Metal Oxide Semiconductor Field Effect Transistor Dosimetry Research Articles

Radiation exposure in cone beam CT measured using a MOSFET and RPLGD dosimeter and Monte Carlo simulation in phantom.

Due to the wide application of the cone beam computed tomography (CBCT) in clinical practice, it is important to assess radiation dose of CBCT more accurately and efficiently in different clinical applications. This study aims to calculate effective and absorbed doses in CBCT measured in an anthropomorphic phantom using computer-based Monte Carlo (PCXMC) software, and to conduct comparative evaluations of MOSFET (metal- oxide- semiconductor field-effect transistor) and radiophotoluminescence glass dosimeters (RPLGD). Effective and absorbed organ doses are compared with those obtained using MOSFET and RPLGD dosimetry in an anthropomorphic phantom given the same exposure settings. Effective and absorbed organ doses from CBCT during scout and main projections are calculated using PCXMC and PCXMCRotation software, respectively. The mean effective dose from CBCT calculated using PCXMC software is 233.8μSv, while the doses calculated using dosimetry (MOSFET and RPLGD) are 266.67μSv and 268.78μSv, respectively. The X-ray source variation is 0.79%. The prescription limits based on the Friedman test for MOSFET and RPLGD pre-points (i.e., in an analytical analysis of diagnostic names in CBCT) are not statistically significant. The calculated correlation coefficient between MOSFET- and RPLGD-derived absorbed dose values with respect to a field of view CBCT parameter of 17×13.5 mm is r = 0.8623. The study demonstrates that the PCXMC software may be used as an alternative to MOSFET and RPLGD dosimetry for effective and absorbed organ dose estimation in CBCT conducted with a large FOV in an anthropomorphic phantom.

Verification of eye lens dose in IMRT by MOSFET measurement

The eye lens is recognized as one of the most radiosensitive structures in the human body. The widespread use of intensity-modulated radiotherapy (IMRT) complicates dose verification and necessitates high standards of dose computation. The purpose of this work was to assess the computed dose accuracy of eye lens through measurements using a metal–oxide–semiconductor field-effect transistor (MOSFET) dosimetry system. Sixteen clinical IMRT plans of head and neck patients were copied to an anthropomorphic head phantom. Measurements were performed using the MOSFET dosimetry system based on the head phantom. Two MOSFET detectors were imbedded in the eyes of the head phantom as the left and the right lens, covered by approximately 5-mm-thick paraffin wax. The measurement results were compared with the calculated values with a dose grid size of 1 mm. Sixteen IMRT plans were delivered, and 32 measured lens doses were obtained for analysis. The MOSFET dosimetry system can be used to verify the lens dose, and our measurements showed that the treatment planning system used in our clinic can provide adequate dose assessment in eye lenses. The average discrepancy between measurement and calculation was 6.7 ± 3.4%, and the largest discrepancy was 14.3%, which met the acceptability criterion set by the American Association of Physicists in Medicine Task Group 53 for external beam calculation for multileaf collimator-shaped fields in buildup regions.

A real‐time in vivo dosimetric verification method for high‐dose rate intracavitary brachytherapy of nasopharyngeal carcinoma

A real-time in vivo dosimetric verification method using metal-oxide-semiconductor field effect transistor (MOSFET) dosimeters has been developed for patient dosimetry in high-dose rate (HDR) intracavitary brachytherapy of nasopharyngeal carcinoma (NPC). The necessary calibration and correction factors for MOSFET measurements in (192)Iridium source were determined in a water phantom. With the detector placed inside a custom-made nasopharyngeal applicator, the actual dose delivered to the tumor was measured in vivo and compared to the calculated values using a commercial brachytherapy planning system. Five MOSFETs were independently calibrated with the HDR source, yielding calibration factors of 0.48 ± 0.007 cGy∕mV. The maximum sensitivity variation was no more than 7% in the clinically relevant distance range of 1-5 cm from the source. A total of 70 in vivo measurements in 11 NPC patients demonstrated good agreement with the treatment planning. The mean differences between the planned and the actually delivered dose within a single treatment fraction were -0.1% ± 3.8% and -0.1% ± 3.7%, respectively, for right and left side assessments. The maximum dose deviation was less than 8.5%. In vivo measurement using the real-time MOSFET dosimetry system is possible to evaluate the actual dose to the tumor received by the patient during a treatment fraction and thus can offer another line of security to detect and prevent large errors.

Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry

The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ~25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Calibration precision was measured to be better than 5%-7%, 3%-5%, and 2%-4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy(-1) versus the CT scatter phantom 29.2 ± 1.0 mV cGy(-1) and FIA with x-ray 29.9 ± 1.1 mV cGy(-1) methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ~3000 mV. The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the eventual use for phantom dosimetry, a measurement error ~12% will be reflected in the dosimetry results. The calibration process must emulate the eventual CT dosimetry process by matching or excluding scatter when calibrating the MOSFETs. Finally, the authors recommend that the MOSFETs are energy calibrated approximately every 2500-3000 mV.

Real-Time In Vivo Dosimetry With MOSFET Detectors in Serial Tomotherapy for Head and Neck Cancer Patients

A real-time dose verification method using a recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) of intensity-modulated radiation therapy (IMRT). Following the investigation of key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field size, beam incident angles and radiation energy spectrum), the feasibility of this detector in IMRT dose verification was demonstrated by comparison with ion chamber measurements taken in an IMRT QA phantom. Real-time in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. MOSFET sensitivity did not change with SSD. For field sizes smaller than 20 × 20 cm(2), MOFET sensitivity varied within 1.0%. The detector angular response was isotropic within 2% over 360°, and the observed sensitivity variation due to changes in the energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at all points in IMRT phantom plan verification, within 5%. The mean difference between 48 IMRT MOSFET-measured doses and calculated values in 8 patients was 3.33% and ranged from -2.20% to 7.89%. More than 90% of the total measurements had deviations of less than 5% from the planned doses. The MOSFET dosimetry system has been proven to be an effective tool in evaluating the actual dose within individual patients during IMRT treatment.

Evaluation of clinical use of OneDose metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia

Background:Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to their bone marrow transplant. It involves the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore, it is important to measure and monitor the skin dose during the treatment. Thermoluminescent dosimeters (TLDs) and the OneDose™ metal oxide semiconductor field effect transistor (MOSFET) detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose.Aims:The primary goal of this study was to measure the variation of skin dose using OneDose MOSFET detectors and TLD detectors, and compare the results with the target prescribed dose. The secondary aim was to evaluate the simplicity of use and determine if one system was superior to the other in clinical use.Material and Methods:The measurements involved twelve adult patients diagnosed with acute lymphoblastic leukemia. TLD and OneDose MOSFET dosimetry were performed at ten different anatomical sites of each patient.Results:The results showed that there was a variation between skin dose measured with OneDose MOSFET detectors and TLD in all patients. However, the variation was not significant. Furthermore, the results showed for every anatomical site there was no significant different between the prescribed dose and the dose measured by either TLD or OneDose MOSFET detectors.Conclusion:There were no significant differences between the OneDose MOSFET and TLDs in comparison to the target prescribed dose. However, OneDose MOSFET detectors give a direct read-out immediately after the treatment, and their simplicity of use to compare with TLD detectors may make them preferred for clinical use.

Comparison of peripheral dose measurements using Ionization chamber and MOSFET detector

Background In radiation therapy, the peripheral dose (PD) – the dose outside the geometric boundaries of the radiation field – is of clinical importance. A metal oxide semiconductor field effect transistor (MOSFET) detector is used to estimate the peripheral dose. Aim The aim of this study is to investigate the ability of a MOSFET dosimetry system to accurately measure doses in peripheral regions of high energy X-ray beams. Materials & Methods The accuracy of the MOSFET system is evaluated by comparing peripheral region dose measurement with the results of standard ionization chamber measurements. Furthermore, the measurement of PD using a MOSFET detector helps us to keep the tolerance dose of any critical organ closer to the treatment field within the acceptable limits. The measurements were carried out using a 0.6 cc Farmer type ionization chamber and MOSFET 20 dosimetry system for field sizes ranging from 5 × 5 cm 2 to 20 × 20 cm 2 at three depths of 1.5 cm, 5 cm and 10 cm in a blue water phantom. PD were measured at distances varying from 1 cm to 30 cm from the field edges along the x axis for the open fields, with collimator rotation and with beam modifiers like 15 degree, 30 degree and 45 degree wedges. Results The results show a good agreement of measured dose by both methods for various field sizes, collimator rotation and wedges. Conclusion The MOSFET detector has a compact construction, provides instant readout, is of minimal weight and can be used on any surface.

SU‐FF‐T‐64: Characterization of MOSFET Dosimetry System for Source Position Verification in HDR Brachytherapy

Purpose: To test the Metal‐Oxide‐Semiconductor Field Effect Transistor (MOSFET)‐based method for HDR Brachytherapy source tracking and to assess how accuracy and precision of the method changes with the MOSFET reading fluctuations and the number of dosimeters. Methods and Materials: Three standard MOSFET dosimeters connected to a high sensitivity bias supply were placed at fixed positions, 3 to 7 cm from the Ir‐192 source, driven by a Remote Afterloader (VariSource iX, Varian Medical Systems Inc.), within a solid water phantom. Six source dwell positions were planned. MOSFETs calibration was performed at a distance of 3 cm from source. MOSFET characteristics, including energy and angular dependence, dose linearity and reading variation in time, were established. A Matlab optimization code, based on the minimizing the sum of the normalized squared differences between the measured and analytically calculated dose values, was developed for source position calculation. Randomly generated measurement errors 1 to 8% were added to MOSFET readings to assess the method accuracy and precision degradation. The effect of the MOSFETs number on the system performance was also studied. Results: Measurements with three MOSFETs result in 0.2 to 1.9 mm deviations between calculated and actual source positions, with average of 0.8 mm. If fluctuations added to the MOSFET readings are of 1% of the reading value, accuracy of (0.7±0.3) mm is achieved, while fluctuations of 8% result in (5.2±2.6) mm accuracy. Increase in the number of MOSFETs until 12 results in improved accuracy of (0.3±0.2) mm and (2.9±1.5) mm for 1% and 8% high fluctuations, correspondingly. Conclusions: The study showed the potential of the method to verify the position the HDR Ir‐192 and to improve the quality control in HRD Brachytherapy. Increasing the number of MOSFET detectors improves the accuracy of the method even for higher MOSFET reading uncertainties.

MOSFET Dosimetry for Radiation Dose Assessment of Bismuth Shielding of the Eye in Children

The purpose of our study was to measure radiation dose to the orbit during pediatric cranial CT with and without bismuth shielding using a novel dosimetry system. Cranial CT was performed on a pediatric anthropomorphic phantom, with and without bismuth eye shields. A solid-state metal oxide semiconductor field effect transistor (MOSFET) dosimeter was used to obtain real-time dose measurements. Bismuth shielding reduced radiation dose to the eye by up to 42%; shield artifact fell outside the diagnostic area of interest.

Effects of temperature variation on MOSFET dosimetry

This note investigates temperature effects on dosimetry using a metal oxide semiconductor field effect transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown that the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 °C up to 40 °C. Thus standard irradiations performed at room temperature can be directly compared to in vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependent on the dose history of the MOSFET dosimeter. However, the variation can be accounted for in the measurement method. For accurate dosimetry, the detector should be placed for approximately 60 s on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 s after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established.

Feasibility study of online high-spatial-resolution MOSFET dosimetry in static and pulsed x-ray radiation fields

Improvements have been made in the measurement of dose profiles in several types of X-ray beams. These include 120-kVp X-ray beams from an orthovoltage X-ray machine, 6-MV Bremsstrahlung from a medical LINAC in conformal mode and the 50-200 keV energy spectrum of microbeams produced at the medical beamline station of the European Synchrotron Radiation Facility. Using a quadruple metal-oxide-semiconductor field-effect transistor (MOSFET) sensor chip in "edge on" mode together with a newly developed sensor readout system, the feasibility of online scanning of the profiles of quasi-static and pulsed radiation beams was demonstrated. Measurements of synchrotron pulsed microbeams showed that a micrometer-scale spatial resolution was achievable. The use of several MOSFETs on the same chip gave rise to the correction of misalignments of the oxide films of the sensor with respect to the microbeam, ensuring that the excellent spatial resolution of the MOSFET used in "edge-on" mode was fully utilized.

MOSFET dosimetry of an X-ray microbeam

A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic/sup TM/ film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is estimated to be 1 /spl mu/m and appears to be limited by the width of the gate oxide thickness.

Calibration of a MOSFET Detection System for 6-MV In Vivo Dosimetry

Purpose: Metal oxide semiconductor field-effect transistor (MOSFET) detectors were calibrated to perform in vivo dosimetry during 6-MV treatments, both in normal setup and total body irradiation (TBI) conditions. Methods and Materials: MOSFET water-equivalent depth, dependence of the calibration factors (CFs) on the field sizes, MOSFET orientation, bias supply, accumulated dose, incidence angle, temperature, and spoiler-skin distance in TBI setup were investigated. MOSFET reproducibility was verified. The correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was studied. MOSFET midplane dosimetry in TBI setup was compared with thermoluminescent dosimetry in an anthropomorphic phantom. By using ionization chamber measurements, the TBI midplane dosimetry was also verified in the presence of cork as a lung substitute. Results: The water-equivalent depth of the MOSFET is about 0.8 mm or 1.8 mm, depending on which sensor side faces the beam. The field size also affects this quantity; Monte Carlo simulations allow driving this behavior by changes in the contaminating electron mean energy. The CFs vary linearly as a function of the square field side, for fields ranging from 5 × 5 to 30 × 30 cm 2. In TBI setup, varying the spoiler-skin distance between 5 mm and 10 cm affects the CFs within 5%. The MOSFET reproducibility is about 3% (2 SD) for the doses normally delivered to the patients. The effect of the accumulated dose on the sensor response is negligible. For beam incidence ranging from 0° to 90°, the MOSFET response varies within 7%. No monotonic correlation between the sensor response and the temperature is apparent. Good correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was found (the correlation coefficient is about 1). The MOSFET midplane dosimetry relevant to the anthropomorphic phantom irradiation is in agreement with TLD dosimetry within 5%. Ionization chamber and MOSFET midplane dosimetry in inhomogeneous phantoms are in agreement within 2%. Conclusion: MOSFET characteristics are suitable for the in vivo dosimetry relevant to 6-MV treatments, both in normal and TBI setup. The TBI midplane dosimetry using MOSFETs is valid also in the presence of the lung, which is the most critical organ, and allows verifying that calculation of the lung attenuator thicknesses based only on the density is not correct. Our MOSFET dosimetry system can be used also to determine the surface dose by using the water-equivalent depth and extrapolation methods. This procedure depends on the field size used.