Magnesium Tin Oxide Research Articles

Investigation of low-cost magnesium stannate transparent conductive oxide layer: optical, structural and electrical properties and photovoltaic applications

In this research investigation we reveal the development of Magnesium Tin Oxide (MTO) as Transparent Conductive Oxide (TCO) material. It is the best replacement for the existing TCO materials. In the present work, Tin (II) Chloride and Magnesium Acetate are (MA: SC) taken in different ratios (0.1M: 0.1 M- S1C, 0.1M: 0.2M- S2C, 0.1M: 0.3M-S3C, 0.1M: 0.4M-S4C, 0.1M: 0.5M-S5C) and the prepared solution is coated at the deposition temperature of 400° C by NSP technique. The deposited thin films are then annealed at a very high temperature of 500°C for three hours. A structural study explains that the prepared films exhibiting a strong diffraction peak, corresponding to the plane (105) magnesium tin oxide of rhombohedral structure. It is noted that the value of thickness is varied from 210nm to 480 nm when the molar concentration of Tin (II) chloride increases from 0.1M to 0.5M. The maximum transmittance obtained is more than 80% with a wider band gap of 3.89eV. FE-SEM shows improved crystallinity, development of grain size and the attainment of uniformity in grain distribution after annealing. From EDAX analysis, it is noted that when the concentration of Tin (II) Chloride as well as annealing temperature increases, the presence of unwanted elements is reduced and hence the purity is improved. FTIR result shows the presence of functional groups present in the prepared MTO thin films. From the studies of Hall Effect measurements, the value of the resistivity is measured and it is in the order of 10−3(Ω cm). Photo-anodes and counter electrodes of DSSC are prepared with MTO as TCO substrate, and the cell efficiency is measured. The discussions explain that DSSC constructed with platinum coated on MTO (S5C) as counter electrode and TiO2 coated on MTO (S5C) as photo anode shows a better power conversion efficiency of 3.28% than the rest of the other cells.

Change in ionization potential of magnesium tin oxide films before and after photochromism

Magnesium-tin oxide (MTO) became a cell storage material after strong UV irradiation, and the appearance of the photochromic phenomenon was the sign of initiation of such a function. This phenomenon is not an independent behavior occurring in magnesium-tin oxide films, but we found that the phenomenon occurred in the interface between the MTO layer and indium tin oxide layer prepared under the MTO layer. To clarify this phenomenon, analysis of the MTO layer is the key issue and investigation under the environmental condition is required. The photochromic color change does not reproduce by excess heating treatment. In this paper, we focused on the change in the ionization potential of the MTO film before/after the reversible color change and irreversible erase, and to achieve this experiment, we constructed a novel photoelectron yield spectrometer and measured the ionization potential of a magnesium tin oxide film.

Effect of Mg content on characteristics of amorphous ZnMgSnO thin-film transistors by a combustion solution process

Amorphous zinc–magnesium–tin oxide (a-ZMTO), a new kind of amorphous oxide semiconductors (AOSs), was prepared for fabricating thin-film transistors (TFTs) by a combustion solution process. The prepared ZnMgSnO films have a high amorphous quality with smooth surface, evenly distributed elements, as well as high visible transmittance above 80% with a width of band gap of around 3.12 eV. The effects of Mg content on properties of films and performance of devices were investigated in detail. An appropriate Mg content could efficiently suppress the oxygen vacancy (VO) concentration and make the surface smoother, thereby enhancing the properties of films and performance of related a-ZMTO TFTs. The a-ZMTO TFTs exhibited acceptable performances, with field-effect mobility (μFE) of 0.083 cm2 V−1 S−1, on/off current ratio (Ion/Ioff) of around 3.0 × 104, and threshold voltage (Vth) of 1.42 V. The a-ZMTO films and ZMTO TFTs may offer an option of indium-free AOS materials for future application in transparent electronics.

Quantum chemical approach to photochromic particles

Currently, demand for secondary batteries is increasing from the perspective of IoT, electrification, and effective use of surplus electricity. The principle of storage in photochromic particles has not been clearly understood, and this material, which is said to have high energy density, has not yet been realized. Takaki et al. suggested that photochromism was not the phenomenon exhibited in the magnesium tin oxide (MTO) film, but at the interface between the MTO film and the ITO film in the lower layer, which is prepared as a transparent electrode. This is considered to be the key issue to the clarification of the phenomenon.

Understanding the mechanism of photochromism in double-layer metal oxide using X-ray photoelectron spectroscopy

We investigated the photochromism in a double-layer metal oxide by using X-ray photoelectron spectroscopy and scanning electron microscopy to identify the UV-induced reversible photochromism. We observed the metal oxide was reduced to a partially formed crystalline metal, and this was the cause of the photochromism. It was also found that this reduction induced by UV irradiation cracked the upper layer of magnesium-tin oxide and ultimately caused the reduced metal to oxidize slightly by being exposed to the atmosphere. This reversible transformation of a chemical species, on UV exposure, and discoloration induced by heating was considered to be a redox reaction.

Annealing Effect of Magnesium Tin Oxide Thin Films Prepared by Nebulizer Spray Pyrolysis Technique for DSSC applications

In the present work, Magnesium Tin Oxide (MTO), transparent conducting oxide thin films (TCO) are prepared by Nebulizer Spray Pyrolysis Technique and the properties are compared with the available ITO substrate. Magnesium acetate (MA), Tin (II) chloride (TC) are taken in three different ratios (0.1:0.1M, 0.1:0.2M, 0.1:0.3M) and the thin films are prepared onto the glass substrate at 400°C. The prepared films were annealed at 400°C for three hours. The structural analysis show the presence of Magnesium Tin Oxide with maximum intensity showing the crystallinity of the prepare samples. Also, the peak corresponds to magnesium oxide and Tin oxides were also observed with less intensity. The crystallite size was found to be around 5 nm and the thickness of the film is found to be 0.23, 0.27 and 0.32 µm for the films prepared at MA: TC in the ration of 0.1:0.1M, 0.1:0.2M and 0.1:0.3M. The sign of bulk carrier concentration shows that the coated film is having n-type conductivity and the resistivity value is very low in the range of 7 x 10 −3Ω cm which is very close to the resistivity value of ITO (8 x10−4Ω cm). The Percentage of Transmittance is between 75 to 85% in the visible region and the band gap value is 3.8 eV. From the results, it is concluded that MTO is a Best alternative for ITO and can be used in Dye-Sensitized Solar Cell (DSSC).

Photochromic behavior at the interface of two transparent thin films and the possibility for its use in a high-performance battery

A transparent magnesium tin oxide thin film was prepared on a 330-nm-thick indium tin oxide (ITO)-coated glass substrate. UV irradiation led to darkening of the film. The colored film could be reversibly decolorized by an appropriate thermal treatment. As this coloration–decoloration phenomenon did not occur without the ITO layer and the magnesium tin oxide layer was too thin to absorb the incident light sufficiently, the coloring process is thought to occur in the ITO layer. Ab initio calculations indicated that the darkening of the ITO layer was the result of oxidation caused by the magnesium tin oxide layer.

フォトクロミックナノ粒子の電圧電流特性の検討

Several years ago, it was reported that the magnesium tin oxide nano particles exhibited cell characteristics. This interesting phenomenon was induced by UV irradiation and showed photochromic behavior. Recently we synthesized zinc silicon nanoparticles, which also showed photochromism like previously mentioned nano particles. In this study, we focused on structure of zinc silicon nano particles and proposed its photochromic principles. Furthermore, we examined zinc silicon particles also exhibited cell characteristics or not.

Structural and Surface Morphological Studies of Magnesium Tin Oxide Thin Films

Transparent conducting oxides (TCOs) have been well known in the form of undoped single cation oxides such as SnO2 and In2O3. These are degenerate semiconductors which are simultaneously transparent and highly conductive, useful in many optical and electrical device developments. Starting from 1990s, however, multication TCOs began to develop. Since then new TCOs are being reported with increasing frequency as their technological interest and importance increased in various fields of technological development. In this paper, we have attempted to use magnesium tin oxide as new TCO which possess more than 80% of transmittance for a 320nm film. The precursor of magnesium tin alloy was prepared through a new way called “protective flux route” method. Magnesium tin oxide thin films were prepared by electron beam evaporation technique. The coated film was then annealed to get oxide layer and hence magnesium tin oxide thin films. Their structural analysis, optical studies, electrical properties and surface morphology were studied using XRD, UV-Vis-NIR, linear four probe resistivity and SEM, respectively.

A New Red Emitting Phosphor Mg<sub>2</sub>SnO<sub>4</sub>: Eu

Mg2SnO4 was adopted as the host material of a new red emitting phosphor. Lumin-escence properties of the europium-doped magnesium tin oxide prepared by the low temperature solid state reaction were investigated under 395nm excitation. Under 395 nm excitation, the Mg2SnO4: Eu phosphor exhibits novel red emission at about 613 nm which is assigned to the 5D0 → 7F2 electric – dipole transition. Furthermore, the emission transition 5D0 → 7F2 has been found to be more prominent over the normal orange emission transition 5D0 → 7F1.

Influence of Die-Chill Skin on the Formation of Stannate Conversion Coating on AZ91D Magnesium Alloy

The microstructure of die-chill skin on a die-cast AZ91D plate has been characterized, and its effect on the formation and corrosion resistance of stannate conversion coating has been investigated. The die-chill skin contained interconnected pores, around which carbon–silicon-containing magnesium/aluminum oxides were detected. The stannate conversion coating on the die-cast AZ91D consisted of hemispherical magnesium tin oxide particles. When compared with the substrate whose die-chill skin had been removed by mechanical polishing, the presence of die-chill skin enhanced the nucleation of magnesium tin oxide particles and reduced the thickness of the conversion coating layer. The intact sites on the substrate with die-chill skin, however, led to the formation of uncoated spots after 10 min of stannate conversion coating treatment. The thinner conversion coating containing uncoated spots was less effective in retarding the reduction of water during cathodic polarization in a mixture of 0.1 M sodium sulfate and 0.05 M sodium chloride solution. These uncoated spots, which were resistant in the alkaline stannate solution, seemed to prohibit the oxidation and dissolution of the substrate during anodic polarization.

High luminance of new green emitting phosphor, Mg 2SnO 4:Mn

Mg 2SnO 4, which has an inverse spinel structure, was adopted as the host material of a new green emitting phosphor. Luminescence properties of the manganese-doped magnesium tin oxide prepared by the solid state reaction were investigated under vacuum ultraviolet (VUV) ray and low-voltage electron excitation. The Mg 2SnO 4:Mn phosphor exhibited green luminescence with the emission spectrum centered at 500 nm due to spin flip transition of the d-orbital electron associated with the Mn 2+ ion. Optimum Mn concentration of Mg 2SnO 4:Mn under VUV excitation with 147 nm wavelength and electron beam excitation with 800 V excitation voltage are 0.25 and 0.6 mol%, respectively. The emission intensities of Mg 2SnO 4:Mn phosphors under the two excitation sources are higher than those of Zn 2SiO 4:Mn and ZnGa 2O 4:Mn phosphors. At 0.25 mol% of Mn concentration, on the other hand, the decay time is shorter than 10 ms.

Cathodoluminescence properties of novel Mg2SnO4: Mn phosphor under low‐voltage electron excitation

The manganese‐doped magnesium tin oxide with spinel structure was selected as a green phosphor for FED application and was synthesized by the solid state reaction. Its luminescence properties were investigated under low‐voltage electron excitation. The Mg2SnO4:Mn phosphor showed green emission with the spectrum centered at 500 nm due to energy transfer from 4T1 to 6A1 of Mn2+ ion. Optimum Mn concentration was 0.6 mole % and the decay time was shorter than 10 ms.