MnO3 Buffer Layer Research Articles

Fully Magnetically Polarized Ultrathin La0.8Sr0.2MnO3 Films.

We report the observation of fully magnetically polarized ultrathin La0.8Sr0.2MnO3 films by using LaMnO3 and La0.45Sr0.55MnO3 buffer layers grown epitaxially on SrTiO3(001) substrates by molecular beam epitaxy. Specifically, we show that La0.8Sr0.2MnO3 films grown on 12-unit-cell LaMnO3 have bulk-like magnetic moments starting from a single unit cell thickness, while for the 15-unit-cell La0.45Sr0.55MnO3 buffer layer, the La0.8Sr0.2MnO3 transitions from an antiferromagnetic state to a fully spin-polarized ferromagnetic state at 4 unit cells. The magnetic results are confirmed by X-ray magnetic circular dichroism, while linear dichroic measurements carried out for the La0.8Sr0.2MnO3/La0.45Sr0.55MnO3 series show the presence of an orbital reorganization at the transition from the antiferromagnetic to ferromagnetic state corresponding to a change from a preferred in-plane orbital hole occupancy, characteristic of the A-type antiferromagnetic state of La0.45Sr0.55MnO3, to preferentially out of plane. We interpret our findings in terms of the different electronic charge transfers between the adjacent layers, confined to the unit cell in the case of insulating LaMnO3 and extended to a few unit cells in the case of conducting La0.45Sr0.55MnO3. Our work demonstrates an approach to growing ultrathin mixed-valence manganite films that are fully magnetically polarized from the single unit cell, paving the way to fully exploring the unique electronic properties of this class of strongly correlated oxide materials.

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr0.2Ti0.8O3 gate and an RNiO3 (R: rare earth)/La0.67Sr0.33MnO3 composite channel. The ultrathin La0.67Sr0.33MnO3 buffer layer not only tailors the carrier density profile in RNiO3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

Preparation of High-Quality Conductive La0.7Sr0.3MnO3 Buffer Layer Applied to Low-Cost YBCO-Coated Conductors

Through a simple and low-cost way to gain the precursor solution, a conductive and high-quality La0.7Sr0.3MnO3 (LSMO) buffer layer approximately 280 nm thick only by one single coating was successfully deposited on LaAlO3 (LAO) (100) single crystal substrates using an independently developed new method of polymer-assisted chemical solution deposition (PA-CSD). Highly epitaxial YBa2Cu3O7−x (YBCO) superconducting film with thickness of 500 nm managed to be deposited on LSMO/LAO. A study was made on the LSMO buffers and YBCO films with XRD, SEM, and superconducting critical temperature (Tc) analyses. The temperature-dependent resistivities of YBCO on insulating BaZrO3 (BZO) buffer layer and on conductive LSMO buffer layer were also investigated. It was found that the conductive LSMO buffer prepared at 840 °C in argon would possess high-degree out-of-plane and in-plane texturing, good density with a sufficient thickness about 280 nm, and microcrack-free nature. More importantly, the value of the self-field critical current density (Jc) of YBCO superconducting film on LSMO/LAO architecture was 2.8 MA/cm2 at 77 K.

Ultrahigh-vacuum organic molecular-beam deposition system for in situ growth and characterization.

A compact ultrahigh-vacuum molecular-beam deposition system has been developed for the in situ synthesis of organic thin films and multilayers. The system incorporates all the features (heater, thickness monitor, evaporators) necessary for controlled organic thin-film growth. It can be used independently, or it can be docked to the in situ growth system and transferred to other instruments of the PGM beamline, thus allowing extensive film preparation and characterization. A manipulator dedicated to specimen preparation and organic-film deposition with temperature control between 200 K and ∼800 K has been developed. The design and performance of the system are reported with emphasis on a novel solution of masks developed to achieve position-dependent film deposition. To demonstrate the enhanced capabilities of the PGM beamline in the growth and in the characterization of electronic-structure studies of organic molecular films and their heterostructures through synchrotron-based spectroscopies, this paper presents some preliminary results of a study of Fe-phthalocyanine growth on Si substrates and on in situ prepared La0.67Sr0.33MnO3 buffer layers on SrTiO3 single crystal.

Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer

The detailed crystal structure and antiferromagnetic properties of a 42 nm thick CaMnO3 film grown on a LaAlO3 substrate with a 9 nm La0.67Ca0.33MnO3 buffer layer have been investigated. Compared with a CaMnO3 film directly grown on a LaAlO3 substrate, only one kind of orthorhombic b axis orientation along the [100] axis of the substrate is observed in the CaMnO3 film with a La0.67Ca0.33MnO3 buffer layer. To determine the antiferromagnetic ordering type of our CaMnO3 film with a buffer layer, the first-principles calculations were carried out with the results, indicating that the CaMnO3 film, even under a tensile strain of 1.9%, is still a compensated G-type antiferromagnetic order, the same as the bulk. Moreover, the exchange bias effect is observed at the interface of the CaMnO3/La0.67Ca0.33MnO3 film, further confirming the antiferromagnetic ordering of the CaMnO3 film with a buffer layer. In addition, it is concluded that the exchange bias effect originates from the spin glass state at the La0.67Ca0.33MnO3/CaMnO3 interface, which arises from a competition between the double-exchange ferromagnetic La0.67Ca0.33MnO3 and super-exchange antiferromagnetic CaMnO3 below the spin glass freezing temperature.

Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

Thin films of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO3 substrate with and without a conductive La0.7Sr0.3MnO3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm3, respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO3-based materials with unusual multifunctional properties.

Ferroelectric Self‐Poling, Switching, and Monoclinic Domain Configuration in BiFeO3 Thin Films

Self‐poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as‐grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self‐poling. This study investigates the effect of self‐poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO3 (R′ and T′) in thin films grown on LaAlO3 substrates with slightly different La0.3Sr0.7MnO3 buffer layers. This study shows that the polarization state formed during the growth acts as “imprint” on the polarization and that switching the polarization away from this self‐poled direction can only be done at the expense of the sample's monoclinic domain configuration. The observed reduction of the monoclinic domain size is largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below Tc). Switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains.

X-PEEM study of antiferromagnetic domain patterns in LaFeO3 thin films and embedded nanostructures

The combination of soft X-ray absorption spectroscopy with photoemission electron microscopy (X-PEEM) provides a powerful tool for imaging the domain structure in magnetically ordered systems. Using linearly polarized X-rays in the PEEM-3 microscope of the Advanced Light Source, we have investigated the antiferromagnetic (AFM) domain patterns in LaFeO3 thin films and nanostructures. Embedded nanostructures with AFM order were defined using a structuring technique which relies on local disruption of the magnetic order by Ar+ ion implantation. We demonstrate that extended AFM domains can be stabilized along the edges of such embedded nanostructures, when the edges are aligned with AFM easy axes in the thin film material. Detailed analysis of the magnetic linear dichroism in polarization-dependent X-PEEM data from LaFeO3/La0.7Sr0.3MnO3 bilayers shows stabilization of multiple degenerate easy axes of the LaFeO3 layer. We argue that the extra set of easy axes, not present in LaFeO3 grown directly on a cubic substrate (i.e., SrTiO3), arises from structural coupling to the La0.7Sr0.3MnO3 buffer layer, acting as the effective substrate. Finally, we demonstrate how the combination of this structural perturbation and nanoscale patterning may be exploited to selectively stabilize extended AFM domains along either of the available easy axes.

Fatigue improvement in modified lead zirconate titanate ceramics through employment of La0.8Sr0.2MnO3 buffer layers

The dielectric, ferroelectric and fatigue properties of modified lead zirconate titanate (PZT) ceramics were investigated in terms of the effect of La0.8Sr0.2MnO3 (LSM) buffer layers. The double sided LSM buffer layers resulted in a lower dielectric loss, a weaker frequency dependence of dielectric constant, a lower leakage current density, and an increase in the saturation polarization. Moreover, it was found that up to 1.4×107 cycle numbers, the Ag||LSM/PZT/LSM||Ag capacitor, with remanent polarization decreased by 55%, was superior to the Ag||PZT||Ag capacitor by 85%. The results indicate that the LSM buffer layers can improve the fatigue endurance of the PZT ceramics with Ag electrodes, mainly because the accumulated charges were compensated at the interface junctions between the LSM buffer layers and the Ag electrodes. We fit the polarization fatigue data using a modified model and calculated the characteristic decay time of oxygen vacancy migration in the Ag||LSM/PZT/LSM||Ag and the Ag||PZT||Ag capacitors, respectively.

Enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O3 thin films on Pt/TiO2/SiO2/Si substrates using La0.67Sr0.33MnO3 buffer layers

Highly 111 oriented Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT) ferroelectric thin films were deposited on Pt/TiO2/SiO2/Si substrates using a La0.67Sr0.33MnO3 (LSMO) buffer layer. It is found that the LSMO buffer layers induced highly (111) textured growth of PTZT films. Ferroelectric hysteresis measurements showed that the remnant polarization and coercive field of these films are about 20 µC cm-2 and 20 kV cm-1, respectively. After 1 × 1011 switching cycles at 5 V (about 100 kV cm-1 applied field) in fatigue tests, the decay of non-volatile polarization of these films was only about 6% of the initial value. No significant degradation of the polarization can be found in these films over a waiting time of 1 × 105 s in the retain test. It is proposed that the high degree of 111 orientation of the PTZT films induced by LSMO is responsible for the excellent performance of the PTZT film capacitors. These studies demonstrated that the PTZT films with the LSMO buffer layer look very promising for ferroelectric memory applications and the developed techniques are very compatible with semiconductor technology.