Model Of IGBT Module Research Articles

Determining the Self-Thermal Impedances of Power Transistors and Diodes of an IGBT Module Based on Its 3D Model

An approach to determine self-thermal impedances for construction of a thermal model of a power IGBT module based on the electrothermal analogy method has been considered. Unlike the conventional method, the suggested approach takes into account a change in the thermal resistances depending on the location of a power semiconductor device in the IGBT module. The thermal parameters to construct the model of a power module based on the electrothermal analogy were determined by the finite element method using a 3D model of the IGBT module in the ANSYS environment. The suggested approach is intended to improve the quality of prediction of temperature of chips in the power module under conditions close to operating ones.

Temperature protection of frequency converter based on dynamic thermal model of IGBT module

A procedure enabling the calculation of the chip temperature of an IGBT module operating as a component of a frequency converter is presented. The procedure is based on information regarding the inverter’s instantaneous output currents, input voltage, and control signals vector. The heat model of the IGBT module that enables one to calculate the instantaneous temperatures of a chip in real time is examined. Thermal protection based on the heat model is also examined. The results of simulation, full-scale experimentation, and commercial introduction are given.