Metal Oxide Semiconductor Field Effect Transistor Detectors Research Articles

Contralateral breast radiation doses in breast cancer patients treated with helical tomotherapy.

We aimed to evaluate contralateral breast doses calculated with a Treatment Planning System (TPS) and verified with metal oxide semiconductor field effect transistor (MOSFET) detectors in patients with early-stage breast cancer (BC) who received helical tomotherapy (HT) after breast-conserving surgery. The dosimetric data of 30 patients (15 left-sided and 15 right-sided) with BC treated with 50.4 Gy to the whole breast and 64.4 Gy to the tumor bed in 28 fractions were analyzed. TPS doses were calculated and MOSFET doses were measured in the contralateral breast (CB) at cranial, caudal, and midpoint and 2 cm lateral to the central point. TPS and MOSFET doses were compared in the entire cohort as well as by tumor location (inner vs outer quadrant) and planning target volume of the breast (<1200 cc vs ≥1200 cc). The average doses at superior, inferior, central, and lateral points calculated with the TPS were 0.26 ± 0.15 cGy, 0.21 ± 0.09 cGy, 0.65 ± 0.14 cGy, and 0.50 ± 0.11 cGy, respectively, and were 0.37 ± 0.16 cGy, 0.34 ± 0.12 cGy, 0.60 ± 0.18 cGy, and 0.34 ± 0.15 cGy, respectively in MOSFET readings. Except for the central point, TPS-calculated doses and MOSFET readings were differed. The doses to the CB in patients with inner and outer quadrant tumors were not significantly different. In patients with large breasts, MOSFET doses were higher at superior and lateral points than TPS doses, but TPS doses were greater at inferior points. MOSFET readings were higher than TPS calculated doses in patients with inner or outer quadrant tumors in small or large breast volumes. The dose calculated by the TPS and that measured by MOSFET differed by a very small amount. The maximum dose to the CB administered at the midpoint was 1.8 Gy, as calculated using the TPS and confirmed using MOSFET detectors, in patients with early-stage BC undergoing breast-only radiotherapy with HT.

Dose calculation of 3D printing lead shield covered by biocompatible silicone for electron beam therapy.

This study aims to calculate the dose delivered to the upstream surface of a biocompatible flexible absorber covering lead for electron beam treatment of skin and subcutaneous tumour lesions for head and neck. Silicone (Ecoflex™ 00-30, Smooth-On, Easton, PA, USA) was used to cover the lead to absorb backscattered electrons from lead. A 3D printer (Zortrax M300, Zortrax, Olsztyn, Poland) was used to fabricate the lead shield. Analytic calculation, simplified Monte Carlo (MC) simulation, and detailed MC simulation which includes a modeling of metal-oxide-semiconductor field-effect transistor (MOSFET) detector were performed to determine the electron backscatter factor (EBF) for 6MeV and 9MeV electron beams of a Varian iX Silhouette. MCNP6.2 was used to calculate the EBF and corresponding measurements were carried out by using MOSFET detectors. The EBF was experimentally measured by the ratio of dose at the upstream surface of the silicone to the same point without the presence of the lead shield. The results derived by all four methods agreed within 2.8% for 6MeV and 3.4% for 9MeV beams. In detailed MC simulations, for 6MeV, dose to the surface of 7-mm-thick absorber was 103.7 [Formula: see text] 1.9% compared to dose maximum (Dmax) without lead. For 9MeV, the dose to the surface of the 10-mm-thick absorber was 104.1 [Formula: see text] 2.1% compared to Dmax without lead. The simplified MC simulation was recommended for practical treatment planning due to its acceptable calculation accuracy and efficiency. The simplified MC simulation was completed within 20min using parallel processing with 80 CPUs, while the detailed MC simulation required 40h to be done. In this study, we outline the procedures to use the lead shield covered by silicone in clinical practice from fabrication to dose calculation.

CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

A complementary metal–oxide–semiconductor (CMOS) plasmon detector using metal–oxide–semiconductor field–effect transistors (MOSFETs) biased at three different body voltages is proposed for high sensitivity and a wide dynamic range. The detection core consists of three differential MOSFET detectors biased at different body voltages based on the photoresponse variation depending on the body potential. The sensitivity of the proposed detector is improved through an increase in the nonlinearity owing to the uses of transistors biased by negative body voltages, and the dynamic range of the detector is widened through the parallel-connected detectors individually biased at different body voltages. A 200-GHz signal is simultaneously incident to the detection cores configured in-parallel through the integrated differential antenna, and DC voltages converted using the different photoresponsivity of the cores are current-combined at the preamplifier and amplified with a three-stage folded-cascode operational amplifier. Simulation and measurement results of the proposed detector designed using TSMC 0.25- $\mu \text{m}$ CMOS technology show that the negative body-biasing (set to 0, −0.2, and −0.4 V), in the MOSFET can improve the voltage responsivity of 2.63 times, the sensitivity by 2.9-fold compared to zero body-biasing, reaching a dynamic range of 11.1% in the CMOS plasmon detector. Raster-scanned imaging for 60- $\mu \text{m}$ thick copper tapes with a line width of 6–12 mm attached to 10-mm thick Styrofoam demonstrates that the signal-to-noise ratio of 200-GHz images can be improved from 25.5 dB to 30.6 dB when using the proposed detector with three different body-biased MOSFETs.

Verification of angular dependence in MOSFET detector

In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of meas-urement, as well as easy handling. Nevertheless, its true differential is to allow reading of dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in the patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Exper-imental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (±1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient.

Verification of eye lens dose in IMRT by MOSFET measurement

The eye lens is recognized as one of the most radiosensitive structures in the human body. The widespread use of intensity-modulated radiotherapy (IMRT) complicates dose verification and necessitates high standards of dose computation. The purpose of this work was to assess the computed dose accuracy of eye lens through measurements using a metal–oxide–semiconductor field-effect transistor (MOSFET) dosimetry system. Sixteen clinical IMRT plans of head and neck patients were copied to an anthropomorphic head phantom. Measurements were performed using the MOSFET dosimetry system based on the head phantom. Two MOSFET detectors were imbedded in the eyes of the head phantom as the left and the right lens, covered by approximately 5-mm-thick paraffin wax. The measurement results were compared with the calculated values with a dose grid size of 1 mm. Sixteen IMRT plans were delivered, and 32 measured lens doses were obtained for analysis. The MOSFET dosimetry system can be used to verify the lens dose, and our measurements showed that the treatment planning system used in our clinic can provide adequate dose assessment in eye lenses. The average discrepancy between measurement and calculation was 6.7 ± 3.4%, and the largest discrepancy was 14.3%, which met the acceptability criterion set by the American Association of Physicists in Medicine Task Group 53 for external beam calculation for multileaf collimator-shaped fields in buildup regions.

Experience of using MOSFET detectors for dose verification measurements in an end-to-end 192Ir brachytherapy quality assurance system

PurposeEstablishment of an end-to-end system for the brachytherapy (BT) dosimetric chain could be valuable in clinical quality assurance. Here, the development of such a system using MOSFET (metal oxide semiconductor field effect transistor) detectors and experience gained during 2 years of use are reported with focus on the performance of the MOSFET detectors. Methods and MaterialsA bolus phantom was constructed with two implants, mimicking prostate and head & neck treatments, using steel needles and plastic catheters to guide the 192Ir source and house the MOSFET detectors. The phantom was taken through the BT treatment chain from image acquisition to dose evaluation. During the 2-year evaluation-period, delivered doses were verified a total of 56 times using MOSFET detectors which had been calibrated in an external 60Co beam. An initial experimental investigation on beam quality differences between 192Ir and 60Co is reported. ResultsThe standard deviation in repeated MOSFET measurements was below 3% in the six measurement points with dose levels above 2 Gy. MOSFET measurements overestimated treatment planning system doses by 2–7%. Distance-dependent experimental beam quality correction factors derived in a phantom of similar size as that used for end-to-end tests applied on a time-resolved measurement improved the agreement. ConclusionsMOSFET detectors provide values stable over time and function well for use as detectors for end-to-end quality assurance purposes in 192Ir BT. Beam quality correction factors should address not only distance from source but also phantom dimensions.

SU‐G‐IeP3‐02: Characteristics of In‐Vivo MOSFET Dosimeters for Diagnostic X‐Ray Low‐Dose Measurements

Purpose:To correct in‐vivo metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters dependence on X‐ray energy, dose and dose rate, and temperature in order to measure doses or exposures on several anatomic points of interest undergoing some routine radiographs.Methods:A mobile MOSFET system (BEST Medical) was carefully calibrated with X‐ray at kVp of 70, 80, 100, 120, and 138 kVp, phantom temperatures at 0, 21, and 43 oC, and exposure range from 0.01 to 10 R confirmed with Raysafe and RadCal dosimeters. The MOSFETS were placed on the midline bladder or uterus, left pelvic iliac artery, left abdominal above iliac crest, abdominal midline anterior at inferior margin of stomach, and left pectoral of a large and a small body‐size cadavers undergoing AP/PA chest and lumber spine radiographs using manual and automatic exposure control (AEC) with and without lead shielding. MOSTFETs and TLD chips were also placed on the stomach, sigmoid, pubic symphysis, left and right pelvic walls of another cadaver for AP pelvic manual or AEC radiography prior to and after a left hip metal implant.Results:Individual MOSFET detectors had various low‐dose limits in ranged from 0.03 to 0.08 R, nonlinear response to X‐ray energy, and significant temperature effect of 15%. By accumulating 10 manual exposures and 20 AEC exposures, we achieved dose measured accuracy of 6%. There were up to 8 fold increases for AEC exposure of spine and chest X‐ray procedure from no shielding to with shielding. For pelvic radiography, exposure to public symphysis was the highest even higher than that of the skin. After hip implant, AEC pelvic radiograph increase exposure by 30 to 200% consistent with results of TLDs.Conclusion:Dependence of energy, temperature and dose limit were accurately corrected. We have found significant exposure for those clinical pr°ocedures and the study provided evidences for developing new clinical procedures.

Characterization of MOSFET Dosimeter Angular Response Using a Spherical Phantom for Fluoroscopic Dosimetry.

Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) dosimeters, placed in anthropomorphic phantoms, are a standard method for organ dosimetry in medical x-ray imaging applications. However, many x-ray applications, particularly fluoroscopy procedures, use variable projection angles. During dosimetry, the MOSFET detector active area may not always be perpendicular to the x-ray beam. The goal of this study was to characterize the dosimeter's angular response in the fluoroscopic irradiation involved in pediatric cardiac catheterization procedures, during which a considerable amount of fluoroscopic x-ray irradiation is often applied from various projection angles. A biological x-ray irradiator was used to simulate the beam quality of a biplane fluoroscopy imaging system. A custom-designed acrylic spherical scatter phantom was fabricated to measure dosimeter response (in mV) in two rotational axes, axial (ψ) and normal-to-axial (θ), in 30° increments, as well as four common oblique angles used in cardiac catheterization: a) 90° Left Anterior Oblique (LAO); b) 70° LAO/ 20° Cranial; c) 20° LAO/ 15° Cranial; and d) 30° Right Anterior Oblique (RAO). All results were normalized to the angle where the dosimeter epoxy is perpendicular to the beam or the Posterior-Anterior projection angle in the clinical setup. The relative response in the axial rotation was isotropic (within ± 10% deviation); that in the normal-to-axial rotation was isotropic in all angles except the ψ = 270° angle, where the relative response was 83 ± 9%. No significant deviation in detector response was observed in the four common oblique angles, with their relative responses being: a) 102 ± 3%; b) 90 ± 3%; c) 92 ± 3%; and d) 95 ± 3%, respectively. These angular correction factors will be used in future dosimetry studies for fluoroscopy. The spherical phantom may be useful for other applications, as it allows the measurement of dosimeter response in virtually all angles in the 3-dimensional spherical coordinates.

Characterization of MOSFET Detectors for In Vivo Dosimetry in Interventional Radiology and for Dose Reconstruction in Case of Overexposure

As MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detectors allow dose measurements in real time, the interest in these dosimeters is growing. The aim of this study was to investigate the dosimetric properties of commercially available TN-502RD-H MOSFET silicon detectors (Best Medical Canada, Ottawa, Canada) in order to use them for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure. Reproducibility of the measurements, dose rate dependence, and dose response of the MOSFET detectors have been studied with a Co source. Influence of the dose rate, frequency, and pulse duration on MOSFET responses has also been studied in pulsed x-ray fields. Finally, in order to validate the integrated dose given by MOSFET detectors, MOSFETs and TLDs (LiF:Mg,Cu,P) were fixed on an Alderson-Rando phantom in the conditions of an interventional neuroradiology procedure, and their responses have been compared. The results of this study show the suitability of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of accident, provided a well-corrected energy dependence, a pulse duration equal to or higher than 10 ms, and an optimized contact between the detector and the skin of the patient are achieved.

SU-E-J-31: Direct Point Dose Verification Using IGRT for Actual Beam Delivery.

In radiation therapy, treatment planning for patients is performed using pre-acquired CT images. However, many patients with head-and-neck (H&N) cancer have tumor shrinkage and/or weight loss during their treatment course. Daily positional error of patients also causes unexpected deviations from the planning. Thus, it is essential to evaluate actual delivered dose for accurate clinical dosimetric consequence. In this study, actual delivered dose for an H&N site was determined by direct point dose measurement with metal-oxide-semiconductor field-effect transistor (MOSFET) detectors using IGRT procedure. We experimentally evaluated usefulness of the IGRT procedure for accurate irradiations. Treatment processes from planning to beam delivery were performed for an H&N site of an anthropomorphic phantom. The MOSFET detectors were fixed inside the phantom in advance. Then, the anthropomorphic phantom was immobilized with a mould and mask and scanned by simulation-CT. Beam irradiation condition was field size of 12 cm × 12 cm, gantry angle of 0°, 90° and 330°, and 6 MV X-ray. Dose distribution was calculated with superposition algorithm with 2 mm calculation grid. Before the dose measurement, the anthropomorphic phantom was positioned using a localization system of mega-voltage cone-beam CT (MVCBCT). The MOSFET detectors were exposed five times according to a treatment plan. Measured doses with the MOSFET detectors were compared with calculated doses. Using the MVCBCT, the set-up of the anthropomorphic phantom was achieved within 1 mm in all directions of anterior/posterior, left/right, and superior/inferior. The calculated doses agreed well to the measured doses within ±3% even in evaluated region with high dose gradient. The actual delivered dose for an H&N site of an anthropomorphic phantom was evaluated experimentally with the MOSFET detectors. The IGRT procedure was useful for accurate irradiations.

Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry

The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ~25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Calibration precision was measured to be better than 5%-7%, 3%-5%, and 2%-4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy(-1) versus the CT scatter phantom 29.2 ± 1.0 mV cGy(-1) and FIA with x-ray 29.9 ± 1.1 mV cGy(-1) methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ~3000 mV. The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the eventual use for phantom dosimetry, a measurement error ~12% will be reflected in the dosimetry results. The calibration process must emulate the eventual CT dosimetry process by matching or excluding scatter when calibrating the MOSFETs. Finally, the authors recommend that the MOSFETs are energy calibrated approximately every 2500-3000 mV.

In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity

When in vivo proton dosimetry is performed with a metal‐oxide semiconductor field‐effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth‐output curve for a mono‐energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMCMOSFET). The SMCMOSFET output value at an arbitrary point was compared with the value obtained by the conventional SMCPPIC, which calculates proton dose distributions by using the depth‐dose curve determined by a parallel‐plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMCPPIC results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector.PACS number: 87.56.‐v

Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in HDR brachytherapy

The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±10%. For cervix cases 42% of measured doses agreed with the TPS within ±10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy.

Surface dose measurement for helical tomotherapy

To compare the surface dose measurements made by different dosimeters for the helical tomotherapy (HT) plan in the case of the target close to the surface. Surface dose measurements in different points for the HT plan to deliver 2 Gy to the planning target volume (PTV) at 5 mm below the surface of the cylindrical phantom were performed by radiochromic films, single use metal oxide semiconductor field-effect transistor (MOSFET) dosimeters, silicon IVD QED diode, and optically stimulated luminescence (OSL) dosimeters. The measured doses by all dosimeters were within 12 +/- 8% difference of each other. Radiochromic films, EBT, and EBT2, provide high spatial resolution, although it is difficult to get accurate measurements of dose. Both the OSL and QED measured similar dose to that of the MOSFET detectors. The QED dosimeter is promising as a reusable on-line wireless dosimeter, while the OSL dosimeters are easier to use, require minimum setup time and are very precise.

Influence of structural defects on thermostability and radiation sensitivity of Si MOSFET dosimeters

The metal oxide semiconductor field effect transistor (MOSFET) dosimeters have recently become commercially available. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices, and circuits has been a major theme of many articles. The purpose of this study was to investigate the influence of structural defects on thermostability and radiation sensitivity of Si MOSFET dosimeters. It was shown that the near-surface layers of silicon have a complex defective structure which consists from the disordered layer of silicon and the layer of dislocation networks. Grain boundaries of disordered layer form additional energy levels close to the midgap of silicon. These states are ionized under radiation effect and form positive charge. This positive radiation-induced charge becomes additional to the oxide charge and it changes (increases) radiation sensitivity of Si MOSFET detectors. However, these states are the additional source of charge carriers under temperature increasing and lead to changing of detector’s parameters.

Proton dose distribution measurements using a MOSFET detector with a simple dose‐weighted correction method for LET effects

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth‐dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high‐bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L‐shaped bolus. The dose reproducibility, angular dependence and depth‐dose response were evaluated using a 190 MeV proton beam. Depth‐output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose‐weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L‐shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors.PACS number: 87.56.‐v

Real-Time In Vivo Dosimetry With MOSFET Detectors in Serial Tomotherapy for Head and Neck Cancer Patients

A real-time dose verification method using a recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) of intensity-modulated radiation therapy (IMRT). Following the investigation of key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field size, beam incident angles and radiation energy spectrum), the feasibility of this detector in IMRT dose verification was demonstrated by comparison with ion chamber measurements taken in an IMRT QA phantom. Real-time in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. MOSFET sensitivity did not change with SSD. For field sizes smaller than 20 × 20 cm(2), MOFET sensitivity varied within 1.0%. The detector angular response was isotropic within 2% over 360°, and the observed sensitivity variation due to changes in the energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at all points in IMRT phantom plan verification, within 5%. The mean difference between 48 IMRT MOSFET-measured doses and calculated values in 8 patients was 3.33% and ranged from -2.20% to 7.89%. More than 90% of the total measurements had deviations of less than 5% from the planned doses. The MOSFET dosimetry system has been proven to be an effective tool in evaluating the actual dose within individual patients during IMRT treatment.

Evaluation of clinical use of OneDose metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia

Background:Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to their bone marrow transplant. It involves the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore, it is important to measure and monitor the skin dose during the treatment. Thermoluminescent dosimeters (TLDs) and the OneDose™ metal oxide semiconductor field effect transistor (MOSFET) detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose.Aims:The primary goal of this study was to measure the variation of skin dose using OneDose MOSFET detectors and TLD detectors, and compare the results with the target prescribed dose. The secondary aim was to evaluate the simplicity of use and determine if one system was superior to the other in clinical use.Material and Methods:The measurements involved twelve adult patients diagnosed with acute lymphoblastic leukemia. TLD and OneDose MOSFET dosimetry were performed at ten different anatomical sites of each patient.Results:The results showed that there was a variation between skin dose measured with OneDose MOSFET detectors and TLD in all patients. However, the variation was not significant. Furthermore, the results showed for every anatomical site there was no significant different between the prescribed dose and the dose measured by either TLD or OneDose MOSFET detectors.Conclusion:There were no significant differences between the OneDose MOSFET and TLDs in comparison to the target prescribed dose. However, OneDose MOSFET detectors give a direct read-out immediately after the treatment, and their simplicity of use to compare with TLD detectors may make them preferred for clinical use.

Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET

To study the peripheral dose (PD) from high-energy photon beams in radiotherapy using the metal oxide semiconductor field effect transistor (MOSFET) dose verification system. The radiation dose absorbed by the MOSFET detector was calculated taking into account the manufacturer's Correction Factor, the Calibration Factor and the threshold voltage shift. PD measurements were carried out for three different field sizes (5 cm × 5 cm, 10 cm × 10 cm and 15 cm × 15 cm) and for various depths with the source to surface distance set at 100 cm. Dose measurements were realized on the central axis and then at distances (1 to 18 cm) parallel to the edge of the field, and were expressed as the percentage PD (% PD) with respect to the maximum dose (d(max)). The accuracy of the results was evaluated with respect to a calibrated 0.3 cm(3) ionization chamber. The reproducibility was expressed in terms of standard deviation (s) and coefficient of variation. % PD is higher near the phantom surface and drops to a minimum at the depth of d(max), and then tends to become constant with depth. Internal scatter radiation is the predominant source of PD and the depth dependence is determined by the attenuation of the primary photons. Closer to the field edge, where internal scatter from the phantom dominates, the % PD increases with depth because the ratio of the scatter to primary increases with depth. A few centimeters away from the field, where collimator scatter and leakage dominate, the % PD decreases with depth, due to attenuation by the water. The % PD decreases almost exponentially with the increase of distance from the field edge. The decrease of the % PD is more than 60% and can reach up to 90% as the measurement point departs from the edge of the field. For a given distance, the % PD is significantly higher for larger field sizes, due to the increase of the scattering volume. Finally, the measured PD obtained with MOSFET is higher than that obtained with an ionization chamber with percentage differences being from 0.6% to 34.0%. However, when normalized to the central d(max) this difference is less than 1%. The MOSFET system, in the early stage of its life, has a dose measurement reproducibility of within 1.8%, 2.7%, 8.9% and 13.6% for 22.8, 11.3, 3.5 and 1.3 cGy dose assessments, respectively. In the late stage of MOSFET life the corresponding values change to 1.5%, 4.8%, 11.1% and 29.9% for 21.8, 2.9, 1.6 and 1.0 cGy, respectively. Comparative results acquired with the MOSFET and with an ionization chamber show fair agreement, supporting the suitability of this measurement for clinical in vivo dosimetry.

Early First Trimester Fetal Dose Estimation Method in a Multivendor Study of 16- and 64-MDCT Scanners and Low-Dose Imaging Protocols

The purpose of this study was to corroborate the relation between the estimated absorbed fetal dose derived from directly measured uterine doses early in the first trimester and the volume CT dose index (CTDI(vol)) for 16- and 64-MDCT of the maternal chest, abdomen, and pelvis. Estimated absorbed fetal dose was measured with a metal oxide semiconductor field effect transistor (MOSFET) dosimeter placed in the expected uterine location in an anthropomorphic phantom of a woman and scanned with 16- and 64-MDCT units of one vendor and a 64-MDCT unit of another vendor. A trauma chest, abdomen, and pelvis protocol and an abdomen and pelvis protocol were used. Absorbed uterine dose was measured directly from the MOSFET detector. The CTDI(vol) for each protocol was recorded from the scanner console. Correlation between mean uterine dose and CTDI(vol) was tested with a goodness of fit model. The absorbed uterine dose ranged from 9.25 to 37.7 mGy. Absorbed fetal dose in the early first trimester correlated with CTDI(vol) in a linear regression equation. For the 16-MDCT scanner, at 130 kVp, the fetal dose was 2.091 x CTDI(vol) - 9.489. For the 64-MDCT scanner from the same vendor, at 120 kVp, the fetal dose was 1.113 x CTDI(vol) + 1.773. For the 64-MDCT scanner from the other vendor, at 120 kVp, the fetal dose was 1.378 x CTDI(vol) - 1.014. The goodness of fit results (R(2)) for the equations were 0.97, 0.98, and 0.99. Estimated absorbed fetal dose during the first trimester of pregnancy is linearly associated with CTDI(vol) regardless of beam energy, detector configuration, and scanner manufacturer.