Magnetoelectric Voltage Coefficient Research Articles

Room-temperature giant magnetotranstance effect in Y-type hexaferrite Ba0.8Sr1.2Co2Fe11.1−xAl0.9CrxO22 (x ≤ 0.4)

We have investigated the magnetoelectric effect of a series of Y-type hexaferrite Ba0.8Sr1.2Co2Fe11.1−xAl0.9CrxO22 (x ≤ 0.4) at room temperature. Although the magnetoelectric voltage coefficient αE of these multiferroic hexaferrites is not high, it changes rapidly with an applied DC magnetic field, a phenomenon known as the giant magnetotranstance (GMT) effect. It is found that the GMT effect is enhanced with increasing content of Cr and reaches the maximum for x = 0.2. Specifically, the magnetotranstance ratio in the x = 0.2 sample is as high as −96% at 2000 Oe and −84% at 500 Oe. Further addition of Cr content causes a decay of the GMT effect. This kind of room-temperature GMT effect in Y-type hexaferrites opens up a route toward practical applications for the single-phase multiferroics.

Evidence of self-biased magnetoelectric coupling in eco-friendly (Na0.41K0.09Bi0.5TiO3-Ba0.85Ca0.15Zr0.1Ti0.9O3)-(CoFe2O4) particulate composites

The magnetoelectric (ME) properties of eco-friendly 1-x(0.94Na0.41K0.09Bi0.5TiO3-0.06Ba0.85Ca0.15Zr0.1Ti0.9O3)-x (CoFe2O4) (NKBCZT-CFO) with x = 0, 0.1, 0.2, 0.3 and 0.4 particulate composites were investigated. The X-ray diffraction studies provided evidence for the simultaneous existence of constituent phases (ferroelectric and ferromagnetic) in the composite. The structural and surface morphology analysis of the composite affirmed the homogeneous and densely packed distribution of CFO grains within the NKBCZT matrix. The composite's multiferroic behavior at room temperature was confirmed through the characterization of P vs E and M vs H hysteresis loops. The observed values of remnant polarization (Pr) and coercive field (Ec) are 26.7 μC/cm2 and 35.5 kV/cm, respectively, for 10 mol% of CFO. The increase in CFO content resulted in a decrease in the ferroelectric properties, possibly due to the conductive behaviour exhibited by CFO, and correlated with leakage current measurement. For the composite containing 40 mol% of CFO, the estimated values of remanent (Mr), saturation (Ms) magnetization, coercive field (Hc), and magnetic moment (µB) are 2.35 emu/g, 21.85 emu/g, 104.2 Oe, and 0.86 µB, respectively. The non-Debye type dielectric relaxation processes have been observed in the composites, and the electron hopping mechanism resulted in a higher dielectric constant (εʹ). Enhancement in relaxor nature had been observed through Vogel-Fulcher analysis with CFO content. The evidence of ME coupling was revealed through the direct ME voltage coefficient (αME) and magnetocapacitance (MC) measurement. The observed maximum value of MC measured at 1 kHz for the 20 mol% CFO is ∼5.6 %. Self-biased ME coupling (non-zero αME at HDC = 0 Oe) was observed in 20 and 30 mol% of CFO composite. The highest measured value of αME for 20 and 30 mol% CFO is 3.63 mV/cm.Oe and 4.09 mV/cm.Oe at HDC = 0 Oe respectively. The strong ME interaction and significant value of self-biased ME αME suggest that these composites can be explored for magnetic sensor and ME memory device applications.

Leveraging the strain transfer at the interface between self-composite CoFe2O4 embedded in pre-sintered Na0.5Bi0.5TiO3 ceramics matrix for the enhancement of magnetoelectric voltage coefficient

Magnetoelectric particulate composite (100-x) NBT- xCFO(sc) (x = 5,15,25,35) were prepared from pre-sintered NBT and self-composite CFO(sc) by solid-state reaction route. XRD, SEM, and Raman studies confirm the biphasic composite formation without diffusion at the interfaces. Unsaturated ferroelectric loops and enhanced ferromagnetic properties are evidenced. ME coefficient value is enhanced to 25.1 mV cm−1 Oe in the N65SC35 composite which is the greatest among the reported values in the literature of NBT-CFO composites. The enhancement is due to the effective strain transfer at the interfaces of the composites. This is explained by a simple dimensionless quantity, degree of interface. This quantity is defined using the interface length of ferroelectric-ferromagnetic phases and the weighted average grain size which corroborates the enhancement of the ME coefficient.

Enhanced piezoelectricity of P(VDF-TrFE) by BN nanosheets doping and leading to high performance laminated magnetoelectric composites

With the development trend of miniaturization, lightweight and portability of electronic equipment, piezoelectric devices have been widely applied to transducers, sensors and energy harvesters. Piezoelectric polymers, like poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), possess the advantages of light weight, good flexibility, and simple preparation methods. However, P(VDF-TrFE) films is not entirely composed of piezoelectric phase (β phase), so increasing the content of β-phase is very important for the piezoelectric property of P(VDF-TrFE) films. Doping nanomaterials with unique properties has been proved to be a feasible way to increase the content of β-phase. In this paper, hexagonal boron nitride (h-BN) nanosheets, a kind of 2-dimensional van der Waals materials with wide bandgap, as filler were doping into poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) piezoelectric films by solution casting method. The composite films as designed, in which h-BN nanosheets were uniformly dispersed in P(VDF-TrFE), achieved higher contents of piezoelectric phase (β phase). Compared with pure P(VDF-TrFE) films, the optimal P(VDF-TrFE)/BN piezoelectric film achieved a much higher piezoelectric coefficient (d33) (∼42 pC/N), also leading to a higher piezoelectric voltage output than that of pure P(VDF-TrFE). By laminating the P(VDF-TrFE)/BN films as designed with FeSiB Metglas, high magnetoelectric voltage coefficients under zero and low DC magnetic bias were achieved. In summary, this paper presents a feasible and potential method for improving PVDF piezoelectricity, which has been successfully applied in high performance magnetoelectric devices.

A Wide-Band Magnetoelectric Sensor Based on a Negative-Feedback Compensated Readout Circuit.

Magnetoelectric (ME) sensors cannot effectively detect broadband magnetic field signals due to their narrow bandwidth, and existing readout circuits are unable to vary the bandwidth of the sensors. To expand the bandwidth, this paper introduces a negative-feedback readout circuit, fabricated by introducing a negative-feedback compensation circuit based on the direct readout circuit of the ME sensor. The negative-feedback compensation circuit contains a current amplifier, a feedback resistor, and a feedback coil. For this purpose, a Metglas/PVDF/Metglas ME sensor was prepared. Experimental measurements show that there is a six-fold difference between the maximum and minimum values of the ME voltage coefficients in the 6-39 kHz frequency band for the ME sensor without the negative-feedback compensation circuit when the sensor operates at the optimal bias magnetic field. However, the ME voltage coefficient in this band remains stable, at 900 V/T, after the charge amplification of the direct-reading circuit and the negative-feedback circuit. In addition, experimental results show that this negative-feedback readout circuit does not increase the equivalent magnetic noise of the sensor, with a noise level of 240 pT/√Hz in the frequency band lower than 25 kHz, 63 pT/√Hz around the resonance frequency of 30 kHz, and 620 pT/√Hz at 39 kHz. This paper proposes a negative-feedback readout circuit based on the direct readout circuit, which greatly increases the bandwidth of ME sensors and promotes the widespread application of ME sensors in the fields of broadband weak magnetic signal detection and DBS electrode positioning.

Microstructural and physical characterizations of (1-x)(0.67BiFeO3+ 0.33BaTiO3+ 1%MnO2)− x(CoFe2O4+ 3%ZnO) magnetoelectric composites

BiFeO3 (BFO) was mixed with BaTiO3 (BTO) to form a solid solution of large piezoelectric coefficient (d33) for the fabrication of magnetoelectric (ME) composites with the Zn-doped CoFeO4 (CFO). The 0.67BFO+0.33BTO solid solution, which was doped with 1 at% MnO2 for lowering leakage current, showed a high d33 of 121 pC/N. However, in the composites made with CFO, a much lower d33 (<42 pC/N) was retained. The microstructure of the composites was featured by the large CFO grains (∼5 μm) embedded in the 0.67BFO+0.33BTO matrix of much finer grains (∼0.5 μm). The CFO grains each had a well-defined morphology with clear boundary discriminating them from the neighboring piezoelectric phase. Both the CFO and piezoelectric grains showed a high crystallinity as indicated by the appearance of clear Kikuchi patterns in electron backscattered diffraction. After reducing DC conductivity of CFO by Zn-doping and the optimization of fractional ratio of the Zn-doped CFO in the composites, a ME voltage coefficient of 81.8 mV/cm-Oe was achieved, which was high among the lead-free particulate ME composites prepared by the conventional solid-state sintering.

A flexible magnetic detector based on transferred ferroelectric/ferromagnetic thin film heterostructure

A flexible magnetic detector based on ferroelectric/ferromagnetic (PZT/Metglas) thin film heterostructure is developed by using etching and transferring technique. The transferred PZT film still exhibits (001)-oriented or very highly textured structure with good ferroelectricity (P r = 50 μC cm−2 and E c = 150 kV cm−1). Magnetoelectric (ME) voltage coefficient of the PZT/Metglas film heterostructure approaches 5.1 V cm−1 Oe at resonance frequency (57.5 kHz). The flexible detector has a sensitivity of AC 0.3 nT and DC 1 Oe with high stability for magnetic field detection. Our demonstration provides a viable approach for realizing ME thin film transfer technology, which is of great significance for future applications on flexible magnetic detectors.

Investigation of the magnetoelectric properties of Bi0.9La0.1Fe0.9Mn0.1O3/La0.8Sr0.2MnO3 bilayer: Monte Carlo simulation

In the present work, the magnetic, ferroelectric and magnetoelectric properties of the bilayer composite Bi0.9La0.1Fe0.9Mn0.1O3/La0.8Sr0.2MnO3 (BFO-LM/LSMO) have been studied using Monte Carlo simulation in the framework of the Heisenberg model. The magnetoelectric properties of BFO-LM/LSMO bilayer films with different stacking modes were predicted and analyzed. Furthermore, the effect of interfacial coupling on the magnetoelectric properties was analyzed, and a maximum magnetoelectric voltage coefficient of 195.5 mV/(cm.Oe) was obtained in the BFO-LM/LSMO bilayer films with BL/Mn-interface. The magnetic coupling at the FM/Mn interface provides a novel ferromagnetic state localized at the interface and an improvement in the magnetic properties. The obtained results make BFO-LM/LSMO films a promising material for advanced magnetoelectric applications.

Multifunctional Magnetoelectric Sensing and Bending Actuator Response of Polymer-Based Hybrid Materials with Magnetic Ionic Liquids.

With the evolution of the digital society, the demand for miniaturized multifunctional devices has been increasing, particularly for sensors and actuators. These technological translators allow successful interaction between the physical and digital worlds. In particular, the development of smart materials with magnetoelectric (ME) properties, capable of wirelessly generating electrical signals in response to external magnetic fields, represents a suitable approach for the development of magnetic field sensors and actuators due to their ME coupling, flexibility, robustness and easy fabrication, compatible with additive manufacturing technologies. This work demonstrates the suitability of magnetoelectric (ME) responsive materials based on the magnetic ionic liquid (MIL) 1-butyl-3-methylimidazolium tetrachloroferrate ([Bmim][FeCl4]) and the polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE) for magnetic sensing and actuation device development. The developed sensor works in the AC magnetic field and has frequency-dependent sensitivity. The materials show voltage responses in the mV range, suitable for the development of magnetic field sensors with a highest sensitivity (s) of 76 mV·Oe-1. The high ME response (maximum ME voltage coefficient of 15 V·cm-1·Oe-1) and magnetic bending actuation (2.1 mm) capability are explained by the magnetoionic (MI) interaction and the morphology of the composites.

Magneto-electric effects in coaxial nanofibers of hexagonal ferrites and ferroelectrics

We report on magneto-electric (ME) effects in core-shell nanofibers of hexagonal ferrites and ferroelectrics synthesized by electrospinning. The core-shell structure in annealed fibers of M, Y, and W-type hexagonal ferrites and PZT was confirmed by electron and scanning microwave microscopy. Fibers showed ferroelectric polarization and magnetization smaller than for bulk samples. The ME coupling strength was measured by magnetic field H induced polarization and ME voltage coefficient (MEVC). In SrM-PZT fibers the remnant polarization decreased by as much as 20% with the application of H. The highest MEVC was measured for magnetic field assembled films of SrM–PZT fibers.

Significant magnetoelectric enhancement of composite films of CoZnxFe2-xO4 particles and poly (vinylidene fluoride-trifluoroethylene) for AC magnetic sensors

Polymer-based magnetoelectric (ME) nanocomposites exhibit a low ME effect and high bias field at room temperature, which severely limits their application in flexible wearable sensors. To overcome these obstacles, Zn-doped magnetic nanoparticles of CoZnxFe2-xO4 (x = 0, 0.1, 0.2, and 0.3) were prepared by an auto-combustion method in this work. The obtained magnetostrictive curves imply that Zn element doping can improve greatly the piezomagnetic coefficient of magnetic nanoparticles, and among the tested materials, CoZn0.1Fe1.9O4 has the largest piezomagnetic coefficient. Composite films of poly(vinylidene fluoride-trifluoroethylene) and CoZn0.1Fe1.9O4 (P(VDF-TrFE)/CoZn0.1Fe1.9O4) were prepared by spin coating. The maximum ME voltage coefficient of P(VDF-TrFE)/CoZn0.1Fe1.9O4 composite film with a filler weight concentration of 10 wt% is 87.9 mV cm−1 Oe−1 with a bias field of 1050 Oe and a resonance frequency of 46 kHz, which is the highest value reported in the literature of 0–3 type polymer-based ME composite films at present. To evaluate the composite films for application in magnetic sensors, the ME output voltage was measured at a bias field of 1050 Oe with increasing AC magnetic field, demonstrating a good linear relationship with linearity of 0.999. These results indicate that the piezomagnetic coefficient of magnetic materials is an the important factor for the great enhancement of the ME voltage coefficient. This work provides a new approach for the synthesis of more effective polymer-based ME nanocomposites for potential applications in smart wearables.

Grain size and piezoelectric effect on magnetoelectric coupling in BFO/PZT perovskite-perovskite composites

Magnetoelectric multiferroics are provoking much research activity for their potential applications in novel multifunctional devices. Compared with single-phase multiferroics, magnetoelectric composites have competitive advantages. The magnetoelectric coupling of composites is heavily influenced by composition and grain size. We prepared BFO/PZT composites with separate phases via the solid-state sintering method. We show that equal molar ratio composition has a better magnetoelectric coupling response than other compositions. The composites with nano bismuth ferrite have better magnetoelectric coupling performance, and these with both nano grain sizes present the highest magnetoelectric voltage coefficients (αE = 16.9 mV cm−1 Oe−1). The strain-mediated mechanism was confirmed via a comparison between strain response and polarization of nano/micro type composites with the composition of 3:7. We found that the magnetoelectric voltage coefficient αE positively correlates with strain response instead of polarization in BFO/PZT composites, which provides experimental evidence for the strain-mediated ME composite theory.

Enhanced Polarization Effect of Flexible Magnetoelectric PVDF-TrFE/Fe3O4 Smart Nanocomposites for Nonvolatile Memory Application

High power consumption of nonvolatile memory is a major challenge, as it reduces the memory efficiency of information storage devices. The magnetoelectric (ME) coupling in multiferroic nanocomposites, which can be utilized in magnetoelectric random access memory, is an effective approach to reduce power consumption in information storage. Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients for piezoelectric thin films. Specifically, the ME voltage coefficient of the P(VDF-TrFE)/Fe3O4 composite developed in this study is 8.97 mV/(cm·Oe), which is 17.5% higher compared to that of the pure P(VDF-TrFE) at a Hdc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites is characterized by the increase of diffraction peak intensity at a microscopic level. The nanocomposite films exhibit high ME voltage coefficients and information storage performance, providing a great potential for creating next-generation memory devices in the realm of artificial intelligence and wearable devices.

Development of Lead Free Magnetoelectric Materials for Magnetic Field Sensor applications

(100-x) Na0.5Bi0.5TiO3 (NBT)-(x) NiFe2O4 (NFO)(x = 0, 20, 40, 60, 80 and 100) composites are synthesized using conventional solid state reaction method. Crystal structure studies are performed by using X-ray Diffraction technique (XRD) and the Rietveld analysis of XRD patterns confirms the co-existence of cubic (NFO) and rhombohedral (NBT) symmetry with Fd- 3m and R3c space groups, respectively. Micro-structural study reveals the formation of combination of composite phases and its inter-coupling grains. The average grain sizes and area percentage of each phase for the composites are calculated using Image J software. The Magnetisation versus Magnetic field (M-H) hysteresis loops show soft magnetic behavior of composites with variation in Saturation magnetization (MS) and Coercivity (HC). A maximum MS (34 emu/g) and low HC (15 Oe) is obtained for (80) NFO - (20) NBT composite.The Polarization – Electric field (P-E) analysis shows that the maximum saturation polarization (PS) is obtained for (60)NBT-(40)NFO sample and is attributed to the leakage current generated by conductive NFO phase. The coupling between the ferrite and ferroelectric phase is studied based on the magnetoelectric voltage coefficient(αME). The maximum (αME) of 1.82 mV/cm-Oe is obtained for (80)NBT -(20)NFO sample and this is almost 80% higher than the previously published literature on NBT-NFO composites. This can be attributed to the uniform distribution of grains with each ferroelectric phase surrounded by ferrite phase as shown in the morphological study.

Transition-Layer Implantation for Improving Magnetoelectric Response in Co-fired Laminated Composite

Magnetoelectric (ME) laminated composites with strong ME coupling are becoming increasingly prevalent in the electron device field. In this paper, an enhancement of the ME coupling effect via transition-layer implantation for co-fired lead-free laminated composite (80Bi0.5Na0.5TiO3-20Bi0.5K0.5TiO3)/(Ni0.8Zn0.2)Fe2O4 (BNKT/NZFO) was demonstrated. A transition layer composed of particulate ME composite 0.5BNKT-0.5NZFO was introduced between the BNKT piezoelectric layer and the NZFO magnetostrictive layer, effectively connecting the two-phase interface and strengthening interface stress transfer. In particular, an optimal ME voltage coefficients (αME) of 144 mV/(cm·Oe) at 1 kHz and 1.05 V/(cm·Oe) at the resonant frequency in the composite was achieved, with a layer thickness ratio (BNKT:0.5BNKT-0.5NZFO:NZFO) of 3:1:6. The static elastic model was used to determine strong interface coupling. A large magnetodielectric (MD) response of 3.95% was found under a magnetic field excitation of 4 kOe. These results demonstrate that transition-layer implantation provides a new path to enhance the ME response in co-fired laminated composite, which can play an important role in developing magnetic field-tuned electronic devices.

Investigations of room temperature multiferroic and magneto-electric properties of (1-Φ) PZTFT-Φ CZFMO particulate composites

Multiferroic composites consisting of a single-phase multiferroic [0.6(PbZr0.53Ti0.47O3)-0.4(PbFe0.5Ta0.5)O3] as a matrix and a magnetostrictive phase (Co0.6Zn0.4Fe1.7Mn0.3O4) dispersed in the matrix are fabricated via hybrid synthesis technique. The structure and surface morphology studies using x-ray diffraction and field emission scanning electron microscopy techniques indicate the formation of 3-0 type particulate composites. Coexistence of soft-magnetic behavior and ferroelectric characteristics are confirmed for composites from magnetization vs magnetic field (M–H) and polarization vs electric field (P–E) measurements, respectively. Magneto-dielectric (MD) measurement shows significant changes in the dielectric properties with the application of a magnetic field, indicating the existence of strong MD behavior. The biquadratic nature of magneto-electric (ME) coupling is described by the Landau free energy equation arising from the strain transfer at the interfaces between the constituent phases. The direct magneto-electric voltage coefficient measurement also confirms very strong coupling between ferroelectricity and magnetism and supports the strain-mediated magneto-electric effect in composites. The Φ = 0.3 composite exhibits the maximum ME coefficient of 20.72 mV/cm Oe with MS = 24.62 emu/g, HC = 59.66 Oe, and piezoelectric coefficient value d33 = 19 pC/N. The strong magneto-electric effect along with low dielectric loss at room temperature in these composites suggests their suitability for multifunctional magneto-electric device applications such as magnetic sensors, etc.

Enhanced non-bias-field magnetoelectric response with high detectivity in a sensing system based on electret film and magnetostrictive material

An electret film and a magnetostrictive rod were used to combine a magnetoelectric sensing system. The dynamic magnetoelectric measurement was used to investigate the voltage output of the combined system. A significant non-bias-field magnetoelectric response was observed. The capacitance and magnetoelectric voltage coefficient were significantly affected by the AC and DC magnetic field. The ME voltage coefficient exhibited a step decrease with an increase in the DC field. The maximum tunability of the magnetoelectric voltage coefficient was 99.8%. The limit of detection of the AC magnetic field decreased rapidly with a very high value at lower frequencies and decreased slowly with a very low value at higher frequencies. The minimum value of the limit of detection was approximately 0.016 Oe. These findings indicated the combination for potential applications in magnetic detectors, magnetoelectric sensors, switches, and energy converters.

Piezoelectric and Magnetoelectric Effects of Flexible Magnetoelectric Heterostructure PVDF-TrFE/FeCoSiB.

Flexible polymer-based magnetoelectric (ME) materials have broad application prospects and are considered as a new research field. In this article, FeCoSiB thin films were deposited on poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) substrate by DC magnetron sputtering. The structure of PVDF-TrFE/FeCoSiB heterostructure thin films was similar to 2-2. Under a bias magnetic field of 70 Oe, the composites have a dramatically increased ME voltage coefficient as high as 111 V/cm⋅Oe at a frequency of about 85 kHz. The piezoelectric coefficient of PVDF-TrFE thin films is 34.87 pC/N. The surface morphology of PVDF-TrFE thin films were studied by FESEM, and the results of XRD and FTIR showed that the β-phase of PVDF-TrFE thin films was dominant. Meanwhile, the effects of different heating conditions on the crystallization and piezoelectric properties of PVDF-TrFE films were also studied. The flexible ME heterojunction composite has a significant ME voltage coefficient and excellent piezoelectric properties at room temperature, which allows it to be a candidate material for developing flexible magnetoelectric devices.

Magneto-ionic enhancement and control of perpendicular magnetic anisotropy

Magneto-ionic control of magnetic anisotropy is an emerging voltage-controlled approach that aims to offer much lower power consumption than current-controlled manipulation of magnetization. Moreover, magneto-ionic systems are ideal candidates for non von Neumann computing architectures, such as neuromorphic and stochastic computing due to their non-volatile and analog nature. One of the key metrics to quantify the efficiency of voltage-controlled magnetic anisotropy (VCMA) is the magneto-electric voltage coefficient (ΔHc/|ΔV|). Here, we show greater than one order of magnitude improvement in this efficiency compared to existing solid-state systems using a Co/Pd multilayer heterostructure. By performing a systematic study of the Co thickness, the Pd thickness, and the number of repeat units of engineered Co/Pd multilayers, we identify a narrow bandwidth of the Co thickness from 2–2.5 Å, Pd thickness from 1.4–1.7 nm, and repeat units from 7–9, to maximize the VCMA. Compared to rivaled liquid electrolyte systems, this platform has the advantage of faster speeds and easier integration for on-chip logic and memory devices.

A Shear-Mode Magnetoelectric Heterostructure with Enhanced Magnetoelectric Response for Stray Power-Frequency Magnetic Field Energy Harvesting.

This paper devises a magnetoelectric (ME) heterostructure to harvest ambient stray power-frequency (50 Hz or 60 Hz) magnetic field energy. The device explores the shear piezoelectric effect of the PZT-5A plates and the magnetostrictive activity of the Terfenol-D plates. The utilization of the high-permeability films helps to enhance the magnetoelectric response to the applied alternating magnetic field. A theoretical model is developed based on the piezomagnetic and piezoelectric constitutive equations as well as the boundary conditions. The ME response of the device is characterized theoretically and experimentally. The measured ME voltage coefficient attains 165.2 mV/Oe at the frequency of 50 Hz, which shows a good agreement with the theoretical result. The feasibility for extracting energy from the 50 Hz magnetic field is validated. Under an external alternating magnetic field of 30 Oe, a maximum power of 8.69 μW is generated across an optimal load resistance of 693 kΩ. Improvements of the ME heterostructure are practicable, which allows an enhancement of the ME voltage coefficient and the maximum power by optimizing the structural parameters and utilizing PMN-PT with a higher shear-mode piezoelectric voltage coefficient (g15).