Mid-infrared Photodetectors Research Articles

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications.

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.

Mid-infrared waveguide-integrated and photo-thermoelectric graphene photodetector based on germanium-on-silicon platform

Mid-infrared (MIR) photonic integration is desirable in the development of MIR spectroscopy and “lab-on-a-chip” sensing. The germanium-on-silicon (GOS) platform offers a promising solution for MIR photonic integration, extending the operational wavelength to a longer band by eliminating the light-absorbing buried oxide layer. However, MIR photodetectors on the GOS platform remain undeveloped due to the challenging heterogeneous integration of active materials on silicon and inadequate light absorption in the photodetection region. Here, we demonstrate a photo-thermoelectric graphene photodetector on the GOS platform, taking advantage of zero-bias operation and easy heterogeneous integration of graphene. By employing split-gate architecture and plasmonic enhancement to strengthen the light-graphene interaction, we achieve a responsivity of 1.97 V W−1 and noise equivalent power of 2.8 nW Hz−1/2 at the wavelength of 3.7 µm. This work enables waveguide-integrated MIR photodetection on the GOS platform for the first time, and it holds great potential for on-chip MIR sensing and imaging applications.

Mid-infrared photodetector spectrometer concept based on ultrathin all-dielectric metamaterial with azimuth-incidence-angle tuned perfect optical absorption: Design and analysis

Novel concepts for efficient compact spectroscopy are extensively researched due to their fundamental applications in prominent fields such as chemistry, biology, and physics. Here, with an unprecedented spectral-azimuthal resolution, such a concept is introduced and exemplified in the mid-infrared, in which its advantages are paramount and have yet to be established industrially. The concept is based on the design and instrumentation of optical absorption spectral tuning (or sensitivity) to the relative azimuthal component of light impinging on specifically designed metamaterials (MMs). The inversely-designed MMs offer perfect photo-absorption inside λ0/200 ultra-thin layer of lead telluride. Two small-footprint system designs are proposed to instrument the spectral-azimuth-angle tuning for spectrometry. The first is based on a single or few spinning MM layout elements, and the second, to avoid spinning, utilizes a fixed focal-plane-array approach. The latter exploits the inherent variations in the local azimuthal-incidence angle. While low absorption is the Achilles heel of conventional mid-infrared photodetector spectrometers, the optimized MMs, besides their unique spectral-azimuth-angle tuning functionality, provide giant absorption enhancement, facilitating higher resolution and even smaller in-plane form factor. The highlighted concept opens an additional dimension to encode-decode spectral information, yielding profound advantages over conventional designs, such as those based on diffraction gratings.

Plasmonic Photovoltaic Effect of an Original 2D Electron Gas System and Application in Mid‐Infrared Imaging

AbstractOwing to their consistently emerging applications in modern photonics, highly sensitive and rapid mid‐infrared (MIR) photodetectors, operating at high temperatures, are of great significance. Herein, a novel PbTe/Ge heterostructure is introduced. Notably, the discovery of a 2D electron gas (2DEG) system on the surface of the PbTe layer is experimentally identified for the first time. A high‐performance PbTe/Ge heterostructure MIR photodetector utilizing a plasmonic photovoltaic effect is developed by employing asymmetric electrodes. The photodetecting device demonstrates an exceptionally high detectivity of 1.1 × 1011 Jones along with a short response time of 15 ns at room temperature. Additionally, the proposed plasmonic photovoltaic mechanism of the device is investigated and mainly ascribed to the propagating plasmons, generated by the coupling of the 2DEG with incident MIR photons. Moreover, a linear detector array (LDA) of PbTe/Ge is demonstrated for a thermal imaging application, which exhibits promising high‐quality real‐time imaging via the 2D photodetector arrays on Ge‐based integrated circuits. This work opens up a new way for the development of next‐generation, advanced MIR photonic devices and integrated photonic systems.

High-performance uncooled PbSe/CdSe nanostructured mid-infrared photodetector with tunable cutoff wavelength

Room-temperature (RT) high-performance mid-wavelength infrared (MWIR) Lead Selenide (PbSe)/Cadmium Selenide (CdSe) heterostructure nanocrystal photoconductors are designed and fabricated on commercial silicon dioxide on silicon (SiO2/Si) wafer via vapor phase deposition. Tunable absorption edges at 3.75 and 4.0 μm are demonstrated with different sizes of the nanostructure. The devices are annealed in oxygen to make the thin film much more sensitive to MWIR light. The detectors are etched by the reactive ion etching method to define an active area of 17.5 × 20 μm2. All devices exhibit external quantum efficiencies exceeding 100%, a clear indication of photoconductive gain. 1/f noise is the dominating noise source, and it follows Hooge's empirical relation for a homogeneous semiconductor. RT peak specific detectivity (D*) of 2.17 × 1010 and 1.61 × 1010 Jones is achieved for pixels with absorption edge at 3.75 and 4 μm, respectively.

Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed.

The detection of mid-infrared light, covering a variety of molecular vibrational spectra, is critical for both civil and military purposes. Recent studies have highlighted the potential of two-dimensional topological semimetals for mid-infrared detection due to their advantages, including van der Waals (vdW) stacking and gapless electronic structures. Among them, mid-infrared photodetectors based on type-II Dirac semimetals have been less studied. In this paper, we present a silicon waveguide integrated type-II Dirac semimetal platinum telluride (PtTe2) mid-infrared photodetector, and further improve detection performance by using PtTe2-graphene heterostructure. For the fabricated silicon waveguide-integrated PtTe2 photodetector, with an external bias voltage of -10 mV and an input optical power of 86 nW, the measured responsivity is 2.7 A/W at 2004 nm and a 3 dB bandwidth of 0.6 MHz is realized. For the fabricated silicon waveguide-integrated PtTe2-graphene photodetector, as the external bias voltage and input optical power are 0.5 V and 0.13 μW, a responsivity of 5.5 A/W at 2004 nm and a 3 dB bandwidth of 35 MHz are obtained. An external quantum efficiency of 119% can be achieved at an input optical power of 0.376 μW.

Computational study of the structural, mechanical, electronic, optical and thermal properties of BaLiX (X =P, As, Sb) perovskites

This study explores the structural, optical, mechanical, electronic, and thermal characteristics of ionic semiconductor compounds BaLiX (X = P, As, Sb) using Density Functional Theory (DFT). A comprehensive analysis of BaLiX (X = P, As, Sb) is conducted, proving that the estimated and observed lattice parameters coincide well and confirming mechanical stability through elastic stiffness constants. Electronic band structures reveal direct bandgap semiconductor properties with values of 0.70 eV, 0.30 eV, and 0.95 eV for BaLiP, BaLiAs, and BaLiSb, respectively, suggesting specific applications such as mid-infrared photodetectors, terahertz devices, and near-infrared sensors. Optical property analyses, including energy loss function, reflectivity, refractive index, and absorption coefficient, highlight the potential of these materials for optoelectronic and photovoltaic applications. Despite elastic anisotropy, optical anisotropy remains minimal. The materials exhibit potential for use as thermal barrier coatings (TBC) due to their comparatively lower Debye temperature (D), minimum thermal conductivity (Kmin) and lattice thermal conductivity (kph). Moreover, heat capacity calculations and thermal coefficient of expansion are also calculated.

Mid-Infrared Spectrometer Based on Tunable Photoresponses in Pdse2

Mid-infrared (mid-IR) photodetection is important for various applications, including biomedical diagnostics, security, chemical identification, and free-spacing optical communications. However, conventional “photon” mid-IR photodetectors require liquid nitrogen cooling (i.e., MCT). Furthermore, acquiring mid-IR spectra usually involves a complex and expensive Fourier Transform Infrared spectrometer, a tabletop instrument consisting of a meter-long interferometer and MCT detectors, which is not suitable for mobile and compact device applications. In this work, we present tunable photoresponsivity in the mid-IR wavelength in palladium diselenide (PdSe2) – molybdenum disulfide (MoS2) heterostructure field-effect transistors (FETs), operating at room temperature. Furthermore, we applied a tunable membrane cavity to modulate the Fabry–Pérot resonance to modulate the absorption spectrum of the device layer. We used a robust polyetherimide (PEI) membrane with CVD-grown graphene to electrically tune the membrane structure. For the next step, we will integrate the PdSe2-based photodetector and tunable membrane to increase detection sensitivity and spectrum tunability to realize the ‘learning’-based spectroscopy.

Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region

Cutting-edge mid-wavelength infrared (MWIR) sensing technologies leverage infrared photodetectors, memory units, and computing units to enhance machine vision. Real-time processing and decision-making challenges emerge with the increasing number of intelligent pixels. However, current operations are limited to in-sensor computing capabilities for near-infrared technology, and high-performance MWIR detectors for multi-state switching functions are lacking. Here, we demonstrate a non-volatile MoS2/black phosphorus (BP) heterojunction MWIR photovoltaic detector featuring a semi-floating gate structure design, integrating near- to mid-infrared photodetection, memory and computing (PMC) functionalities. The PMC device exhibits the property of being able to store a stable responsivity, which varies linearly with the stored conductance state. Significantly, device weights (stable responsivity) can be programmed with power consumption as low as 1.8 fJ, and the blackbody peak responsivity can reach 1.68 A/W for the MWIR band. In the simulation of Faster Region with convolution neural network (CNN) based on the FLIR dataset, the PMC hardware responsivity weights can reach 89% mean Average Precision index of the feature extraction network software weights. This MWIR photovoltaic detector, with its versatile functionalities, holds significant promise for applications in advanced infrared object detection and recognition systems.

Fourier-transform infrared spectroscopy with undetected photons from high-gain spontaneous parametric down-conversion

Fourier-transform infrared spectroscopy (FTIR) is an indispensable analytical method that allows label-free identification of substances via fundamental molecular vibrations. However, traditional FTIR spectrometers require mid-infrared (MIR) elements, including low-efficiency MIR photodetectors. SU(1,1) interferometry has previously enabled FTIR with undetected MIR photons via spontaneous parametric down-conversion in the low-parametric-gain regime, where the number of photons per mode is much less than one and sensitive photodetectors are needed. In this work, we develop a high-parametric-gain SU(1,1) interferometer for MIR-range FTIR with undetected photons. Using our method, we demonstrate three major advantages: a high photon number at the interferometer output, a considerably lower photon number at the sample, and improved interference contrast. In addition, we broaden the spectral range of the interferometer by aperiodic poling in the gain medium. Exploiting the broadband SU(1,1) interferometer, we measure and evaluate the MIR absorption spectra of polymers in the 3-μm region.

Tunable mid-infrared photodetector based on graphene plasmons controlled by ferroelectric polarization for micro-spectrometer

Surface plasmonic detectors have the potential to be key components of miniaturized chip-scale spectrometers. Graphene plasmons, which are highly confined and gate-tunable, are suitable for in situ light detection. However, the tuning of graphene plasmonic photodetectors typically relies on the complex and high operating voltage based on traditional dielectric gating technique, which hinders the goal of miniaturized and low-power consumption spectrometers. In this work, we report a tunable mid-infrared (MIR) photodetector by integrating of patterned graphene with non-volatile ferroelectric polarization. The polarized ferroelectric thin film provides an ultra-high surface electric field, allowing the Fermi energy of the graphene to be manipulated to the desired level, thereby exciting the surface plasmon polaritons effect, which is highly dependent on the free carrier density of the material. By exciting intrinsic graphene plasmons, the light transmittance of graphene is greatly enhanced, which improves the photoelectric conversion efficiency of the device. Additionally, the electric field on the surface of graphene enhanced by the graphene plasmons accelerates the carrier transfer efficiency. Therefore, the responsivity of the device is greatly improved. Our simulations show that the detectors have a tunable resonant spectral response of 9–14 μm by reconstructing the ferroelectric domain and exhibit a high responsivity to 5.67 × 105 A W−1 at room temperature. Furthermore, we also demonstrate the conceptual design of photodetector could be used for MIR micro-spectrometer application.

Broadband mid-infrared photodetectors utilizing two-dimensional van der Waals heterostructures with parallel-stacked pn junctions

Optimizing the width of depletion region is a key consideration in designing high performance photovoltaic photodetectors, as the electron-hole pairs generated outside the depletion region cannot be effectively separated, leading to a negligible contribution to the overall photocurrent. However, currently reported photovoltaic mid-infrared photodetectors based on two-dimensional heterostructures usually adopt a single pn junction configuration, where the depletion region width is not maximally optimized. Here, we demonstrate the construction of a high performance broadband mid-infrared photodetector based on a MoS2/b-AsP/MoS2 npn van der Waals heterostructure. The npn heterojunction can be equivalently represented as two parallel-stacked pn junctions, effectively increasing the thickness of the depletion region. Consequently, the npn device shows a high detectivity of 1.3 × 1010 cmHz1/2W−1 at the mid-infrared wavelength, which is significantly improved compared with its single pn junction counterpart. Moreover, it exhibits a fast response speed of 12 μs, and a broadband detection capability ranging from visible to mid-infrared wavelengths.

Exploiting in-plane anisotropy in Ta2NiSe5 spanning near to mid-infrared photodetection

Miniaturized and stabilized polarization-sensitive mid-Infrared photodetectors at room temperature are indispensable in fields ranging from medical diagnostics to military surveillance in the next-generation on-chip polarimeters. Emerging two-dimensional materials offer a promising avenue to fulfill these requirements, facilitated by their ease of integration onto complex structures, inherent in-plane anisotropic crystal structures that enhance polarization sensitivity, and robust quantum confinement effects that enable superior photodetection performance at room temperature. Here, we report the systematic investigation of polarization-dependent infrared photoresponse based on Ta2NiSe5, revealing significant anisotropy photocurrent with excellent stability at room temperature. Significantly, a large anisotropic ratio of Ta2NiSe5 ensures the polarization sensitivity achieves a ratio of 1.23 at 1550 nm. Moreover, at 4.6 μm, the device exhibits a peak photocurrent response of 1.16 A/W along the armchair orientation, with an anisotropy ratio of approximately 3.3. These findings not only enhance our understanding of the photophysical mechanisms in two-dimensional materials but also guide the optimization of photodetector design for enhanced performance.

Silicon (100) surface passivation-driven tuning of Ag film crystallinity and its impact on the performance of Ag/n-Si mid-infrared Schottky photodetector

The utilization of metal/semiconductor Schottky devices for plasmonic harvesting of hot carriers holds immense potential in the field of sub-bandgap photodetection. In this work, we explore a surface passivation scheme using air plasma exposure to modify the Si (100) surface and subsequently the crystal orientation of the deposited Ag film for photon detection in the mid-infrared (MIR) regime. This tailoring was achieved by varying the plasma exposure duration (0, 150, 300, 450, and 600 s). As a result, we could tune the crystal orientation of Ag from the (200) to the (210) crystal plane, with the Ag (111) orientation present in all devices. Furthermore, the photo-response behavior under MIR exposure at λ = 4.2 µm was studied both experimentally and using COMSOL simulations. It was observed that both photoelectric (PE) and photothermal (PT) effects contributed to the photo-response behavior of all devices. The Ag/Si device exposed to air plasma for 300 s exhibited the maximum PE-driven response (2.73 µA/W), while the device exposed to air plasma for 600 s showed a significant PT-driven response (13.01 µA/W). In addition, this strategy helped reduce the reverse leakage current by up to 99.5%. This study demonstrates that MIR detection at longer wavelengths can be optimized by tailoring the crystal orientation of the metal film.

Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier

Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature, providing a convenient alternative to Johnson noise thermometry.

High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor

Sensitivity stands as a critical figure of merit in assessing the performance of a photodetector and can be characterized by two distinct parameters: responsivity or detectivity. Simultaneous optimization of these two parameters is essential to ensure the applicability of a single detector across various scenarios, yet it remains a persistent challenge for mid-infrared photodetector. Here, we demonstrate that the construction of a photoconductive detector based on a MoS2/BP/MoS2 npn junction field-effect transistor configuration can effectively balance the tradeoffs between photoresponsivity and detectivity. In this device, the black phosphorus layer serves as the channel, while the top and bottom MoS2 layers act as photogates to boost the photocurrent. Consequently, a high-performance room-temperature-operating mid-infrared photodetector with a responsivity and detectivity reaching 9.04 A W−1 and 5.36 × 109 cm Hz1/2 W−1 (1550 nm), and 7.25 A W−1 and 4.29 × 109 cm Hz1/2 W−1 (3600 nm) is achieved. Our study provides an alternative structural design, enabling the applications of mid-infrared photodetectors across multiple scenarios.

High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature.

HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W-1 and 6.9 × 107 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τr = 1.9 μs and a falling time of τf = 1.5 μs at 10 kHz under 1550 nm light illumination.

Above-77 K operation of charge sensitive infrared phototransistor with dynamically controlled optical gate

Charge sensitive infrared phototransistors (CSIPs) show great promise for sensitive mid-infrared photodetection, extending up to single-photon counting, owing to the built-in amplification mechanism. However, the operating temperature of previously reported CSIPs has been limited to below 30 K. In this work, we propose a technique that enhances the operating temperature to above liquid nitrogen temperature by dynamically controlling the electrostatic potential of the optical floating gate (FG). This control effectively suppresses the annihilation of photogenerated holes in the FG, mitigating the vertical recombination process of thermally excited electrons. We detected the photosignal up to ∼85 K under a photon flux of Φ∼3.6×108 s−1. An outstanding photoresponsivity (R=39.11 A/W) to external blinking light at the peak wavelength of λ=11μm is achieved at 77 K. Our work not only extends the practical application of CSIPs, meeting the high demand for high temperature operation, but also offers more flexibility in fabricating more general highly sensitive phototransistors.

Ge1−xSnx layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping

Ge1−xSnx with x∼25%, group-IV alloy semiconductor, is highly attracted to mid-infrared (MIR) photodetector applications because of its narrow bandgap with ∼0.25 eV, the compatibility to the Si integrated circuit platform, and lattice matching of Ge0.75Sn0.25 to InP substrate. Although the heteroepitaxial growth of Ge0.75Sn0.25 on InP has been reported, the basic physical properties of Ge0.75Sn0.25 have not yet been clarified. In this study, we discuss three topics: (1) understanding the crystalline growth features of Ge0.75Sn0.25 on InP, (2) revealing the thermal stability of Ge0.75Sn0.25, and (3) developing a carrier-control technique. First, we found that a low-temperature molecular beam epitaxy could achieve a Ge0.75Sn0.25 layer with superior crystallinity without dislocations. However, low Sn-content Ge1−xSnx regions are locally formed during the Ge0.75Sn0.25 heteroepitaxy; the origins of the low Sn-content Ge1−xSnx regions were discussed by transmission electron microscopy analysis. In addition, we found that lowering the growth temperature from 100 °C to 70 °C also effectively reduces the area of the low Sn-content Ge1−xSnx regions. Next, we found that Ge0.75Sn0.25 layers grown at 70 °C sustain thermal stability up to 200 °C without causing crystalline degradations. Finally, we demonstrated the in-situ Sb doping to Ge0.75Sn0.25. We found that the undoped and in-situ Sb-doped Ge0.75Sn0.25 layers exhibited p-type and n-type conduction, respectively, with carrier concentrations of order 1019 cm−3 by Hall effect measurement. This study suggests the MIR photodetector application is practically possible using low-temperature processes with process temperatures lower than 200 °C.

Characterization of an uncooled mid-infrared Schottky photodetector based on a 2D Au/PtSi/p-Si nanohole array at a higher light modulation frequency.

In this study, an uncooled 2D nanohole array PtSi/p-Si Schottky mid-infrared (MIR) photodetector, which is essential for on-chip Si-based low-barrier MIR detectors, is presented. Room temperature operation introduces susceptibility to thermal noise and can impact stability. Through modulation frequency and reverse bias optimization, the stability improved by 7 times at 170Hz and -3.5V, respectively. The effective light detection and stability were confirmed through ON/OFF response measurements over a longer time. The wavelength-dependent responsivity, measured with a tunable MIR laser, confirmed the responsiveness of the device in the MIR region of 2.5µm to 4.0µm, with a maximum specific detectivity (D*) of 2.0×103 c m H z 1/2 W -1 at 3.0µm; this result shows its potential applicability for noninvasive human lipid monitoring. Overall, this study focuses on the crucial role of signal analysis optimization in enhancing the performance of MIR photodetectors at room temperature.