Thin-film metal coatings are an important element of optoelectronic devices. In particular, such metal coatings are a defining component of the sensitive layer of various sensors in which the specified surface morphology of the metal coating determines the necessary optoelectronic properties, as is observed, for example, in the case of substrates for SERS (Enhanced Surface Raman Scattering) or SPR (Surface Plasmon Resonance). The highest technological interest for optoelectronic applications is caused by thin silver films due to their well-known remarkable properties, in particular, due to the high value of the extinction coefficient in such a film, as well as due to the presence of an intense narrow absorption band of surface plasmon resonance. In the presented publication original approaches to surface treatment of thin silver films with etching solutions containing compounds characterized by specific oxidative-reductive and complexative property as to silver have been considered. Comparative analysis of the obtained results concerning changes in mass and topography of silver electrodes allowed grounding the mixture choice for microstructural profiling (etching solution M) and nanopolishing (etching solution N) of thin silver film. The physicochemical mechanisms which cause the observed processes have been considered. The etching nature is shown to depend on the oxidation level of redox element involved to the etching solution. Also, it depends on the presence of water-soluble complexation ligands in the solution. The conception that etching composition contained component with intermediate oxidation level in redox element exposes a "softer" effect on the etching topography in thin silver film has been proposed. The considered condition determines the possibility for chemical nanopolishing of thin silver film. The study in surface structural changes has been an integral part of nanoscale research, therefore, the obtained results have a practical value in the nanostructure formation which is the main part in modern acoustics and optoelectronics.
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