Millimeter-wave Noise Research Articles

Millimeter-wave noise generation based on a monolithically integrated dual-mode chaotic laser.

A millimeter-wave noise generation scheme is proposed in this paper. The scheme is based on a monolithically integrated dual-mode chaotic laser, which consists of a distributed Bragg feedback (DFB) section, a phase section, and an optical amplification section. The output spectrum state of the dual-mode laser can be controlled by adjusting the injection current in the three regions. The monolithically integrated dual-mode chaotic laser has stable chaotic output and can be used as a light source for integrated millimeter-wave noise source. As a feasibility demonstration, a dual-mode chaotic laser with a mode interval of 2.05 nm was generated in the experiment, the optical mixing on a photodetector produced millimeter-wave noise with a center frequency of 259 GHz and a bandwidth of 44 GHz (237-281 GHz), achieving a typical value of excess noise ratio of 47 dB. It has the advantages of high noise source utilization, small noise source volume, and high integration.

Flat Millimeter-Wave Noise Generation Based on Mixing of Multiple Optical Spectra

Flat Millimeter-Wave Noise Generation Based on Mixing of Multiple Optical Spectra

Broadband and flat millimeter-wave noise source based on the heterodyne of two Fabry-Perot lasers.

We demonstrate a broadband and flat millimeter-wave (MMW) noise source based on the heterodyne of two Fabry-Perot lasers subject to optical feedback. Different mode intervals between two lasers are designed to generate beat terms at specific frequencies. As a proof-of-concept demonstration, a MMW noise signal with a 3-dB bandwidth of 50 GHz (limited by the measurement bandwidth) and flatness of less than 2.9 dB is experimentally achieved. The physical origination of the broadband flat MMW noise generation is analyzed, and the properties of the MMW signal are characterized. The proposed method has the potential to generate a broadband flat noise signal in the MMW or even the terahertz region.

Flat Millimeter-Wave Noise Generation by Optically Mixing Multiple Wavelength-Sliced ASE Lights

We propose a photonic method for flat spectrum millimeter-wave (mm-wave) noise generation. Specifically, the flat spectrum mm-wave noise is obtained by slicing the broadband ASE optical spectrum into multiple Gaussian-shaped spectra with different central wavelengths, then beating in a wideband photomixer. Our simulation demonstrates that flat spectrum mm-wave noise can be generated in a very large range of frequency of F-band (90-140 GHz) and G-band (140-220 GHz). For the quantitative comparison of the quality of generated mm-wave noise, we define the relative flatness ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\eta$ </tex-math></inline-formula> ) as the ratio of the generated noise power fluctuation to its average power within a certain frequency range. Our experimental results show that the relative flatness of the generated mm-wave noise is as low as 0.46 (@35 ± 15 GHz).

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-1-dB minimum noise figure at 36 GHz with an associated gain of 7.5 dB has been achieved. To our knowledge, this is the best noise performance reported in the Ka-band for any GaN device.

Uncertainty of a Millimeter-Wave Variable Noise Source using a Variable Attenuator

We studied a variable noise source using a precision variable attenuator in the frequency range of 50 - 75 GHz, and its uncertainty was analyzed in detail. To determine the noise temperature of the noise source, the variable attenuator was calibrated by the national standard of attenuation in NMIJ. It was proved that the contribution of uncertainty concerning the variable attenuator was considerably small by achieving its precise calibration. This variable noise source can be used as a working standard for the millimeter-wave noise figure measurement.

Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications

Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.

Comments on "Some Pitfalls In Millimeter-wave Noise Measurements Utiking A Cross-correlation Receiver

In the above paper, 1 Sutherland and van der Ziel analyze some problems encountered during noise measurements at very low temperatures with a cross-correlation receiver. It is shown that, if a hybrid junction is used to split the noise signal from the device under test (DUT) into the two receiver channels, the correlation between the receiver input signals, which contains the useful information, vanishes if the remaining port of the hybrid is resistively terminated at a temperature equal to that of the DUT. The same effect occurs for a pure reactive termination, if the isolators used to decouple the receiver channels are also cooled down to the temperature of the DUT.

Some Pitfalls in Millimeter-Wave Noise Measurements Utilizing a Cross-Correlation Receiver

It is shown that the use of a hybrid junction as the power splitter in a cross-correlation receiver for millimeter-wave (94-GHz) noise measurements at low temperature (2 K) introduces an unwanted source of noise which defeats the purpose of the measurements. The same is the case when isolators are introduced to prevent cross-coupling of the noise from the two receiver channels.