Membrane DFB Laser Research Articles

Low-bias current 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon.

Low-power consumption directly-modulated lasers are a key device for on-chip optical interconnection. We fabricated a GaInAsP/InP membrane DFB laser that exhibited a low-threshold current of 0.21 mA and single-mode operation with a sub-mode suppression ratio of 47 dB at a bias current of 2 mA. A high modulation efficiency of 11 GHz/mA1/2 was obtained. A 10 Gbit/s direct modulation using a non-return-to-zero 231-1 pseudo-random bit sequence signal was performed with a bias current of 1 mA, which is the lowest bias current ever reported for direct modulation of a DFB laser. A bit-error rate of 10-9 was successfully achieved.

Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Toward the light source for on-chip interconnection, a current-injection-type membrane distributed feedback laser with a surface gating structure is demonstrated. In this device, 450-nm-thick GaInAsP/InP layers with lateral-current-injection structure prepared by a two step OMVPE regrowth-method is bonded on a host substrate by using Benzocyclobutene bonding process. A threshold current of Ith=11 mA is obtained with a cavity length of 300 μm and a stripe of 1 μm.

Continuous wave operation of optically pumped membrane DFB laser

Room-temperature, continuous-wave operation of a 1.55 /spl mu/m wavelength GaInAsP/InP membrane distributed feedback laser consisting of deeply etched single-quantum-well wire-like active regions is demonstrated under optical pumping. A threshold power of 38 mW was obtained for a 10.7 /spl mu/m wide and 40 /spl mu/m long device. A large stop-band width of 65 nm and a low equivalent refractive index of 2.30, which are inherent in a thin membrane waveguide structure, were observed.