Luminescence Properties Of Quantum Dots Research Articles

Photoluminescence of dense arrays of InGaPAs/InGaAs quantum dots formed by substitution of group V elements

One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms with arsenic ones in a thin InGaP epilayer. Based on transmission electron microscopy data, the surface density was estimated to be about 1.3 × 1012 cm−2, which is one of the highest values for quantum dots on GaAs. The influence of an additional InGaAs epilayer (quantum well) on the luminescence properties of quantum dots was investigated in a wide temperature range and different optical pumping levels. It was found that placing the quantum well under the layer of quantum dots has little effect on the central emission wavelength, while quantum dots covered with the InGaAs demonstrate a strong red shift of the luminescence spectrum. A transition from a nonequilibrium to an equilibrium distribution of charge carriers over quantum-dot states, related to the lateral transport of charge carriers over quantum dot array, similar to that previously observed in In(Ga)As Stranski-Krastanow quantum dots, was revealed. This is manifested in a change in temperature dependencies of the linewidth and peak position of the photoluminescence band. For the structures under study, this transition occurs at a temperature of about 125 K. Rapid thermal annealing of the structures allows to increase the integrated photoluminescence intensity of quantum dots up to 4 times, while the maximum of the spectrum remains almost unchanged, provided that the annealing temperature does not exceed 620 °C.

Progressive quenching of luminescence from quantum dot thin films in proximity with ZnMgO in unencapsulated stacks

ZnMgO nanoparticles (NPs) are being increasingly used as the electron transport layer (ETL) in state-of-the-art quantum-dot light-emitting devices (QLEDs) instead of ZnO. However, the impact of ZnMgO on the luminescence properties of quantum dots (QDs) is much less understood. Here, we compare ZnMgO and ZnO NPs for their quenching effect on Cd-based QDs photoluminescence (PL), immediately and over time. Time-resolved photoluminescence (TRPL) and steady-state PL results show that ZnMgO NPs decreases the QDs’ luminescence more than ZnO NPs and that the behavior continues progressively over time. The surface topography of the samples containing different ETLs is studied using atomic force microscopy (AFM) and optical PL images. Additionally, time of flight secondary ion mass spectroscopy (TOF-SIMS) measurements are conducted to investigate the potential diffusion of some species from ETL into the QDs layer. The results confirm that morphological changes and out-diffusion of some species from the ZnMgO layer can likely play a role in the QDs PL quenching. This study sheds light on the limitations of ZnMgO for the long-term stability of QLEDs, specifically for blue QLEDs where using ZnMgO is essential for efficient electron injection.

Surface regulation by bifunctional BODIPY to fabricate stable CsPbBr3 for multi-layered optical anti-counterfeiting

Cesium lead halide perovskite quantum dots (QDs) have attracted immense attention for luminescent materials due to their narrow emission bands and color-tunable emission. However, indispensable surface ligands originating from ligand-assisted synthesis strategies severely deteriorate the stability and luminescence properties of QDs since these ligands have a highly dynamic binding. Herein, we used a green fluorescence BODIPY molecule containing thiol (named SH-BDP) to regulate the CsPbBr3 QDs surface by ligand regulation. Density functional theory calculations proved that the SH-BDP molecule could bind to the exposed Pb of CsPbBr3 QDs stronger than traditional ligands to form stable SH-BDP-QDs. Moreover, the SH-BDP fixed on the CsPbBr3 QDs surface can improve water and light resistance. It also served as a knob to tune their luminescence properties and the reversible thermal-stimuli response. Finally, the multi-response property of SH-BDP-QDs was realized under polar solvent or heat along with UV light. In addition, we used the SH-BDP-QDs to create various anti-counterfeiting labels; several luminous modes were achieved under different external stimuli, which improved the quality of the optical anti-counterfeiting labels and ensured information security. This work indicates the immense potential of surface ligand manipulation in improving the stability and multi-stimuli-responsive optical encoding of perovskite quantum dots.

Quantum dot scaffold phosphors: Maximizing luminescence quantum yield via different stock environments

This paper presents a novel concept for quantum-dots (QDs) phosphor plates using a polymer scaffold matrix. Here, graphene quantum-dots (GQDs) has utilized as the luminescent material in a polymeric scaffold prepared by free-radical polymerization followed by freeze-drying. The highly porous scaffold (porosity: ~60%, pore size in broad micron size) maintained the individual identity of the quantum dots for the beauty of high luminescence quantum yield, which is necessary for fabricating efficient phosphors. These outcomes were strongly reinforced by time-resolved photoluminescence. This study offers a systematic approach for tuning the luminescence property of quantum dots in different states such as powders, liquids, hydrogels, and freeze-dried scaffolds.

The Power of Heterogeneity: Parameter Relationships from Distributions.

Complex scientific data is becoming the norm, many disciplines are growing immensely data-rich, and higher-dimensional measurements are performed to resolve complex relationships between parameters. Inherently multi-dimensional measurements can directly provide information on both the distributions of individual parameters and the relationships between them, such as in nuclear magnetic resonance and optical spectroscopy. However, when data originates from different measurements and comes in different forms, resolving parameter relationships is a matter of data analysis rather than experiment. We present a method for resolving relationships between parameters that are distributed individually and also correlated. In two case studies, we model the relationships between diameter and luminescence properties of quantum dots and the relationship between molecular weight and diffusion coefficient for polymers. Although it is expected that resolving complicated correlated relationships require inherently multi-dimensional measurements, our method constitutes a useful contribution to the modelling of quantitative relationships between correlated parameters and measurements. We emphasise the general applicability of the method in fields where heterogeneity and complex distributions of parameters are obstacles to scientific insight.

Exploring the CdTe Quantum Dots in Ionic Liquids by Employing a Luminescent Hybrid of the Two

Poor solubility of the semiconductor quantum dots (QDs) severely restricts studies on these substances in room temperature ionic liquids (ILs). It also limits applications, which require both these promising classes of materials. In this work, a simple method employing a task-specific thiol-capped imidazolium ionic liquid (SH-UMIM) is developed that allows study of luminescent CdTe QDs of different sizes in a large number of ILs. Luminescence studies based on ensemble and single-particle blinking measurements have been performed to investigate the role of the capping agent and the media (ILs) on the stability and luminescence properties of the QDs in these media. The results suggest that improved luminescence properties of the CdTe QDs in ILs is due to the capping agent, SH-UMIM, and the enhanced stability of the QDs toward molecular oxygen is provided by the ILs because of low solubility of oxygen in these viscous media.

Synthesis, biocompatibility and luminescence properties of quantum dots conjugated with amino acid-functionalized β-cyclodextrin

A series of CdSe and CdSe/CdS quantum dots (QDs) labeled with amino acid-modified β-cyclodextrin (β-CD) was prepared by a simple ultrasonic method. These amino acid-modified β-CD-coated QDs are very soluble and stable in biological buffer. They also have high colloidal stability and strong optical emission properties that are similar to those of untreated tri-n-octylphosphine oxide (TOPO)-coated QDs. The quantum yields (QYs) of these amino acid-modified β-CD-coated CdSe and CdSe/CdS QDs in biological buffer were found to be very high. In particular, the QYs of the positively charged l-His-β-CD-coated CdSe/CdS QDs were as high as 33.5±1.8%. In addition, the fluorescence lifetime of these QDs was also very long in PBS solutions as determined by frequency domain spectroscopy. For example, the lifetime of l-His-β-CD-coated CdSe/CdS QDs was 8.6 ns. The in vitro cytotoxicity of these QDs in ECV-304, SH-SY5Y and HeLa cells was found to be lower. l-His-β-CD-coated CdSe/CdS QDs were the least cytotoxic (IC 50 95.6±3.2 mg mL −1 in ECV-304 cells after 48 h). The flow cytometry results show that the positively charged amino acid led to a considerable increase in biocompatibility of QDs. This may be attributed to the presence of an amino acid-modified β-CD outer layer, which enhanced the biocompatibility.

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Polarization-resolved edge-emitting electroluminescence (EL) studies of InGaN/GaN MQWs of wavelengths from near-UV (390 nm) to blue (468 nm) light-emitting diodes (LEDs) are performed. Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs, an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths. The polarization degree decreases from 52.4% to 26.9% when light wavelength increases. Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs, and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect. Therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.

Study of Fluorescence Quenching and Dialysis Process of CdTe Quantum Dots, Using Ensemble Techniques and Fluorescence Correlation Spectroscopy

Luminescence properties of quantum dots (QDs) are closely related to their surface structure and chemical properties. In this work some ensemble techniques and fluorescence correlation spectroscopy (FCS) were used to study the fluorescence quenching and dialysis process of CdTe QDs. It is found that when some heavy metal ions, such as silver ions (Ag+), quench QDs, the free Ag+ ions bind with bare Te atoms and form the AgTe structure on the surface. The FCS experimental results show that the quenching process is not the gradual reduction of fluorescence intensity of single QDs, but the decrease in the number of bright QDs with the addition of Ag+ ions. In other words, the bright QDs turn into dark directly in the quenching process. It is observed that some dark QDs converse into the bright QDs in the dialysis experiments and the dialysis process can improve the brightness per QDs. Furthermore, the results of FCS and fluorescence spectroscopy illustrate that the increase of the fluorescence quantum yield (QY) is mainly attributed to the removal of excess unreacted Cd-MPA complex and the possible chemical change of the QDs surface in the dialysis process. These new results can help us to further understand the complex surface structure of water-soluble QDs, improve their surface chemical features, and expand their applications in some fields.

Surface‐modification effects on luminescence properties of CdS and CdMnS quantum dots prepared by a reverse‐micelle method

We have investigated surface modification effects on luminescence properties of CdS and CdMnS quantum dots (QDs) prepared by a reverse-micelle method. Before the surface modification, a broad luminescence band that originates from defects is dominant in CdS QDs. By the modification, the intensity of the band-edge luminescence is remarkably increased. The intensity of Mn2+ luminescence is also increased by the surface modification of CdMnS QDs. These results clearly indicate that the surface modification considerably improves the luminescence properties of QDs.