Monolithic Image Rejection Research Articles

A 20-31 GHz HIGH IMAGE REJECTION RATIO SUBHARMONIC MIXER

A broadband monolithic image rejection subharmonic mixer using a standard 0.18m CMOS technology is proposed. This circuit is composed of a band-pass fllter with an intermediate frequency (IF) extraction function that can simplify the block diagram of the image rejection mixer. The entire passive circuit is constructed using a broadside coupling structure to achieve a high level of integration. Based on measured results, the proposed mixer exhibits conversion loss of 15.5{18.5dB at a local oscillator (LO) power of 13dBm, whereas the 3dB bandwidth ranges from 20 to 31GHz (43.1%) with a miniature chip dimension of 0:77 £ 0:81mm 2 . The LO-to-radio frequency (RF), 2LO-to-RF, and RF-to-IF isolation levels are higher than 22.5, 42.9, and 34.5dB, respectively. The best image rejection ratio of 29dBc with 20 - phase compensation at 24.5GHz can be achieved.

Design of Ka-band Monolithic Image Rejection Mixer

In this paper, a 30–40 GHz monolithic image rejection mixer is described. The mixer employs two drain LO injection mixer cells, which can perform well even with zero drain bias voltage. Also it employs Lange Coupler for RF quadrature signal generation. The mixer is fabricated by a commercial 0.18-μm pseudomorphic high electron-mobility transistor (pHEMT) process. It achieves image rejection ratio of more than 20.4 dB and conversion loss of less than 12.6 dB in the frequency range of 30 to 38 GHz.

Millimeter-Wave Lange Coupler Design and Its Application in the Monolithic Image Rejection Mixer Design

This paper reports on the design of a Ka-band monolithic Lange coupler and its application in the monolithic fourth-harmonic image rejection mixer. Detailed design and analysis using Ansoft-HFSS simulator have been carried out. The simulated results of the Lange Coupler show the insert loss is better than −3.64 dB; the amplitude balance is less than 0.55 dB and the phase balance is less than 0.65° from the 90° phase difference over the 30 to 40 GHz frequency range. The Lange Coupler is employed in a monolithic image rejection mixer that is fabricated by a commercial 0.18-μm pseudomorphic high electron-mobility transistor (pHEMT) process. The chip size is 1.4 mm × 1.9 mm. The image rejection ratio (IMR) is from 15 to 34 dB in the RF frequency range of 30 to 40 GHz.

High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips

High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band. >

A low-current Ku-band GaAs monolithic image rejection down-converter

A single-chip image rejection downconverter has been designed, fabricated. and tested for broadcast satellite receivers operating in the 11.7- to 12.2-GHz range. The downconverter consists of an RF low-noise amplifier (LNA), a filter-type image rejection mixer (IRM), and an intermediate frequency amplifier (IFA). It receives 11.7- to 12.2-GHz RF signals and down converts to 1.0- to 1.5-GHz IF signals with an external local oscillator. Since the filter integrated on the downconverter produces an image rejection of more than 30 dB, the downconverter requires no off-chip circuits for the image rejection. A conversion gain of 37+or-1 dB and a noise figure of less than 3.5 dB have been achieved over the RF frequency range. The current dissipation is only 40 mA, and the chip size is 2.8 mm*2.8 mm*0.45 mm. >

A low current GaAs monolithic image rejection downconverter for X-band broadcast satellite applications

The design, fabrication, and performance of a fully integrated X-band monolithic image rejection downconverter are described. The downconverter consists of a low-noise amplifier, an image rejection mixer, and an IF amplifier. The downconverter receives RF signals between 11.7 and 12.3 GHz and converts them down to IF frequency between 1.0 and 1.6 GHz. A conversion gain of 46+or-1 dB, a noise figure of less than 3.3 dB, and an image rejection of 30 dB have been achieved over the RF frequency range. The chip size of the downconverter is 1.9 mm*2.2 mm, and its current dissipation is only 43 mA. Since the downconverter has sufficient image rejection due to an on-chip bandstop filter, it requires no off-chip circuits. Therefore, the use of this downconverter in X-band broadcast satellite applications will lead to a great reduction in size and current dissipation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>