multiplexing scheme, a fully symmetric multiplexer and a feedforward interpolated ring voltage controlled oscillator (VCO), to transmit data in excess of 20 Gbit/s. The symmetric multiplexer has full input and output symmetry designed to have the same delay from any input to the output. Each stage in the VCO controls its delay by linearly interpolating the signals from the previous two stages, yielding a VCO tuning range of 3.7 to 5.5 GHz with a phase noise of −90.2 dBc/Hz at 1 MHz. SiGe heterojunction bipolar technology (HBT) technology with an fT of 50 GHz was used in this design.

Single-MMIC four-channel transmitter module for multichannel RF/optical subcarrier multiplexed communications applications

Presents a compact single monolithic microwave integrated circuit (MMIC) transmitter module for four-channel RF/optical subcarrier multiplexed (OSCM) communication applications. The developed module consists of one fully monolithic four-channel OSCM transmitter integrated circuit (IC) and four coupled-line filters. The MMIC is designed and implemented in a commercial 0.6-/spl mu/m GaAs MESFET process and five-stage coupled-line filters are fabricated for each of the four channels on the module board. The module design and bit-error-rate performance are considered. This is the first fully monolithic IC transmitter module for OSCM communications applications.

Development of MMIC-based modules for multichannel RF/optical subcarrier multiplexed communications applications

We present a C-band monolithic microwave integrated circuit (MMIC) transmitter module development for multichannel RF/optical subcarrier multiplexed (OSCM) communication applications. The C-band MMIC transmitter module consists of one fully monolithic four-channel OSCM transmitter IC and four coupled-line filters. This MMIC is designed and implemented in a commercial GaAs MESFET process and coupled line bandpass filters are fabricated on the module board. We present the design and performance of the first fully monolithic IC transmitter module for OSCM packet switched applications.

Asymmetric twin-waveguide 1.55-μm wavelength laser with a distributed Bragg reflector

We demonstrate a single frequency, 1.55 /spl mu/m wavelength laser based on an asymmetric twin-waveguide structure using a single growth step and a simple fabrication process. The external Bragg grating is formed on the passive ridge waveguide, optically coupled to the twin-guide gain section using a low loss, tapered mode transformer. The grating is produced by near-field holographic printing using a phase mask. Output powers >11 mW in a small-spot waveguide with a side-mode suppression ratio >40 dB and a slope efficiency of 0.11 W/A are obtained under pulsed operation. These performance characteristics are comparable to conventional, nonintegrated, conventional discrete DBR lasers, although the twin-waveguide design is compatible with photonic integrated circuits such as monolithic transmitters and WDM coherent receivers.

A broadband free-space millimeter-wave vector transmission measurement system

We report both broadband monolithic transmitter and receiver IC's for MM-wave electromagnetic measurements. The IC's use a nonlinear transmission line (NLTL) and a sampling circuit as a picosecond pulse generator and detector. The pulses are radiated and received by planar monolithic bow-tie antennas, collimated with silicon substrate lenses and off-axis parabolic reflectors. Through Fourier transformation of the received pulse, accurate 30-250 GHz free space gain-frequency and phase-frequency measurements are demonstrated. Systems design considerations are discussed, and a variety of MM-wave broadband transmission measurements are demonstrated. >

2.5 Gb/s transmission over 674 km at multiple wavelengths using a tunable DBR laser with an integrated electroabsorption modulator

We present a distributed Bragg reflector (DBR) laser/modulator photonic integrated circuit capable of transmission over 674 km of conventional fiber at 2.5 Gb/s. Transmission was performed at four wavelengths over a range of >4 nm. The bit error rate (BER) sensitivity achieved at each wavelength varied by less than 1.1 dB. These results produce a record bit rate-distance product at each wavelength of 1.7 Tb.km/s for monolithic transmitters through nondispersion shifted fiber. Such devices are ideal sources for multichannel wavelength-division-multiplexed (WDM) transmission systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

A monolithic Ka-band 0.25 mu m GaAs MESFET transmitter for high volume production

A monolithic Ka-band transmitter consisting of a voltage-controlled oscillator (VCO) and a power amplifier using 0.25 mu m MESFET technology has been developed for high volume production. An output power of 21.5 dBm at 35.4 GHz with a tuning range of 600 MHz has been achieved. Hundreds of these monolithic transmitters have been fabricated, and an RF yield of 40% has ben achieved from the GaAs MMIC pilot line based on the total number of wafers started. The high yield obtained from this high level integration of multifunctional MMIC chips indicates the maturity of the design and processing capability of millimeter-wave (MMW) GaAs MESFET technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

A Saw Stabilized Monolithic Pulse Amplitude Modulated Microtransmitter

A low power SAW stabilized monolithic microtransmitter has been developed. This new device replaces all of the RF circuitry in a low cost transmitter, such as the ones used in wireless security systems. This device makes it possible to meet FCC specifications without costly design iterations. The oscillator in the transmitter is controlled by a third generation SAW resonator which eliminates the need for impedance matching or phase shifting networks in the signal feedback path. This unique type of resonator made the monolithic transmitter design possible. The theory of operation, system architecture, and performance will all be presented in this paper.

A 31-GHz monolithic GaAs mixer/preamplifier circuit for receiver applications

The portion of a monolithic receiver containing integrated Schottky mixer diodes and MESFET'S with microstrip circuitry has been developed and tested at 31 GHz. This work is part of a program to establish the feasibility of monolithic receivers and transmitters at microwave and millimeter-wave frequencies. Receiver designs using high-cutoff frequency diodes in a mixer configuration followed by a MESFET amplifier are capable of operating from microwave through millimeter-wave frequencies. However, the fabrication of monolithic receiver designs requires the integration on the same wafer of devices with different material requirements. We have developed a compatible integration scheme which is fundamental to the fabrication of monolithic receivers at millimeter-wave frequencies. Fabrication and design considerations for the 31-GHz balanced mixer and IF preamplifier are described. Completed monolithic units typically exhibit a conversion gain of 4 dB from the signal frequency of 31 GHz to the IF frequency of 2 GHz. The associated noise figure is typically 11.5 dB.

A micropower monolithic transmitter for single- or multichannel biomedical telemetry

A common-collector micropower monolithic transmitter intended for biomedical telemetry in the 100-MHz range is described.

簡易FM血圧無線伝送装置

Beat-to-beat blood pressure in a free ranging dog within laboratory has been measured by a simple F. M. monolithic transmitter with chronic intra-arterial cannulation. The oscillator was modulated directly by semiconductor pressure transducer changing E base. Center of irradiated frequency was 78MHz. A conventional F. M. radio was used as signal receiver and also as demodulator, since DC signal output could be taken between center of AFC switch and common base. The calibrated DC output was 76.4mV per 100mmHg and linear up to ±300mmHg. Maximum telemetered distance of the system was 30 meters in an ideal condition. Single battery, H-2D, 2.6V survived 130 hours without changing DC output.