In this study, pure Indium oxide (In2O3 100%) and its composite films Indium gallium oxide (IGO 50%:50%), and Indium gallium zinc oxide (IGZO 33%:33%:34%) are deposited on glass substrate by Sol-gel dip coating method. Indium oxide and its composites have a high degree of crystallization, as evident by the strong diffraction peaks. The SEM images depict distinctly diverse morphologies of nanostructures varied in size from 22.2nm to 138nm. The wider band gap (Eg) engineering (reported (Eg≈ 3.62eV)–In2O3, (Eg ≈ 3.83eV)–IGO, (Eg≈3.74eV) –IGZO) and heterostructure formation is also advantageous for novel In2O3 applications in advanced (transparent) devices and sensors. Complex impedance analysis provides insights into the grains and grain boundaries of In2O3 and its composite films (IGO, IGZO). The VSM measurements confirms that IGZO has a higher saturation magnetization value of 13.33emu/cm3 and a lower coercivity value of 429.54Oe as compared to In2O3 and IGO highlighting their magnetic properties suitable for spintronic and high-frequency device applications.
Read full abstract