Metal-clad Ridge-waveguide Laser Research Articles

Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm

GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA. >

Yield analysis of distributed-feedback metal-clad ridge-waveguide laserdiodes for coherent system applications

An above-threshold analysis of the distributed-feedback metal-clad ridge-waveguide laser diode is presented. Calculations are based on a theoretical model which takes into account the cross-sectional MCRW structure and the longitudinal spatial hole burning of the carriers in the DFB structure. The results of the model calculations include statistics of output power and laser linewidth as well as the device yield for system application. For an optimised design with AR/HR facet coating available output power levels of 40 mW and linewidths below 10 MHz for more than 80% and 50% of all devices, respectively, have been estimated.< >

GaInAsP twin-stripe lasers with asymmetrical waveguide channels

Design and lasing characteristics of ?=1.3 ?m GaInAsP twin-stripe (TS) metal-clad ridge-waveguide lasers, with a varying degree of index guiding between the channels are reported. The TS devices operate stably in the TE polarised mode, even if under single-stripe injection TM polarisation is observed. Effective longitudinal mode selectivity has been obtained for the TS lasers with an effective index step in the range of 1×10?2 to 5×10?3 between the channels. This mode selectivity can be explained by assuming coupling of lateral modes of the twin waveguide structure via the common gain-medium.

Large Signal Behaviour of Optical Pulse Generation in Q-switched GaAlAs/GaAs Injection Lasers

A large-signal model for passively Q-switched laser structures, consisting of an amplifying and a saturable absorber region, is presented. The amplitude, pulse rate and pulse width of self-sustained pulsations are derived. A comparison with experimental results, obtained from double-contacted metal clad ridge waveguide lasers, is performed.