Layer Growth Mechanism Research Articles

Experimental study on frost growth patterns and surface wettability effects of precooler module

A thorough understanding of frosting and frost layer growth mechanisms inside the precooler of a hypersonic precooled engine is of crucial importance for controlling the deterioration of heat transfer and pressure loss caused by frosting, and ensuring the normal operation of the engine. In this study, ultra-fine thermocouples were used to measure temperature variations longitudinally during the frosting process of the precooler module. Combined with optical images, an investigation was conducted into the frost layer growth patterns of precooler heat exchange modules and the influence of surface wettability. The research results indicate that there are two different frosting patterns in the precooler: under low Reynolds numbers (≤1500), the pattern is CRT, while under high Reynolds numbers (≥2000), the pattern is ALT. Frosting at Re ≤1500 may cause serious deformation of the precooler tubes. The collapse phenomenon caused by the instability of the frost layer structure reduces the pressure loss coefficient relative to the local maximum by 4 % to 7 %. The higher the incoming Reynolds number, the later the collapse occurs. When Re is too low, collapse will not occur. The surface wetting characteristics reduce the pressure loss coefficient by 13.3 % to 24.2 % in the local range of Reynolds numbers from 1500 to 2800, and cause the pressure loss coefficient curve to rotate clockwise as a whole, enhancing heat transfer to some extent. Last but not least, the normal distribution of surface temperature cooling rates and the functionalization of axial temperature gradients of the tube indicate the possibility of a rapid prediction method for three-dimensional frosting under complex engineering conditions in precooler.

Growth of 1D Carbon Nanotube@Perovskite Core-Shellvan der Waals Heterostructures through Chemical Vapor Deposition.

Perovskite is an emerging material with immense potential in the field of optoelectronics. 1D perovskite nanowires are crucial building blocks for the development of optoelectronic devices. However, producing perovskite nanowires with high quality and controlled alignment is challenging. In this study, the direct epitaxial growth of perovskite on oriented carbon nanotube (CNT) templates is presented through a chemical vapor deposition method. The deposition process of lead iodide and methylammonium iodide is systematically investigated, and a layer plus island growth mechanism is proposed to interpret the experimental observations. The aligned long CNTs serve as 1D templates and allow the growth of CNT@perovskite core-shell heterostructure with a high aspect ratio to withstand large deformation. The obtained 1D perovskite materials can be easily manipulated and transferred, enabling the facile preparation of microscale flexible devices. For proof of concept, a photodetector based on an individual CNT@methylammonium lead iodide heterostructure is fabricated. This work provides a new approach to prepare 1D hetero-nanostructure and may inspire the design of novel flexible nanophotodetectors.

An exhaustive exploration of Zn0.15Sn0.85(Se0.95S0.05)2 crystal-based photodetector and its potential application as a photocatalytic material

The research pioneers the exploration of synthesized quaternary Zn0.15Sn0.85(Se0.95S0.05)2 (ZSSS) crystals, demonstrating remarkable efficacy as optoelectronic switching devices and potent photocatalysts. The ZSSS photodetector recorded a stable photoresponse with remarkable rapid rise and decay times. The Langmuir-Hinshelwood kinetic model was used to look at the photocatalytic activity at different methylene blue concentrations. The researchers grew highly pure ZSSS crystals using the direct vapour transport (DVT) method. Field effect scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) images reveal the layer growth mechanism in the grown crystals. The structural analyses of the grown crystals were carried out using an X-ray diffraction (XRD) pattern and temperature-dependent Raman spectroscopy. The Lorentzian function was fitted to experimental data to carry out the temperature-dependent Raman analysis. The grown crystals exhibit a direct optical bandgap of 1.69 eV. The electrical analyses explain the semiconducting nature of the crystals.

Enhancing thermoelectric behavior of Bismuth Selenide crystal via substitution of Sulfur and Tellurium

Sulfur and Tellurium substituted Bismuth Selenide (Bi2Se3-x-ySxTey, x = y = 0, 0.1, 0.15, 0.2) quaternary alloy crystals were synthesized by using vertical Bridgman technique. Energy dispersive analysis of X-rays confirmed elemental composition and purity of the grown crystals. Field emission scanning electron microscopy showed that the growth of crystals has occurred by layer growth mechanism. Rhombohedral crystal structure is validated through analysis of powder X-ray diffraction pattern. Thermoelectric parameters such as electrical conductivity, Seebeck coefficient and thermal conductivity were calculated from 303 K to 773 K and from that power factor as well as figure of merit have been determined for all grown crystals. Electrical conductivity significantly increased due to Sulfur and Tellurium incorporation and maximum value obtained is 147.72 S/cm at 503 K for Bi2Se2.6S0.2Te0.2. Seebeck coefficient and thermal conductivity showed decrement with incorporation of Sulfur and Tellurium. Reduction in thermal conductivity and enhancement in electrical conductivity resulted in the improvement of figure of merit. Sulfur and Tellurium substitution showed considerable improvement in ZT from 0.31 (533 K) for pristine Bi2Se3 to 1.28 (523 K) for Bi2Se2.6S0.2Te0.2.

Exploring the separation properties of high-Si CHA membranes for the CO2 capturing technology: Impact of the selective layer thickness and growth mechanism

This study investigates the influence of the CHA selective layer's thickness, coated on a mono-channel alumina support using the secondary growth method, on the performance of CO2 separation from CH4. The membrane layer's thickness was explored by adjusting the concentration and duration of the seeding process, as well as the distribution of crystal size in the suspension. Single gas analysis results revealed that utilizing smaller crystal seeds, with an average crystallite size of approximately 600 nm, exhibited the highest performance. Furthermore, a membrane thickness of 2.1 μm demonstrated an ideal CO2/CH4 permselectivity of 205 with a CO2 permeance of 2.39 x 10-6 [mol/(m2sPa)]. For the equimolar CO2 - CH4 gas mixture, the high-Si membrane displayed a CO2/CH4 selectivity of 210 with a CO2 permeance of 8.06 x 10-7 [mol/(m2sPa)]. In both gas permeation measurement, CO2 permeance exhibited a slight linear decrease with increasing thickness, while CH4 permeance initially decreased and then increased non-linearly.

Quaternary In0.15Sn0.85(Se0.95S0.05)2 crystal: Synthesis, characterization, and its multiple applications

The applications of quaternary In0.15Sn0.85(Se0.95S0.05)2 (ITSS) crystals were investigated as a near-infrared (NIR) optoelectronic switching device, vacuum pressure sensor, and photocatalyst. The remarkable photoresponse is demonstrated by the NIR crystal-based ITSS photodetector for various applied external biasing voltage. The NIR photodetector exhibits fast switching with a photoresponsivity of 147 mA/W. The crystals were investigated as a vacuum pressure sensor in the vacuum range ranging from 0 mbar to −1033 mbar as a function of electrical resistance. The n-type grown quaternary crystals have a direct optical bandgap of 1.38 eV. The photocatalytic activity was assessed by varying the concentration of methylene blue (MB) and the characteristics of the photocatalytic process were computed using the Langmuir-Hinshelwood kinetic model. Raman spectroscopy was performed on the grown crystals at temperatures ranging from 98 K to 448 K, with a step of 50 K to study the structural stability. The Lorentzian function was fitted to the experimental data to determine the peak width and peak position. The quaternary ITSS crystals were grown by the mechanical alloying process. The stoichiometry and layered growth mechanism of grown ITSS crystals were confirmed through energy dispersive X-ray spectroscopy (EDS) with mapping and field emission scanning electron microscopy (FESEM), respectively. The hexagonal crystal structure was characterized by the powder X-ray diffraction (PXRD) pattern, and the electrical resistance was studied as a function of temperature.

Surface reorganization of oxide-derived Cu-M (M = Zn, Ag) bimetallic catalysts in CO2 electroreduction environment

As the oxide-derived copper-based electrodes gain continuously more recognition for their great performance in catalyzing CO2 reduction reaction (CO2RR), it is important to define which surface features stand behind their catalytic properties. The presented research explores the surface reorganization of Cu, CuAg10, and CuZn37 passivated materials caused by the reductive environment of CO2RR. It is shown that the presence of Ag constituent has a marginate influence on the mechanism of passive layer growth on copper, whereas Zn changes it in a significant manner. Therefore, the synthesis parameters need to be adjusted differently for both bimetallic systems. The passivation of both Cu and CuAg surfaces provided the best surface area development in the most concentrated electrolyte (3 M NaOH) and CuZn in the least concentrated solution (1 M NaOH). Additionally, after subjecting the selected passivated electrodes to CO2RR conditions, a thorough surface analysis was performed to inspect the influence of Ag and Zn on the characteristic features of the oxide-derived electrodes identified in the modified surfaces. It was found that the more noble Ag component slightly lowers the mixed valance nature of the Cu electrode, however, it provides Ag species that are beneficial for CO2RR selectivity. On the other hand, the CuZn material indicates lower resistance to reduction by suppressed surface area development which leads to a decrease in oxygen vacancies and the amount of oxidized Cu species.

Bridgman grown CuSbS2 single crystal and its application as photodetector and potential thermoelectric material

Crystal of copper antimony disulphide (CuSbS2) measuring 4.5 cm in length and 0.8 cm in diameter was successfully grown using the vertical Bridgman technique (VBT). The orthorhombic unit cell structure and pure CuSbS2 phase of the grown crystal was confirmed by the powder X-ray diffraction and was well supported by Raman spectra. The stoichiometry of the grown crystal was confirmed by energy dispersive X-ray analysis and field emission scanning electron microscopy revealed that crystal is grown by layer growth mechanism. The Raman spectra has shown the presence of peak at 319.32 cm−1 corresponding to Sb-S bonds whereas peaks at 445.03 cm−1 and 257.27 cm−1 corresponds to S-S and Cu-S bonds. The photoluminescence spectra taken at room temperature with 488 nm excitation wavelength displays emission in different regions of the visible spectrum. Optical absorbance spectra shows that CuSbS2 single crystal possess direct bandgap of 1.57 eV which is suitable for solar cell application. The Seebeck coefficient is positive over the entire temperature range, demonstrating the sample's p-type semiconducting nature and corroborates our Hall effect measurements. Using electrical conductivity and lattice thermal conductivity values we calculated thermoelectric figure of merit i.e., ZT whose value comes nearly 0.988 at 503 K which stands in competition with reported values of the other grown crystal. Thermogravimetric (TG) curve has shown two step decomposition at four different heating rates of 5, 10, 15 and 20 K/min which is also confirmed from DTG (differential thermogravimetric analysis) curves. At room temperature, the I-V characteristics of prepared CuSbS2 single crystal photodetector are measured for parallel to plane and perpendicular to plane configuration, with various biasing voltages at 50 mW/cm2. At room temperature, a bias voltage of 0.1 V with a light intensity of 50 mW/cm2 yields responsivity and detectivity of 30 mA/W and 32.84 × 106 Jones for ⊥ to plane, which is comparable to the reported values of other materials.

Early oxidation stages of austenitic stainless steel monitored using Mn as tracer

Understanding the mechanism of oxide layer growth on 316 L requires knowledge, e.g., about the reaction front position, oxide phase formation and diffusion paths of the elements involved. We gain essential information for the early stages of oxidation up to 600 °C, utilizing Mn as tracer in a novel experimental approach. Reasoning is based on monitoring implanted Mn in a Mn-free 316 L before and after oxidation. The reaction front is located inside each oxide grain at ∼400 °C but shifts towards the surface at ∼600 °C. Detection of Cr6+ at 600 °C suggests a so far undocumented role of Cr valence state during oxide growth.

Design and fabrication of the ceramic composites via in-situ oxidized process: Phase and microstructure evolution in in-situ oxidized SiC/Al–Mg–Si process

The ceramic composites were designed through the regulation of the composition and temperature in the in-situ oxidized SiC/Al–Mg–Si composites process. The evolutions of the phase and microstructure were studied by X-ray Diffraction(XRD), Scanning Electron Microscope (SEM), and Transmission Electron Microscope(TEM) in different alloy addition and heating temperature. The products of in-situ oxidized SiC/Al–Mg–Si composites showed similar compositions due to high oxidation resistance on SiC since the heated temperature was below 1500 °C. Alloy addition dislodges the oxide shell on SiC. It promoted the oxidation of SiC, providing the sustained-release Si source to form the cordierite, mullite, and forsterite. Moissanite/spinel, mullite/spinel, and cordierite/spinel were obtained by controlling temperature or adding alloy. The mullite rods formed in 20% alloy addition samples at 1350 °C was detected. The step-like microstructure revealed that grains abide by a layer growth mechanism. The bending strength was enhanced from 13.83 ± 3.6 MPa to 22.32 ± 4.3 MPa by eutectic melting, which increased with the alloy addition and elevated temperature.

Frost formation from general-low to ultra-low temperatures: A review

• Frosting mechanisms from general-low to ultra-low temperatures were investigated. • Frost morphology and properties were identified in terms of frosting factors. • Unique phenomena occurring at ultra-low temperatures were discussed. The frosting at ultra-low temperatures can cause significant degradation of the thermal performance of heat exchangers, which also leads to a decrease in the energy efficiency of air-source heat pumps. In this paper, the temperature terminologies for frosting were classified, and the frosting mechanism and frost properties were investigated from general-low to ultra-low temperatures. The dominant phase change mechanisms at general-low and ultra-low temperatures were condensation-freezing and desublimation, respectively. The frost layer growth mechanism at ultra-low temperatures can be classified into the formation of ice nuclei, growth of ice particles, and deposition of a frost layer in the initial stage of frosting. The frost morphology at ultra-low temperatures showed wisteria or shrub-shaped frost, which was not observed at general-low temperatures. Frost properties are determined depending on frosting factors such as cooling surface temperature, air temperature, absolute humidity, and air velocity, while the thermal conductivity of frost was determined by frost porosity. At ultra-low temperatures, some unusual phenomena were observed that were not observed at general-low temperatures. When the cooling surface temperature was at ultra-low temperatures, the fog was formed near the cooling surface along with the frost, and this fog was dominantly influenced by the frost surface temperature. In addition, unique phenomena such as thread-shaped frost and leading-edge frost concentrations were observed at ultra-low temperatures, and there was a clear difference in the frosting mechanism based on the temperature range.

The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length

The mechanisms of AlGaN device buffer layer growth were studied. Gallium residues in the reactor chamber may be harmful to the quality of the AlN strain modulation layer, which eventually worsens the AlGaN buffer layer. By restraining the gallium residues, the crystalline quality of the AlGaN layer is markedly improved. In addition, enhancing stress relief in nucleation and coalescence stages will reduce the edge dislocations induced by strain relaxation in the 2D growth stage. A slower precursor flow rate can promote the stress relief in nucleation and coalescence stages. By comparison, a suitable suppression of Al atoms’ surface migration can decrease surface roughness, which can be realized by increasing the precursor flow rate. Eventually, we obtained a AlGaN buffer layer having both low edge dislocation density and a flat surface using a two-step growth method.

High-yield synthesis and investigations of bulk and exfoliated crystals of InxBi2-xSe3 (X = 0, 0.5, 1, 1.5, 2) ternary alloys

The synthesis of bulk ternary alloy compound of InxBi2-xSe3 (X = 0, 0.5, 1, 1.5, 2) have been done using Direct Vapor Transport (DVT) technique. High crystalline nanosheets were synthesized by Sonochemical exfoliation technique. The compositional, structural and optical properties of the synthesized InxBi2-xSe3 (X = 0, 0.5, 1, 1.5, 2) ternary alloy were investigated using relevant techniques. Chemical composition was confirmed by EDAX. The structural analysis was done using XRD (X-ray diffraction) and FE-SEM (Field emission scanning electron microscopy). Atomic Force Microscopy (AFM) and HR-TEM (high resolution transmission electron microscopy) shows the few layered liquid phase exfoliated nanosheets having good crystallinity. The crystallinity and layered growth mechanism of the material was observed. The adsorption coefficient was determined at the room temperature in the wavelength range 400nm-650nm.

Thin layer growth on cobalt surface in solutions simulating slurry chemistry for chemical mechanical polishing

Cobalt is gaining strong attention as an alternative metal for very narrow interconnects of advanced LSIs. Cobalt interconnects are fabricated by a damascene process like in copper. Slurries for the chemical mechanical polishing contain both an oxidizer and a corrosion inhibitor, in addition to abrasives. To understand the chemistry of the cobalt surface exposed to slurries, we studied the development of a layer on cobalt surfaces in benzotriazole (BTA)–hydrogen peroxide (H2O2) aqueous solutions using in situ spectroscopic ellipsometry and a microfluidic optical cell specifically designed for this purpose. The layer growth mechanism is discussed in view of cobalt out-diffusion.

Modification of LiMn2O4 surfaces by controlling the Acid–Base surface chemistry of atomic layer deposition

In this combined theoretical and experimental study, we report the effects of Al precursor selection on the growth chemistry, interfacial structure, and electrochemistry of Al2O3 coatings on spinel LiMn2O4 (LMO) surfaces by atomic layer deposition (ALD). Five Al precursors, exhibiting a range of Lewis acid–base properties, were used to establish trends in the ALD Al2O3 growth chemistry on LMO powders in comparison to redox-inactive planar silicon substrates. We show that the Lewis acid–base properties of the Al precursor ligands can be used to tune both the Mn oxidation states and the Al2O3 coverage on the LMO surface. Density functional theory calculations are used to examine the reaction mechanism of each precursor on LMO surfaces, elucidating a correlation between the Lewis acidity of the ligands and the decomposition thermochemistry. In-depth X-ray photoelectron spectroscopy and in situ Fourier transform infrared spectroscopy measurements support these theoretical predictions and further reveal how different Al precursors modify the atomic and electronic structure near the LMO surface during ALD. While the Mn oxidation state is strongly influenced by the Lewis acidity of the precursor ligand, the surface coverage and thickness of the Al2O3 coating are a more representative descriptor of the electrochemical performance measured in coin cell experiments. We show how the ligand acid–base properties of ALD precursors can be used to rationally tailor atomic layer growth mechanisms, which may enable atomic level control over the structure of functionalized interfaces for various applications related to catalysis, semiconductors, and energy storage.

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

The growth condition of initial medium (870 °C–920 °C) temperature (MT) layer is crucial to the quality of high temperature (HT) GaN layer and AlGaN/GaN heterojunction grown on flat sapphire substrate (FSS) with ex-situ sputtered AlN. The superior wetting of GaN and AlN makes the MT layer tend to directly two-dimensional (2D) growth mode at the initial stage. In this study, it was found that high pressure was effective in lowering Ga adatom diffusion and promoting early three-dimensional (3D) growth, which resulted in reducing (102) X-ray full-width-at-half-maximum as well as edge dislocation density significantly. The lowest X-ray rocking curve full-width-at-half-maximum of (002) and (102) were 35 arcsec and 220 arcsec respectively, which were comparable with GaN layer grown on patterned sapphire substrate (PSS). High quality AlGaN/GaN heterojunction was achieved with sheet electron density of 1.18×1013cm−2, Hall mobility of 1909 cm2/V⋅s and sheet resistance of 336 Ω/□. Controlled growth interruption was carried out to study the evolution mechanism of MT layer growth.

Electrochemical and Post-Mortem Degradation Analysis of Parallel-Connected Lithium-Ion Cells with Non-Uniform Temperature Distribution

Prior work on Li-ion cells which were parallel-connected in a stack and subjected to long term cycling showed that non-uniform temperature distribution caused non-uniform and accelerated degradation. To elucidate the degradation mechanisms, electrochemical and post-mortem degradation analysis were performed. Electrochemical impedance spectroscopy analysis suggested that the main degradation mechanism for the middle cell was a solid electrolyte interface (SEI) layer growth. Nevertheless, post-mortem analysis using X-ray diffraction, optical microscope, and scanning electron microscopy paired with energy dispersive X-ray spectroscopy shows the presence of Li2CO3 in both baseline and middle cell anodes. This points towards a combined degradation mechanism of SEI layer growth and lithium plating. A combination of microstructural particle cracking and lithium plating is considered the main mechanism for blocking the anode’s porosity network, which hindered further lithium diffusion, resulting in the abrupt failure for the middle cell. The observation and quantitative analysis provides insight into the performance and reliability impacts of non-uniform conditions within lithium-ion batteries.

A New Modeling Approach to Simulate the SEI Layer Growth in Lithium-Ion Batteries to Predict Capacity Fade

Lithium-ion batteries degrade as they are cycled due to different phenomena that occur inside the cell that lead to the loss of their capacity. One of the dominant mechanisms that leads to capacity fade is the growth of the solid-electrolyte interphase (SEI) layer due to the reduction of the electrolyte solvent on the electrode surface 1. This passive layer ideally prevents the electrolyte from interacting with the electrode, preventing further reduction of the electrolyte. However, the growth of the SEI layer during cycling leads to the irreversible loss of lithium available for cycling and increases the resistance of the battery.Physics-based models to study the growth of the SEI layer for predicting capacity fade are reported in the literature.2 -8 Adding the SEI layer growth mechanism to battery models can help predict the capacity fade of a cell under different charging protocols and drive cycles for EV and PHEV batteries 2. The different models that exist in literature consider the growth to be kinetic-limited 3 , 4 , diffusion-limited 5, or a combination of both 6 , 7 , 8. In previous studies, the relationship between the growth of the SEI layer and the interface resistance is assumed to be linear and the contribution of the same to the overpotential of the intercalation reaction is assumed to be ohmic. This is because the transport of lithium ions through the SEI layer is not included in these models.In this work, we propose a model that describes the growth of the SEI layer on the graphite anode as a moving interface. The mass transport of both lithium ions and the solvent in the electrolyte are modeled which are affected by this moving interface. The transport during kinetic-limited and diffusion-limited growth are analyzed for different C-rates as the battery is cycled. The ion transport also induces changes in the conductivity across the SEI layer which affects the potential that arises due to its growth. This important effect and its influence on capacity fade is studied by simulating battery cycling using the proposed model. These studies help improve the fundamental understanding of the impact of different battery design parameters and operating conditions on capacity loss and cell lifetime. Acknowledgement This work at the University of Texas at Austin was supported by U.S. DOE Office of Electricity award DEAC05-76RL01830 through PNNL subcontract 475525. References P. Arora, R. E. White, and M. Doyle, J. Electrochem. Soc., 145, 3647–3667 (1998).M. T. Lawder, P. W. C. Northrop, and V. R. Subramanian, J. Electrochem. Soc., 161, A2099–A2108 (2014).P. Ramadass, B. Haran, R. White, and B. N. Popov, J. Power Sources, 123, 230–240 (2003).G. Ning and B. N. Popov, J. Electrochem. Soc., 151, 1584–1591 (2004).H. J. Ploehn, P. Ramadass, and R. E. White, J. Electrochem. Soc., 151, 456–462 (2004).M. Safari, M. Morcrette, A. Teyssot, and C. Delacourt, J. Electrochem. Soc., 156, 145–153 (2009).X. G. Yang, Y. Leng, G. Zhang, S. Ge, and C. Y. Wang, J. Power Sources, 360, 28–40 (2017).N. Kamyab, J. W. Weidner, and R. E. White, J. Electrochem. Soc., 166, A334–A341 (2019).

Long term durability studies on the corrosion inhibition effect of 2-mercaptobenzimidazole (C3H4N2S) on AA6022: Mechanism of film formation and influence of IMPs

This study explores stability and variations of a mercaptobenzimidozole-inhibitor-based film upon the surface of Al alloy AA6022 and its contribution to the long-term corrosion inhibition in 0.1 M NaCl. Results provide a deeper insight and understanding of the mechanisms of combined inhibitor film formation and oxide layer growth, up to 240 h exposure, and the effect that the intermetallic particles have on the resultant film stability within these regions. Electrochemical impendence spectroscopy (EIS), potentiodynamic polarization (PDS) and X-ray photoelectron spectroscopy (XPS) studies reveal the formation of a porous, defective oxide layer on the alloy surface under uninhibited conditions. The addition of inhibitors results in the creation of a cathodically controlled system and the formation of a thin inhibitor-oxide mixed film, through the chemical absorption of inhibitor molecules to the substrate via S atom in association with O, thus reducing the corrosion rates. Focus ion beam scanning electron microscopy further confirms the presence of a combined oxide layer and inhibitor film, which covered both the alloy matrix and intermetallic regions. In addition, activity reduction of the Fe rich IMPs is thought to have occurred.

Electroless deposition via galvanic displacement as a simple way for the preparation of silver, gold, and copper SERS-active substrates

Plasmonic substrates can provide efficient enhancement of the local electric field, which is essential for a series of applications, including chemical sensing. Surface-enhanced Raman scattering (SERS) spectroscopy uses specific physical properties of nano-/micro-structured noble metals surfaces to amplify signals of the adsorbed analyte. Commonly used techniques for preparing large-area SERS-active substrates can be time-consuming, expensive, and technically demanding. In this study, we have produced a series of Ag, Au, Cu SERS-active substrates using wet chemical fabrication process and discussed corresponding layer growth mechanisms. The tested approach involves electroless deposition via galvanic displacement. The produced substrates were examined by scanning electron microscopy, energy-dispersive X-Ray spectroscopy, and X-ray diffraction. For SERS analysis of model analyte riboflavin, a 1064 nm excitation wavelength was used. Principal component analysis, calculation of the peak area of selected FT-SERS bands, and estimation of enhancement factors were applied to find optimal deposition time for the prepared substrates. It was confirmed that tested deposition solutions are convenient for producing large-area SERS-active substrates that provide reasonable Raman enhancement for sensing applications using near-infrared excitation. Data statistical processing showed that the intensity of measured FT-SERS spectra is less affected by a deposition time and more affected by the pH and composition of the deposition solution.