Manipulation Of Domain Walls Research Articles

Size-dependent polarization retention in ferroelectric BiFeO3 domain wall memories

Reliable polarization retention in a single crystal-like ferroelectric thin film is crucial for the effective implementation of ferroelectric domain wall (DW) memories. This ensures that the saved information can be non-destructively read out by identifying the resistive state of the memory with a voltage signal below the coercive voltage (Vc) of the ferroelectric film. However, stabilizing a small volume of switched polarization for ultra-high-density information storage applications is still challenging due to its back-switching behavior at zero electric field. In this study, we investigated the polarization retention of ferroelectric BiFeO3 (BFO) thin film devices with size-variable Pt electrodes. With the scaling down of the device size, the switched polarizations became more susceptible to depolarization field and ferroelastic stress arising at the artificially created domain boundary. We found that BFO devices featuring a switched polarization area larger than 7 × 106 nm2 demonstrated both long-term polarization retention and a current rectification ratio of 4.5:1 induced by DW manipulation. As the device size decreases, the retention time of the switched polarization reduces gradually, which results in the disappearance of the device current due to the DW being eliminated by the back-switching of the polarization. A plot was created to illustrate the relationship between the current retention time and the switched polarization area on the surface of the BFO thin films. Furthermore, the unsustainable polarization retention facilitates a higher current rectification ratio of 48:1, which is suitable for non-destructive information readout with a voltage pulse larger than Vc in high-density ferroelectric DW memories.

Ga+ Ion Irradiation-Induced Tuning of Artificial Pinning Sites to Control Domain Wall Motion

Domain-wall-based devices are considered one of the candidates for the next generation of storage memories and nanomagnetic logic devices due to their unique properties, such as nonvolatility, scalability, and low power consumption. Field or current-driven domain walls require a regular and controlled motion along the track in which they are stored in order to maintain the information integrity during operation. However, their dynamics can vary along the track due to film inhomogeneities, roughness of the edges, and thermal fluctuations. Consequently, the final position of the domain walls may be difficult to predict, making difficult the development of memory and logic applications. In this paper, we demonstrate how Ga+ ion irradiation can be used to locally modify the material properties of the Ta/CoFeB/MgO thin film, creating regions in which the domain wall can be trapped, namely motion barriers. The aim is to push the domain wall to overcome thin-film inhomogeneities effects, while stopping its motion at artificially defined positions corresponding to the irradiated regions. Increasing the driving force strength, the domain wall can escape, allowing the shifting between consecutive irradiated regions. In this way, the correct positioning of the domain walls after the motion is ensured. The study shows that the driving force strength, namely current density or magnetic field amplitude, needed to overcome the irradiated regions depends on the ion dose. These results show a reliable approach for domain wall manipulation, enabling a precise control of the domain wall position along a track with synchronous motion.

Controlled domain wall manipulation in rapidly solidified amorphous submicronic wires

Rapidly solidified submicronic amorphous glass-coated wires are unique materials due to their specific combination of reduced diameters, large sample length, and bistable magnetic behavior, of interest for sensing and magnetic logic applications due to their fast-moving magnetic domain walls. Here we report on the interaction of such domain walls moving within amorphous (Co0.94Fe0.06)72.5Si12.5B15 glass-coated submicronic wires with nearly zero magnetostriction. The main part of the complex experimental set-up includes multiple pick-up coils evenly distributed along a sample and two nucleation coils placed at its ends. If there is no signal in the nucleation coils, the magnetization switches starting from one end to the other, with a single moving domain wall being sequentially detected by the pick-up coils. Magnetization reversal can be initiated at both wire ends by means of nucleation fields generated using the corresponding nucleation coils. By adjusting the amplitudes of these fields, one can guide the two associated domain walls to move towards each other and to interact in any desired place along the submicronic amorphous sample. Hence, it is possible to control with accuracy the precise individual domain walls that interact on the wire axis, and with a certain precision, the location in which the two domain walls would interact. The collision of the domain walls gives rise to a double amplitude peak in the pick-up coil that detects it. The results show that the interaction of domain walls in amorphous submicronic wires is completely controllable, which is significant for their future applications.

Deterministic domain wall rotation in a strain mediated FeGaB/PMN-PT asymmetrical ring structure for manipulating trapped magnetic nanoparticles in a fluidic environment.

The manipulation of domain walls (DWs) in strain-mediated magnetoelectric (ME) heterostructures has attracted much attention recently, with potential applications in precise and location-specific manipulation of magnetic nanoparticles (MNPs). However, the manipulation ability in these structures is restricted to magnetostrictive circular ring structures only, where the required onion state is metastable, less thermally stable, and cannot be obtained easily. This work investigates the highly shape anisotropic FeGaB magnetostrictive elliptical ring structures of different aspect ratios and trackwidths on the PMN-PT piezoelectric substrate to manipulate fluid-borne MNPs using active control of DWs. The proposed model utilizes the attribute that the required onion state in a magnetostrictive elliptical ring is thermally stable and easily obtained compared to magnetostrictive circular ring structures. By varying the trackwidth of elliptical rings, nucleated DWs are rotated at different angles to capture and transport fluid-borne MNPs. Up to a critical trackwidth, DW rotation is predicted by dominant stress anisotropy energy that leads the rotation of DWs and attached MNPs toward the dominant tensile strain direction of PMN-PT with reversibility. Increasing the trackwidth beyond the critical trackwidth caused a complete 90° rotation of DWs and attached MNPs without reversibility and is given by dominant shape anisotropy energy. The fundamental relationship of capture probability with the size and velocity of injected MNPs is also demonstrated. The nucleation and rotation of DWs are predicated using the coupled elastodynamic and electrostatic Finite Difference Method (FDM) micromagnetic model. Dynamics of MNP capture and rotation are envisaged using an analytical model.

Magnetic domain structure and domain-wall bound states of the topological semimetal EuB6

Electrically manipulating domain wall (DW) is at central in the field of spintronics. Magnetic Weyl semimetal (WSM) offers an additional knob for electric manipulation of DW by utilizing the topological DW bound states. Using magnetic WSM material EuB6 as a prototype system, we investigate its DW bound states combining first principles calculations and domain imaging via magnetic force microscopy (MFM). The MFM measurements reveal that domains with magnetization aligned along three [100] directions dominate over others under a small magnetic field along [001] direction. Accordingly, first principles calculations are performed based on experimentally determined DW type, which show a robust DW bound state featuring a spectral distribution over a large portion of the DW Brillouin zone. Such DW bound states should result in significant amount of localized charges which can be used to drive DW motion via the electrostatic forces exerted on the localized DW charges.

Field-driven domain wall motion in ferrimagnetic nanowires

The fascinating high-speed field-driven domain wall (DW) motion along ferrimagnetic nanowires near the angular momentum compensation point (AMCP) is solved based on the generic ferrimagnetic dynamics. The physics of the absences of precessional torque and infinite high Walker breakdown field at the AMCP is proved under general conditions. Based on the energy conservation principle, an almost exact DW velocity formula, valid beyond the Walker breakdown field, is obtained. Our results agree with all existing experiments and simulations. This theory provides useful guidances to DW manipulation.

Advances in Magnetic Domain Walls and Their Applications

This article explores the recent developments in spin-based domain wall (DW) memories. The physics behind the DW motion, device materials, current challenges, and applications have been discussed in detail. DWs can propagate through a magnetic nanowire by the application of external magnetic fields or by spin-polarized electric currents. Great progress has been made in these devices since the introduction of electric current-induced DW motion. However, driving DWs necessitates large spin-current densities that are incompatible with low-power devices. Therefore, significant efforts have been made to achieve highly efficient and controlled DW motion by material engineering and different mechanisms such as spin-orbit-torque (SOT), Dzyaloshinskii-Moriya interaction (DMI), and voltage-controlled magnetic anisotropy. The controlled manipulation of DWs in magnetic materials has inspired numerous strategies for high-density memory and energy-efficient logic implementation. Moreover, these devices are the potential candidates for neuromorphic computing applications that can be combined with logic-in-memory. The displacement of the DW can achieve multiple resistance states that have opened up possibilities of building artificial neurons and synapses. Despite the rapid progress, DW devices face several challenges such as low read margin, low speed, and sub-20nm scalability. Future research directions have to focus on material engineering and fabrication techniques to address these issues. Simultaneously, efforts from the circuit and system perspectives are extensively required in exploring the possible uses of these devices.

Simulation and Modeling of Racetrack Memories With VCMA Synchronization

The control of the motion of magnetic domains is of crucial interest for the development of several spintronic applications, such as high-density racetrack memories and domain wall logic. In these devices, domain wall manipulation can be achieved via pulsed currents or applying external fields. However, real-world applications require accurate signal synchronization systems, keeping limited the power budget. Up to now, geometrical restrictions in the magnetic wire, known as notches, were used to confine domain walls at the expense of high resolution of the fabrication process. The solution based on the Voltage-Controlled Magnetic Anisotropy (VCMA) effect appears more promising—it is successful for controlling the skyrmion motion—avoids the need for strong depinning currents, simplifies the fabrication process, and gives more freedom in the control logic. The anisotropy variation induced by the VCMA can create barriers or wells that can be used to limit the movement of domain walls and obtain an effective synchronization. In this article, we propose a system-level evaluation of the effectiveness of the proposed VCMA synchronization method. Starting from a two-coordinates model, the motion of domain walls, the performance, and the efficiency of the approach are evaluated. We modeled the delay using SPICE. The VCMA showed clear advantages in the realization of the confinement structure at the system level with respect to the notch solution.

Observation of a phase transition within the domain walls of ferromagnetic Co3Sn2S2

The ferromagnetic phase of Co3Sn2S2 is widely considered to be a topological Weyl semimetal, with evidence for momentum-space monopoles of Berry curvature from transport and spectroscopic probes. As the bandstructure is highly sensitive to the magnetic order, attention has focused on anomalies in magnetization, susceptibility and transport measurements that are seen well below the Curie temperature, leading to speculation that a “hidden” phase coexists with ferromagnetism. Here we report spatially-resolved measurements by Kerr effect microscopy that identify this phase. We find that the anomalies coincide with a deep minimum in domain wall (DW) mobility, indicating a crossover between two regimes of DW propagation. We demonstrate that this crossover is a manifestation of a 2D phase transition that occurs within the DW, in which the magnetization texture changes from continuous rotation to unidirectional variation. We propose that the existence of this 2D transition deep within the ferromagnetic state of the bulk is a consequence of a giant quality factor for magnetocrystalline anisotropy unique to this compound. This work broadens the horizon of the conventional binary classification of DWs into Bloch and Néel walls, and suggests new strategies for manipulation of domain walls and their role in electron and spin transport.

Field- and Current-Driven Magnetic Domain-Wall Inverter and Diode

We investigate the inversion process of magnetic domain walls (DWs) propagating through synthetic noncollinear magnetic textures, whereby an up/down DW can be transformed into a down/up DW and vice versa. We exploit the lateral coupling between out-of-plane and in-plane magnetic regions induced by the interfacial Dzyaloshinskii-Moriya interaction in Pt/Co/AlOx trilayers to realize both field-driven and current-driven magnetic DW inverters. The inverters consist of narrow in-plane magnetic regions embedded in out-of-plane DW racetracks. Magnetic imaging and micromagnetic simulations provide insight into the DW inversion mechanism, showing that DW inversion proceeds by annihilation of the incoming domain on one side of the in-plane region and nucleation of a reverse domain on the opposite side. By changing the shape of the in-plane magnetic region, we show that the DW inversion efficiency can be tuned by adjusting the ratio between the chiral coupling energy at the inverter boundary and the energy cost of nucleating a reverse domain. Finally, we realize an asymmetric DW inverter that has nonreciprocal inversion properties and demonstrate that such a device can operate as a DW diode. Our results provide input for the versatile manipulation of DWs in magnetic racetracks and the design of efficient DW devices for nonvolatile magnetic logic schemes.

Light-induced irreversible structural phase transition in trilayer graphene

A crystal structure has a profound influence on the physical properties of the corresponding material. By synthesizing crystals with particular symmetries, one can strongly tune their properties, even for the same chemical configuration (compare graphite and diamond, for instance). Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external stimulations. Such abilities, though rare, lead to a number of exciting phenomena, such as phase-change memory effects. In the case of trilayer graphene, there are two common stacking configurations (ABA and ABC) that have distinct electronic band structures and exhibit very different behaviors. Domain walls exist in the trilayer graphene with both stacking orders, showing fascinating new physics such as the quantum valley Hall effect. Extensive efforts have been dedicated to the phase engineering of trilayer graphene. However, the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable challenge. Here, we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation, creating domains of different shapes in trilayer graphene. The ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene, offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.

Current-driven magnetic domain-wall logic.

Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal-oxide-semiconductor logic1-13. Architectures based on magnetic domain walls take advantage of the fast motion, high density, non-volatility and flexible design of domain walls to process and store information1,3,14-16. Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large-scale chips. Here we demonstrate a method for performing all-electric logic operations and cascading using domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction17-20, which promotes non-collinear spin alignment, to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.

Magnetic Imaging of Domain Walls in the Antiferromagnetic Topological Insulator MnBi2Te4.

The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi2Te4 family, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependence. The direct visualization of these domain walls and domain structures in the magnetic field will not only facilitate the exploration of intrinsic topological phenomena in antiferromagnetic topological insulators but will also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.

Formation and manipulation of domain walls with 2 nm domain periodicity in BaTiO3 without contact electrodes.

Interfaces at the two-dimensional limit in oxide materials exhibit a wide span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can be moved deterministically with external voltage, while they remain at place after voltage removal, paving the way to novel neuromorphic and low-power data-processing technologies. Ferroic domains arise to release strain, which depends on material thickness, following Kittel's scaling law. Hence, a major hurdle is to reduce the device footprint for a given thickness, i.e., to form and move high-density domain walls. Here, we used transmission electron microscopy to produce domain walls with periodicity as high as 2 nm without the use of contact electrodes, while observing their formation and dynamics in situ in BaTiO3. Large-area coverage of the engineered domain walls was demonstrated. The domain-wall density was found to increase with increasing effective stress, until arriving at a saturation value that reflects 150-fold effective stress enhancement. Exceeding this value resulted in strain release by domain rotation. In addition to revealing this multiscale strain-releasing mechanism, we offer a device design that allows controllable switching of domain-walls with 2 nm periodicity, reflecting a potential 144 Tb per inch2 neuromorphic network.

Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films.

Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.

Adiabatic and nonadiabatic spin torques induced by a spin-triplet supercurrent

We study spin transfer torques induced by a spin-triplet supercurrent in a magnet with the superconducting proximity effect. By a perturbative approach, we show that spin-triplet correlations realize new types of torques, which are analogous to the adiabatic and non-adiabatic ($\beta$) torques, without extrinsic spin-flip scattering. Remarkable advantages compared to conventional spin-transfer torques are highlighted in domain wall manipulation. Oscillatory motions of a domain wall do not occur for a small Gilbert damping, and the threshold current density to drive its motion becomes zero in the absence of extrinsic pinning potentials due to the nonadiabatic torque controlled by the triplet correlations.

Manipulating antiferromagnets with magnetic fields: Ratchet motion of multiple domain walls induced by asymmetric field pulses

Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here, we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic field, which leads to higher mobility of the domain walls. Second, the rate of change of the magnetic field couples with the spatial variation of the AF order parameter inside the domain, and this enables a synchronous motion of multiple domain walls with the same structure. Third, tailored asymmetric field pulses in combination with static friction can prevent backward motion of domain walls and thus lead to the desired controlled ratchet effect. The proposed use of an external field, rather than internal spin-orbit torques, avoids any restrictions on size, conductivity, and crystal structure of the AF material. We believe that our approach paves a way for the development of AF-based devices based on the controlled motion of AF domain walls.

Controlled manipulation of domain walls in ultra-thin CoFeB nanodevices

We report on studies of magnetic domain wall (DW) movement within nanodevices containing magnetic components formed from perpendicularly magnetised CoFeB (0.6nm) thin films. Methods for low energy and smooth DW propagation as well as controlled and reproducible pinning of DWs at geometrically defined sites along nanowires are presented. Conventional anomalous Hall effect measurements as well as an indirect method using overlying electrodes are presented and compared. The results obtained from the individual studies of DW injection, propagation, pinning and measurement are assimilated into a prototype device suitable for the controlled pinning and annihilation of a single domain wall within the structure.

Controlling domain wall motion in ferroelectric thin films.

Domain walls in ferroic materials have attracted significant interest in recent years, in particular because of the unique properties that can be found in their vicinity. However, to fully harness their potential as nanoscale functional entities, it is essential to achieve reliable and precise control of their nucleation, location, number and velocity. Here, using piezoresponse force microscopy, we show the control and manipulation of domain walls in ferroelectric thin films of Pb(Zr,Ti)O₃ with Pt top electrodes. This high-level control presents an excellent opportunity to demonstrate the versatility and flexibility of ferroelectric domain walls. Their position can be controlled by the tuning of voltage pulses, and multiple domain walls can be nucleated and handled in a reproducible fashion. The system is accurately described by analogy to the classical Stefan problem, which has been used previously to describe many diverse systems and is here applied to electric circuits. This study is a step towards the realization of domain wall nanoelectronics utilizing ferroelectric thin films.

Pure spin current-induced domain wall motion probed by localized spin signal detection

We demonstrate the displacement of domain walls via pure diffusive spin currents in a nonlocal spin valve geometry, without any externally applied fields. We implement a localized detection of the domain wall position by simultaneous nonlocal spin signal measurements using contacts on both sides of the spin current conduit, which allows us to determine the domain wall position even underneath the spin current conduit. Using this detection method, we probe the domain wall position as it moves across the spin current conduit when sweeping a field or on current application. Injecting pure spin currents in the nonlocal architecture, we find that in our optimized geometry we can displace a transverse head-to-head or tail-to-tail domain wall without any externally applied fields at effective spin currents $<$${10}^{10}$ A/m${}^{2}$, showing that this method can be a viable avenue to low-power domain wall manipulation.