Chemical Deposition Research Articles

Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy

Hexagonal boron nitride (h-BN) stands out among 2D materials for its insulating properties, making it promising for the integration of 2D and 3D materials. However, achieving wafer-scale growth on silicon substrates remains a significant challenge. In this study, growth strategies for depositing h-BN on Si substrates are explored utilizing the wafer scalable metalorganic chemical vapor deposition. Our investigations reveal that employing a pulsed flow mode scheme is preferable over the conventional continuous flow mode scheme in growing h-BN thin films on 150 mm Si substrates. The as-grown h-BN film on Si exhibits uniform coverage with h-BN[0001]//Si[111]. With the successful wafer-scale growth of h-BN on Si, its role in aiding the van der Waals epitaxy of III-nitrides on Si substrates and subsequent epitaxial lift-off (ELO) of III-nitrides is further exemplified. An optimized h-BN thickness for the ELO process is also determined.

Construction and Multifunctional Photonic Applications of Light Absorption-Enhanced Silicon-Based Schottky Coupled Structures.

To expand the detection capabilities of silicon (Si)-based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si-based graphene photodetector. This work introduces a novel Si-based Schottky coupled structure by in situ growth of 3D-grapheneand molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual-enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D-graphene's natural nano-resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built-in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380-2200nm. It stably outputs photocurrent under high-frequency (1 kHz) modulated laser (2200nm), with a responsivity (R) of 40mAW-1 and detectivity (D*) of 1.15×109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240×200 pixels).

Rapid Scalable One‐step Production of Catalysts for Low‐Iridium Content Proton Exchange Membrane Water Electrolyzers

AbstractProton exchange membrane water electrolysis (PEMWE) is a promising technology for green hydrogen production, although its widespread development with state‐of‐the‐art loadings is threatened by the scarcity of iridium (Ir). Homogeneous dispersion of Ir in an immiscible electro‐ceramic matrix can enhance catalytic mass activity and structural stability. The study presents IrySn0.9(1−y)Sb0.1(1−y)Ox solid solutions produced by highly scalable flame spray pyrolysis (FSP) process as efficient anode electrocatalysts for PEMWE, containing only 0.2 mg cm−2 of Ir in the catalyst layer (CL). Intense mixing of metal vapor and large thermal gradients in the precursor‐derived high‐temperature flame aids stabilizing sub‐nanoscale entropic mixing within self‐preserved 4–6 nm particles. Detailed investigations confirm that the one‐step prepared solid solution electrocatalysts exhibit up to fourfold higher activity toward the oxygen evolution reaction (OER) compared to Ir black. The anode of a PEMWE utilizing this catalyst exhibits high performance and stability over 2000 h but with tenfold lower Ir loading than the state‐of‐art.

Fabrication of 0.6 eV Bandgap In0.69Ga0.31As Thermophotovoltaic Cells and Its System Demonstration

Thermophotovoltaic (TPV) is a promising energy conversion technology that can absorb the heat from a thermal radiator and transfer it into power. As the most significant energy converter, TPV cells need a narrower bandgap to realize a wider absorption spectrum range. In this work, the fabrication and characterization of single‐junction In0.69Ga0.31As TPV cells with a bandgap of 0.6 eV are presented. The main structure is grown on an InP substrate through metal‐organic chemical vapor deposition. Step‐graded InAsyP1−y buffer layers are used to mitigate the dislocations by relaxing the stress induced by lattice mismatch completely. Analysis of the composition, strain relaxation, layer tilt, and crystalline quality of each layer is demonstrated using triple‐axis X‐ray reciprocal space mapping and transmission electron microscopy. According to the tested results, each layer is found to be nearly fully relaxed and the InGaAs active layer grown on the buffer displays a high crystal quality. External quantum efficiency achieves 90% at 1100–1500 nm. Additionally, a TPV test platform is constructed to evaluate the cell performance. The maximum efficiency of the lattice‐mismatched TPV cell reaches 21.92% operating at a power density of 267.4 mW cm−2 and an emitter temperature of 1200 °C.

Two-Step Chemical Vapor Deposition for Fabrication of FAPbI3 Single-Crystal Microsheets with High Exciton Binding Energy.

Hybrid perovskites exhibit highly efficient optoelectronic properties and find widespread applications in areas such as solar cells, light-emitting diodes, photodetectors, and lasers. Here, we report the innovative synthesis of formamidinium lead iodide (FAPbI3) single-crystal microsheets via a two-step chemical vapor deposition (CVD) method. The microsheets exhibit hexagonal and trapezoidal shapes, with hexagonal FAPbI3 growing parallel to the substrate and trapezoidal FAPbI3 growing perpendicular to the substrate. The dominant role of single-exciton recombination in the photoluminescence (PL) of these microsheets is observed, especially pronounced at low temperatures, attributed to the relatively large exciton binding energies of the samples. Calculations reveal exciton binding energies as high as 110.8 meV for hexagonal and 133.3 meV for trapezoidal FAPbI3 single-crystal microsheets, attributed to reduced rotational freedom of the formamidinium (FA) ions. Further investigation into low-temperature phase transitions indicates lower transition temperatures (around 100 K) for these microsheets, suggesting reduced FA ion rotational freedom and consequently higher exciton binding energies.

Passively generated Q-switched pulses fiber laser in 2 μm wavelength using MXene Ti3C2Tx and Ti2CTx saturable absorber

Abstract In this paper, Q-switched Thulium-doped fiber lasers (TDFLs) operating near the 2 µm region were demonstrated, utilizing a newly developed Thulium doped fiber as the gain medium and titanium carbide MXene as the saturable absorber (SA). The Thulium-doped fiber with a composition of SiO2-GeO2-Al2O3-HfO2-Y2O3-Bi2O3, was produced from a preform prepared using the modified chemical vapor deposition (MCVD) process. Two variations of titanium carbide MXene-based SA, Ti3C2Tx and Ti2CTx, were tested and compared, both successfully generating Q-switched pulses. When Ti3C2Tx was used, the Q-switched pulse had a center wavelength of 1934.223 nm, a repetition rate of 55.39 kHz and a pulse width and 1.942 µs. For Ti2CTx, the generated Q-switched pulse has a center wavelength of 1932.229 nm, with a repetition rate of 77.28 kHz and a pulse width of 1.608 µs. The signal-to-noise ratio (SNR) values were 45.6 dB and 50.2 dB for Ti3C2Tx and Ti2CTx respectively. Based on the experimental results, both Ti3C2Tx and Ti2CTx show promise as SAs for generating Q-switched pulses in the 2 µm region within the TDFL cavity.

Stabilizing Metal Halide Perovskite Films via Chemical Vapor Deposition and Cryogenic Electron Beam Patterning.

Halide perovskites are hailed as semiconductors of the 21st century. Chemical vapor deposition (CVD), a solvent-free method, allows versatility in the growth of thin films of 3- and 2D organic-inorganic halide perovskites. Using CVD grown methylammonium lead iodide (MAPbI3) films as a prototype, the impact of electron beam dosage under cryogenic conditions is evaluated. With 5 kV accelerating voltage, the dosage is varied between 50 and 50000 µC cm-2. An optimum dosage of 35 000 µC cm-2 results in a significant blue shift and enhancement of the photoluminescence peak. Concomitantly, a strong increase in the photocurrent is observed. A similar electron beam treatment on chlorine incorporated MAPbI3, where chlorine is known to passivate defects, shows a blue shift in the photoluminescence without improving the photocurrent properties. Low electron beam dosage under cryogenic conditions is found to damage CVD grown 2D phenylethlyammoinum lead iodide films. Monte Carlo simulations reveal differences in electron beam interaction with 3- and 2D halide perovskite films.

Realizing 0.7 dB/m gain in O + E band by promoting BACs-P formation in bismuth-doped phosphosilicate fiber with double-pass configuration.

The long fiber length required for the amplification of bismuth-doped fiber (BDF) has hindered its practical application. In this paper, we propose and demonstrate a feasible method to improve the active absorption of bismuth active centers (BACs) by optimizing the drawing conditions, achieving a high gain with a short fiber length. The bismuth-doped phosphosilicate fiber (BPSF) preform was fabricated by the modified chemical vapor deposition (MCVD) process and drawn into fiber under nine different conditions. The results indicate that the active absorption of BACs increases as the drawing temperature increases and the drawing speed decreases within these drawing parameters. Meanwhile, the corresponding gain per unit length is improved. Furthermore, a maximum gain of 31.6 dB at 1350 nm with the >20 dB gain wavelength range of 1311-1401 nm was achieved in a double-pass double-pump configuration, using only 45 m BPSF. Meanwhile, the -3 dB bandwidth was 1328-1370 nm. The gain per unit length is 0.7 dB/m, which, to the best of our knowledge, is the highest gain per unit length reported for the BPSF.

Nanocrystalline Lanthanum Oxide Layers on Tubes Synthesized Using the Metalorganic Chemical Vapor Deposition Technique

Lanthanum oxide (La2O3) layers are widely used in electronics, optics, and optoelectronics due to their properties. Lanthanum oxide is also used as a dopant, modifying and improving the properties of other materials in the form of layers, as well as having a large volume. In this work, lanthanum oxide layers were obtained using MOCVD (Metalorganic Chemical Vapor Deposition) on the inner walls of tubular substrates at 600–750 °C. The basic reactant was La(tmhd)3 (tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)). The evaporation temperature of La(tmhd)3 amounted to 170–200 °C. Pure argon (99.9999%) and air were used as the carrier gases. The air was also intended to remove the carbon from the synthesized layers. Tubes of quartz glass were used as the substrates. La2O3 layers were found to be growing on their inner surfaces. The value of the extended Grx/Rex2 criterion, where Gr—Grashof’s number, Re—Reynolds’ number, x—the distance from the gas inflow point, was below 0.01. The microstructure of the deposited layers of lanthanum oxide was investigated using an electron scanning microscope (SEM). Their chemical composition was analyzed via energy-dispersive X-ray (EDS) analysis. Their phase composition was tested via X-ray diffraction. The transmittance of the layers of lanthanum oxide was determined with the use of UV-Vis spectroscopy. The obtained layers of lanthanum oxide were characterized by a nanocrystalline microstructure and stable cubic structure. They also exhibited good transparency in both ultraviolet (UV) and visible (Vis) light.

Comparison of ZnO Nanoparticles Prepared by Spray Pyrolysis and Consecutive Method for UV-Driven Photocatalytic Degradation of Methylene Blue

ZnO is a semiconductor material that is widely used for many applications in industries such as solar cells, dye-sensitized solar cells, food packaging, photocatalytic, anti-microbial, light-emitting diode devices, and gas sensors. In this study, ZnO nanoparticles (NPs) have been successfully synthesized using two methods, namely spray pyrolysis and a consecutive method. The consecutive method is a combination of sol-gel and spray drying methods. The objective of this study is to investigate the photocatalytic performance of ZnO fabricated using those methods. Both methods used the same precursor, zinc acetate dehydrate as a source of zinc, but with different solvents and additives. Based on the X-ray diffraction pattern, the ZnO NPs synthesized using spray pyrolysis and a consecutive method exhibited similar polycrystalline hexagonal wurtzite structures. The large crystal sizes of ZnO NPs were obtained using a consecutive method, sol-gel followed by spray drying, in comparison with those from the ZnO spray pyrolysis. In contrast, the particle size of ZnO prepared by the consecutive method was in a smaller range. The SEM analysis implied that the ZnO structures had surface defects. In the UV-driven photocatalytic degradation of methylene blue, ZnO produced by the consecutive method exhibited slightly higher degradation performance than ZnO spray pyrolysis. This performance was attributed to the larger crystal size of ZnO NPs, which provided a longer carrier movement at semiconductor surfaces and reduced electron-hole recombination. Additionally, ZnO NPs produced using the consecutive method underwent agglomeration that leads to a smaller contact surface with methylene blue, obstructing the degradation process.

Ultraviolet Laser Activation of Phosphorus‐Doped Polysilicon Layers for Crystalline Silicon Solar Cells

AbstractIn crystalline silicon photovoltaics (c‐Si PV), a pulsed laser can be used as a substitute for a high‐temperature furnace dopant diffusion/activation step. In contrast to furnace‐based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low‐pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly‐Si) passivated contact layer. The highest implied open‐circuit voltage iVoc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρc, which is attributed to a lower dopant concentration across the poly‐Si(n+)/SiOx/c‐Si interface. Regardless, the optimum iVoc, ρc combination is measured at a laser fluence of 0.78 J cm−2 producing values of 712 mV and 89 mΩ‐cm2, respectively. These values are still compatible with high‐efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

Hydrogen‐Driven Phase Differentiation in BN Nucleation on Diamond

AbstractBoron nitride has attracted scientific interest in recent years due to its potential use in electronics, both as hexagonal (hBN) and cubic (cBN) phases. While both are successfully realized through chemical vapor deposition, the heteroepitaxial growth of cBN on another iconic semiconductor, diamond is plagued with mixed‐phase formation. Employing first‐principles computations and a nanoreactor approach, the BN phase preferences are explored on diamond (001) controlled—as it is discovered—by the hydrogen gas concentration. In a limited‐hydrogen environment, the initial BN‐island expands along the diamond surface, forming a 3D metastable cubic phase that grows in the direction normal to the basal plane through kinetically‐limited nucleation, thus overcoming the thermodynamic preference toward the hBN phase. Comparatively, the amorphous phase is favored in the absence of hydrogen, while the hexagonal phase dominates at its high levels, elucidating numerous experimental observations. A obtained kinetic phase diagram connects the phase with hydrogen chemical potential to facilitate targeted phase selection. The results suggest that gas‐mediated nucleation kinetics provide feasible control for the precise synthesis. It also offers valuable guidance for the controllable synthesis of desired BN phases and advances research toward potential BN electronics.

Preparation, Purification, and Hydrophilization of Magnetic-Carbon Nanofibers

This study aims to synthesize, purify, and modify magnetic carbon nanofibers (Mag-CNF) into hydrophilic carbon material. The synthesis method was carried out by chemical vapor deposition (CVD) using the catalyst from Incolloy at 800°C with argon, nitrogen, hydrogen, and acetylene gases. The purification of Mag-CNF was then conducted by dissolving Mag-CNF with toluene and ethanol, followed by vacuum annealing. The hydrophilization of Mag-CNF was further performed by adding amine groups via reacting Mag-CNF with ethylene diamine, NaNO2, and H2SO4. The successfully prepared Mag-CNF has characteristics of tubular tube bundles consisting of carbon nanofibers with an average diameter of 100-120 nm. The X-ray diffraction (XRD) profile shows the characteristics of carbon, iron, iron oxide, and iron carbide. The Raman spectra show the existence of D, G, and G' bands corresponding to the characteristics of carbon nanomaterials. The magnetic property characterization using a vibration sample magnetometer (VSM) shows the synthesized product as ferrimagnetic materials. The modification results show the addition of hydrophilic groups to Mag-CNF, such as O–H and N–H groups, as analyzed in Fourier Transform Infrared (FTIR) spectra. The successful hydrophilization was also visually confirmed using a dispersion test in water, showing that Mag-CNF has better dispersion after surface modification.

Recent Advances in Hybrid Nanocomposites for Aerospace Applications

Hybrid nanocomposites have emerged as a groundbreaking class of materials in the aerospace industry, offering exceptional mechanical, thermal, and functional properties. These materials, composed of a combination of metallic matrices (based on aluminum, magnesium, or titanium) reinforced with a mixture of nanoscale particles, such as carbon nanotubes (CNTs), graphene, and ceramic nanoparticles (SiC, Al2O3), provide a unique balance of high strength, low weight, and enhanced durability. Recent advances in developing these nanocomposites have focused on optimizing the dispersion and integration of nanoparticles within the matrix to achieve superior material performance. Innovative fabrication techniques have ensured uniform distribution and strong bonding between the matrix and the reinforcements, including advanced powder metallurgy, stir casting, in situ chemical vapor deposition (CVD), and additive manufacturing. These methods have enabled the production of hybrid nanocomposites with improved mechanical properties, such as increased tensile strength, fracture toughness, wear resistance, and enhanced thermal stability and electrical conductivity. Despite these advancements, challenges remain in preventing nanoparticle agglomeration due to the high surface energy and van der Walls forces and ensuring consistent quality and repeatability in large-scale production. Addressing these issues is critical for fully leveraging the potential of hybrid nanocomposites in aerospace applications, where materials are subjected to extreme conditions and rigorous performance standards. Ongoing research is focused on developing novel processing techniques and understanding the underlying mechanisms that govern the behavior of these materials under various operational conditions. This review highlights the recent progress in the design, fabrication, and application of hybrid nanocomposites for aerospace applications. It underscores their potential to revolutionize the industry by providing materials that meet the demanding requirements for lightweight, high-strength, and multifunctional components.

Determination of Optical and Structural Parameters of Thin Films with Differently Rough Boundaries

The optical characterization of non-absorbing, homogeneous, isotropic polymer-like thin films with correlated, differently rough boundaries is essential in optimizing their performance in various applications. A central aim of this study is to derive the general formulae necessary for the characterization of such films. The applicability of this theory is illustrated through the characterization of a polymer-like thin film deposited by plasma-enhanced chemical vapor deposition onto a silicon substrate with a randomly rough surface, focusing on the analysis of its rough boundaries over a wide range of spatial frequencies. The method is based on processing experimental data obtained using variable-angle spectroscopic ellipsometry and spectroscopic reflectometry. The transition layer is considered at the lower boundary of the polymer-like thin film. The spectral dependencies of the optical constants of the polymer-like thin film and the transition layer are determined using the Campi–Coriasso dispersion model. The reflectance data are processed using a combination of Rayleigh–Rice theory and scalar diffraction theory in the near-infrared and visible spectral ranges, while scalar diffraction theory is used for the processing of reflectance data within the ultraviolet range. Rayleigh–Rice theory alone is sufficient for the processing of the ellipsometric data across the entire spectral range. We accurately determine the thicknesses of the polymer-like thin film and the transition layer, as well as the roughness parameters of both boundaries, with the root mean square (rms) values cross-validated using atomic force microscopy. Notably, the rms values derived from optical measurements and atomic force microscopy show excellent agreement. These findings confirm the reliability of the optical method for the detailed characterization of thin films with differently rough boundaries, supporting the applicability of the proposed method in high-precision film analysis.

Orthogonal Nano‐Engineering (ONE): Modulating Nanotopography and Surface Chemistry of Aluminum Oxide for Superior Antibiofouling and Enhanced Chemical Stability

AbstractDecoupling certain material surface properties can be key to attaining critical property‐activity relationships that underpin their antibiofouling performance. Here, orthogonal nano‐engineering (ONE) is employed to decouple the influences of nanotopography and surface chemistry on surface antibiofouling. Nanotopography and surface chemistry are systematically varied with a two‐step process. Controlled nanotopography is obtained by electrochemical anodization of aluminum, which generated anodic aluminum oxide (AAO) surfaces with cylindrical nanopores (diameters: 15, 25, and 100 nm). To modify surface chemistry while preserving nanotopography, an ultrathin (≈5 nm) yet stable zwitterionic coating of poly(divinylbenzene‐4‐vinylpyridyl sulfobetaine) is deposited on these surfaces using initiated chemical vapor deposition (iCVD). Antibiofouling performance is assessed by quantifying 48‐h biomass formed by gram positive and negative bacteria. The ONE surfaces demonstrated enhanced antibiofouling performance, with small‐pore nanotopography and zwitterionic chemistry each lowered biomass accumulation by tested species, with potential additive effects. The most effective chemistry‐topography combination (ZW‐AAO15) enabled an overall reduction of 91% for Escherichia coli, 76% for Staphylococcus epidermidis, 69% for Listeria monocytogenes, and 67% for Staphylococcus aureus, relative to the uncoated nanosmooth control. Additionally, the composite ZW coating exhibited encouraging anticorrosion properties under both static and turbulent cleaning conditions, vital to antibiofouling applications in healthcare and food industries.

Preparation and properties of Cu2MgSnS4 thin films and fabrication of heterojunction devices

Abstract Copper based chalcogenides have garnered growing importance in the area of thin film photovoltaics. Cu2MgSnS4 (CMTS) is one of the newest materials in this family of materials. It is a p-type material which find multiple applications in the field of photovoltaics. Cu2MgSnS4 thin films were deposited onto soda lime glass substrates using automated vacuum spray pyrolysis technique at a substrate temperature of 300 °C and annealed at different temperatures from 300 °C to 375 °C in steps of 25°C. The structural, elemental, morphological, optical, and electrical properties of the material were studied. X-Ray Diffraction studies showed that annealing eliminates impurity phases and improves crystallinity. Field Emission Scanning Electron Microscopy studies showed improved grain size and uniform deposition of the films. The energy bandgap of the as-prepared film is 2.02 eV and that of annealed films are around 2.5 eV. Hall measurements show that the material exhibit p-type conductivity with high value of conductivity, mobility and bulk concentration. Heterojunction devices were fabricated with chemical bath deposited CdS as a buffer layer and spray deposited Aluminium doped Zinc Oxide (Al:ZnO) as n-layer. Silver contacts were placed as electrodes over the top layer. The fabricated device architecture is <FTO/AZO/CdS/CMTS/Ag>. The junction parameters including rectification ratio, knee voltage, series resistance and Ideality factor of all the devices are calculated. The device annealed at 375 °C showed an ideality factor of 2.23, which is the best among all the fabricated devices.

Silver Antimony Sulfide thin films and its Selenization on Stainless Steel Substrates by Chemical Bath Deposition

Abstract In this study, 304 stainless steel (SS304) substrates were used for the first time for the deposition of cubic silver antimony sulfide selenide (AgSb(S,Se)2) films. The AgSbS2 films were deposited using chemical bath deposition (CBD) followed by a one-step selenization process. Amorphous AgSbS2 films were produced through two sequential chemical depositions carried out over 4 hours at 2 °C. The transformation from the amorphous state to cubic AgSb(S,Se)2 was achieved via selenization under ambient air conditions. Grazing incidence X-ray diffraction (GIXRD) confirmed the formation of cubic AgSbS1.7Se0.3 and AgSbS1.5Se0.5 solid solutions, with a calculated crystal size of approximately 9 nm. Raman spectroscopy revealed the amorphous nature of the as-deposited AgSbS2 films, with an asymmetric band observed at 331 cm-1, while polycrystalline AgSb(S,Se)2 films exhibited vibrational modes at 147, 190, 205, 253, 270, 324, and 493 cm-1. Scanning electron microscopy (SEM) analysis indicated a transformation of the granular morphology of AgSbS2 films into a smoother surface upon selenization. Energy dispersive spectroscopy (EDS) detected selenium incorporation up to 11.4 atomic percent (at%) in the AgSbS1.5Se0.5 film. The optical band gap (Eg) was modulated from 1.71 eV to 1.47 eV, depending on the selenium content introduced through selenization. The C/SS304/AgSb(S,Se)2/C structure fabricated on stainless steel substrates exhibited ohmic contact, suggesting its potential for application in flexible solar cells.

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

This work presents a simple chemical vapour deposition (CVD) method to grow ZnO nanostructures. By annealing Zn powder under atmospheric pressure conditions, we collected nanocrystals with various morphologies, including rods, pencils, sheets, combs, tetrapods, and multilegs. Raman scattering study reveals that the samples are monophasic with a hexagonal structure, and fall into the P63mc space group. Depending on the morphology and crystal quality, their photoluminescence spectra have only a strong UV emission associated with the exciton radiative recombination, or both UV and defect-related visible emissions with their relative intensity ratio varying with the excitation power density. The obtained results prove that ZnO exhibits many novel nanostructures that can foster the development of next-generation optoelectronic nanodevices and new applications in biological and biomedical fields.

Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication

In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (∼1019 cm−3) or low (∼1017 cm−3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (≤1 × 10−4 A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.