Hole Mobility Research Articles

Computational Screening Two-Dimensional Conjugated Microporous Polymer Applied in Perovskite Solar Cells.

A two-dimensional (2D) conjugated microporous polymer with a structure of 2D nanosheets has been synthesized. Theoretical calculations and experimental results reveal that the Fermi level of this 2D polymer aligns well with perovskite absorber, and its conduction band is high enough to block electron transport into the anode. This 2D polymer is used to modify the hole transport layer, significantly improving its photoelectric properties, including enhanced hole mobility, matched energy level, and reduced recombination. Furthermore, the 2D polymer exhibits a mesoporous structure, allowing perovskite to fill into its loose framework, increasing the hole export area and providing a large hole transport flux. As a result, the efficiency of inverted perovskite solar cells enhances to 24.64 % from 21.17 % of control device without 2D conjugated microporous polymer. Given that this material can be synthesized on a large scale, this work has significant implications for the future development of 2D polymers in perovskite solar cells, potentially accelerating industrialization.

First-principles investigation of microscopic mechanisms underlying hole mobilities in diamond, silicon, and germanium

First-principles investigation of microscopic mechanisms underlying hole mobilities in diamond, silicon, and germanium

High-Performance Organic Field-Effect Transistors and Inverters with Good Flexibility and Low Operating Voltage.

Organic field-effect transistors (OFETs) with good flexibility and low operating voltage, are of great meaning for the low power stretchable and wearable electronic devices. The operating voltage and flexibility are easily affected by the dielectric layers in the OFETs. Bilayer dielectrics comprising both high- and low-permittivity (k) insulating polymers, have been reported. The flexible bilayer dielectrics can combine the advantages of both insulating polymers, which are high charge carriers from low-k polymers and low operating voltage from high-k polymers. However, the effect of film thicknesses in the bilayer dielectrics on the OFET performance is seldom investigated. Here, bilayer dielectrics comprising high-k polyvinyl alcohol (PVA) and low-k polymethylmethacrylate (PMMA) were fabricated. And PVA/PMMA bilayers with three different PVA film thicknesses are carefully investigated. The 300 nm PVA/100 nm PMMA bilayer dielectric makes the pentacene OFETs show the highest hole mobility of 1.24 cm2V-1s-1 and the corresponding inverters give a high voltage gain of 40 and a noise margin of 2.3 V (77% of 1/2 VDD) at low operating voltage of 6 V. Both the pentacene transistors and the inverters still work properly under bending radium of 5.85 mm, proving the good prospects of the PVA/PMMA bilayer dielectric in practical applications.

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics.

2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short-channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n-type transport characteristics in most 2D semiconductors, while unstable and unsustainable p-type doping by various strategies hinders their application in many areas, such as complementary metal-oxide-semiconductor (CMOS) devices. In this study, an intralayer/interlayer codoping strategy is introduced that stabilizes p-type doping in 2D semiconductors. By incorporating oppositely charged ions (F and Li) with the intralayer/interlayer of 2D semiconductors, remarkable p-type doping in WSe2 and MoTe2 with air stability up to 9 months is achieved. Notably, the hole mobility presents a 100-fold enhancement (0.7 to 92 cm2 V-1 s-1) with the codoping procedure. Structural and elemental characterizations, combined with theoretical calculations validate the codoping mechanism. Moreover, a CMOS inverter and more complex logic functions such as NOR and XNOR, as well as large-area device arrays are demonstrated to showcase its applications and scalability. These findings suggest that stable and straightforward intralayer/interlayer codoping strategy with charge-space synergy holds the key to unlocking the potential of 2D semiconductors in complex and scalable device applications.

Tailored Polymer Hole-Transporting Materials with Multisite Passivation Functions for Effective Buried-Interface Engineering of Inverted Quasi-2D Perovskite Solar Cells.

Although quasi-2D Ruddlesden‒Popper (RP) perovskite exhibits advantages in stability, their photovoltaic performance are still inferior to 3D counterparts. Optimizing the buried interface of RP perovskite and suppress energetic losses can be a promising approach for enhancing efficiency and stability of inverted quasi-2D RP perovskite solar cells (PSCs). Among which, constructing polymer hole-transporting materials (HTMs) with defect passivation functions is of great significance for buried-interface engineering of inverted quasi-2D RP PSCs. Herein, by employing side-chain tailoring strategy to extend the π-conjugation and regulate functionality of side-chain groups, target polymer HTMs (PVCz-ThSMeTPA and PVCz-ThOMeTPA) with high mobility and multisite passivation functions are achieved. The presence of more sulfur atom-containing groups in side-chain endows PVCz-ThSMeTPA with increased intra/intermolecular interaction, appropriate energy level, and enhanced buried interfacial interactions with quasi-2D RP perovskite. The hole mobility of PVCz-ThSMeTPA is up to 9.20×10-4 cm2 V-1 S-1. Furthermore, PVCz-ThSMeTPA as multifunctional polymer HTM with multiple chemical anchor sites for buried-interface engineering of quasi-2D PSCs can enable effective charge extraction, defects passivation, and perovskite crystallization modulation. Eventually, the PVCz-ThSMeTPA-based inverted quasi-2D PSC achieves a champion power conversion efficiency of 22.37%, which represents one of the highest power conversion efficiencies reported to date for quasi-2D RP PSCs.

Halogen-Bonded Hole-Transport Material Enhances Open-Circuit Voltage of Inverted Perovskite Solar Cells.

Interfacial properties of a hole-transport material (HTM) and a perovskite layer are of high importance, which can influence the interfacial charge transfer dynamics as well as the growth of perovskite bulk crystals particularly in inverted structure. The halogen bonding (XB) has been recognized as a powerful functional group to be integrated with new small molecule HTMs. Herein, a carbazole-based halo (iodine)-functional HTM (O1), is synthesized for the first time, demonstrating a high hole mobility and suitable energy levels that align well with those of perovskites. The strong interaction between O1 and perovskite, i.e., I···I-, induces the formation of an ordered interlayer, which are verified by both theoretical and experimental studies. Compared to the reference HTM (O2) without any halo-function, the XB-induced interlayer effectively enhances the interfacial charge extraction efficiency, while significantly hindering the non-radiative charge recombination by reducing the surface traps upon the strong passivation effect. This is reflected as a big increase in the open-circuit voltage by up to 114mV in the fabrication of inverted devices with the highest power conversion efficiency of 22.34%. Moreover, the ordered XB-driven interlayer at the interface of O1 and perovskite is mainly responsible for the extended lifespan under the operational conditions.

Hole diffusion length and mobility of a long wavelength infrared InAs/InAsSb type-II superlattice nBn design

We demonstrated high-performance 8.9 μm cutoff wavelength nBn InAs/InAsSb type-II strained-layer superlattice (T2SL). These detectors exhibit a long minority carrier (hole) lifetime of 1.2 μs at 80 K, high quantum efficiency of 40% for back-side illuminated devices without antireflection coating, and low dark current density of 4.6 × 10−6 A/cm2 at 80 K. We measured absorption, minority carrier (hole) lifetime, quantum efficiency, and spectral response as a function of the temperature and applied bias. We investigated the temperature dependence of the hole diffusion length and mobility and found that their values increase with temperature from 1.3 μm and 6.5 cm2/Vs at 30 K to 6.5 μm and 36 cm2/Vs at T = 90 K. We compared the measured diffusion length and mobility of holes in long-wavelength infrared (LWIR) T2SL with these parameters of a high-performance mid-wavelength infrared (MWIR) T2SL. Unexpectedly, hole mobility in LWIR T2SL was found to be higher than in MWIR that is contrary to the theoretical predictions.

Band order reversal and valley engineering driving to dual high electron and hole mobility in strained monolayer BS

Strain engineering is an effective method to tune the physical properties of materials. In this work, we found that applying 5% biaxial compression to monolayer boron sulfur can simultaneously induce a band order reversal of valence bands and valley engineering of conduction bands. This change significantly enhances the room temperature intrinsic mobility, boosting it from 2 to 260 cm2 V−1 s−1 for holes and 63 to 543 cm2 V−1 s−1 for electrons. The high hole mobility surpasses that of bulk GaN and silicon. We further demonstrate that the valence band order reversal not only lifts the px/y state above the pz states, giving to a more dispersive highest valence band, and thus smaller electron scattering channels and hole effective mass, but also shifts the stronger σz bonding to weaker π-bonding characteristics, resulting in smaller electron–phonon coupling strength. Those combined effects results in a substantial increase in hole mobility.

Dopant-Free Hole Transport Material Based on Non-Covalent Interaction for Efficient Perovskite Solar Cells.

Hole transport materials (HTMs) have a critical impact on the performance of perovskite solar cells (PSCs). Especially, the dopant-free HTMs could avoid the usage of hygroscopic dopants and reduce costs, which are important for device stability. Most of the current organic dopant-free HTMs are polycyclic aromatic hydrocarbons-based planar conjugated structures. Yet, the synthesis of conjugated fused heterocycles is often complicated. In this work, intramolecular non-covalent interaction is introduced to construct two organic HTMs (DCT and DTC), which can be facilely obtained through simple reactions. Compared to DTC with hexyl chain on the central benzene ring, DCT with hexyloxy chains shows better planarity in the core structure, as a result of the intramolecular non-covalent interactions between oxygen on hexyloxy and sulfur atom on the adjacent thiophene, as reflected from its single crystal structure. Moreover, DCT in a pristine state shows a decent hole mobility comparable to the doped Spiro-OMeTAD. Ultimately, conventional devices using dopant-free DCT as HTM show a high efficiency of 22.50%, with excellent long-term stability, and light and thermal stability. The results show that the noncovalent interaction is a useful and simple design strategy for dopant-free HTMs, that can effectively improve the efficiency and stability of PSCs.

High‐Efficiency Deep‐Blue Solution‐Processed Organic Light‐Emitting Diodes Using Carbazole Dendrons Modified Hybridized Local and Charge‐Transfer Emitters

In the pursuit of efficient and cost‐effective organic light‐emitting diodes (OLEDs), the development of solution‐processed hybridized local and charge transfer (HLCT) emitters presents a promising approach. HLCT materials uniquely integrate the advantages of both singlet and triplet excitons, surpassing the traditional spin statistical limit of 25% while offering high photoluminescence efficiency and balanced charge transport properties. Herein, we report the synthesis and characterization of two new deep blue, solution‐processable HLCT fluorophores, G1FTPI and G2FTPI. These compounds incorporate fluorenyl carbazole dendron units into the HLCT luminogenic triphenylamine‐phenanthroimidazole (TPI) molecule. Their HLCT and photoluminescence (PL) properties were experimentally and theoretically investigated using solvation effects and density functional theory (DFT) calculations. The molecules exhibit deep blue emission with a high solid‐state fluorescence quantum yield, good solution‐processed film‐forming quality, and high hole mobility values of 2.18 – 2.61 × 10‐6 cm2 V‐1s‐1. Both compounds were successfully employed as non‐doped emissive layers in solution‐processed OLEDs, demonstrating excellent electroluminescent (EL) performance. Notably, the G2FTPI‐based device emitted a deep blue light at 432 nm with CIE coordinates of (0.158, 0.098) and achieved a a maximum current efficiency (CEmax) of 3.13 cd A‐1 and a maximum external quantum efficiency (EQEmax) of 5.30%.

A new homologous series of semi-conducting liquid crystals based on phenyl-anthracene: synthesis and effect of the alkyloxy terminal chain on charge transport and photoconductive properties.

π-Conjugated systems are the key to the charge transport properties of organic semiconductors. Four multifunctional mesogenic materials were designed and synthesised from 2-amino anthracene and para-hydroxybenzaldehyde. Each material contains a central, rigid phenyl-anthracene core and one flexible alkyloxy chain with different lengths based on the concept of combining liquid crystal (LC) materials featuring facile processability, highly ordered alignment, and effective charge transport. (E)-N-(Anthracen-2-yl)-1-(4-(alkyloxy)phenyl) methanimine (n-OPIA) with n = 8, 10, 12, and 16 was chemically characterized by nuclear magnetic resonance spectroscopy and high-resolution mass spectrometry. Their thermal behaviours were performed by means of differential scanning calorimetry and polarised optical microscopy and showed differences in mesomorphic behaviours with respect to the alkyloxy chain length. Concerning their frontier molecular energy levels, they were studied by optical spectroscopy and cyclic voltammetry and compared to values obtained via ab initio density-functional theory (DFT) calculations. LC field-effect transistors (LC-FETs) using a solvent vapour enhanced drop casting based n-OPIA material showed efficient electrical parameters and interesting photoconductive properties, indicating their potential applications in multifunctional integrated devices. As the alkyloxy chain length of the n-OPIA compounds increased, the hole mobility, on/off current ratio, and responsivity decreased. The 8-OPIA homologue exhibits a mobility one order of magnitude larger than the previously studied homologue, namely 10-OPIA.

Investigating the acceptor tuned effect on INPOD-based efficient D-π-A organic chromophores for optoelectronic utilization through quantum chemical analysis

In this study, the dye-sensitized solar cells and non-linear optical capabilities of newly designed ((E)-2-amino-5-((5-(4-p-tolyl-1,2,3,3a, 4,8 b-hexahydrocyclopenta [b]indol-7-yl)thiophen-2-yl)methylene)thiazol-4(5H)-one (INPOD)-based A1-A6 organic chromophores were examined. To create a D-π-A structure, the A1-A6 molecules were positioned on the electron donor, spacer, and acceptor, respectively. The use of hybrid functionals including PBEPBE, CAM-B3LYP, and MPW1PW91 was evaluated for the maximum absorption wavelength of INPOD. According to the calculated outcomes, MPW1PW91 exhibited λmax closest to INPOD. Consequently, the optical absorption spectra of A1-A6 were employed by this method to identify the key factors. The photovoltaic characteristics of these compounds in dye-sensitized solar cells were studied theoretically. The acceptor category affected the photovoltaic performance of A1-A6. Through the quantum chemical technique in time-dependent density functional theory methods, the electronic charge distribution and intramolecular charge transfer inside the A1-A6 were found. Time-dependent density functional theory calculations revealed that all A1-A6 had a λmax, that was greater than the INPOD (437 nm) in the range of 564–806 nm. A6 demonstrated an electron reorganization energy of 0.2340 eV, while a hole reorganization energy of 0.1006 eV. These values represent the maximum mobility of holes and electrons among all values. Additionally, the open circuit voltage was calculated after coupling each compound with a PTB7-Th. By the Voc of 2.10, 2.06, 2.22, and 2.08 eV, the A1, A3, A4, and A5 dyes produced the best results, respectively. The A1-A6 sensitizers were used to derive the non-linear optical properties of the dipole moment, polarizability, and first-order hyperpolarizability. It was noticed from the calculated results that the A2 and A6 molecules have the best options for non-linear optical activity. It tested how well the A1-A6 dyes performed in terms of charge transfer, dye regeneration, electron injection driving force, light harvesting efficiency, transition density matrix, molecular electro-potential, and density of states. The computed result showed that A2 and A6 chromophores are excellent candidates for dye-sensitized solar cells. Finally, those dye derivatives would certainly work effectively as tuning-A in optoelectronic applications.

Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity.

Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm2 V-1 s-1 and an Ion/Ioff ratio exceeding 106 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved.

PEDOT:PSS-Free Quantum-Dot Light-Emitting Diode with Enhanced Efficiency and Stability.

Although high-performance quantum-dot light-emitting diodes (QLEDs) have been achieved, their stability is still limited due to the use of unstable PEDOT:PSS as the hole injection layer (HIL). Here, we developed a PEDOT:PSS-free QLED by using a binary PTAA:F4-TCNQ HIL. Because the PTAA, with a highest occupied molecular orbital (HOMO) level of ∼5.20 eV, can facilitate hole injection from ITO to the hole transport layer, and the F4-TCNQ can act as the electron acceptor dopant to improve the hole density and hole mobility of PTAA, the PTAA:F4-TCNQ HIL can exhibit excellent hole injection capability. As a result, the PEDOT:PSS-free QLED can exhibit a high EQE of 24.19% and an impressive brightness of 367,200 cd/m2, which are significantly higher than those of conventional QLEDs. Moreover, due to the improvement of device performance and the removal of PEDOT:PSS, the PEDOT:PSS-free QLED can also exhibit a high T95 operational lifetime of 4206 h at 1000 cd/m2 and an excellent T80 shelf lifetime of 207.41 h at 136400 cd/m2, which are about 1.6- and 3.3-fold those of conventional QLEDs, respectively. We believe that the demonstrated PEDOT:PSS-free QLED, with higher performance and stability, will promote the practical application of QLEDs in displays.

Efficient and Stable Inverted Perovskite Solar Cells Enabled by a Fullerene‐Based Hole Transport Molecule

AbstractDesigning an efficient modification molecule to mitigate non‐radiative recombination at the NiOx/perovskite interface and improve perovskite quality represents a challenging yet crucial endeavor for achieving high‐performance inverted perovskite solar cells (PSCs). Herein, we synthesized a novel fullerene‐based hole transport molecule, designated as FHTM, by integrating C60 with 12 carbazole‐based moieties, and applied it as a modification molecule at the NiOx/perovskite interface. The in situ self‐doping effect, triggered by electron transfer between carbazole‐based moiety and C60 within the FHTM molecule, along with the extended π conjugated moiety of carbazole groups, significantly enhances FHTM's hole mobility. Coupled with optimized energy level alignment and enhanced interface interactions, the FHTM significantly enhances hole extraction and transport in corresponding devices. Additionally, the introduced FHTM efficiently promotes homogeneous nucleation of perovskite, resulting in high‐quality perovskite films. These combined improvements led to the FHTM‐based PSCs yielding a champion efficiency of 25.58 % (Certified: 25.04 %), notably surpassing that of the control device (20.91 %). Furthermore, the unencapsulated device maintained 93 % of its initial efficiency after 1000 hours of maximum power point tracking under continuous one‐sun illumination. This study highlights the potential of functionalized fullerenes as hole transport materials, opening up new avenues for their application in the field of PSCs.

Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures.

The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO2/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω-1 to 0.0007 Ω-1 under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cm2V-1s-1 to 400 cm2V-1s-1 and electron mobility decreased from 800 cm2V-1s-1 to 200 cm2V-1s-1. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices.

Disentangling the Optoelectronic Behavior of Lead Iodide Governed by Two-Dimensional Electron Confinement.

We present a joint experimental and theoretical study for complete spectroscopic characterization and optoelectronic properties of lead iodide. Experimentally, we combine X-ray diffraction experiments to elucidate the structure with photoelectron spectroscopy to explore its electronic structure. Computationally, simulations are performed in the frame of density functional theory. We show that PbI2 presents a two-dimensional layered structure and exhibits a large transient photocurrent effect under visible light illumination, which are compatible with the surface photovoltage scenario. The transient photocurrent has an extremely long lifetime: when the sample is lightened with visible light, it shows very long relaxation times and, consequently, huge charge carrier diffusion lengths. We explain this anomalous behavior with the slow carrier mobility of holes and electrons caused by the 2D electron confinement in the layered material. Our results can be used as a simple model for understanding the optoelectronic properties of more complex 2D hybrid perovskites.

Heterojunction Organic Solar Cells with Efficient Charge Mobility and Separation Capabilities Studied by DFT.

The properties of the active layer materials play a decisive role in determining the power conversion efficiency of organic solar cells (OSCs). Chlorophyll and its derivatives are abundant and environmentally friendly functional organic molecular materials. Using density functional theory (DFT) and time-dependent density functional theory (TD-DFT), we have calculated the absorption spectra and their excited state properties based on optimized ground state structures. It was found that bacteriochlorin exhibits superior structural properties, a smaller energy gap and hole reorganization energy, redshifted absorption spectra, and higher hole mobility compared to the donor D18. This suggests that bacteriochlorin exhibits superior donor properties. Comparative studies between o-AT-2Cl and m-AT-2Cl showed that o-AT-2Cl had superior acceptor properties, implying that differences in substitution positions can influence the physicochemical properties of non-fullerene acceptors (NFAs). Subsequently, six bulk heterojunctions (BHJs) were constructed by combining three donors with nonfused ring electron acceptors, o-AT-2Cl and m-AT-2Cl. The bacteriochlorin-based BHJs performed well among them, with BChl3/o-AT-2Cl and BChl4/o-AT-2Cl having the largest interfacial charge separation rate. The results suggested that BHJs composed of bacteriochlorin and NFAs can improve OSCs' photovoltaic performance, providing a feasible scheme for designing efficient OSCs.

Quasi-Planar Core Based Spiro-Type Hole-Transporting Material for Dopant-Free Perovskite Solar Cells.

Hole-transporting material (HTMs) are crucial for obtaining the stability and high efficiency of perovskite solar cells (PSCs). However, the current state-of-the-art n-i-p PSCs relied on the use of 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) exhibit inferior intrinsic and ambient stability due to the p-dopant and hydrophilic Li-TFSI additive. In this study, a new spiro-type HTM with a critical quasi-planar core (Z-W-03) is developed to improve both the thermal and ambient stability of PSCs. The results suggest that the planar carbazole structure effectively passivates the trap states compared to the triphenylamine with a propeller-like conformation in spiro-OMeTAD. This passivation effect leads to the shallower trap states when the quasi-planar HTMs interact with the Pb-dimer. Consequently, the device using Z-W-03 achieves a higher Voc of 1.178 V compared to the spiro-OMeTAD's 1.155 V, resulting in an enhanced efficiency of 24.02 %. In addition, the double-column π-π stacking of Z-W-03 results in high hole mobility (~10-4 cm2 V-1 s-1) even without p-dopant. Moreover, when the surface interface is modified, the undoped Z-W-03 device can achieve an efficiency of nearly 23 %. Compared to the PSCs using spiro-OMeTAD, those with Z-W-03 exhibit enhanced stability under N2 and ambient conditions. This superior performance is attributed to the quasi-planar core structure and the presence of multiple CH/π and π-π intermolecular stacking in Z-W-03. The multiple CH/π and π-π intermolecular contacts of HTMs can improve the hole hopping transport. Therefore, it is imperative to focus on further molecular structure design and optimization of spiro-type HTMs incorporating quasi-planar cores and carbazole moieties for the commercialization of PSCs.

A Backgate for Enhanced Tunability of Holes in Planar Germanium.

Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with an emphasis on their strong and tunable spin-orbit interaction, low effective mass, and high hole mobility. However, planar systems are still limited by the fact that the shape of the confinement potential is directly related to the density. In this work, we present the successful implementation of a backgate for a planar germanium heterostructure. The backgate, in combination with a topgate, enables independent control over the density and the electric field, which determines important state properties such as the effective mass, the g-factor, and the quantum lifetime. This unparalleled degree of control paves the way toward engineering qubit properties and facilitates the targeted tuning of bilayer quantum wells, which promise denser qubit packing.