The thermal agitation plays a vital role in tunability of optoelectronic, structural and chemical characteristics of the temperature sensitive materials. Graphene enables the THz optics, due to its unprecedent controlling characteristics over the traditional materials. The influence of temperature on the monolayer graphene is very negligible due to its low free charge carrier density, to enhance the thermal sensitivity of graphene, the graphene loaded temperature sensitive material interface has been proposed. A theoretical analysis has been carried out on temperature dependent propagation characteristics of electromagnetic surface waves supported by the graphene loaded semi-infinite indium antimonide (InSb). The InSb has been taken as temperature sensitive material. The Drude model has been used for the modeling of InSb in the THz region while the modeling of the graphene has been done by random phase approximation-based Kubo’s formulism. To realize the graphene loaded indium antimonide interface, the impedance boundary conditions (IBCs) have been employed. The numerical analysis has been conducted to analyze the influence of temperature on the characteristics of electromagnetic surface waves i.e., dispersion curve, effective mode index (Neff), penetration depth (δ), propagation length (Lp), phase speed (Vp) and field profile, propagating along the graphene loaded InSb. In all the numerical results, the temperature variation has been considered from 200 to 350 K. It has been concluded that the graphene–InSb interface provides more temperature assisted tunability to the interfacial surface modes, commonly known as surface waves, as compared to monolayer graphene. Further, the graphene parameters can play a vital role in the dynamical tuning of electromagnetic surface waves in THz to IR frequency range. The numerically computed results have potential applications in designing of thermo-optical waveguides, temperature assisted communication devices, thermo-optical sensors and near field thermal imaging platforms.
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