The single crystals of Mn5Si3 (hexagonal system), MnSi (cubic system) and Mn27Si47(tetragonal system) were prepared by the high temperature tin solution method using manganese metal powders and silicon powders as starting materials in an argon atmosphere. The conditions for obtaining these crystals with one-phase materials and relatively large size were determined. As-grown Mn5Si3, MnSi and Mn27Si47 single crystals were used for chemical analysis and measurements of unit cell dimensions, densities, Vickers microhardness and electrical resistivity. The optimum conditions for growing Mn5Si3, MnSi and Mn27Si47single crystals are the following atomic ratios of starting materials (Si/Mn, Sri/Mn), soaking temperature and soaking time; Si/Mn =0.22, Sn/Mn =10.17, 1100 °C, 10 h for Mn5Si3, Si/Mn =1.0, Sn/Mn =10.17, 1100 °C, 10 h for MnSi and S i /Mn =1.74, Sn/Mn =6.36, 1000 °C, 20 h for Mn27Si47, respectively. Under these conditions, Mn5Si3 single crystals, having grayish and metallic luster, were generally obtained in the form of prismatic shape extending to direction, MnSi single crystals, having grayish and metallic luster, were generally 708 f t 1992 No.7obtained in the form of prismatic shape extending to direction, and Mn27Si47si ngle crystals were grayish and metallic luster, having a nearly spherical polyhedral. The largest crystals prepared have the maximum dimensions of about 0.1 mm x O.1 mm x 6.4 mm for Mn5Si3, 0.9 mm x 1.0 mm x 9.2 mm for MnSi and O.2 5 mm x O.2 5 mm x 0.2 5 mm for Mn27S i4.7The results of chemical analysis and measurements of unit cell dimensions, Vickers microhardness (H), densities (d. ), electrical resistivity (p) are as follows:Mn5Si3; M n5.45Si3, a = 6.9 09( 2) A, c = 4.815( 1) A, V=199.0 5( 3 ) A3, dm= 5.9 5( 2 ) gfcm3, Hy = 820±-3 0 k gf/rnm2, p = 3500±230 i tC-c2m MnSi; Mn0 9 8Si, a =4.5594( 6 ) A, V=94.7 8( 1 )A., dm= 5.8 0( 1 ) g/cm3, Hy=1100±-40k gf/mm2, = 3 200±-1 8 0/ I Q c m Mn27Si47; Mn2 7.9 8Si4 7, a=5.530( 1 ) A, c=117.8 6( 2 ) A, V=3604.2 6( 8 ) A3, dm= 5.17( 2 ) g/cm3