Model-based Sub-resolution Assist Feature Research Articles

Sub-resolution assist feature placement with generative adversarial network

Background: As the design layout of integrated circuits (ICs) is continually scaling down, sub-resolution assist features (SRAF) have been extensively used in resolution enhancement technique applications to enhance lithography printing fidelity and widen the manufacturing process window (PW). With conventional SRAF insertion techniques, rule-based SRAF (RB-SRAF) and model-based SRAF (MB-SRAF) methods have since been widely adopted. Aim: The typical RB-SRAF is an efficient method to generate SRAFs consistently for simple designs but cannot be optimized for multiple critical patterns or complex layout schemes. Although MB-SRAF is able to achieve better PW as well as reducing conflicts between placement rules and clean-up rules, many iterations for convergence and extremely high computational costs are required. The explosion of machine learning techniques could facilitate the complex processes of mask optimization, such as SRAF insertion. Approach: Generative adversarial network was studied on a Via layer of advanced 3D NAND flash memory, by training target images and Inverse Lithography Technology (ILT) images of target patterns. GAN models, pix2pix, and CycleGAN, were first trained and then utilized to synthesize realistic ILT images. Results: These ILT images were eventually translated to polygons of SRAF with simplification process and mask manufacturing rules check constraints. The simulation results demonstrate that CycleGAN approach can place SRAF with comparable performance to mask optimization (MO) result which was optimized by the Tachyon source-mask optimizer (SMO). Conclusions: Methodologies of SRAF placement based on GANs were demonstrated in this paper. While traditional MO approach showed the best lithography performance, CycleGAN in particular was close behind and had much better performance than conventional RB-SRAF approach, whilst achieving good stability for different layout environments. Most importantly, the efficiency of SRAF insertion can be enhanced significantly through GANs.

GAN-SRAF: Subresolution Assist Feature Generation Using Generative Adversarial Networks

As the integrated circuits (ICs) technology continues to scale, resolution enhancement techniques (RETs) are mandatory to obtain high manufacturing quality and yield. Among various RETs, subresolution assist feature (SRAF) generation is a key technique to improve the target pattern quality and lithographic process window. While model-based SRAF insertion techniques have demonstrated high accuracy, they usually suffer from high computational cost. Therefore, more efficient techniques that can achieve high accuracy while reducing runtime are in strong demand. In this article, we leverage the recent advancement in machine learning for image generation to tackle the SRAF insertion problem. In particular, we propose a new SRAF insertion framework, GAN-SRAF, which uses generative adversarial networks (GANs) to generate SRAFs directly for any given layout. Our proposed approach incorporates a novel layout to image encoding using multichannel heatmaps to preserve the layout information and facilitate layout reconstruction. Our experimental results demonstrate ${\sim }14.6\times $ reduction in runtime when compared to the previous best machine learning approach for SRAF generation, and ${\sim }144\times $ reduction compared to the model-based approach, while achieving comparable quality of results.

Subresolution Assist Feature Generation With Supervised Data Learning

Subresolution assist feature (SRAF) generation is a very important resolution enhancement technique to improve yield in modern semiconductor manufacturing process. Model-based and rule-based approaches are widely adopted in the semiconductor industry. The model-based SRAF generation can achieve a high accuracy but it is known to be time-consuming and it is hard to obtain consistent SRAFs on the same layout pattern configurations. The rule-based SRAF generation is highly technology dependent and it is becoming extremely difficult to render high-quality results in advanced technology nodes. This paper proposes supervised data learning techniques for fast yet consistent SRAF generation with high-quality results. We first propose the constrained concentric circle with area sampling scheme for feature extraction. Illumination source symmetry-based feature compaction technique is further invented to reduce the training data set size and achieve consistent SRAF predictions. Using accurate model-based SRAFs as training data, classification models based on logistic regression (LGR) and support vector machine are calibrated for SRAF predictions. Moreover, the probability maximum prediction is proposed to generate manufacturing-friendly SRAFs with a greedy simplification scheme. We compare support vector machine and LGR models by embedding into an entire mask optimization flow, where the support vector machine model obtains better lithographic performance. Experimental results demonstrate that, compared with the commercial Calibre tool, supervised data learning techniques for SRAF generation obtain significant speed up (>3X for a ${100~{ {{\mathrm{um}}} }^{2}}$ layout clip) and comparable lithographic performance in terms of edge placement error and process variation band.