Minimum Optical Losses Research Articles

Integrated optical waveguides for quantum photon gates at a wavelength of 810 nm

Subject of study. The optical losses in waveguides designed for creating quantum photon gates at a wavelength of 810 nm were investigated. Aim of study. The aim of the study was to create integrated optical single-mode waveguides for quantum photon gates at a wavelength of 810 nm and to estimate optical losses acceptable for maintaining the necessary degree of photon-pair entanglement. Method. The waveguides were manufactured through thermal diffusion of titanium ions into a substrate composed of an X-slice of nominally pure lithium niobate (LiNbO3). Optical losses were estimated by experimentally measuring the loss per unit length of the waveguide. Optical radiation was coupled into and out of the waveguide using fiber segments, with one end connected and the other cleaved. A drop of immersion liquid was applied between the cleaved fiber and waveguide end, and measurements were performed for both polarization modes. Main results. Six groups of samples were produced, each containing waveguides with strip widths of d=3.0, 2.0, and 1.5 µm. The measured optical losses in the manufactured waveguides indicated that those with a titanium strip width of d≈3 µm exhibited the lowest losses. The estimated minimum optical losses for transverse magnetic and transverse electric polarization were approximately 0.20–0.25 and 0.1 dB/cm, respectively. Practical significance. The waveguides manufactured with a strip width of approximately 3 µm can be used to create quantum photonic gates in an integrated optical design. The chosen wavelength of 810 nm offers potential for near-future development of photonic gates, as one of the most accessible methods for generating entangled photon pairs involves using a 405-nm laser followed by wavelength doubling through a nonlinear beta-barium borate crystal.

Layered Gallium Monosulfide as Phase‐Change Material for Reconfigurable Nanophotonic Components On‐Chip

AbstractThe demand for information processing at ultrahigh speed with large data transmission capacity is continuously rising. Necessary building blocks for on‐chip photonic integrated circuits (PICs) are reconfigurable integrated low‐loss high‐speed modulators and switches. Phase change materials (PCMs) provide unique opportunities for integration into PICs. Here, the investigation of layered gallium monosulfide (GaS) as a novel low‐loss PCM from infrared to optical frequencies is pioneered, with high index contrast (Δn ≈0.5) at the optical telecommunication band. The GaS bandgap switches from 1.5 ± 0.2 eV for the amorphous state to 2.1 ± 0.1 eV for the crystalline state. It is demonstrated that the reversible GaS amorphous‐to‐crystalline phase transition can be operated thermally and by picosecond green (532 nm) laser irradiation. The design of a reconfigurable integrated optical modulator on‐chip based on Mach‐Zehnder Interferometers (MZI) with the GaS PCM cell deposited on one of the arms for application is presented at the telecommunication wavelength of λ = 1310 nm, where the standard single mode optical fiber exhibits zero chromatic dispersion, and at λ = 1550 nm, where a minimum optical loss of 0.22 dB km−1 is obtained. This opens the route to applications such as reconfigurable modulators, beam steering using phase modulation, and photonic neural networks.

High‐Efficiency Structural Coloration Enabled by Defect‐Free Block Copolymer Self‐Assembly for a Solar Cell Distributed Bragg Reflector

AbstractSolar cell coloration with minimum optical loss is increasingly required for building‐integrated photovoltaics (BIPV) in modern urban areas because of its importance in harmonizing the exterior of zero‐energy buildings and surroundings. A simple strategy for developing a distributed Bragg reflector (DBR) is designated with 1D lamella‐forming polystyrene‐b‐poly(2‐vinylpyridine) (PS‐b‐P2VP) films. An optimized thermal annealing process produces defect‐free lamellar microdomains oriented parallel to the substrate throughout the film. The selective crosslinking in the P2VP block and swelling of these films in a methanol solution with methanesulfonic acid facilitate the formation of highly asymmetric gigantic lamellae, enabling the entire visible‐wavelength spectrum of DBR structural colors. Three representative red (R), green (G), and blue (B) DBR films are produced on a Si solar cell. Coloration from high‐reflectance and narrow‐width DBR films results in vividly colored Si solar cells with a minor or negligible reduction in power conversion efficiency. The approach for photovoltaics, in terms of both the attractive esthetic and technical aspects of BIPV application, offers a viable method for fabricating high‐performance DBR films based on block copolymer self‐assembly.

Bidirectional Cladding-Pumped Multicore EDFA and its Optimization for Energy Efficiency by Tuning Pump Condition

This work investigates the feasibility of improving the energy efficiency of a cladding-pumped multicore (MC) EDFA by utilizing bidirectional (BD) pumping. We combined a conventional forward-cladding-pumped MC-EDFA with backward cladding pumping and tuned the pump-gain characteristics and gain shape by controlling the optical pump power ratio of its forward and backward pumps. Since EDFAs have wavelength dependence, output power equalization by each wavelength channel is extremely important for amplifying the wavelength division multiplexing (WDM) signal. The standard method of current equalization is to adjust the attenuation by the output power of each wavelength channel. The main issue with the current standard equalization is the indispensable optical power loss caused the reduced optical amplification efficiency of the EDFA. Our previous work demonstrated that the optical power loss due to equalization can be reduced by controlling the optical power ratio of the forward and backward pumps. This leads to improved energy efficiency of the signal amplification and equalization of both the WDM and spatial division multiplexing (SDM). <p xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">In this paper, we report our detailed investigation into the tuning amplification characteristics of the BD-MC-EDFA. Our main focus was the gain, noise figure (NF), and gain shape of a 7-core BD-MC-EDFA prototype when forward and backward optical pump power was changed. Under 8 W of total optical pump power, the percentage of 60% forward cladding optical pump power was found to be optimal for efficiency considering the minimum output optical power loss due to equalization. This condition translates into a 1.7% pump conversion efficiency (PCE) improvement, which corresponds to a 24% reduction of the total optical pump power compared to conventional MC-EDFA with only forward cladding pumping. Although the NF deteriorated by 1.0 dB in wavelength average in the 4.5-THz signal bandwidth in exchange for the efficiency improvement, degradation of the 34.2-GBaud polarization multiplexed 16 quadrature amplitude modulation (PM-16QAM) signal amplified by the BD-MC-EDFA operated under the optimized condition was negligible.

Highly efficient color-control technique for building-integrated photovoltaics using optical dielectric thin film

A color-control technique based on optical thin films on glass is investigated by means of numerical simulation and experiment, with a particular focus on building-integrated photovoltaic (BIPV) applications. We show that white-colored BIPV modules can be realized with a minimum optical loss by applying optical thin films that have multiple reflection peaks in a complementary color relationship, like the emission spectrum of white LEDs. The angular dependence of hue, which is an inherent drawback of optical thin film systems, is suppressed by modifying the design of the film to maintain the complementary color relationship of multiple reflection peaks. The simulated thin film design is confirmed by an experiment with a silicon solar cell, resulting in a white color and a low short-circuit current density loss (ΔJ SC) of 5.9%. These results indicate that our approach is a promising way to realize fascinating colors and a high energy yield simultaneously in BIPV modules.

SPR based refractive index modulation of nanostructured SiO2 films grown using GLAD assisted RF sputtering technique

Low refractive index materials have always gained attention for avoiding optical losses in numerous devices like Light emitting diodes (LEDs), Distributed Bragg Reflectors (DBRs) etc. Glancing angle deposition (GLAD) has proven to be an effective method for depositing porous nanostructures with low refractive index. SiO2 has the lowest refractive index in comparison to most of the materials present in nature and is therefore utilized extensively in the fabrication of optical devices with minimum optical losses. The present work focuses on the SiO2 nanostructured thin films grown using glancing angle (GLAD) configuration in RF Sputtering technique under varying deposition conditions (glancing angle and pressure) at fixed thickness. The deposited porous SiO2 nanostructured layers have well-defined nanorods of feature size smaller than 100 nm. The refractive index corresponding to all the deposited SiO2 nanostructured films came out to be smaller than the corresponding value (1.49) mentioned in the literature for bulk SiO2. The refractive index has been observed to vary in a wide range (1.05 to 1.40). Characterization of the deposited SiO2 nanostructured films was carried out using Fourier Transform Infrared (FTIR) spectroscopy, Energy Dispersive X-Ray (EDS) analysis, and Atomic Force Microscopy (AFM) to assess the qualitative properties of the deposited nanostructured SiO2 films. Surface Plasmon Resonance (SPR) and Ellipsometry studies are performed to determine the refractive index value of the deposited nanostructured SiO2 thin films. A refractive index value as low as ∼ 1.05 at a wavelength of 633 nm is achieved for SiO2 nanostructured thin film deposited at 30 mTorr deposition pressure and 80° glancing angle.

PLC-Based Integrated Refractive Index Sensor Probe with Partially Exposed Waveguide

This paper proposes a simple, high-efficiency refractive index (RI) sensor, with a structure based on the planar lightwave circuit (PLC) probe type. The optical sensor has a 1 × 2 splitter structure with reference and sensing channels, each consisting of a U-shaped waveguide structure that is configured by connecting C bends. This design allows for the sensor device to have a probe structure wherein the surface interconnected with activity devices (i.e., an optical source and optical detector) is placed on one side. The reference channel is bent with a minimum optical loss, and the sensing channel has a bent structure, involving a C-bend waveguide with a maximum loss. The C-bend waveguide with a maximum loss is conformally aligned to have a trench structure with the same bending radius, designed to selectively expose the sidewall of the core layer. The local index contrast varies depending on the material in contact with the trench, resulting in a change in the optical output power of the waveguide. The sensitivity of the proposed sensor was 0 and 2070 μW/refractive index unit (RIU) for the reference and sensing channels, respectively, as the RI changed from 1.385 to 1.445 at a 1550 nm wavelength. These results suggest that the proposed structure enables efficient RI measurement through the use of a simple dip-type method.

High-speed compact folded Michelson interferometer modulator.

We propose and experimentally demonstrate a novel compact folded Michelson interferometer (FMI) modulator with high modulation efficiency. By folding the 0.5 mm-long phase shift arms, the length of the modulation area of the FMI modulator is only 0.25 mm. Meanwhile, the traveling wave electrode (TWE) is also shorter, which decreases the propagation loss of the RF signal and contributes to a small footprint. The Vπ-L of the present device is as low as 0.87 V·cm at -8 V bias voltage. The minimum optical insertion loss is 3.7 dB, and the static extinction ratio (ER) is over 25 dB. The measured 3-dB electro-optical (EO) bandwidth is 17.3 GHz at a -6 V bias. The OOK eye diagram up to 40 Gb/s is demonstrated under 2 V driver voltage.

Single-prism polarizer for laser emission with higher power

Subject of study. The properties of a new prismatic polarizer-analyzer of laser (optical) emission with higher power were investigated. The polarizer was designed based on a birefringent crystal in the form of a single total internal reflection prism with a triangular cross-section. Spectral dependences of the geometry of the cross-section in the refraction plane were investigated for two selected polarizer materials. Aim. The study was aimed at designing a polarizer in the form of an individual single-element device capable of functioning in the laser beams with higher power that maintains the original direction of radiation propagation with minimum optical losses and without anamorphosis of the beam cross-section. Method. The transmission of radiation through an optically anisotropic crystalline prism with an arbitrary triangular cross-section was investigated using mathematical modeling. Snell’s equations, which were developed for refraction and total internal reflection of radiation on the faces of an anisotropic prism, were used. Based on the obtained solutions, the spectral dependences of angular structural parameters of prismatic polarizers were calculated under conditions of maintaining the collinearity of the input and output rays and their refractions on the input and output faces fixed at Brewster’s angles. The energy losses and spectral ranges of operation of prismatic polarizers composed of two selected crystalline materials with a priori defined geometry were analyzed. Main results. A new prismatic polarizer was designed and investigated. Its main feature corresponds to anisotropic total internal reflection of optical radiation from one of the faces of a birefringent single prism under Brewster’s refractions on the input and output faces. We established that the device exhibits minimum optical losses, collinearity (or coaxiality) of unpolarized and polarized beams, and no anamorphotic distortion of the cross-section of the output p-polarized beam. Furthermore, we demonstrated that in the case of virtually symmetric prisms for which the difference between the structural angles and Brewster’s angles is 3°–7°, the effect of anamorphism of the beam cross-section is negligibly small. The spectral ranges of the device operation were determined for several specific designs. A weak dependence of spectral bands on the selected orientations of the polarizer crystal was observed. It manifests in the symmetry of the obtained dependences. We demonstrated that the prisms composed of YVO4 crystals are the most advantageous for obtaining the widest spectral bands in the near- and mid-infrared spectral ranges. Angular tolerances for the divergence of the incident beams were determined based on analysis of the angular deviations of the incidence angles from the Brewster’s angles. The device can also be used in observational optics as an anisotropic equivalent of the isotropic Dove prism. The difference between the proposed device and the Dove prism is the fact that the proposed device provides the potential of observing an image in ideally linearly polarized light. Practical significance. The proposed single-element design of a prismatic polarizer with Brewster’s input and output faces enables the use of the device for polarization (or polarization analysis) of laser beams with power higher than the values for which the standard multicomponent polarizers are applicable.

High‐Efficiency Vivid Color CIGS Solar Cell Employing Nondestructive Structural Coloration

Structural coloration is an effective method for coloring a solar cell with minimum optical loss. For the application of building integrated photovoltaics, it is desirable to integrate structural colors directly onto the solar cell without damaging it with an economical process. Herein, a solution‐processed distributed Bragg reflector (sDBR) is introduced to realize efficient and vividly colored CuInxGa(1−x)Se2 (CIGS) solar cells. The sDBR is directly combined with the CIGS solar cell at room temperature without damaging the photoactive layer. The sDBR is fabricated on CIGS solar cells by spin coating alternate layers of solution‐processable TiO2 nanoparticles bound with acetylacetone and a polymethyl methacrylate solution. The vividly colored CIGS solar cells exhibit high reflectivity and narrow bandwidth at the designated wavelength, resulting in pure red, green, and blue. The reduction in the photocurrent by the coloring is minimized due to the narrow bandwidth characteristics of the sDBR, while a gain in the photocurrent is obtained at wavelengths outside of the range used for coloring due to the antireflection effect of the sDBR. As a result, the power conversion efficiency of R, G, and B sDBR/CIGS solar cells is 97.2%, 99.4% and 102%, respectively, compared to a conventional CIGS solar cell.

Mid-IR fiber-optic sensors based on especially pure Ge20Se80 and Ga10Ge15Te73I2 glasses

Optical fibers on the base of especially pure Ge20Se80 and Ga10Ge15Te73I2 glasses are prepared and applied as the material of sensing elements. To connect the sensing element to the attachment of an IR Fourier spectrometer, flexible fibers based on polycrystalline silver halides and As-Se glasses are used. The prepared multimode As38Se62/As35Se65 fiber has a minimum optical loss of 40 dB/km at 3 µm that is a record low value among core-clad selenide fibers. Fiber-optic probes with various combinations of the material of flexible fibers and sensing elements are manufactured and tested for FEWS analysis of different model organic mixtures. The promising version of a fiber-optic probe is shown to be a device with polycrystalline silver halide flexible fibers and the chalcogenide fiber sensing element. The Ga10Ge15Te73I2 fiber tips allow analysis in the 5–15 µm spectral range. The U-shaped Ge20Se80 sensing elements with a taper show the highest sensitivity.

Preparation of high purity Sm3+-doped Ga-Ge-As-Se glass and low-loss fiber

The high-purity 700 ppmw Sm3+-doped Ga2.2Ge26.5As14.6Se56.7 glass is prepared and investigated. The glass has an extra-low content of impurities, a wide transmission range (0.9–16 μm), a high glass transition temperature (330 °C), and high stability against crystallization. The low content of limiting impurities is the result of the multistage procedure for the purification of individual components, the basic glass-forming melt, as well as the chemical transport reactions technique. The Sm3+-doped Ga-Ge-As-Se glass shows photoluminescence in the spectral regions 1.2–1.3 μm, 1.4–1.6 μm, 1.75–2 μm, 2.2–3 μm, and 3.5–4.2 μm. In a complex system of samarium levels, the longest-lived energy transition is established to be the one at 3.7 μm with a lifetime of 60 μs From the high-purity Sm3+-doped Ga-Ge-As-Se glass, the single-index fiber with minimum optical loss of 0.5 dB/m at 5.7 μm and without impurity bands in spectrum is fabricated. It is the best result concerning the glass purity and optical loss among Sm3+-doped chalcogenide glass fibers.

C3N4 interlayer formation while synthesizing black titania and their dye sensitized solar cell and conductivity performances

Black titania is an attractive applicant as a narrow bandgap absorber in photovoltaic cells. However, the non-equivalency between the amount of visible light absorbed and the photocatalytic activities limits its usage as photoanodes in the dye sensitized solar cells (DSSCs). Herein, the synthesized black titania (BT) via imidazole at 400oC; without washing steps, produces not only Ti2O3 and Ti3O5 nanoparticles but also allows the formation of the C3N4 nanosheets; which is emphasized via XRD, TEM-SAED-IFFT, FTIR, CV and XPS studies. The BT incorporated with hole transporting metals including Ag2O, CuO and Ag2S; at 3% loading, synthesized by deposition precipitation route are also fabricated to form p-n junction interfaces. The best conversion efficiency attained when using Ag2O/BT was 6%; that presented the highest IPCE% in the visible light margin of 500–750 nm, followed by CuO (5.6%) and BT (4.9%). Although Ag2O/BT did not absorb visible light as CuO, however, it offers minimum optical and electronic losses. Besides, it gives the highest dielectric constant (ε′) value subsequent BT and exposes numerous active sites. Well correlations with vibrational, surface texturing, permittivity and electrical conductivity were achieved and discussed to have a view on the effect of the C3N4 interface as well as oxygen defect sites and the incorporation with metal oxide/sulfide groups. This work supplies a new aspect in the synthesis of g-C3N4 while synthesizing the oxygen deficient TiO2-x in solar energy conversion reactions.

Core-clad terbium doped chalcogenide glass fiber with laser action at 5.38 μm

The core-clad Tb3+-doped Ga-Ge-As-Se/Ge-As-S chalcogenide glass fiber is fabricated and tested in laser experiment. To prepare the high-purity terbium doped Ga-Ge-As-Se core glass, the special multi-stage purification technique is developed. The 1050 ppmw Tb3+-doped core Ga3.2Ge24.9As15.3Se56.6 glass is characterized by an extra-low content of limiting hydrogen impurity, high stability against crystallization and strong broadband photoluminescence in the middle infrared range. The doped chalcogenide fiber has a total diameter of 400 μm, a core diameter of 18 μm, and minimum optical losses of 3 ± 0.3 dB/m at a wavelength of 7.1 μm. Using a Tm3+ 1.98 μm fiber laser as a pump source, the threshold of 5.38 μm lasing with spike structure was reached in chalcogenide fiber for the first time.

High-sensitivity sensing in bare Ge-Sb-Se chalcogenide tapered fiber with optimal structure parameters

In this work, the purified Ge15Sb20Se65 glasses were synthesized through the melt-quenching method and drawn into bare glass fibers with a diameter of 500 μm. The minimum optical loss of this fiber was approximately 1.68 dB/m at 6.0 μm. Then, the fibers were tapered into different waist diameters, containing 244.95, 110.44, and 20.27 μm, for monitoring aqueous ethanol solution. The highest sensitivity was observed when the waist diameter was the smallest of 20.27 μm. On this basis, three tapered fibers with different taper waist lengths were fabricated for aqueous ethanol solution sensing experiment. Experimental results demonstrated that the sensitivity of 15.94 mm taper waist length was more than 3 times as large as that of 11.53 mm, showing that the longer the taper waist length, the better the sensitivity. Finally, based on the fiber evanescent wave theory, the sensing characteristics of the tapered fibers with different waist diameters and waist lengths were numerically simulated.

Performance of Ge and In0.53Ga0.47 as Thermophotovoltaic Cells under Different Spectral Irradiances

The investigation on the effect of illumination power intensities for a thermophotovoltaic (TPV) system is crucial to enhance the TPV cell performance. To date, the studies on the effect of illumination intensities were limited to solar photovoltaic cells application. Meanwhile, the reported work on the impact of infrared illumination intensities on TPV cells are done at limited temperatures and intensities. The effects of TPV intensities on all performance parameters are not comprehensively studied and fully elucidated. Therefore, this paper investigates the performance of indirect-bandgap Germanium (Ge) and direct-bandgap Indium Gallium Arsenide (InGaAs) cells under various TPV spectral irradiances. Silvaco TCAD simulation software was used to investigate the effect of blackbody temperatures ranging from 800 to 2000 K with different illumination intensities on the TPV cell performances. It was found that higher conversion efficiencies are achieved for both TPV cells under higher illumination intensities due to the increase in open-circuit voltage and fill factor. As the beam intensity increases for temperatures >1600 K, fill factor slowly increases for the Ge cell, but decreases for the InGaAs cell due to the increase in the $I^{2}R_{s}$ losses associated with the high current. The finding demonstrates that the open-circuit voltage of indirect-bandgap TPV cell is significantly increased with higher illumination intensities. The variations in cells performance are explicitly explained based on factors such as TPV design structure and the physical properties of semiconductor at varying illumination intensities. The performance of both TPV cells were also analyzed at the minimum optical losses. Average efficiencies of Ge and InGaAs TPV cells were increased to 26.05% and 27.92%, respectively, when the optical losses were minimized with anti-reflection coating and thicker absorber layer. The results of this work demonstrate that by detailed consideration of the effect of spectral irradiances, a high-performance TPV system can be developed.

Dependence of optical attenuation on radiation wavelength and waveguide geometry in copper-coated optical fibers

We demonstrate a novel approach to the determination of optical loss coefficients in metal-coated fibers in a 0.4-1.9 μm wavelength range. It is based on measuring the change of temperature-dependent electrical resistance of the metal coating caused by laser radiation transmitted through the fiber. A number of single-mode and multimode metallized fibers were investigated using several laser sources operating in visible and near infrared ranges. The spectral dependencies of optical losses of copper-coated fibers were experimentally obtained. The region that corresponds to the minimum optical losses is located near 1 μm wavelength. The increase of radiation losses in 1.5-1.9 μm region is much steeper compared to polymer-coated fibers.

1.2-15.2 μm supercontinuum generation in a low-loss chalcohalide fiber pumped at a deep anomalous-dispersion region.

A novel low-loss selenium-based chalcohalide fiber, with a low zero-dispersion wavelength, was prepared by an innovative preparation process. The composition optimized fiber has a wide transmission range of up to 11.5μm, a lowest fundamental mode zero-dispersion wavelength of 4.03μm, and a minimum optical loss of 1.12dB/m at 6.4μm, which provides a possibility to replace As2S3 and As2Se3 in a cascade of ZrF4-BaF2-LaF3-AlF3-NaF(ZBLAN)-As2S3-As2Se3 fiber in the practical all-fiberized supercontinuum (SC) source. Meanwhile, the broadest SC spectrum, ∼1.2 to 15.2μm, was achieved by pumping a 12-cm-long fiber with a femtosecond laser at a deep anomalous-dispersion region. Furthermore, simulations are adopted to interpret the results as well as to demonstrate spectral evolution along the fiber. To the best of our knowledge, this is the broadest SC spectrum reported in any selenium-based chalcogenide fiber.

Tailoring of Bandgap to Tune the Optical Properties of Ga1−xAlxY (Y = As, Sb) for Solar Cell Applications by Density Functional Theory Approach

AbstractThe bandgap was tuned to investigate the electronic and optical aspects using first-principle calculations for solar cells and other optical applications. The bandgap range varies from 1.6 to 2.1 eV for Ga1−xAlxAs and from 0.8 to 1.5 eV for Ga1−xAlxSb (x= 0.0, 0.25, 0.5, 0.75, 1.0). The dispersion, polarisation, and attenuation have been illustrated in terms of transparency and maximum absorption of light. The inversion of polarised atomic planes near the resonance allows the maximum absorption in ultraviolet to visible region. The Penn’s model (ε1(0) ≈ 1 + (ℏωp/Eg)2) and optical relationε1(0)${\varepsilon_{1}}\left(0\right)$= n2(0) confirm the reliability of our finding. The maximum absorption, optical conduction, and minimum optical energy loss increase the credibility of the studied materials for energy storage device manufacture.

Extruded seven-core tellurium chalcogenide fiber for mid-infrared

A novel tellurium chalcogenide (ChG) multicore fiber has been fabricated via extrusion for the first time. The fiber has seven cores in a hexagonal structure, with one center core surrounded by six other ones. The loss of the fiber is less than 3.5 dB/m in a range of 5-11 µm, and the minimum optical loss is 0.38 dB/m at 6 µm. When light is coupled to each core, the maximum transmission power is up to 1.1 W at 10.6 µm. Supercontinuum spectrum covering 2-12 µm at a bandwidth of -30 dB has been demonstrated. This tellurium ChG multicore fiber shows great potential in the field of high-power laser propagation and wide supercontinuum generation in the mid-infrared.