Materials For Next-generation Optoelectronic Devices Research Articles

Introducing Ag Dopants into CdSe Nanoplatelets (NPLs) Leads to Effective Charge Separation for Better Photodetector Performance.

Solution-processed colloidal cadmium chalcogenide nanoplatelets (NPLs)-based photodetectors (PD) are promising materials for next-generation optoelectronic devices due to their excellent optical properties. Here, we report on ultrafast carrier relaxation dynamics of four monolayer (4 ML) Ag-doped CdSe (Ag: CdSe) NPLs using ultrafast transient absorption spectroscopy and their photodetectors applications. A broad dopant emission is observed at around 650 nm with a large FWHM of ~431 meV and band edge emission at 515 nm. The intragap dopant state acts as a hole acceptor, which leads to better charge separation. The ultrafast transient absorption spectroscopy study shows faster carrier recombination dynamics with a hole transfer time scale of ~10 ps in Ag-doped CdSe NPLs. This supports the excited hole capture phenomenon at the dopant state. Ag-doped CdSe NPLs-based PD performed better than undoped CdSe NPLs with detectivity and responsivity values of 1.3×1010 Jones and 2.4 mA/W, respectively.

Realizing the effect of s-block metals on a charge transfer crystal of indol-2-one for enhanced NLO responses with efficient energetic offsets.

Due to their unique photophysical properties, organic charge transfer crystals are becoming promising materials for next-generation optoelectronic devices. This research paper explores the impact of s-block metals on a charge transfer crystal of indol-2-one for enhanced nonlinear optical (NLO) responses with efficient energetic offsets. The study reveals that alkali metals can enhance NLO performance due to their free electrons. The Perdew-Burke-Ernzerhof functional of DFT with dispersion correction (D3) was used, and the λmax values ranged between 596 and 669nm, with the highest value for dichloromethane (DCM). Leveraging the unique properties of metals allowed for the development of nonlinear optical materials with improved performance and versatility. Softness (σ) values provide insight into electron density changes, with higher values indicating a greater tendency for changes and lower values indicating the opposite. The NLO results for the chromophores MMI1-MMI6 show varying linear polarizability (< α0 >) along with their first (β0) and second (γ0) hyperpolarizabilities. Chromophore MMI4 stands out with the highest NLO performance, having two potassium (K) atoms. Its < α0 > , β0, and γ0 values of 4.19, 7.09, and 17.43 (× 10-24 e.s.u), respectively, indicate a significant enhancement in NLO response compared to the other chromophores. The transitions involving (O20)LP → (C3-N5)π* and (O19)LP → (N12-C13)π* exhibit the highest level of stabilization, followed by (O23)π → (C10-C11)π*, while (C6-N12)π → (C6-C7)π* shows the lowest level of stabilization for chromophore MMI4. The present research work is facile in its nature, and it can be helpful for synthetic scientist to design the new materials for uniting crystal properties with metal doping for efficient NLO devices.

Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission.

GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requires exploration. In this work, the ultra-thin InN/GaN superlattices (SL) were designed for long-wavelength light emission and investigated by first-principles simulations. The crystallographic and electronic properties of SL were comprehensively studied, especially the strain state of InN well layers in SL. Different strain states of InN layers were applied to modulate the bandgap of the SL, and the designed InN/GaN heterostructure could theoretically achieve photon emission of at least 650 nm. Additionally, we found the SL had different quantum confinement effects on electrons and holes, but an efficient capture of electron-hole pairs could be realized. Meanwhile, external forces were also considered. The orbital compositions of the valence band maximum (VBM) were changed with the increase in tensile stress. The transverse electric (TE) mode was found to play a leading role in light emission in normal working conditions, and it was advantageous for light extraction. The capacity of ultra-thin InN/GaN SL on long-wavelength light emission was theoretically investigated.

Colloidal quantum dot materials for next-generation near-infrared optoelectronics.

Colloidal quantum dots (CQDs) are a promising class of materials for next-generation optoelectronic devices, such as displays, LEDs, lasers, photodetectors, and solar cells. CQDs can be obtained at low cost and in large quantities using wet chemistry. CQDs have also been produced using various materials, such as CdSe, InP, perovskites, PbS, PbSe, and InAs. Some of these CQD materials absorb and emit photons in the visible region, making them excellent candidates for displays and LEDs, while others interact with low-energy photons in the near-infrared (NIR) region and are intensively utilized in NIR lasers, NIR photodetectors, and solar cells. In this review, we have focused on NIR CQD materials and reviewed the development of CQD materials for solar cells, NIR lasers, and NIR photodetectors since the first set of reports on CQD materials in these particular applications.

Recent advances in bioinspired vision sensor arrays based on advanced optoelectronic materials

Animals can learn about the outside world in many ways, and the visual organ is a key organ for acquiring information about the outside world. With the continuous development of intelligent technology, artificial vision techniques are becoming easier and more automated; however, the rigidity, process complexity, and complicated optical components of traditional commercial photodetectors have hindered their development in bionic vision. In recent years, a new generation of optoelectronic materials has attracted extensive research due to their simple preparation process, continuously tunable bandgap, and excellent optoelectronic properties. Two-dimensional optoelectronic materials and perovskites have become the most promising and effective optoelectronic materials for next-generation optoelectronic devices. Based on the excellent properties of next-generation optoelectronic materials, they have also triggered intensive exploration by researchers in the field of visual bionics. This paper highlights a review of the latest research progress of next-generation optoelectronic materials, including their preparation methods, working mechanisms, structural designs, and advances in the field of imaging. The applications of new generation optoelectronic materials in visual bionics by simulating biological visual structures are also described. Finally, the prospects and challenges for the development of next-generation optoelectronic materials in the emerging field of bionic vision are discussed.

Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires

Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for next-generation optoelectronic devices; they can also provide opportunities for further advances in physics. Structuring 2D TMDC sheets as nanoribbons has tremendous potential for electronic state modification. However, a bottom-up synthesis of long TMDC nanoribbons with high monolayer selectivity on a large scale has not yet been reported yet. In this study, we successfully synthesized long WxOy nanowires and grew monolayer WS2 nanoribbons on their surface. The supply of source atoms from a vapor-solid bilayer and chemical reaction at the atomic-scale interface promoted a self-limiting growth process. The developed method exhibited a high monolayer selection yield on a large scale and enabled the growth of long (∼100 μm) WS2 nanoribbons with electronic properties characterized by optical spectroscopy and electrical transport measurements. The produced nanoribbons were isolated from WxOy nanowires by mechanical exfoliation and used as channels for field-effect transistors. The findings of this study can be used in future optoelectronic device applications and advanced physics research.

The electronic structure of β-TeO2 as wide bandgap p-type oxide semiconductor

Wide bandgap oxide semiconductors have gained significant attention in the fields from flat panel displays to solar cells, but their uses have been limited by the lack of high mobility p-type oxide semiconductors. Recently, β-phase TeO2 has been identified as a promising p-type oxide semiconductor with exceptional device performance. In this Letter, we report on the electronic structure of β-TeO2 studied by a combination of high-resolution x-ray spectroscopy and hybrid density functional theory calculations. The bulk bandgap of β-TeO2 is determined to be 3.7 eV. Direct comparisons between experimental and computational results demonstrate that the top of a valence band (VB) of β-TeO2 is composed of the hybridized Te 5s, Te 5p, and O 2p states, whereas a conduction band (CB) is dominated by unoccupied Te 5p states. The hybridization between spatially dispersive Te 5s2 states and O 2p orbitals helps us to alleviate the strong localization in the VB, leading to small hole effective mass and high hole mobility in β-TeO2. The Te 5p states provide stabilizing effect to the hybridized Te 5s-O 2p states, which is enabled by structural distortions of a β-TeO2 lattice. The multiple advantages of large bandgap, high hole mobility, two-dimensional structure, and excellent stability make β-TeO2 a highly competitive material for next-generation opto-electronic devices.

Recent progress in construction methods and applications of perovskite photodetector arrays.

Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.

A facile fabrication of ultrahigh haze optical diffuser using nematic liquid crystal encapsulated by cellulose acetate biopolymer

Polymer dispersed liquid crystals (PDLCs) are materials for next-generation optoelectronic devices. In this work, free-standing optical diffusers based on PDLC are formed by liquid crystals (LCs) and cellulose acetate polymer network. The micron and submicron-sized liquid crystal droplets embedded in the matrix of cellulose acetate biopolymer act as scattering particles, leading to an efficient diffused transmission of the incident laser beam. By optimizing the concentration of LC and polymer, the optical characterizations of the fabricated PDLC films reveal an ultrahigh haze value (99 %) and broad angular distribution of transmitted light with the full width of half maxima up to 114°. The film fabricated with 55 wt % LC results in a light transmitted profile similar to the ideal light diffusing surface with Lambertian distribution. Furthermore, the technique employed to develop the films offers a straightforward and inexpensive fabrication process of light-diffusing films for a high-performance foldable optoelectronic device.

Rapid nanowelding of silver nanowires by focused-light-scanning for high-performance flexible transparent electrodes

Silver nanowires (AgNWs) have been considered as one of the most promising flexible transparent electrodes (FTEs) material for next-generation optoelectronic devices. However, the large contact resistance between AgNWs could deteriorate the conductivity of FTEs. In the present work, high-performance AgNWs FTEs were obtained by means of focused-light-scanning (FLS), which could lead to the large-area, rapid and high-quality welding between AgNWs within a short time, forming the reliable and stable AgNWs network. The results of the optoelectronic tests show that after FLS, the sheet resistance of the AgNWs FTEs sharply decreased from 5113 Ω/sq to 7.7 Ω/sq, with maintaining a high transmittance (∼94%). Finally, a high-performance flexible transparent heater was fabricated by using FLS, showing reach a relatively high temperature in a short response time and rapid response at low input voltage. The findings offer an effective pathway to greatly improve the conductivity of AgNWs FTEs.

Sensitized Molecular Triplet and Triplet Excimer Emission in Two-Dimensional Hybrid Perovskites.

Two-dimensional (2D) organic-inorganic hybrid perovskites are promising materials for next-generation optoelectronic devices owning to their structural and functional versatility and enhanced ambient stability. Recent studies have started to focus on engineering the molecular properties of the organic cations to induce inorganic-to-organic energy/charge transfer for new functionalities, yet many puzzles regarding the inorganic-organic interaction mechanisms remain to be resolved. Here we fabricate 2D lead halide perovskites containing naphthalene methylamine (NMA) cations to study naphthalene triplet sensitization by inorganic excitons. We find that triplet sensitization proceeds via a two-step mechanism initiated by subpicosecond hole transfer from the inorganic layer to naphthalene. We also provide spectroscopic evidence for triplet excimer formation, i.e., the association between triplet and ground state molecules. The intensity ratio between the excimer and triplet emissions can be tuned via the percentage of the NMA cations in the organic layer, offering a route to tunable white-light emitters using 2D hybrid perovskites.

Exploration of Induced Blue Phases and Orthogonal Smectic Batonnets in Hydrogen-Bonded Ferroelectric Nanoliquid Crystalline Complexes for Optoelectronic Devices

A novel blue phase hydrogen-bonded ferroelectric liquid crystal (HBFLC) series has been synthesized from cholesteryl stearate (CHS) and p-n-alkyloxybenzoic acid (nOBA, where n = 2 to12). Blue phase (BP) liquid crystalline complex is a high potent material for next-generation optoelectronic devices. The structural, optical, and thermal properties of present HBFLC complexes have been characterized by X-ray diffraction techniques (XRD), Fourier transform infrared spectroscopy (FT-IR), nuclear magnetic resonance spectroscopy (NMR), polarizing optical microscope (POM), and differential scanning calorimetry (DSC) techniques. The band gap energy of the present HBFLC complex (4.6 eV) is estimated by UV-Visible spectrometer. X-ray diffraction and scanning electron microscope (SEM) studies which confirm the monoclinic nature and morphology of the present complex. Phase diagram of the present CHS + nOBA is constructed from DSC data and the same is discussed. The lower homologous of CHS + nOBA HBFLC (n = 2 to 6) complex shows BPsm1, BPsm2, BPsm3 while higher homologous (n = 7 to 12) exhibiting orthogonal smectic A* (SmA*) character with blue phases. A noteworthy observation is that the identification of extended thermal span of smectic blue phases and induced SmA* phase in the present HBFLCs. Another important observation is that the widest BP range is reported in the present hydrogen-bonded ferroelectric nanoliquid crystalline (HBFNLC) complex which is more suitable for photonic devices. In addition, LC parameters such as, phase width, thermal stability factor, phase transition temperature with enthalpy value, and the origination of orthogonal phases in CHS + nOBA HBFLC complex is also reported.

Observation of High-Frequency Raman Modes in FeCl₃- and Zn-Intercalated MoS₂ Flakes.

In place of the widely studied graphene, monolayer or few-layer MoS2 flakes are promising materials for next-generation optoelectronic devices. MoS2 has attracted increasing attention in physics and its applications because of its capacity to undergo indirect-to-direct band gap transition. Raman spectroscopy is a useful and versatile tool to probe the physical properties of pristine and intercalated MoS2. This study investigates for the first time the multiphoton modes of FeCl3- and Zn-intercalated few-layer MoS2 at high frequencies of 1513 and 1732 cm-1 for FeCl3-MoS2 and 1341 and 1604 cm-1 for Zn-MoS2. The substrates interact with MoS2 during intercalation. The Raman peak intensities of the intercalated samples vary with intercalation time while keeping the peak position nearly constant. This finding is interesting and suitable for studying other 2D layered materials.

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zrn+1CnT2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zrn+1CnT2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/{\AA} electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.

Suppression of supercollision carrier cooling in high mobility graphene on SiC( 0001¯ )

Graphene, a two-dimensional monatomic layer of crystal carbon, has recently emerged as a potential material for next-generation optoelectronic devices owing to unique properties arising from its massless Dirac fermions. However, the intrinsic carrier dynamics of graphene has remained a mystery even for the simple case of carrier cooling after the photoexcitation. This is because the observed temporal variations of the nonequilibrium carriers in graphene have been thoroughly described in terms of a defect-induced extrinsic effect known as ``supercollision'' (SC). The SC process is based on defect-mediated electron-acoustic phonon scattering and theoretically has been predicted to reduce with the increase of mobility of a material. Here, the authors have prepared extremely high mobility graphene and traced the dynamics of photoexcited carriers in the Dirac bands directly by time- and angle-resolved photoemission spectroscopy. They successfully observed suppression of SC and extracted the intrinsic dynamical properties of graphene, such as anharmonic decay of the optical phonons and the bottleneck relaxation at the Dirac point. Breaking the limit of SC, their research also has technological significance in developing graphene-based optoelectronic devices.

Photochemically colour-tuneable white fluorescence illuminants consisting of conjugated polymer nanospheres.

π-Conjugated aromatic polymers have attracted much interest due to their semi-conducting and luminescent properties, and are therefore regarded as promising materials for next-generation optoelectronic devices. Especially, it is considered as one of the indispensable steps for advanced function to control the optoelectronic properties by external stimuli. Herein, we show photochemically fluorescent colour-tuneable systems consisting of photoresponsive conjugated polymer nanospheres. We design and synthesize photoresponsive conjugated polymers with red, green and blue (RGB) fluorescence by introducing photoisomeric dithienylethene moieties in the side chains. A mixture of the red-, green- and blue-fluorescent polymer nanospheres exhibits photoswitchable white fluorescence between emission and quenching by irradiating external lights in both the nanosphere solution and film state. In addition, reversible change in fluorescent colour between white and RGB is also achieved by replacing a photoresponsive polymer with a non-photoresponsive analogue in the mixture. Thus, we successfully demonstrate 'photoresponsive polymer illuminant' systems bearing photochemically colour-tuneable white fluorescence.