The demand for increased miniaturization of integratedcircuits has opened the way to the emerging field of molecularelectronics. Recent experimental studies have established thatsingle molecules or a finite ensemble of self-assembledmolecules can perform the basic functions of conventionalelectronic components (i.e., transistors, wires and diodes). Inparticular, it has been demonstrated that molecular wiresinserted into nanopores can be used as active elements for thefabrication of resonant tunnelling diodes (RTDs), whose I/Vcharacteristics reveal a negative differential resistance (NDR)behaviour (i.e., a negative slope in the I/V curve). Here, weprovide a detailed quantum-chemical description of a possiblemechanism leading to NDR in polyphenylene-based molecular wiresincorporating saturated spacers. This mechanism can beunderstood from the evolution of the molecular wire one-electronstructure upon application of a static electric field alignedalong the molecular axis, which simulates the driving voltageapplied between the two electrodes in the RTD devices. The mainparameters controlling the NDR behaviour can be fine tunedthrough molecular engineering of the wires.
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