Monolayer Thin Transition Metal Dichalcogenides Research Articles

Light‐Induced Ferroelectric Modulation of p‐n Homojunctions in Monolayer MoS2

AbstractThe association of 2D materials and ferroelectrics offers a promising approach to tune the optoelectronic properties of atomically thin Transition Metal Dichalcogenides (TMDs). In this work, the combined effect of ferroelectricity and light on the optoelectronic properties of monolayer (1L)‐MoS2 deposited on periodically poled lithium niobate crystals is explored. Using scanning micro‐photoluminescence, the effect of excitation intensity, scanning direction, and domain walls on the 1L‐MoS2 photoluminescence properties is analyzed, offering insights into charge modulation of MoS2. The findings unveil a photoinduced charging process dependent on the ferroelectric domain orientation, in which light induces charge generation and transfer at the monolayer‐substrate interface. This highlights the substantial role of light excitation in ferroelectrically‐driven electrostatic doping in MoS2. Additionally, the work provides insights into the effect of the strong, nanometrically confined electric fields on LiNbO3 domain wall surfaces, demonstrating precise control over charge carriers in MoS2, and enabling the creation of deterministic p‐n homojunctions with exceptional precision. The results suggest prospects for novel optoelectronic and photonic application involving monolayer TMDs by combining light‐matter interaction processes and the surface selectivity provided by ferroelectric domain structures.

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2 heterostructure

Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2 heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2 HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2 plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.

Direct Imaging of Carrier Funneling in a Dielectric Engineered 2D Semiconductor.

In atomically thin transition-metal dichalcogenides (TMDCs), the environmental sensitivity of the strong Coulomb interaction offers promising approaches to create spatially varying potential landscapes in the same continuous material by tuning its dielectric environment. Thus, allowing for control of transport. However, a scalable and CMOS-compatible method for achieving this is required to harness these effects in practical applications. In addition, because of their ultrashort lifetime, observing the spatiotemporal dynamics of carriers in monolayer TMDCs, on the relevant time scale, is challenging. Here, we pattern and deposit a thin film of hafnium oxide (HfO2) via atomic layer deposition (ALD) on top of a monolayer of WSe2. This allows for the engineering of the dielectric environment of the monolayer and design of heterostructures with nanoscale spatial resolution via a highly scalable postsynthesis methodology. We then directly image the transport of photoexcitations in the monolayer with 50 fs time resolution and few-nanometer spatial precision, using a pump probe microscopy technique. We observe the unidirectional funneling of charge carriers, from the unpatterned to the patterned areas, over more than 50 nm in the first 20 ps with velocities of over 2 × 103 m/s at room temperature. These results demonstrate the possibilities offered by dielectric engineering via ALD patterning, allowing for arbitrary spatial patterns that define the potential landscape and allow for control of the transport of excitations in atomically thin materials. This work also shows the power of the transient absorption methodology to image the motion of photoexcited states in complex potential landscapes on ultrafast time scales.

High‐throughput screening of phase‐engineered atomically thin transition‐metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit

AbstractA main challenge for the development of two‐dimensional devices based on atomically thin transition‐metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions (MSJs) with low contact resistance and high charge transport capability. However, traditional metal–TMD junctions usually suffer from strong Fermi‐level pinning (FLP) and chemical disorder at the interfaces, resulting in weak device performance and high energy consumption. By means of high‐throughput first‐principles calculations, we report an attractive solution via the formation of van der Waals (vdW) contacts between metallic and semiconducting TMDs. We apply a phase‐engineering strategy to create a monolayer TMD database for achieving a wide range of work functions and band gaps, hence offering a large degree of freedom to construct TMD vdW MSJs with desired contact types. The Schottky barrier heights and contact types of 728 MSJs have been identified and they exhibit weak FLP (−0.62 to −0.90) as compared with the traditional metal–TMD junctions. We find that the interfacial interactions of the MSJs bring a delicate competition between the FLP strength and carrier tunneling efficiency, which can be utilized to screen high‐performance MSJs. Based on a set of screening criteria, four potential TMD vdW MSJs (e.g., NiTe2/ZrSe2, NiTe2/PdSe2, HfTe2/PdTe2, TaSe2/MoTe2) with Ohmic contact, weak FLP, and high carrier tunneling probability have been predicted. This work not only provides a fundamental understanding of contact properties of TMD vdW MSJs but also renders their huge potential for electronics and optoelectronics.image

Detection of dielectric screening effect by excitons in two-dimensional semiconductors and its application

Atomically thin transition metal dichalcogenides (TMDCs) like MX<sub>2</sub> (M = W or Mo, X = S or Se) are well-known examples of two-dimensional (2D) semiconductors. They have attracted wide and long-lasting attention due to the strong light-matter interaction and unique spin-valley locking characteristics. In the 2D limit, the reduced dielectric screening significantly enhances the Coulomb interaction. The optical properties of monolayer TMDCs are thus dominated by excitons, the tightly bound electron-hole pairs. In this work, we briefly overview the history and recent research progress of optical spectroscopy studies on TMDCs. We first introduce the layer-dependent band structure and the corresponding modifications on optical transitions, and briefly mention the effects of external magnetic fields and the charge doping on excitons. We then introduce a novel sensing technique enabled by the sensitivity of excitons to the dielectric environment. The exciton excited states (Rydberg states) observed in monolayer TMDCs have large Bohr radii (> few nm), where the electric field lines between electron-hole pairs well extends out of the material. Hence the Coulomb interaction (which affects the quasiparticle band gap and exciton binding energies) in the monolayer TMDC is sensitive to the dielectric environment, making the excitons in 2D semiconductor an efficient quantum sensor in probing dielectric properties of the surroundings. The method is of high spatial resolution and only diffraction limited. We enumerate the applications of monolayer WSe<sub>2</sub> dielectric sensor in detecting the secondary Dirac point of graphene induced by the graphene-hBN superlattice potential, as well as the fractional correlated insulating states emerging in WS<sub>2</sub>/WSe<sub>2</sub> moiré superlattices. Meanwhile, a unified framework for describing the many-body interactions and dynamical screenings in the system is still lacking. Future theoretical and experimental efforts are needed for a complete understanding. Finally, we further discuss the perspectives and potential applications of this non-destructive and efficient dielectric sensing method.

Substitutional oxygen activated photoluminescence enhancement in monolayer transition metal dichalcogenides

Atomically thin transition metal dichalcogenides (TMDCs) are intriguing semiconductors for photonics and optoelectronics, and therefore enhancing their photoluminescence (PL) efficiency is crucial for these applications. Many efforts have been contributed to enhancing the PL performance of monolayer TMDCs, yet the complexity between the microstructure and the PL efficiency has hindered the manipulation of their PL properties. Here we demonstrate that the PL intensity of the monolayer TMDC can be enhanced by nearly one order of magnitude with a ∼20% narrower spectral linewidth after a pre-activation plateau using laser irradiation in ambient environment. Combined experimental and theoretical studies reveal that low-power laser irradiation generates many sulfur vacancy clusters, which are subsequently filled up by oxygen, and the lattice substitutional oxygen clusters induce the dramatic PL enhancement of monolayer WS2. Such PL enhancement phenomenon is found to be universal for other monolayer TMDCs, and thus would benefit their versatile optical applications.

Manipulating single-photon emitter radiative lifetime in transition-metal dichalcogenides through Förster resonance energy transfer to graphene

Structural defects can crucially impact the optical response of monolayer (ML) thick materials as they enable trapping sites for excitons. These trapped excitons appear in photoluminescence spectra as new emissions below the free bright exciton and it can be exploited for single photon emissions (SPE). In this work we outline criteria, within our frame work, by which single photon emission can be detected in two dimensional materials and we explore how these criteria can be fulfilled in atomically thin transition metal dichalcogenides (TMD). In particular, we model the effect of defects, in accordance with the most common experimental realisations, on the spatial autocorrelation function of the random disorder potential. Moreover, we provide a way to control the radiative lifetime of these emissions by a hybride heterostructrue of the ML TMD with a graphene sheet and a dielectric spacer that enables the Forster resonance energy transfer process. Our work predict that the corresponding SPE quenched radiative lifetime will be in the picosecond range, this time scale is in good agreement with the recently measured exciton lifetime in this heterostructures

Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

Chemical vapour deposition (CVD) growth is capable of producing multiple single-crystal islands of atomically thin transition metal dichalcogenides (TMDs) over large areas. Subsequent merging of perfectly epitaxial domains can lead to single-crystal monolayer sheets, a step towards scalable production of high quality TMDs. For CVD growth to be effectively harnessed for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date, characterisation has been limited to sub-0.1-mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of monolayer TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to ×20 magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm × 5.0 mm in size, and MoSe2–WS2 on SiO2/Si, 11.2 mm × 5.8 mm in size. Two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.

Direct optical-structure correlation in atomically thin dichalcogenides and heterostructures

Atomically thin transition metal dichalcogenides (TMDs) have distinct opto-electronic properties including enhanced luminescence and high on-off current ratios, which can be further modulated by making more complex TMD heterostructures. However, resolution limits of conventional optical methods do not allow for direct optical-structural correlation measurements in these materials, particularly of buried interfaces in TMD heterostructures. Here we use, for the first time, electron beam induced cathodoluminescence in a scanning transmission electron microscope (CL-STEM) to measure optical properties of monolayer TMDs (WS2, MoS2 and WSSe alloy) encapsulated between layers of hBN. We observe dark areas resulting from localized (~ 100 nm) imperfect interfaces and monolayer folding, which shows that the intimate contact between layers in this application-relevant heterostructure is required for proper inter layer coupling. We also realize a suitable imaging method that minimizes electron-beam induced changes and provides measurement of intrinsic properties. To overcome the limitation of small electron interaction volume in TMD monolayer (and hence low photon yield), we find that encapsulation of TMD monolayers with hBN and subsequent annealing is important. CL-STEM offers to be a powerful method to directly measure structure-optical correspondence in lateral or vertical heterostructures and alloys.

Interacting polariton fluids in a monolayer of tungsten disulfide.

Atomically thin transition metal dichalcogenides (TMDs) possess a number of properties that make them attractive for realizing room-temperature polariton devices1. An ideal platform for manipulating polariton fluids within monolayer TMDs is that of Bloch surface waves, which confine the electric field to a small volume near the surface of a dielectric mirror2-4. Here we demonstrate that monolayer tungsten disulfide can sustain Bloch surface wave polaritons (BSWPs) with a Rabi splitting of 43 meV and propagation lengths reaching 33 μm. In addition, we show strong polariton-polariton nonlinearities within BSWPs, which manifest themselves as a reversible blueshift of the lower polariton resonance. Such nonlinearities are at the heart of polariton devices5-11 and have not yet been demonstrated in TMD polaritons. As a proof of concept, we use the nonlinearity to implement a nonlinear polariton source. Our results demonstrate that BSWPs using TMDs can support long-range propagation combined with strong nonlinearities, enabling potential applications in integrated optical processing and polaritonic circuits.

Optical fingerprint of non-covalently functionalized transition metal dichalcogenides

Atomically thin transition metal dichalcogenides (TMDs) hold promising potential for applications in optoelectronics. Due to their direct band gap and the extraordinarily strong Coulomb interaction, TMDs exhibit efficient light-matter coupling and tightly bound excitons. Moreover, large spin orbit coupling in combination with circular dichroism allows for spin and valley selective optical excitation. As atomically thin materials, they are very sensitive to changes in the surrounding environment. This motivates a functionalization approach, where external molecules are adsorbed to the materials surface to tailor its optical properties. Here, we apply the density matrix theory to investigate the potential of non-covalently functionalized monolayer TMDs. Considering exemplary molecules with a strong dipole moment, we predict spectral redshifts and the appearance of an additional side peak in the absorption spectrum of functionalized TMDs. We show that the molecular characteristics, e.g. coverage, orientation and dipole moment, crucially influence the optical properties of TMDs, leaving a unique optical fingerprint in the absorption spectrum. Furthermore, we find that the molecular dipole moments open a channel for coherent intervalley coupling between the high-symmetry K and points which may create new possibilities for spin-valleytronics application.

Generation and Evolution of Spin-, Valley-, and Layer-Polarized Excited Carriers in Inversion-Symmetric WSe_{2}.

We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of the transition metal dichalcogenide (TMDC) WSe_{2}. Employing time- and angle-resolved photoelectron spectroscopy (trARPES) and complementary time-dependent density functional theory (TDDFT), we observe spin-, valley-, and layer-polarized excited state populations upon excitation with circularly polarized pump pulses, followed by ultrafast (<100 fs) scattering of carriers towards the global minimum of the conduction band. TDDFT reveals the character of the conduction band, into which electrons are initially excited, to be two-dimensional and localized within individual layers, whereas at the minimum of the conduction band, states have a three-dimensional character, facilitating interlayer charge transfer. These results establish the optical control of coupled spin-, valley-, and layer-polarized states in centrosymmetric materials with locally broken symmetries and suggest the suitability of TMDC multilayer and heterostructure materials for valleytronic and spintronic device concepts.

Excitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuits

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication at nanometer scales. A major challenge to this integration is the identification of a suitable material. After discussing the material aspect of the challenge, we identified atomically thin transition metal dichalcogenides (TMDs) as a perfect material platform to implement the circuit. The selection of TMDs is based on their very distinct property: monolayer TMDs are able to emit and absorb light at the same wavelength determined by direct exciton transitions. To prove the concept, we fabricated simple devices consisting of silver nanowires as plasmonic waveguides and monolayer TMDs as active optoelectronic media. Using photoexcitation, direct optical imaging and spectral analysis, we demonstrated generation and detection of surface plasmon polaritons by monolayer TMDs. Regarded as novel materials for electronics and photonics, transition metal dichalcogenides are expected to find new applications in next generation integrated circuits.

Utilization of monolayer MoS2 in Bragg stacks and metamaterial structures as broadband absorbers

We numerically study the possibility of using atomically thin transition metal dichalcogenides (TMDs) for applications requiring broadband absorption in the visible range of the electromagnetic spectrum. We demonstrate that when monolayer TMDs are positioned into a finite-period of multilayer Bragg stack geometry, they make broadband, wide-angle, almost polarization-independent absorbers. In our study, we consider molybdenum disulfide (MoS2) and silicon dioxide (SiO2) as semiconducting and dielectric thin film of alternate high- and low- index films, respectively. By optimizing the thickness of the SiO2 film, we find that monolayer MoS2 based Bragg stacks can absorb 94.7% of the incident energy in the visible (350–700nm). Similar structures can be engineered to make perfect reflectors for saturable absorption applications. We also demonstrate that bandwidth of metamaterial absorbers can be expanded using monolayer TMDs.